TW463278B - Wire bonding method - Google Patents

Wire bonding method Download PDF

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Publication number
TW463278B
TW463278B TW086116326A TW86116326A TW463278B TW 463278 B TW463278 B TW 463278B TW 086116326 A TW086116326 A TW 086116326A TW 86116326 A TW86116326 A TW 86116326A TW 463278 B TW463278 B TW 463278B
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Taiwan
Prior art keywords
capillary
joint
line
point
wire
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TW086116326A
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English (en)
Inventor
Shinichi Nishiura
Tooru Mochida
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Shinkawa Kk
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

4 6327 8 經濟部中央標準局負工消費合作社印製 A7 __ B7五、發明説明（/ ) 〔發明之詳细說明〕 〔本發明所匾之技術領域] 本發明係有Η在半導髓裝置之製造工程中，以線將第 1接合點與第2接合點之間連接之媒接合方法，特別是有 閫線環形成方法。 〔習知技術] 在半導熥裝置之製造中，如圔4所示*具有以線3將 被裝載於引媒框架1之半専艚2之裝填物2a (第1接合 點1與引線框架1之引媒la (第2接合點）埋接之工程 。此場合之線3之環形狀具有如圈4 (a)所示之台形環 及圓4 (b)所示之三角環。又•此種媒環形方法已揭示 於例如特公平5 — 60657號專利公報、特開平4-3 1 8 9 4 3號専利公報。 圖4 (a)所示之台形瑁係由圄5所示之工程所形成 。如圈5 (a)所示。挟持媒3之夾具（未醒示）為開狀 態*在毛细管4下降，於媒先皤所形成之球與第1接合點 A接合之後，毛细管4上升至B點為止而將線3送出。其 次，如圈5 (b)所示，毛细管4係以與第2接合點G相 反方向水平移動至C點為止。一般而言，毛细管4與第2 接合點G相反方向移動之環形成動作即所謂的逆轉動作。 依此動作，線3係自A黏至C點為止之間連结而形成傾斜 形狀 > 在線3的部份產生摺子3a。由A點至C點為止之 工程 所送出之線3如圖4 (B)所示，彤成頸高度部3 1 ^^1- - - - -I— ' n^i <1^1 — -I - ^<J -15 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 463278 A7 B7 — —" .…. - 「 — 五、發明説明（1) 〇 其次，如圔5 (C)所示·毛细管4上升至D點為止 並將線3送出。其後，如圏5 (d)所示，毛细管4再度 以與第2接合黏G相反方向水平移動至E點為止*即進行 逆轉動作。依此動作而被送出之線3形成自C點至E點為 止之間埋接的傾斜形狀•且自毛细管4之下端部形成線3 之摺子3b。自C點至E點為止被送出之媒3則形成如圈 4 (a)之台形長度都32。 其次，如_5 (e)所示，毛细管4上升至F點為止 ，僅圖4 (a>所示之傾斜部33部份送出媒3。其後· 夾具（未圖示）朗閉。當夾具明閉時，其後即使毛细管4 移動，亦不進行線3之送出動作。其次，如匾5 (f)、 (s)所示，毛细管4為圓弧運動及在圓弧運励之後下降 並定位在第2接合點G，並接合線3。 圃4 (b)所示之三角瑱係以圖6所示之工程所形成 。由於三角環並不形成台形瑁之台形長度部3 2 ·因而不 進行圈5 (d)所示之第2次之逆轉動作。因此，圖5 ( 經濟部中央標準局員工消費合作社印装 n — -- ^^^1 n m I-i—^aJ - - (請先M讀背面之注意事項再填寫本頁) c ) 、 i d ) 、 （e)之工程僅形成画6(C)之工程。 邸圖6 (a) 、 （b)係與匾5 (a) 、 （b)同樣之工 程*在圈6 (b)所示之第1次逆轉動作之後，如園6 ( c)所示，毛细管4係上升至F點為止而將線3送出。其 後，毛细管4進行與匾5 (e) 、 （f)同樣之圖6 ( d )、（e)之動作，將媒3接合於第2接合點G。 -4 — 本紙張尺度適用中國國家標準（CNS )八4規_格（210XM7公釐） 4 6 327 8 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（3 ) 〔本發明所欲解決之課題 如前述，圖6所示之 形成比圖5所示之台形環 形成之時間更短。但，在 段差較大之場合，或第1 明顯地分離之場合，在圖 狀中，造成線3與半導體 合，使其形成團4 ( a ') 線3與半導體晶片2之接 在圖5所示之台形環 作·毛细管4與線3附著 自第1接合點A至摺子3 差異赶其高度越高*則 。圖5 ( b )所示之第1 在接近第1接合點A之高 易附著。 但，圖5 ( d )所示 4係在離開第1接合點A 易附著且不安定。因此， 部份並不固定且形吠保挎 比摺子3 a萵，形成所謂 狀保持力弱容易發生因外 笮2接合？ϋ接合時之毛细 一 f j ,j -W -. 三角環形成工程*其持徵具有可 形成工程更為蚩純之工程，且環 第1接合點A與第2接合點G之 接合點A與半導體晶Η 2之端部 4 (b)所示之三角環之線環形 晶Η 2之端部互拒接觸。於此場 所示之台形環之線環形狀Κ防止 觸。 形成之工程中，依前述之逆轉動 於摺子3 b之附著難易程度Γ糸因 b為止之線長度（高度）而有所 摺子3 b則有越不易附著之傾向 次之逆轉動作，由於毛细管4係 度位置進行，故比較強的3 a較 之第2次逆轉動作，由於毛細管 較高之位置進行，摺子3 b較不 由於圈4 ( a )所示之摺子3 b 力弱，故將摺子3 b部份作成之 的翹尾巴，若摺子3 b部份之形 在壓力而使線彎曲洌5Q，在對 管接镯及因超音波振ilZ衝擊. ---------I--- --------訂 *-------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中阄國家標準（CNS)A】規格do X 297公f ) 463278 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（f ) 線3之振動及在鑲模時· 動等|因而容易使線彆曲 因此，習知係將圖5 量增大以增強摺子3 b之 使得毛細管4移動量增大 之線的彎曲，造成頸部損 本發明為解決台形環 的線環形狀及形狀保持力 〔解決課題手段〕 本發明為解決上述課 點與第2接合點之間連接 與第2接合點相反方向移 法，其特徵係具有在前述 降至線上附著有堅固之摺 上升之工程。 本發明為解決上述課 點與第2接合點之間連接 )將第1接合點與線連連 管上升，接著進行與第2 轉動作之工程；！c)其 使毛細管與第2接合點相 工程；（d i其次，僅將 固之摺子為止之工程；及 _B7_ 鲁tL |ί齡零％ 因鑲模材料之注入而導致m的流 0 (d )所示之逆轉動作時之逆轉 肜狀保持力。但，由於Μ此方法 ，導致接合時間因而增加反頸部 害之另一問題。 之問題點，因此提供可形成安定 高的線環形狀之線接合方法。 題之第1手段係Κ線將第1接合 *並且S前述線環形成時|進行 動之逆轉動作之工程的線接含方 逆轉動作之後•將毛细管稍微下 子為止之工程，其後，將毛细管 題之第2手段係Μ線將第1接合 之線接合方法，其特徵具有（a 接之工程；（b 1其次，使毛细 接合點相反方向移動之第i次逆 次，使毛細管上卉，其後，進行 反方向移動之第2次逆轉動作之 毛细管稍微下降至線上附著有堅 i e ' a次，進疔使毛细管上g ^1- ^---I m I m n I - —ί - n 1 一OJ1 n .^1 ^p. I I (請先閱讀背面之沒意事項再填寫本頁) 本紙張尺度適用中® Θ家標皁（CNSM.1規格（210 X 297公笔） 463278 A7 經濟部智慧財產局員工消費合作社印製 B7_五、發明說明（”YWTKT ，並將線送出I將朝著第2接合點之方向移動之線與第2 接合點連接之工程。 〔本發明之實施型態] 本發明之一實拖型態Μ圖1〜圈3說明之。又，圖4 (a )與圖5相同，並且栢當部材及相當部份附上同一符 號說明之。圖1係表示依在毛细管之軌跡之各時點的線形 狀，圖2係表示線連接狀態。圖3像表示毛细管之軌跡。 本實施例型態由於在圖5所示之台形環之圖5 (d丨與( e >之間的工程附加上画1 ( e )之工程，其他的工程則 與閫5之工程相同。即，圖1 ( a )〜（d )之工程相當 於圖5 ( a丨〜（d)之工程，而圖1 ( f )〜（h )之 工程則相當於圖5 ( e )〜（s )之工程。 苜先，說明有關與習知同樣之圖1 (a)〜（d_、之 工程。如圖i (a)所示，挾持線3之夾具（未圖示）為 開吠態，將毛细管4下降•在將1第接合點A與在線先端 所肜成t球接合後|毛细管4上升至B點為止，並將線3 送出。其次，如圖1 ( b )所示，毛细管4係進行與第2 接合點G相反方向作水平移動至C點為止之逆轉動作·依 此，與習知同樣地•在線3之部份產生擋子3 a 、又，自 A點至C點為止之工程所送出之線3則形成如圖2所示之 環的頸高度部3 1 : 其次，如_ 1 ( C )所示，毛细管4除上升至D點為 !]：而將绚3送出：其次，如圖1 ( d i ΐ > ΐ细管4 (i； (請先閱讀背面之注意事項再填寫本頁) 丨訂： -線' 本紙張K度適用中國國家標隼（CNS)Al規格（210 X 297公笼） 經濟部智慧財產局員工消費合作社印製 丨 6 32 7 8五、發明說明（ 與第2接 作水平移 在線3產 之台形長 其次 )所示， 4之下降 安定及高 其後 上升至F 龆閉。當 3之送出 管4係朝 動及圓弧 3接合。 與本發明 習知例所 又， 3之D 4 在第1次 管4僅稍 轉動作後 3 !之頂 A7 B7 修正 合點G相反 動至E點為 生摺子3 b 度部3 2。 進行本案 毛细管4僅 ，茌摺子3 形狀保持力 與習知同樣 點為止而將 夾具關閉時 動作。其次 著第2接合 運勤之後下 又•自E點 之要旨無直 揭示之相同 在上述寶拖 E後），毛 之逆轉動作 徹下降之動 之場合較少 點的摺子3 方向移動，即進行動2次之逆轉動作 止。依此自C點至E點為止之動作， 。又，此時所送出之線3則形成圖2 實施型 稍微下 b固定 之線環 地，如 線3送 其後 ，如圖 點的方 降，並 至第2 接關係 動作及 型態中 细管4 後（圖 作3此 ，但是 2 s'j m 態之特 降至E 的同時 形狀。 圖1 ( 出。其 即使毛 1 ( g 向作水 定位於 接合點 ，理所 其他多 ，在第 雖僅作 3之B 場合， 其比習 強、本 徵的工程。如圖 1點為止。依該 ，形成摺子3 b f )所 後，夾 细管4 .)、( 平移動 第2接 G為止 當然， 種動作 2次之 稍微下 Θ C後 其效果 知例之 發明之 示，毛细 具（未圖 移動亦不 h )所示 ，接著在 合點G， 之動作， 亦可進行 逆轉動作 降之動作 )，進行 雖比第2 場合，頸 要g為昍 1 ( e 毛细管 Z位置 管4 \k 示）則 進行線 ，毛细 圓弧運 而將線 由於其 前述之 後（圖 ，亦可 使毛細 次之逆 高度部 (請先吼讀背面之注意事項再填寫本頁) 本紙張&度適用中國國家標苹（CN'S)A.l現格（210 X 297公f ) 4 6327 8 a? B7 五、發明說明（7) :修正 麟年以7日 經濟部智慧財產局員工消費合作社印製 行1次或數次之逆轉動作之場合’至少在1次的逆轉動作 後，可使毛细管4僅稍微下降。 ί發明效果〕 依本發明，由於在逆轉動作之後僅將毛细管稍微下降 *其後將毛细管上升並將線送出’因此可產生較強之摺子 特別是在第2次之逆轉動作後*僅將毛细管稍微下降之 場合，台形環之台形長度部與傾斜部之臨界的摺子係形成 固定且確實之物。依此，對配線距離短的短環當然沒問題 ，對配線距離較長的長環而言，亦可獲得無翹尾巴且安定 之環形狀。 又，由於可對由外部之加壓形成形狀保捋力較高之環 ，故可防止由外部的加壓而造成之線彎曲，例如’在對第 2接合點G接合時*對毛细菅接觸及因超音汲振還而 '導致 之衝擊、線3之振動及在鑄模時，因注入鑲模衬料所造成 之模流勤等之外力，具有較高之衡擊吸收能力’故可防止 線彎曲。又•由於毛细管2移動距離短，故可縮短接含時 間，其對頸部之線的彆曲變少，因而可使頚部之損害降至 最低程度。 〔画面之簡要說明〕 圈1係表不依在本發明之毛细管的軌跡Ζ各時點的邊 形状之一簧陁型態： 圖2傜表示線連接狀態： 圖3¾表示毛细管的軌跡之說明圖： 本紙張尺度適用中國國家標準（CNSM.丨峴格（210 x 297公g ) ^^1 ^^1 ^^1 n J1 Me I # ^^1 ^^1 IT ^Jt 1 ΰι I ^^1 n n 1 I (請先閱讀背面之注意事項再填寫本頁) 4 5 32 7 8 A7 B7 修正'iiJb 爾年日 圖4 (a)係表示台形環之線環形狀、（b)係表示 三角環之線環形狀。 圖5係表示在依形成台形環之毛细管的軌跡之各時點 的線形狀的狀態圖。 圃6係表示在依形成三角環之毛细管的軌跡之各時點 的線形狀的狀態圖。 〔符號說明〕 A G 3 3 a、3 b 4 3 1 3 2 3 3 第1接合點 第2接合點 線 摺子 毛细管 頸高度部 台形長度部 傾斜部 (請先閱讀背面之沒意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印說 -10- 本纸張又度適用中0 0家標準（CNS)A4規格（210 X 297公t )

Claims (1)

  1. 4 632 7 8 六、申請專利範国 A8 B8 C8 D8 種 線 接 合 方 法 > 具 有 Μ 連 接 9 並 且 在 前 述 線 環 向 移 動 之 逆 轉 動 作 X 程 逆 轉 m 作 ίν·» m » 僅 使 毛 细 子 為 止 之 工 程 其 後 j 種 線 接 合 方 法 9 具 有 Μ 連 接 之 線 接 合 方 法 t 其 將 第 1 接 合 點 與 線 連 接 其 次 使 毛 细 管 上 升 » 動 之 第 1 次 逆 轉 動 作 之 其 次 1 使 毛 细 管 上 升 * 相 反 方 向 移 動 Z 第 2 次 其 次 嘗 僅 將 毛 细 管 稍 微 Z X 程 * 及 其 次 9 進 行 使 毛 细 管 上 點 方 移 動 之 線 與 第 2 接合點之間 合點相反方 係具有前述 有堅固之摺 2 ·-接合點之間 (a ) (b ) 相反方向移 (C ) 第2接合點 (d ) 之摺子為止 (e ) 著第2接合 線將第1接合點與第2 形成畤，進行與第2接 之線接合方法’其特激 管稍微下降至線上附著 使毛细管上升之工程 線將第1接合點與第2 特徴係具有： 之工程； 接著進行與第2接合點 工程； 其後，進行使毛细管與 逆轉動作之工程 下降至線上附著有堅111 升，並將線送出，將朝 接合點連接之工程。 經濟部智葸財產局員工消費合作社印製 本紙張尺度適用中國國家榡準（CNS } A4規格（210X297公釐）
TW086116326A 1996-12-27 1997-11-04 Wire bonding method TW463278B (en)

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US5967401A (en) 1999-10-19
JPH10189646A (ja) 1998-07-21
KR100256399B1 (ko) 2000-05-15
JP3333413B2 (ja) 2002-10-15
KR19980063442A (ko) 1998-10-07

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