3369twf.d〇c/〇〇6 A7 B7 —« " 一 ·~τ- -- — _ . 五、發明説明（/ ) 本發明是有關於一種積體電路元件之製造方法，且特 別是有關於一種恢復對準標記（Alignment Mark)之對準 功能的方法。 微影（photolith〇graphy) ’是製造半導體元件成敗與 否的關鍵步驟’故而在半導體製程中，其佔著舉足輕重的 地位。以一般製作元件的製程爲例，通常一個產品依其複 雜性的不同，所需要的微影、曝光步驟，約在10至次 左右。爲使光罩的圖案能正確地轉移到晶片上，通常，半 導體製作的過程中，在每一次執行光阻的曝光之前，必須 做好各層之間的對準’以避免不當的圖案轉移’而導致整 個晶片報廢的情況發生。 傳統的曝光製程中，係在欲形成半導體元件之晶圓上 形成與光罩相對應的對準標記。此對準標記，即爲所泛稱 之零點標記（Zero Mark)，其階梯高度（Step Height)在 進行對準時，可以形成一散射場（Scattering Site)或繞射 邊緣（Diffraction Edge)。當所提供的光源，照射於整個 晶圓時，投射在對準標記上的光所產生的繞射圖形 (Diffraction Pattern )，可以反射至對準感應器（Alignment Sensor)，或第一階繞射干涉儀對準系統（？丨故〇比61-Diffraction Interferometer Alignment System) ’而達到對準 的目的。 然而，隨著沈積次數的增加’晶圓上所形成之膜層將 使對準標記逐漸失去所具有的階梯高度以至於所產生之繞 射現象不夠明顯，使得對準信號（Alignment Signal)太微 誚先閱讀背而之注意事項再填寫本頁) -裝·3369twf.d〇c / 〇〇6 A7 B7 — «" 1 · ~ τ- --- _. V. Description of the Invention (/) The present invention relates to a method for manufacturing integrated circuit components, and in particular A method for restoring the alignment function of an alignment mark. Photolithography is a key step in the success or failure of manufacturing semiconductor components. Therefore, it plays an important role in semiconductor manufacturing. Taking the manufacturing process of general components as an example, usually the lithography and exposure steps required for a product are about 10 to about 10 times depending on its complexity. In order for the mask pattern to be correctly transferred to the wafer, usually, during the semiconductor manufacturing process, before each exposure of the photoresist is performed, the layers must be aligned 'to avoid improper pattern transfer' and This has caused the entire wafer to be scrapped. In the conventional exposure process, an alignment mark corresponding to a photomask is formed on a wafer on which a semiconductor element is to be formed. This alignment mark is a so-called Zero Mark. When the step height is aligned, it can form a scattering site or a diffractive edge. When the provided light source irradiates the entire wafer, the diffraction pattern (Diffraction Pattern) generated by the light projected on the alignment mark can be reflected to the alignment sensor or the first-order diffraction Interferometer alignment system (? 丨 61-Diffraction Interferometer Alignment System) 'to achieve the purpose of alignment. However, as the number of depositions increases, the film layer formed on the wafer will gradually lose the step height of the alignment mark, so that the resulting diffraction phenomenon is not obvious enough, making the alignment signal too small. (阅读 Read the precautions before filling in this page)
、1T 經滴部中央標準局員工消费合作社印裝 3 369twf.doc/006 A7 3 369twf.doc/006 A7 經濟部中央標率局員工消費合作社印製 B7____________-- 五、發明説明（i) 弱，或雜訊比率（Noise Ratio)太大’而無法由對準感應 器偵測到任適當的對準信號，而導致對準錯誤 (Misalignment)的發生。 在第1A圖中所繪的剖面圖，是在已形成有金氧半導 體104的晶圓100上沈積一層介電層1〇6與一層金屬層1〇8 之後，位於對準標記102上方的金屬層1〇8已然失去了晶 圓100上對準標記102所具有的階梯高度11〇，且由於金 屬層108在所提供的對準光源下爲不透光膜層（〇Paque Film)，因此無法使對準的光源，由對準標記1〇2反射至 對準感應器，或第一階繞射干涉儀對準系統，故而常導致 對準的錯誤，甚至發生根本無法對準的現象。 請參照第圖，爲了恢復對準標記102準確對準的 目的，以避免對準錯誤的發生，其典型的作法，係利用微 影與蝕刻的技術，在對應於對準標記圖案104上方的金屬 層108中，形成開口 124,使對準光源可以通過此開口 124， 避免金屬層108之遮蔽，而使對準標記102得以在後續製 程中發揮準確對準之功能。 然而，以習知的方法，不但需在金屬層108上形成光 阻層140，還必須另外再製作光罩150，方能以微影之曝 光與顯影技術使光阻層140圖案化。其後，才可利用此圖 案化的光阻層140爲罩幕，以蝕刻去除位於對準標記1〇2 上方之金屬層108，形成開口 124。最後，將光阻層140剝 除’並透過淸理的步驟’方可將反應所剩下之殘餘物以及 未反應的化學蝕刻劑加以去除，而達到局部去除金屬層1〇8 4 本紙張尺度適用中國國家標準（CNS ) /\4坭掐（210X297公於） (請先閱讀背面之注意事項科填寫本頁) ----—裝.1T printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 3 369twf.doc / 006 A7 3 369twf.doc / 006 A7 printed by the Consumers Cooperatives of the Central Standards Bureau of the Ministry of Economics B7 ____________-5. Description of the invention (i) Weak, Or the Noise Ratio is too large 'to detect any proper alignment signal by the alignment sensor, resulting in the occurrence of misalignment. The cross-sectional view shown in FIG. 1A is a metal located above the alignment mark 102 after depositing a dielectric layer 106 and a metal layer 108 on the wafer 100 on which the metal-oxide semiconductor 104 has been formed. The layer 108 has lost the step height 11 of the alignment mark 102 on the wafer 100, and because the metal layer 108 is an opaque film under the provided alignment light source, it cannot be used. The aligned light source is reflected from the alignment mark 102 to the alignment sensor, or the first-order diffraction interferometer alignment system, which often results in alignment errors, or even the phenomenon of no alignment at all. Please refer to the figure. In order to restore the accurate alignment of the alignment mark 102 to avoid the occurrence of misalignment, the typical method is to use the technique of lithography and etching on the metal corresponding to the alignment mark pattern 104. An opening 124 is formed in the layer 108 so that the alignment light source can pass through the opening 124 to avoid the shielding of the metal layer 108 and enable the alignment mark 102 to perform the function of accurate alignment in subsequent processes. However, in the conventional method, not only the photoresist layer 140 needs to be formed on the metal layer 108, but also a photomask 150 must be formed separately, so that the photoresist layer 140 can be patterned by lithographic exposure and development techniques. After that, the patterned photoresist layer 140 can be used as a mask to etch and remove the metal layer 108 above the alignment mark 102 to form an opening 124. Finally, the photoresist layer 140 can be stripped 'and passed through the step of processing' to remove the remaining residue of the reaction and the unreacted chemical etchant, so as to partially remove the metal layer. Applicable to Chinese National Standard (CNS) / \ 4 坭 掐 (210X297 public) (Please read the Caution Section on the back first and fill in this page) ------ Package.
、1T, 1T
I 3369rwf.doc/006 A7 B7 ——— - - _____________ 五、發明説明（彡） 之目的。然而’以此方法不但增加製程流程與時間，減少 製程之產能（Throughput) ’還必須再額外製作光罩，提 闻製造之成本，才能使對準標記102得以在後續製程中發 揮準確對準之功能。 有鑑於此，本發明之目的就是在提供一種恢復對準標 記之對準功能的方法，可以不需形成光阻層，亦不需額外 製作光罩’即不需以微影的方式，即可去除對準標記上方 之不透光層’使對準標記發揮準確對準之功能。 根據本發明的目的提出一種恢復對準標記之對準功能 的方法’此方法係在位於晶圓之對準標記的上方，提供一 聚斂離子束源作爲電漿供應器，以使其所供應之電漿可以 準確且局部地轟擊反應室中位於晶圓其準標記上方處之反 應氣體源，同時使轟撃之後所產生之粒子與對準標記上方 之膜層產生反應性離子蝕刻反應，達到局部蝕刻去除對準 標記上方之膜層，使對準標記上方的膜層形成開口 ’使對 準標記不再受膜層的遮蔽，而達到恢復對準標記其對準功 能的目的。 爲讓本發明之上述和其他目的、特徵、和優點能吏明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1A圖係繪示習知一種失去對準功能之元件的剖面 圖； 第1B圖係繪示習知一種恢復第1A圖之元件其對準功 5 本紙張尺度適用中國國家標準（CNS ) 枯（.’…. (誚先閲讀背而之注意事項再填寫本页) -裝. 訂 -.fev 經濟部中央標準局员工消费合作社印製 經濟部中央標準局貝工消費合作社印製 3369twf.doc/006 A? B7 五、發明説明（年） 能之方法的剖面圖；以及 第2A圖至第2B圖係繪示本發明之一種恢復對準標記 之對準功能的方法示意圖。 圖式之標記說明： 100，200 :晶圓 102，202 :對準標記 104 :金氧半電晶體 106 :介電層 108 :金屬層 110:階梯高度 124，224 :開口 140 :光阻層 150 :光罩 208 :膜層 220 :晶座 222 :蝕刻氣體源 ’ 226:局部電漿產生器 228 :電漿 260 :反應室 貫施例 第2A圖至第2B圖，係繪示依照本發明實施例一種恢 復對準標記之對準功能之方法的示意圖。首先，請參照第 2A圖，將欲恢復對準標記202之對準功能的晶圓200放置 於反應室260的晶座220之上。其中，反應室260可以提 6 本紙張尺度適用中國國家標準（CNS )八4蚬格（210Χ297，；Μί ) ^--；---------—扣衣-- (諸先閲讀背而之注意事項"填寫本頁 、1Τ 經滴部中央標準局貝工消費合作社印製 3369twf.d〇c/〇〇6 A? B 7 ________________ -----—________________ 五、發明説明（^ ) 供蝕刻製程所需之蝕刻氣體源222 ;而晶圓200則具有層 與層之間對準之用的對準標記202。並且，在此晶圓200 上已覆蓋有一層膜層208，使得晶圓2〇〇之對準標記202 在微影的過程中無法準確對準或使得對準失效。此膜層208 例如是一層在對準過程中，於所提供的光源之下爲不透光 的金屬層或是複晶砂層。 然後，在晶座220的上方，位於對準標記2〇2的正上 方處，提供一局部電漿產生器226。此局部電漿產生器226， 例如爲聚斂離子束源（Focused Ion Source)，係用以將電 漿228準確且局部提供於對準標記202正上方的膜層208 之上。較佳的，可以在局部電漿產生器226與晶座220上 另外再施加可以產生射頻之電壓，以使電漿228可以加速 轟擊介於局部電漿產生器226與膜層208之間的反應性氣 體222,並確保所轟擊之反應性氣體222係位於對準標記 202上方者。 接著’請參照第2B圖，藉由局部電漿產生器226其 所提供之電漿232之中的高能量電子，轟撃介於局部電漿 產生器226與膜層208之間的反應性氣體222之後，其所 產生的各種粒子，包括離子、自由基（Radlcals)與原子， 與對準標記202上方之膜層208產生反應性離子飩刻 (Reactive Ion Etching)反應，以局部蝕刻去除對準標記2〇2 上方之fl吴層208 ’使對準標sfi 202上方的膜層208形成開 口 224，而使膜層208不再遮蔽對準標記2〇2，達到恢復對 準標記202其對準功能的目的。當局部電漿產生器226與 7 ^^尺>^適用中國國家標( CNS丁/\4«!^ ( 210X 297^]^ —-------------- (誚先閱讀背面之注意事項再填寫本頁) 裝· 、1Τ 3369twf.doc/006 A7 3369twf.doc/006 A7 經满部中失摞终局只工消费合作社印裝 一 B7 " *'"" ------ ~· -------- I __!__ _ f f .... ._ ----- 7、發明説明（6 ) 晶座220上另外再施加可以產生射頻之電壓時，不但可以 使電漿228加速轟擊介於局部電漿產生器226與膜層208 之間的反應性氣體222，並可確保所產生之粒子，沿著晶 圓200的方向，加速與對準標記202上方之膜層208產生 局部的反應性離子蝕刻反應，達到精確去除對準標記202 上方之膜層208，恢復對準標記202其對準功能的目的。 根據以上所述，本發明具有下列特徵： 1 ·可以不需藉由額外的微影製程，即可局部去除晶 片上之膜層’使晶片之對準標記恢復準確對準之功能，不 但簡化製程，亦可節省製程的時間。 2·不需額外製作光罩，因此可以減少製程的成本， 提昇製程的產能。 3.由於本發明並不需要另外形成一層光阻層，而且 不需使用大量的化學蝕刻劑，因此，不但較爲經濟、亦可 以減少對環境的污染。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內’當可作各種之更動與濁飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 8 用中國國家標準（0阳）AAilif (210X291^ 1 (誚先閲讀背而之注意事項存填寫本頁 -裝. 訂I 3369rwf.doc / 006 A7 B7 ———--_____________ 5. The purpose of the invention description (彡). However, 'this method not only increases the process flow and time and reduces the throughput of the process (Throughput)', but also requires an additional photomask to raise the cost of manufacturing, so that the alignment mark 102 can be accurately aligned in subsequent processes. Features. In view of this, the object of the present invention is to provide a method for restoring the alignment function of the alignment mark, which can eliminate the need to form a photoresist layer and make an additional photomask. Remove the opaque layer 'above the alignment mark so that the alignment mark can perform accurate alignment. According to the purpose of the present invention, a method for restoring the alignment function of an alignment mark is proposed. This method is to provide a focused ion beam source as a plasma supplier above the alignment mark of a wafer so that Plasma can accurately and locally bombard the reactive gas source in the reaction chamber above the quasi-mark of the wafer, and at the same time, the particles generated after the bombardment and the film layer above the alignment mark have a reactive ion etching reaction to achieve local The film layer above the alignment mark is removed by etching, so that the film layer above the alignment mark forms an opening, so that the alignment mark is no longer shielded by the film layer, and the purpose of recovering the alignment function of the alignment mark is achieved. In order to make the above and other objects, features, and advantages of the present invention comprehensible, a preferred embodiment is described below in detail with the accompanying drawings as follows: Brief description of the drawings: FIG. 1A Figure 1B shows a conventional cross-section of a component that has lost the alignment function; Figure 1B shows a conventional method to restore the alignment function of the component in Figure 1A. 5 This paper size applies Chinese National Standard (CNS). …. (诮 Read the precautions before filling out this page)-Binding. Order -.fev Printed by the Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the Central Standards Bureau of the Ministry of Economics and printed by the Bayer Consumer Cooperatives 3369twf.doc / 006 A B7 V. Sectional view of the invention description (year) method; and Figures 2A to 2B are schematic diagrams showing a method for restoring the alignment function of the alignment mark of the present invention. Marking description of the drawing: 100 , 200: wafer 102, 202: alignment mark 104: metal oxide semiconductor 106: dielectric layer 108: metal layer 110: step height 124, 224: opening 140: photoresist layer 150: photomask 208: film layer 220: Crystal Block 222: Etching Gas Source '226: Local Plasma The generator 228: the plasma 260: the reaction chamber FIG. 2A to FIG. 2B are schematic diagrams showing a method for restoring the alignment function of the alignment mark according to the embodiment of the present invention. First, please refer to FIG. 2A The wafer 200 to be restored to the alignment function of the alignment mark 202 is placed on the wafer holder 220 of the reaction chamber 260. Among them, the reaction chamber 260 can be adjusted to 6 paper sizes, which is applicable to the Chinese National Standard (CNS) 8.4 grid. (210 × 297 ,; Μί) ^-; ----------- buckle clothes-- (please read the precautions behind the back " fill in this page, 1T by the Central Bureau of Standards, Shellfish Consumer Cooperatives Printed 3369twf.d〇c / 〇〇6 A? B 7 ________________ -------________________ V. Description of the Invention (^) The etching gas source 222 required for the etching process; and the wafer 200 has layers and layers An alignment mark 202 for alignment between the two. Moreover, a film layer 208 has been covered on the wafer 200, so that the alignment mark 202 of the wafer 200 cannot be accurately aligned during the lithography process or Makes the alignment invalid. This film layer 208 is, for example, a layer that is opaque under the provided light source during the alignment process A metal layer or a polycrystalline sand layer. Then, a local plasma generator 226 is provided above the crystal base 220, directly above the alignment mark 202. This local plasma generator 226 is, for example, an agglomerate An ion beam source (Focused Ion Source) is used to accurately and partially provide the plasma 228 on the film layer 208 directly above the alignment mark 202. Preferably, the local plasma generator 226 and the crystal base 220 can be additionally applied with a voltage that can generate radio frequency, so that the plasma 228 can accelerate the reaction between the local plasma generator 226 and the film layer 208. 222, and ensure that the reactive gas 222 that is bombarded is above the alignment mark 202. Next, please refer to FIG. 2B. With the high-energy electrons in the plasma 232 provided by the local plasma generator 226, a reactive gas interposed between the local plasma generator 226 and the film layer 208 is bombarded. After 222, various particles, including ions, radicals, and atoms, react with the film layer 208 above the alignment mark 202 to generate a reactive ion engraving (Reactive Ion Etching) reaction to remove the alignment by local etching. The fl layer 208 above the mark 202 is to make the film layer 208 above the alignment mark sfi 202 form an opening 224, so that the film layer 208 no longer covers the alignment mark 202, and the alignment of the alignment mark 202 is restored. The purpose of the function. When the local plasma generator 226 and 7 ^^ feet > ^ apply to the Chinese national standard (CNS Ding / \ 4 «! ^ (210X 297 ^) ^ ---------------- ( (Please read the precautions on the back before filling in this page.) Installation, 1T 3369twf.doc / 006 A7 3369twf.doc / 006 A7 After the full department is lost, only the consumer cooperative prints a B7 " * '" " ------ ~ · -------- I __! __ _ ff .... ._ ----- 7. Description of the invention (6) Additional application on the crystal base 220 can produce When the voltage of the radio frequency is applied, not only can the plasma 228 accelerate the bombardment of the reactive gas 222 between the local plasma generator 226 and the film layer 208, but also ensure that the generated particles accelerate in the direction of the wafer 200 A local reactive ion etching reaction is generated with the film layer 208 above the alignment mark 202, so as to accurately remove the film layer 208 above the alignment mark 202 and restore the alignment function of the alignment mark 202. According to the above description, this The invention has the following features: 1 · The film layer on the wafer can be partially removed without the need for an additional lithography process, so that the alignment marks of the wafer can be restored to the accurate alignment function, which not only simplifies the process It can also save the time of the manufacturing process. 2. No additional photomask is needed, so the cost of the manufacturing process can be reduced, and the production capacity of the manufacturing process can be improved. Chemical etchant, therefore, is not only more economical, but also can reduce environmental pollution. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art will not depart from it. Within the spirit and scope of the present invention, various modifications and opacity can be made, so the protection scope of the present invention shall be determined by the scope of the attached patent application. 8 Chinese national standard (0yang) AAilif (210X291) ^ 1 (诮 Please read the back of the note before filling in this page-Pack. Order