TW464959B - Method and device for ion implantation - Google Patents

Method and device for ion implantation Download PDF

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Publication number
TW464959B
TW464959B TW89122602A TW89122602A TW464959B TW 464959 B TW464959 B TW 464959B TW 89122602 A TW89122602 A TW 89122602A TW 89122602 A TW89122602 A TW 89122602A TW 464959 B TW464959 B TW 464959B
Authority
TW
Taiwan
Prior art keywords
gas
ion beam
semiconductor wafer
ion
ion implantation
Prior art date
Application number
TW89122602A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiko Matsunaga
Kazuyoshi Goto
Taiho Takahashi
Hiroshi Asechi
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW464959B publication Critical patent/TW464959B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW89122602A 1999-10-29 2000-10-26 Method and device for ion implantation TW464959B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30967699A JP4290292B2 (ja) 1999-10-29 1999-10-29 イオン注入装置及びイオン注入方法

Publications (1)

Publication Number Publication Date
TW464959B true TW464959B (en) 2001-11-21

Family

ID=17995942

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89122602A TW464959B (en) 1999-10-29 2000-10-26 Method and device for ion implantation

Country Status (3)

Country Link
JP (1) JP4290292B2 (fr)
TW (1) TW464959B (fr)
WO (1) WO2001033604A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760665B2 (ja) * 1982-10-08 1995-06-28 株式会社日立製作所 表面改質装置
JPS62274543A (ja) * 1986-05-22 1987-11-28 Ulvac Corp イオン注入装置
JPH0555159A (ja) * 1991-08-27 1993-03-05 Nec Corp イオン注入装置
JP3365066B2 (ja) * 1994-04-27 2003-01-08 日新電機株式会社 イオン注入方法およびその装置
JP3391109B2 (ja) * 1994-09-01 2003-03-31 日新電機株式会社 イオンドーピング装置
JP2947249B2 (ja) * 1998-01-14 1999-09-13 日本電気株式会社 イオン注入装置のウエハ搭載部材

Also Published As

Publication number Publication date
JP2001143653A (ja) 2001-05-25
WO2001033604A1 (fr) 2001-05-10
JP4290292B2 (ja) 2009-07-01

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees