TW448544B - Method to generate a memory-cells arrangement - Google Patents
Method to generate a memory-cells arrangement Download PDFInfo
- Publication number
- TW448544B TW448544B TW089109566A TW89109566A TW448544B TW 448544 B TW448544 B TW 448544B TW 089109566 A TW089109566 A TW 089109566A TW 89109566 A TW89109566 A TW 89109566A TW 448544 B TW448544 B TW 448544B
- Authority
- TW
- Taiwan
- Prior art keywords
- notch
- isolation
- substrate
- transistor
- scope
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000002955 isolation Methods 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000002513 implantation Methods 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19923262A DE19923262C1 (de) | 1999-05-20 | 1999-05-20 | Verfahren zur Erzeugung einer Speicherzellenanordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW448544B true TW448544B (en) | 2001-08-01 |
Family
ID=7908699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089109566A TW448544B (en) | 1999-05-20 | 2000-05-18 | Method to generate a memory-cells arrangement |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE19923262C1 (de) |
| TW (1) | TW448544B (de) |
| WO (1) | WO2000072377A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573137B1 (en) | 2000-06-23 | 2003-06-03 | International Business Machines Corporation | Single sided buried strap |
| US6339241B1 (en) * | 2000-06-23 | 2002-01-15 | International Business Machines Corporation | Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitch |
| DE10038728A1 (de) * | 2000-07-31 | 2002-02-21 | Infineon Technologies Ag | Halbleiterspeicher-Zellenanordnung und Verfahren zu deren Herstellung |
| US6498061B2 (en) * | 2000-12-06 | 2002-12-24 | International Business Machines Corporation | Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation |
| DE10321496B4 (de) * | 2003-05-13 | 2006-07-27 | Infineon Technologies Ag | Herstellungsverfahren für einen einseitig angeschlossenen Grabenkondensator |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0824166B2 (ja) * | 1986-11-26 | 1996-03-06 | 松下電子工業株式会社 | 半導体装置の製造方法 |
| US4794434A (en) * | 1987-07-06 | 1988-12-27 | Motorola, Inc. | Trench cell for a dram |
| US4945069A (en) * | 1988-12-16 | 1990-07-31 | Texas Instruments, Incorporated | Organic space holder for trench processing |
| JPH0384924A (ja) * | 1989-08-29 | 1991-04-10 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| US5529944A (en) * | 1995-02-02 | 1996-06-25 | International Business Machines Corporation | Method of making cross point four square folded bitline trench DRAM cell |
| US5937296A (en) * | 1996-12-20 | 1999-08-10 | Siemens Aktiengesellschaft | Memory cell that includes a vertical transistor and a trench capacitor |
-
1999
- 1999-05-20 DE DE19923262A patent/DE19923262C1/de not_active Expired - Fee Related
-
2000
- 2000-05-16 WO PCT/DE2000/001543 patent/WO2000072377A1/de active Application Filing
- 2000-05-18 TW TW089109566A patent/TW448544B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE19923262C1 (de) | 2000-06-21 |
| WO2000072377A1 (de) | 2000-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |