TW437019B - Improved wiring substrate with thermal insert - Google Patents

Improved wiring substrate with thermal insert Download PDF

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Publication number
TW437019B
TW437019B TW088114105A TW88114105A TW437019B TW 437019 B TW437019 B TW 437019B TW 088114105 A TW088114105 A TW 088114105A TW 88114105 A TW88114105 A TW 88114105A TW 437019 B TW437019 B TW 437019B
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TW
Taiwan
Prior art keywords
thermal expansion
integrated circuit
expansion coefficient
layer
insert
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TW088114105A
Other languages
Chinese (zh)
Inventor
Sundar Kamath
David Chazan
Solomon I Beilin
Original Assignee
Kulicke & Amp Soffa Holdings I
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Publication of TW437019B publication Critical patent/TW437019B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

A wiring substrate with reduced thermal expansion. A wiring substrate, such as a laminated PWB, thin film circuit, lead frame, or chip carrier accepts an integrated circuit, such as a die, a flip chip, or a BGA package. The wiring substrate has a thermal expansion reduction insert in a thermal expansion stress region where the integrated circuit is mounted. The thermal expansion reduction insert may extend a selected distance from the edge or edges of the integrated circuit attachment area, or stop a selected distance from the edge or edges of the integrated circuit attachment area, or be essentially equal to the integrated circuit attachment area. The thermal expansion reduction insert reduces the thermal expansion of the wiring substrate in the region that is joined to the integrated circuit, thus reducing thermal stress between components of the wiring substrate-integrated circuit assembly. In a specific embodiment, the wiring substrate is a laminated printed wiring board with the thermal expansion reduction insert in a layer next to an outer layer to which the integrated circuit is joined (mounted). In a further embodiment the thermal stress reduction insert is a CIC insert or a copper-molybdenum insert. In an alternative embodiment, the wiring substrate is a thin film substrate or a VLSI substrate.

Description

Γ Λ〇7 Q 1 9 -1窠號 88114105_年月 Η 修正 五、發明說明(1) 本申請案申請專利來自1998年8月19曰所申請之經由 Sundar Kamath和David Chazan(美國代理人檔案號碼 01 9 9 0 5 - 〇 〇 1 9 0 0 )其標題為"減少因熱不協調所致互連應力 之絕緣覆晶或球格拇陣列",以提及之方式併入本文中D 此申請案正與美國實用應用編號第6 0 1 0 9 7 0 6 6 ,標題為11減 少因熱不協調所致互連應力之絕緣覆晶或球格栅陣列,', 由Sundar Kamath ,David Chazan:fti戶斤羅門白林(美國代理 人檔案號碼0 1 9 9 0 5 - 0 0 1 9 1 0 )同時申請,以提及之方式併入 本文中。 發明背景Γ Λ〇7 Q 1 9 -1 No. 88114105_Year Month Η Amendment V. Description of the Invention (1) The patent application for this application is from August 19, 1998, and was applied for by Sundar Kamath and David Chazan (US agent file No. 01 9 9 0 5-〇〇1 9 0 0), whose title is "Insulating flip chip or ball grid array to reduce interconnect stress due to thermal mismatch", incorporated herein by reference D This application is in line with U.S. Practical Application No. 6 0 1 0 9 7 0 6 6 and the title is 11 Insulating Chip or Ball Grid Array for Reducing Interconnection Stress Due to Thermal Mismatch, ', by Sundar Kamath, David Chazan: FTI Huomen Bailin (US agent file number 0 1 9 0 5-0 0 1 9 1 0) apply at the same time, incorporated herein by reference. Background of the invention

電路基材例如印刷電路板("印刷電路板s π ),晶片載體 ( 和VLS I基體等之製造商面對一個主要問題是控制基體的各 材料間(在層合之基體的情況)及基體材料與經安裝在該基 體上之各組件間之熱膨脹應力。 熱應力可能在至少兩種情況下發生。一種情況是:當熱 梯度存在時。基體的一個區域中之較高溫度,例如熱源下 面可造成熱膨脹(相對於基體之較冷區域),甚至基體係由 單一材料所造成,此情況之影響時常可經由緩慢改變溫度 予以緩和,因此降低熱梯度。 第二種情況是:當使用具有不同熱膨脹係數(”熱膨脹係 數”)之材料時。因此,高溫度改變時,—種材料較其他材 料以不同速率膨和收縮(典型以速度之溫度,無單位係數 例如m m / m m表示)。差別之熱膨脹係數可造成各種問題,不 管將材料加熱或冷卻時之速率如何。如果將材料逕合在一 起或在其他情況附著在一起,則當溫度改變時,會產生熱Manufacturers of circuit substrates such as printed circuit boards (" printed circuit boards s π), wafer carriers (and VLS I substrates, etc.) face a major problem in controlling the materials between the substrates (in the case of laminated substrates) and Thermal expansion stress between the base material and the components mounted on the base. Thermal stress can occur in at least two cases. One is when a thermal gradient is present. Higher temperatures in an area of the base, such as a heat source The following can cause thermal expansion (cold area relative to the substrate), and even the base system is caused by a single material. The impact of this situation can often be mitigated by slowly changing the temperature, so the thermal gradient is reduced. The second case is: when used with Materials with different coefficients of thermal expansion ("coefficient of thermal expansion"). Therefore, when high temperature changes, a material expands and contracts at a different rate than other materials (typically expressed at the temperature of the speed, without unit coefficients such as mm / mm). The coefficient of thermal expansion can cause various problems, regardless of the rate at which the material is heated or cooled. Together or attached together in other situations, heat will be generated when the temperature changes

O:\60\600l8.ptc 第6頁 Γ 4370 1 9 _案號 88114105_年月日__ 五、發明說明(2) 應力。為了減輕應力,此應力可導致材料之變形(翹曲)或 甚至破裂。 舉例而言,印刷電路板典型係經由層合數層之不同材料 在一起而形成。將導電層,例如,根據所需要之電路略圖 所形成圖型之銅層經由電介層予以分開並層合至其上,電 介層提供導電層間之電絕緣。電介層典型是聚合樹脂,例 如環氧樹脂,包括纖維加固之樹脂。電介層時常具有大約 50至70 ppm / °C之熱膨脹係數而經使用於導電層中之金屬 具有大約1 6至1 7 p p m / °C之熱膨脹係數。因此,經置放在 印刷電路板上或相似電路基材上之熱源可創造熱應力。 同時代積體電路之增加複雜性以許多方式影響自熱應力:; 所發生之問題。首先,極大型積體電路("V L S I u )高元件計 數晶片(時常意指單晶片)與具有較低之元件計數的晶片相 比較,可產生更多的熱。晶片上元件的收縮尺寸意指:將 熱時常集中在較小區域中。某些1C產生超過1 0 w/cm2。收 縮尺寸亦意指*晶片上之痕跡是較細之間距而晶片上之接 觸墊片亦具有較細之間距,並未述及:接觸墊片的數目已 實質上增加。最後,在許多情況下,V L S I晶片的總尺寸已 增加。增加之尺寸導致較大之總膨脹或收縮,其可產生較 高之熱應力。 現已發展各種工業技術來解決較細之接觸間距及增加接|; 觸點之數目,實施包括球格柵陣列(π球格柵陣列s "),它 是具有一列的隆起塊,典型是焊料點在包裝之一表面上之 包裝晶片。該包裝可包括晶片載體或引線框,具有將實際 半導體O: \ 60 \ 600l8.ptc Page 6 Γ 4370 1 9 _Case No. 88114105_year month day__ 5. Description of the invention (2) Stress. To reduce the stress, this stress can cause the material to deform (warp) or even crack. For example, printed circuit boards are typically formed by laminating several layers of different materials together. A conductive layer, for example, a patterned copper layer formed according to the required circuit outline is separated and laminated to it by a dielectric layer, which provides electrical insulation between the conductive layers. Dielectric layers are typically polymeric resins, such as epoxy resins, including fiber-reinforced resins. Dielectric layers often have a coefficient of thermal expansion of about 50 to 70 ppm / ° C and metals used in conductive layers have a coefficient of thermal expansion of about 16 to 17 p p m / ° C. Therefore, a heat source placed on a printed circuit board or similar circuit substrate can create thermal stress. The increased complexity of contemporaneous integrated circuits affects self-heating stresses in many ways :; problems that occur. First, a very large integrated circuit (" V L S I u) high component count wafer (often referred to as a single wafer) can generate more heat than a wafer with a lower component count. The shrink size of components on a wafer means that heat is often concentrated in smaller areas. Some 1Cs produce more than 10 w / cm2. Shrinking size also means that * the traces on the wafer are finer and the contact pads on the wafer also have finer pitches, which is not mentioned: the number of contact pads has substantially increased. Finally, in many cases, the overall size of V L S I wafers has increased. Increasing the size results in a larger total expansion or contraction, which can result in higher thermal stress. Various industrial technologies have been developed to address the finer contact pitch and increase the number of contacts. The implementation includes a ball grid array (π ball grid arrays "), which is a raised block with a row, typically Packaging wafers with solder spots on one surface of the package. The package may include a wafer carrier or lead frame

Q:\60\60018.ptc 第7頁 卜 437 0 1 9 _案號88114105_年月曰__ 五、發明說明(3) . 晶片連合至該載體上及將電接觸點有I C晶片至球格柵陣列 的球上。另外實例稱為M覆晶",它相似於球格柵陣列包裝 因為:將隆起塊典型是焊料,低共熔(共晶)或導電黏合劑 形成在I C晶片上之接觸墊片上。然後將此晶片"倒裝n至電 路基材上並予以連合。通常保留M覆晶"來敘述直接晶片附 著之型式,即使它極相似於包裝之球格栅陣列方法。 遺憾的是,I C包成絕緣覆晶可能由一種材料所造成,例 如塑膠,陶瓷或半導體,較電路基材中之任何材料具有不 同之熱膨脹係數。使事情複雜,接觸陣列的較細間距,典 型意指:必須使用較細之電路圖型在電路基材上。較細之 導線不如較粗之導線堅固而因此,當歷經應力時,更易於 破裂。相似地,如果剪切應力發展在I C與基體之間,則較 小之焊料球將具有甚小之強度未抵抗應力(包括工作硬化) 且可能在接頭處故障或可能裂化。此種故障之特別不可疏 忽之觀點是:在一種溫度下可建立電之接觸而在另外溫度 下則無。因為熱膨脹和收縮將電路徑之裂化或破裂"半片" 併合在一起而分離15 經使用以改良經附看至印刷電路板上之球格柵陣列可靠 性之一種技術是下填球格柵陣列。下填典型包括施加液體 至球格柵陣列的(各)邊緣,液體經由毛細作用予以芯吸在 球格柵陣列下。然後,液體固化,或予以固化,例如通過 聚合過程,舉例而言,"膠合"球格柵陣列至印刷電路板之 表面上。典型選擇下填材料的熱膨脹係數來匹配造成球格 柵陣列球之材料典型足焊料的熱膨脹係數。配匹此等熱膨 脹係數來減少下填材料採球格柵陣列爆開電路基材表面,Q: \ 60 \ 60018.ptc Page 7 437 0 1 9 _Case No. 88114105_Year Month __ V. Description of the invention (3). The chip is connected to the carrier and the IC contact point has an IC chip to the ball Grid array of balls. Another example is called "M flip-chip", which is similar to ball grid array packaging because: the bumps are typically solder, eutectic (eutectic) or conductive adhesive formed on the contact pads on the IC wafer. This wafer is then flip-chiped onto the circuit substrate and joined. M flip-chip is usually retained to describe the type of direct wafer attachment, even though it is very similar to the packaged ball grid array method. Unfortunately, the insulation coating of the IC may be caused by a material, such as plastic, ceramic, or semiconductor, which has a different coefficient of thermal expansion than any material in the circuit substrate. To complicate things, the finer pitch of the contact array typically means that a thinner circuit pattern must be used on the circuit substrate. Thinner wires are less robust than thicker wires and are therefore more likely to break when subjected to stress. Similarly, if the shear stress develops between IC and the substrate, the smaller solder ball will have a very small strength that does not resist the stress (including work hardening) and may fail at the joint or may crack. A particularly non-negligible view of this type of failure is that electrical contact can be established at one temperature and not at other temperatures. Cracks or ruptures of electrical paths due to thermal expansion and contraction " half pieces " combined and separated15 One technique used to improve the reliability of ball grid arrays attached to printed circuit boards is underfill ball grids Array. Underfilling typically involves applying liquid to the (each) edge of the ball grid array, and the liquid is wicked under the ball grid array by capillary action. The liquid is then cured, or cured, such as by a polymerization process, for example, " glue " an array of ball grids onto the surface of a printed circuit board. The thermal expansion coefficient of the underfill material is typically selected to match the thermal expansion coefficient of the typical foot solder of the material that causes the ball grid array ball. Matching these thermal expansion coefficients to reduce the underfill material ball grid array bursting the circuit substrate surface,

O:\60\60013.ptc 第8頁 ·' 4 37 0 1 9 _案號 88114105_年月日__ 五、發明說明¢4) . 破壞焊料接頭,或使焊料球破裂之機會。遺憾的是,下層 材料之熱膨脹係數可能不是積體電路之熱膨脹係數或印刷 電路板之熱膨脹係數的良好配對。 經使用以減少積體電路與電路基材間熱膨脹係數差之另 外技術是併合一個熱膨脹係數匹配層在印刷電路板之層合 結構中。熱膨脹係數匹配層通常提供之熱膨脹係數較接近 於積體電路之熱膨脹係數,其典型包括矽晶片,熱膨脹係 數配匹層典型是低熱膨脹係數材料的薄片,例如 64%Fe/3 6%Ni(—般稱為不變鋼(nINVAR"TM))或鉬,包成鍍 以銅。該層合層典型以箔而提供,此箔根據所需要之電路 圖型予以形成圖型或大多未予形成圖型供使用作為接地平 面等,銅-不變鋼-銅箔一般稱為” C I C 11箔。此等箔通常延 伸遍及全部層合層。遺撼的是,與標準銅箔比較,低熱膨 脹係數材料例如C I C或銅/鉬相當昂貴。 因此之故,需要減少經由熱應力在電路基材中及在積體 電路與電路基材的組合體中所造成之故障。更意欲實現減 少故障而不會引發其他不想要之結果。 發明總結 本發明提供具有減少熱膨脹之電路基材。電路基材例如 層合之印刷電路板,薄膜電路,引線框或晶片載體接受積 體電路例如晶粒,覆晶,或球格柵陣列包裝。該電路基材 具有熱膨脹減少插入物在接近積體電路之熱膨脹應力區域 中。在一個具體實施例中,熱膨脹減少插入物自積體電路 附著區域之(各)邊緣延伸一段所選擇之距離,而在另外具 體實施例中,它自積體電路附著區域之(各)邊緣停止一段O: \ 60 \ 60013.ptc Page 8 · '4 37 0 1 9 _Case No. 88114105_Year Month Day__ V. Description of the invention ¢ 4). The opportunity to damage solder joints or rupture solder balls. Unfortunately, the thermal expansion coefficient of the underlying material may not be a good match for the thermal expansion coefficient of the integrated circuit or the thermal expansion coefficient of the printed circuit board. Another technique used to reduce the difference in thermal expansion coefficient between the integrated circuit and the circuit substrate is to incorporate a thermal expansion coefficient matching layer in the laminated structure of the printed circuit board. The thermal expansion coefficient matching layer usually provides a thermal expansion coefficient that is closer to the thermal expansion coefficient of the integrated circuit. It typically includes a silicon wafer. The thermal expansion coefficient matching layer is typically a sheet of low thermal expansion coefficient material, such as 64% Fe / 3 6% Ni (— Generally known as invariable steel (nINVAR " TM)) or molybdenum, clad with copper plating. The laminated layer is typically provided as a foil. This foil is patterned according to the required circuit pattern or is mostly unformed for use as a ground plane. Copper-invariant steel-copper foil is generally referred to as "CIC 11" Foil. These foils usually extend across the entire laminate. What's shocking is that low thermal expansion materials such as CIC or copper / molybdenum are quite expensive compared to standard copper foils. Therefore, there is a need to reduce thermal stress on circuit substrates. Neutralizes the failures caused by the combination of integrated circuits and circuit substrates. It is more intended to reduce failures without causing other unwanted results. SUMMARY OF THE INVENTION The present invention provides circuit substrates with reduced thermal expansion. Circuit substrates For example, laminated printed circuit boards, thin film circuits, lead frames or wafer carriers accept integrated circuits such as die, flip chip, or ball grid array packaging. The circuit substrate has thermal expansion to reduce the thermal expansion of the insert near the integrated circuit In the stress area, in a specific embodiment, the thermal expansion reducing insert extends a selected distance from the edge (s) of the integrated circuit attachment area , And in another specific embodiment, it stops for a period from the edge of each circuit attachment area

0:\60\60018.ptc 第9頁 1 ' 43701 9 _案號 88114105_年月日__ 五、發明說明(5) . 所選擇之距離。在更另外之具體實施例中,該熱膨脹區域 基本上等於積體電路附著區域,熱膨脹減少插入物減少經 連接至積體電路之區域中,電路基材的熱膨服,因此減少 電路基材/積體電路组合體的各組體間之熱應力。 在特定具體實施例甲,電路基材是層合之印刷電路板具 有熱膨脹減少插入物在接近外層之一層中,(將積體電路 連接(安裝)至其上)。在另外具體實施例中,熱膨脹減少 插入物是C I C插入物或銅/鉬插入物,在交替之具體實施例 中,電路基材是薄膜基體或VLSI基體。 本發明的此等及其他具體實施例以及其優點和特徵連同 下列本文及附隨之圖式予以更詳細敘述。 圖式之簡述 圖1 A是習見之單層印刷佈線板基體之簡化截面圖; 圖1 B是具有附著之I C的習見4層印刷電路板基體之簡化 截面圖; 圖2 A是低熱膨脹係數箔之簡化截面圖; 圖2 B是依照本發明,低熱膨脹係數插入物在金屬箔中之 簡化截面圖; 圖3是依照,本發明之一具體實施例,具有經安裝在印刷 電路板上之I C下面之低熱膨脹係數插入物之多層印刷電路 板; 圖4 A是具有經安裝之I C的印刷電路板簡化頂視圖,舉例 說明:熱膨脹應力區域; 圖4 B是根據本發明之一具體實施例,具有形成圖型之低 熱膨脹係數導電插入物之層合物的簡化頂視圖;及0: \ 60 \ 60018.ptc Page 9 1 '43701 9 _Case No. 88114105_Year Month Day__ V. Description of the invention (5). The selected distance. In a further specific embodiment, the thermal expansion area is substantially equal to the integrated circuit attachment area, the thermal expansion reducing insert reduces the thermal expansion of the circuit substrate in the area connected to the integrated circuit, thereby reducing the circuit substrate / Thermal stress between groups of integrated circuit assemblies. In a specific embodiment A, the circuit substrate is a laminated printed circuit board having a thermal expansion reducing insert in a layer close to the outer layer (connecting (mounting) the integrated circuit thereto). In another embodiment, the thermal expansion reducing insert is a C IC insert or a copper / molybdenum insert. In alternate embodiments, the circuit substrate is a thin film substrate or a VLSI substrate. These and other specific embodiments of the present invention, as well as their advantages and features, are described in more detail with the following text and accompanying drawings. Brief Description of the Drawings Figure 1 A is a simplified cross-sectional view of a conventional single-layer printed wiring board substrate; Figure 1 B is a simplified cross-sectional view of a conventional 4-layer printed circuit board substrate with an attached IC; Figure 2 A is a low thermal expansion coefficient A simplified cross-sectional view of a foil; Figure 2B is a simplified cross-sectional view of a low thermal expansion coefficient insert in a metal foil according to the present invention; Figure 3 is a specific embodiment of the present invention having a printed circuit board mounted in accordance with the present invention. Multilayer printed circuit board with low thermal expansion coefficient insert below the IC; Figure 4 A is a simplified top view of a printed circuit board with a mounted IC, for example: thermal expansion stress area; Figure 4 B is a specific embodiment according to the present invention , A simplified top view of a laminate having a patterned low thermal expansion coefficient conductive insert; and

O:\60\6OO13.ptc 第10頁 437 Ό 1 9 修正 _索號 88114105 五、發明說明(6) 圖5是根據本發明之另外具體實施例,經安裝在印刷電 路板上之多晶片模塊之簡化戴面圖。 特定具體實施例之敘迆 本發明提供具有改良熱應力特性之製造物_供使用於電 路基材中及其製法。僅作為實例,製造之物括印刷電 片載體’VLSI基體,薄膜基體,1C 如球格柵 路板 陣列或微球格柵陣列包裝或類似以及具有附C設備之 基體。I C元件可能是覆晶,包裝之球格栅陣列隻微球格栅 ,列元件’具有電線連合墊片之;[c等且可經由各種晶粒附 著方法之任一種予以連接至基體上,如該項技藝中所熟知 者’包括焊料晶粒附著,覆晶和球格柵陣列焊料晶粒附著 例如受控制之陷縮晶片連接("C 4'_ )。 圖1 A是習見之高密度印刷電路板局部層合物丨〇之簡化截 面圖。該局部層合物係由單層的絕緣材料丨2例如環氧樹脂 所形成而經由國家電機製造協會(NEMA) aFR4TM或FR5TM名^ 出售’將銅片1 4 ,1 6各自層合至絕緣片板的上表面J 8和下* 表面2 0上’將所需要之導體圖型2 2轉移至銅片上,例如, 經由微影照像蝕刻方法’係該項技藝中所熟知,應 者:局部層合物可具有一導體僅在一面上,或全^,及 將兩面形成圖型,及其他特徵例如通孔之隔 ^ 二 部層合物典型層合在一起而形成一多層印刷電路J數個局 圖1 B是根據本發明之一具體實施例,四層印 體3 0之簡化截面圖(各層之數目係述及金屬層之數目,土 非局部層合物片板數目)。將三個電介薄片32 , 而 如FR4TM片板層合而形成層合之印刷電路板,印刷電路板力的O: \ 60 \ 6OO13.ptc Page 10 437 Ό 1 9 Correction_ cable number 88114105 V. Description of the invention (6) Figure 5 is a multi-chip module mounted on a printed circuit board according to another embodiment of the present invention Simplified face map. Description of Specific Embodiments The present invention provides an article having improved thermal stress characteristics for use in a circuit substrate and a method for making the same. By way of example only, manufactured substrates include a printed-electrode carrier 'VLSI substrate, a thin-film substrate, a 1C such as a ball grid circuit board array or a microsphere grid array package or the like and a substrate with C-attached equipment. IC components may be chip-on-chip, packaged ball grid arrays are only microsphere grids, and column elements' have wire bonding pads; [c, etc. and can be connected to the substrate through any of various die attachment methods, such as Those skilled in the art 'include solder die attachment, flip chip and ball grid array solder die attachment such as controlled shrink wafer bonding (" C 4'_). FIG. 1A is a simplified cross-sectional view of a conventional high-density printed circuit board partial laminate. The local laminate is formed of a single layer of insulating material, such as epoxy resin, and sold under the name of National Electrical Manufacturers Association (NEMA) aFR4TM or FR5TM. ^ Sold each of copper sheets 1 4 and 16 to the insulating sheet. The upper surface J 8 and the lower surface * of the board "transfer the required conductor pattern 2 2 to the copper sheet, for example, via photolithographic etching method" are well known in the art. The laminate may have a conductor on only one side, or all sides, and a pattern formed on both sides, and other features such as through-hole separation. The two-layer laminate is typically laminated together to form a multilayer printed circuit. J Figure 1B is a simplified cross-sectional view of a four-layer printed body 30 according to a specific embodiment of the present invention (the number of each layer refers to the number of metal layers and the number of non-local laminate sheets). Three dielectric sheets 32 are laminated, such as FR4TM sheet to form a laminated printed circuit board.

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第11頁 ;43701 9 _案號88114105_年月日__ 五、發明說明(7) 表面38具有經形成圖型之金屬層,其包括(電線)40及接觸 墊片4 2。將I C設備4 4連接至接觸墊片上。在此舉例說明 中,I C設備是球格柵陣列或微球格柵陣列的簡化表示法, 但可取代其他型式之元件例如,覆晶或反面附著之晶粒。 如上所述,將第二形成圖型之金屬層46形成在第一與第二 電介層32與34間。經形成圖型之金屬層包括第一部份48 , 例如銅導電層及中間熱膨脹材料的第二部份5 0。中間熱膨 脹層是一層之材料其具有之熱膨脹係數較印刷電路板之熱 膨服係數更接近I C 4 4的熱膨服係數。舉例而言,如果I C是 塑膠包令之VLSI矽晶片,則該矽晶片具有大約3 ppm/ °C之 熱膨脹係數。包裝之塑膠典型具有高得多之熱膨脹係數,( 但是因為是塑膠,可回應熱應力而變形。印刷電路板之電 介層的熱膨脹係數典型在大約50至70 ppm/ °C間而典型銅 層之熱膨脹係數是大約1 6 . 6 p p m / °C。 舉例而言,钥具有大約5 p p m / °C之熱膨脹係數,其係在 I C之熱膨脹係數與印刷電路板之熱膨脹係數間,因此,它 可操作為中間熱膨脹層,如其他金屬一樣例如鎢或各種不 銹鋼。因此,摻合鉬入第二形成圖型之金屬層的第二部份 中能降低第二區域中印刷電路板的熱膨脹及減少與附著 區域5 2中I C與印刷電路板間之熱膨脹不協調。應了解 者,"經形成圖型之金屬層"不必須形成圖型,特別在I C 11 下"之區域中。 雖然中間熱膨脹材料可具有I C者與印刷電路板者間之熱 膨脹係數,但是它亦可具有小於I C之熱膨脹係數,例如, 不變鋼(I N V A RTM )具有大約1 p p m / °C之熱膨脹係數。使用不Page 11; 43701 9 _Case No. 88114105_Year Month Date__ V. Description of the invention (7) The surface 38 has a patterned metal layer, which includes (wire) 40 and contact pads 42. Connect the IC device 4 to the contact pad. In this example, the IC device is a simplified representation of a ball grid array or a micro ball grid array, but it can replace other types of components, such as flip-chips or dies attached on the opposite side. As described above, the second patterned metal layer 46 is formed between the first and second dielectric layers 32 and 34. The patterned metal layer includes a first portion 48, such as a copper conductive layer and a second portion 50 of the intermediate thermal expansion material. The intermediate thermal expansion layer is a layer of material that has a thermal expansion coefficient that is closer to the thermal expansion coefficient of I C 4 4 than the thermal expansion coefficient of printed circuit boards. For example, if IC is a VLSI silicon wafer made of plastic, the silicon wafer has a thermal expansion coefficient of about 3 ppm / ° C. Packaging plastics typically have a much higher coefficient of thermal expansion, but because they are plastic, they can deform in response to thermal stress. The thermal expansion coefficient of the dielectric layer of a printed circuit board is typically between about 50 to 70 ppm / ° C and the typical copper layer The thermal expansion coefficient is about 16.6 ppm / ° C. For example, the key has a thermal expansion coefficient of about 5 ppm / ° C, which is between the thermal expansion coefficient of the IC and the thermal expansion coefficient of the printed circuit board, so it can be The operation is an intermediate thermal expansion layer, like other metals such as tungsten or various stainless steels. Therefore, blending molybdenum into the second part of the second patterned metal layer can reduce the thermal expansion of the printed circuit board in the second area and reduce the The thermal expansion between the IC and the printed circuit board in the adhesion area 5 2 is not coordinated. It should be understood that "the metal layer formed by the pattern" does not have to form a pattern, especially in the region under the "IC 11". Although the middle The thermal expansion material may have a coefficient of thermal expansion between the IC and the printed circuit board, but it may also have a coefficient of thermal expansion smaller than that of the IC, for example, INVA RTM has approximately Coefficient of thermal expansion of 1 p p m / ° C. Not used

O:\60\60018.ptc 第12頁 437 0 1 9 _案號 88I14I05_年月日__ 五、發明說明(8) ^ 變鋼或相似材料在第二區域中可補償其他區域中之熱膨脹 及平衡熱應力。 已試驗一種技術,即:#合銅-不變鋼-銅("C I C ")箔遍 及整個導電層作為中間導電層。然而,使用低熱膨脹係數 層遍及印刷電路板之導電層可造成不良之結果。首先,降 低一層的熱膨脹特性不一定匹配各層或安裝元件的熱膨脹 特性。參照圖1 B,可見:匹配I C 4 4的熱膨脹係數至組合附 著區域5 2係需要。例如,如果整個層的印刷電路板層合物 是不變鋼或C I C,則I C 之熱膨脹可能高於印刷電路板之熱 膨脹。因此,可產生熱膨脹因為印刷電路板的一層之熱膨 脹係數太低而非太高。 第二層合物中具有低熱膨脹係數一整個層可造成其他問 題,像翹曲或破裂。實際上,印刷電路板具有複合熱膨脹 係數它是層合物_各層的熱膨脹係數之大略總和,經由各 層的剛性,強度予以調整。舉例而言,如果將薄C I C層夾 置在兩個厚F R 4TM層之間,則該C I C層有可能伸展或在其他 情況,補償熱膨脹係數之差 > 此現象可造成層合組合體之 翹< 曲及/或電介層或金屬層的裂化,尤其如果金屬層是相 當脆之材料(例如銅)。最後,與銅相比較,合金例如鉬和 不變鋼相當昂貴,因此,需要減少,使用此等材料且彼等 通常並非如銅那樣是電或熱的良好導體。 本發明經由提供中間熱膨脹應力釋放插入物在安裝之I C 或其他組件的區域中而避免此等問題。因此,I C的熱膨脹 係數可能至少部份匹配下面之印刷電路板,或中間熱膨脹 層可補償遠離I C之各區域中該層的熱膨脹。例如,如果不O: \ 60 \ 60018.ptc Page 12 437 0 1 9 _ Case No. 88I14I05_Year Month Day__ V. Description of the invention (8) ^ Transformed steel or similar materials in the second area can compensate for the thermal expansion in other areas And balance thermal stress. A technique has been tested, that is: # 合 铜-恒 钢-铜 (" C I C ") foil as the intermediate conductive layer throughout the entire conductive layer. However, the use of a low thermal expansion layer throughout the conductive layer of the printed circuit board can cause undesirable results. First, reducing the thermal expansion characteristics of one layer does not necessarily match the thermal expansion characteristics of each layer or mounting component. Referring to FIG. 1B, it can be seen that matching the thermal expansion coefficient of I C 4 4 to the combined attachment area 5 2 is required. For example, if the entire layer of the printed circuit board laminate is constant steel or C I C, the thermal expansion of I C may be higher than the thermal expansion of the printed circuit board. Therefore, thermal expansion can occur because the thermal expansion coefficient of one layer of the printed circuit board is too low rather than too high. An entire layer with a low coefficient of thermal expansion in the second laminate can cause other problems, such as warping or cracking. In fact, the printed circuit board has a composite thermal expansion coefficient, which is the approximate sum of the thermal expansion coefficients of the laminate and each layer, which is adjusted by the rigidity and strength of each layer. For example, if a thin CIC layer is sandwiched between two thick FR 4TM layers, it is possible that the CIC layer is stretched or otherwise compensates for the difference in coefficient of thermal expansion > This phenomenon can cause warping of the laminated assembly < Cracking and / or cracking of the dielectric or metal layer, especially if the metal layer is a relatively brittle material (such as copper). Finally, compared to copper, alloys such as molybdenum and constant steel are quite expensive, and therefore need to be reduced. These materials are used and they are usually not good conductors of electricity or heat like copper. The present invention avoids these problems by providing an intermediate thermal expansion stress relief insert in the area of the IC or other component installed. Therefore, the thermal expansion coefficient of IC may at least partially match the underlying printed circuit board, or the intermediate thermal expansion layer may compensate for the thermal expansion of the layer in areas far from IC. For example, if not

O:\60\600l8.ptc 第13頁 ! ' 43701 9 _案號 88114105_年月日_ί±^._ 五、發明說明(9) . ^ 變鋼,C I C或其他低熱膨脹係數材料存在在I C下面,但是 不遍及内部電介層,則該低熱膨脹係數材料可至少部份補 償該層中其餘較高熱膨脹係數(較I C而言)部份。因此, 即使低熱膨脹係數材料不像I C熱膨脹,相同層中之相對高 熱膨脹係數材料至少部份補償熱膨脹係數之差而導致熱膨 脹應力區域更密匹配I C之熱膨脹係數。 圖2 Α顯示:包以或鍍敷以銅層6 2,6 4之一層的中間熱膨 脹材料6 0例如不變鋼或鉬的簡化截面圖。如果將第二金屬 層的第二部份形成圖型,特別如果第二部份將攜帶電信 號,則需要將中間熱膨脹材料的一表面或兩表面鍍敷或包 以銅。材料之總厚度在約6至1 6密耳(m i 1 )之間而銅層係大; 約1 . 2 5密耳厚,唯此等厚度僅經由實例而提供。在某些實 例中,需要選擇相當厚之中間熱膨脹材料,即:1 6密耳或 更厚而提供充分剛度在熱膨脹區域中。在此等實例中,併 合中間熱膨脹材料之導電層宜是一個接地平面,供電平面 或其他導電平面(其利用較厚之金屑)。 圖2 B是根據本發明供使用於印刷電路板層合物之金屬層 65的簡化截面圖。鍍敷或包層67的包括一個銅部份69及一 個中間熱膨脹部分71 ^將一層的銅7 3鍍敷或包在下面各層 上。因此,整個金屬層可根據習用之微影照像/蝕刻技術 而製造,若須要,適合於触刻中間熱膨脹材料。以此種方; 式維持良好導電性在導體層的第一與第二部分間^ 圖3是根據本發明之另外具體實施例,印刷電路板8 0的 簡化截面圖(為個簡化各種經形成圖型或未經形成圖型之 金屬層未顯示)。將熱膨脹應力補償插入物8 2埋置在印刷O: \ 60 \ 600l8.ptc Page 13! '43701 9 _ Case No. 88114105_year month day_ί ± ^ ._ V. Description of the invention (9). ^ Variable steel, CIC or other low thermal expansion materials exist in Below the IC, but not throughout the internal dielectric layer, the low coefficient of thermal expansion material can at least partially compensate for the remaining higher coefficient of thermal expansion (than IC) portion of the layer. Therefore, even if the material with low thermal expansion coefficient is not thermally expanded like IC, the relatively high thermal expansion material in the same layer at least partially compensates for the difference in thermal expansion coefficient, resulting in the thermal expansion stress region more closely matching the thermal expansion coefficient of IC. Figure 2A shows a simplified cross-sectional view of an intermediate thermal expansion material 60, such as a constant steel or molybdenum, coated or plated with one of the copper layers 62, 64. If the second part of the second metal layer is patterned, especially if the second part will carry a telecommunications signal, one or both surfaces of the intermediate thermal expansion material need to be plated or coated with copper. The total thickness of the material is between about 6 to 16 mils (mi) and the copper layer is large; about 1.25 mils thick, but these thicknesses are provided by way of example only. In some instances, it may be necessary to select a relatively thick intermediate thermal expansion material, i.e., 16 mils or more to provide sufficient stiffness in the thermal expansion region. In these examples, the conductive layer incorporating the intermediate thermal expansion material should preferably be a ground plane, a power plane, or other conductive plane (which uses thicker gold shavings). Figure 2B is a simplified cross-sectional view of a metal layer 65 for use in a printed circuit board laminate according to the present invention. The plating or cladding 67 includes a copper portion 69 and an intermediate thermal expansion portion 71. A layer of copper 73 is plated or coated on the lower layers. Therefore, the entire metal layer can be manufactured according to the conventional photolithography / etching technique, and if necessary, it is suitable for touching an intermediate thermal expansion material. In this way, good conductivity is maintained between the first and second parts of the conductor layer. FIG. 3 is a simplified cross-sectional view of a printed circuit board 80 according to another embodiment of the present invention. Patterned or unformed metal layers are not shown). Embedding thermal expansion stress compensation insert 8 2 in printing

O:\60\60018.ptc 第14頁 ^ ' 4370 1 9 _案號 88114105_生_^_Θ_修正_ 五、發明說明(10) . ^ 電路板層合物的電介層8 4中。雖然該插入物以内層而顯 示,但是以須要通過外層之電接觸至1C44或其他考慮為基 準,可採插入物置在外層8 6中,舉例而言,此插入物是不 變鋼,鉬,不銹鋼或其他金屬,當連同含環氧之電介層合 物而使用時,此金屬具有小於印刷電路板層中介電材料之 熱膨脹係數,較佳小於約9 p p m / °C。將電介層8 4分裂並形 成一個口袋而接受電介層的兩半83,85中之插入物82 ,隨 後將它層合在一起。在此具體實施例中,插入物不是形成 圖型之導電層,且甚至不須是導體,該插入物可能是由其 他材料所達成,例如矽,包括多晶矽,熔凝矽石,碳化 硼,碳化矽,含鋁之陶瓷等。 圖4 A是經安裝在印刷電路板基體3 0上之I C 4 4的簡化頂視 圖。I C是具有長邊4 5和短邊4 7之長方形。虛線5 1代表熱膨 脹補償區域,但是應了解:此區域可能導於I C 4 4之周界, 或甚至位於I C之周界以内。通常熱應力補償區域自經安裝 之I C的邊緣不延伸超過約8 m m,唯此尺寸係根據數種標準 予以選擇,包括I C,印刷電路板令間熱膨脹材料之相對熱 膨脹係數,以及各層材料之剛性和彈性。 圖4 B是具有中間熱膨脹區域5 0和銅區域4 8之一部份經形 成圖型之金屬層46之簡化圖。該金屬層是根據上述圖2B之 金屬層或箔,將它形成圖型而創造痕跡8 8在熱膨脹補償區 域内,經由虛線5 1表示。此等痕跡通常沿著圖4 A中所示之 I C長軸延伸入熱膨脹補償區域中,提供優良熱補償效果。 在熱膨脹補償以外,痕跡可維持長線或分歧,如所示。 圖5是經安裝在印刷電路板94上之第二IC92上所安裝之O: \ 60 \ 60018.ptc Page 14 ^ '4370 1 9 _ Case No. 88114105_ 生 _ ^ _ Θ_ CORRECTION_ V. Description of the invention (10). ^ The dielectric layer 8 of the circuit board laminate. Although the insert is shown on the inner layer, based on the electrical contact to 1C44 or other considerations through the outer layer, the insert can be placed in the outer layer 86. For example, the insert is constant steel, molybdenum, stainless steel Or other metal, when used in conjunction with an epoxy-containing dielectric laminate, this metal has a coefficient of thermal expansion that is less than that of the dielectric material in the printed circuit board layer, preferably less than about 9 ppm / ° C. The dielectric layer 84 is split and formed into a pocket to receive the inserts 82 in the two halves 83, 85 of the dielectric layer, which are then laminated together. In this specific embodiment, the insert does not form a patterned conductive layer, and does not even need to be a conductor. The insert may be achieved by other materials, such as silicon, including polycrystalline silicon, fused silica, boron carbide, and carbonization. Silicon, aluminum-containing ceramics, etc. Fig. 4A is a simplified top view of I C 4 4 mounted on a printed circuit board substrate 30. I C is a rectangle with long sides 4 5 and short sides 4 7. The dotted line 51 represents the thermal expansion compensation area, but it should be understood that this area may lead to the perimeter of IC 4 or even within the perimeter of IC. Usually the thermal stress compensation area does not extend more than about 8 mm from the edge of the installed IC, but the size is selected according to several standards, including the relative thermal expansion coefficient of the thermal expansion material of the IC, printed circuit board, and the rigidity of each layer And elastic. Fig. 4B is a simplified diagram of a metal layer 46 having a pattern formed by a part of the intermediate thermal expansion region 50 and the copper region 48. The metal layer is a metal layer or foil according to the above-mentioned FIG. 2B, and is formed into a pattern to create a trace 8 8 in the thermal expansion compensation area, indicated by a dotted line 51. These traces usually extend into the thermal expansion compensation area along the long axis of IC shown in FIG. 4A, providing excellent thermal compensation effects. In addition to thermal expansion compensation, traces can remain long or divergent, as shown. FIG. 5 shows the second IC 92 mounted on the printed circuit board 94.

O:\60\60018.ptc 第15頁 43701 9 _案號 88114105_年月日__·'' 五、發明說明(11) ' _ 第一 I C 9 0的簡化截面圖。第二I C具有熱膨脹減少插入物 9 6 ,而印刷電路板亦具有熱膨脹減少插入物9 8,第二I C 9 2 中之熱膨服滅少植入物9 6可能是一種熱匹配材料例如鉬, 或熱補償材料例如不變鋼。雖然印刷電路板9 4中之熱膨脹 減少植入物9 8主要減少印刷電路板9 4與第二I C 9 2間之熱膨 脹應力不協調,但是第二I C 9 2中熱膨脹滅少插入物9 6可減 少第二I C中I C晶片(圖中未示)中之熱應力,以及減少第一 I C 9 0與第二I C 9 2間熱膨脹不協調應力。因為不同之操作溫 度或因為兩組件之不同熱膨脹係數,熱膨脹應力不協調可 發生在第一與第二I C之間。 第二I C中之熱膨脹減少插入物9 6,經由添加強度在I C晶 片,或經由維持或負載壓縮中之I C晶片而可減少I C晶片中 之熱應力。舉例而言,如果插入物是不變鋼及將石夕I C晶片 安裝在該不變鋼插入物上,當組合體加熱時,矽晶片將易 於膨膠超過不變鋼。因此,該插入物可保持壓縮中之I C晶 片。如上所述,印刷電路板易於膨脹超過不變鋼或I C,因 此產生抗拉型應力在I C中。經由插入物所提供之壓縮應力 會工作對抗此抗拉應力,且可能使各個應力平衡,以便I C 中之晶片在操作溫度下具有甚少(如有)之熱應力。 另外,第二I C 9 2中之熱膨脹減少插入物9 6可減少第一 IC90與第二IC92間之應力包括缚力。舉例而言,第一 1C可能是陶瓷上或藍寶石上晶薄膜基體。在此實 例中,第一 ic的熱膨脹係於第二ic之熱膨脹係 數,舉例而言,如果第二I d'矽的VLS ί基體。 已完全敘述本發明的各種具體實施例,其他相當或更選O: \ 60 \ 60018.ptc Page 15 43701 9 _ Case No. 88114105_ Year Month Day __ '' V. Description of the invention (11) '_ A simplified sectional view of the first I C 9 0. The second IC has a thermal expansion reduction insert 9 6, and the printed circuit board also has a thermal expansion reduction insert 9 8. The thermal expansion implant 9 6 in the second IC 9 2 may be a heat-matching material such as molybdenum. Or thermal compensation materials such as constant steel. Although the thermal expansion reducing implant 9 8 in the printed circuit board 9 4 mainly reduces the uncoordinated thermal expansion stress between the printed circuit board 9 4 and the second IC 92, the thermal expansion in the second IC 9 2 reduces the insert 9 6 may Reduce the thermal stress in the IC chip (not shown) in the second IC, and reduce the thermal expansion uncoordinated stress between the first IC 90 and the second IC 92. Because of different operating temperatures or because of different thermal expansion coefficients of the two components, thermal expansion stress inconsistencies can occur between the first and second ICs. The thermal expansion reduction insert 96 in the second IC can reduce thermal stress in the IC wafer by adding strength to the IC wafer or by maintaining or loading the IC wafer in compression. For example, if the insert is a constant steel and a Shiba IC chip is mounted on the constant steel insert, when the assembly is heated, the silicon wafer will easily expand beyond the constant steel. Therefore, the insert can hold the IC wafer in compression. As described above, the printed circuit board is prone to expand beyond the constant steel or I C, and thus a tensile-type stress is generated in the I C. The compressive stress provided by the insert will work against this tensile stress and may balance the individual stresses so that the wafer in the IC has little, if any, thermal stress at the operating temperature. In addition, the thermal expansion reducing insert 96 in the second IC 92 can reduce the stress including the binding force between the first IC90 and the second IC92. For example, the first 1C may be a thin film substrate on ceramic or sapphire. In this example, the thermal expansion coefficient of the first IC is the thermal expansion coefficient of the second IC, for example, if the VLS substrate of the second I d 'silicon. Various specific embodiments of the present invention have been fully described, other equivalents or alternatives

O:\60\600IS.ptc 第16頁 卜 43701 9 _案號 88114105_年月日__ 五、發明說明(12) _ 之結構和方法為通常精於該項技藝之人士顯然可見。舉例 而言,雖然各種具體實施例係關於環氧材料的層合層而敘 述,但是應了解:可使用其他材料在層合的一層或數層 中。其他材料可包括金屬層,例如使用於晶片載體和引線 框,玻璃填充之含氟聚合物層以及含礬土之陶瓷層等,只 述及一些,因此之故,本發明之範圍不應受上述之特定具 體實施例所限制而毋寧經由下列申請專利範圍予以限制。O: \ 60 \ 600IS.ptc Page 16 BU 43701 9 _ Case No. 88114105 _ Month and Day __ 5. The structure and method of the invention description (12) _ are clearly visible to those who are usually skilled in the art. For example, although various embodiments have been described with reference to laminated layers of epoxy material, it should be understood that other materials may be used in one or more of the laminated layers. Other materials may include metal layers, such as those used in wafer carriers and lead frames, glass-filled fluoropolymer layers, and alumina-containing ceramic layers, to name just a few. Therefore, the scope of the present invention should not be affected by the above. It is limited by specific specific embodiments but rather by the following patent application scope.

O:\60\60CM8.ptc 第17頁 Γ' 437 0 1 9 _索號 88114105_年月日_修正 圖式簡單說明 第18頁 O:\60\60018.ptcO: \ 60 \ 60CM8.ptc page 17 Γ '437 0 1 9 _ cable number 88114105_year month day_correction Simple explanation of the diagram page 18 O: \ 60 \ 60018.ptc

Claims (1)

4370 1 9 案號.88114105 年 月 修正 Μ': 六'申請專利範圍 1 . 一種多層電路邊 具有一個外表面和f一個内表面之外層,該外表面具有附 著區域以便安裝積體電路在外表面上;及 經層合至外層的内表面上之一導電層,該導電層具有第 一區域(其具有第一熱膨脹係數)及第二區域(其具有第二 熱膨脹係數),第二熱膨脹係數小於第一熱膨脹係數,其 中第二區域相當於附著區域。 2 .如申請專利範圍第1項之多層電路基材,其中導電層 之第一區域包含銅而導電層之第二區域包含具有熱膨脹係 數小於大約9 p p m / °C之金屬。 3. 如申請專利範圍第2項之多層電路基材,其令導電層 之第二區域包含I目或具有大約64%鐵和36%錄之合金。 4. 如申請專利範圍第1項之多層電路基材,其中附著區 域具有長邊和短邊及將導電層形成圖型而形成痕跡,此等 痕跡主要平行於附著區域的長邊而延伸。 5 .如申請專利範圍第1,1真、之多層電路基材,其中將導電 層構型成為接地平面或^_:'平面。 6. —種多層電路基却括: 具有外表面和内泰;、盖'__之以環氧為基之電介材料層合層, 該外表面具有一個附著區域用以安裝積體電路在外表面 上;及 經層合至層合層的内表面上之導電層,該導電層具有包 含銅之第一區域及包含具有第二熱膨脹係數小於大約9 ppm / °C之第二區域,其t第二區域相當於附著區域。4370 1 9 Case No. 88114105 Amendment M ': Six' application patent scope 1. A multilayer circuit edge has an outer surface and an inner surface outer layer, the outer surface has an attachment area for mounting a integrated circuit on the outer surface And a conductive layer laminated on the inner surface of the outer layer, the conductive layer having a first region (which has a first thermal expansion coefficient) and a second region (which has a second thermal expansion coefficient), the second thermal expansion coefficient is less than A coefficient of thermal expansion, where the second region corresponds to the attachment region. 2. The multilayer circuit substrate according to item 1 of the patent application scope, wherein the first region of the conductive layer comprises copper and the second region of the conductive layer comprises a metal having a thermal expansion coefficient of less than about 9 p p m / ° C. 3. For a multilayer circuit substrate according to item 2 of the patent application, the second region of the conductive layer contains I mesh or an alloy with approximately 64% iron and 36% iron. 4. For a multilayer circuit substrate according to item 1 of the patent application scope, wherein the attachment area has long and short sides, and the conductive layer is patterned to form traces, these traces mainly extend parallel to the long sides of the attachment area. 5. The multilayer circuit substrate according to the first and the first patent applications, wherein the conductive layer is configured as a ground plane or a ^ _: 'plane. 6. A multi-layer circuit base includes: an outer surface and an inner surface; an epoxy-based dielectric material laminated layer of a cover '__, the outer surface having an attachment area for mounting integrated circuits outside On the surface; and a conductive layer laminated on the inner surface of the laminated layer, the conductive layer having a first region containing copper and a second region having a second thermal expansion coefficient of less than about 9 ppm / ° C, where t The second area corresponds to the attachment area. O:\60\6OO18.ptc 第19頁 Λ370 1 9 _ 案號 88114105 #;_3_ 修正 六、申請專利範圍 .,_ 7 . —種供使用於電路基材中之多層金屬箔,該箔包括: 包含具有第一厚度之铪的第一部份之箔; 第二部份之箔其中包含具有熱膨脹係數小於大約9 p p m / °C之金屬,第二部份具有第二厚度,該第二厚度基本上等 及 於第一厚度 覆蓋在第一部份和第二部份上之低導電率層,及將第一 部份機械和電耦合至第二部 8 .如申請專利範圍第7項之其中,低導電率層包括 銅而第二部份包括6 4 % 6 %鎳或鉬之合金。 9 .如申請專利範7項,其中箔的總厚度在大約6 與16密耳之間。 1 0. —種積體電路:栝: 具有第一熱膨脹邊^:之半導體晶片; 具有球陣列面和晶片附著面之包裝,將晶片附著面構成 而接納弟二積體電路,將半導體晶片配置在該包裝中’係 在球陣列面與晶片附著面之間;及 經配置在該包裝中之一個熱膨脹減少插入物,係在半導 體晶片附著面之間,該熱膨脹減少插入物具有第三熱膨脹 係數,第二熱膨脹係係小於第一熱膨脹係數。 11.如申請專利範_|pi 〇項之積體電路,其中熱彭脹減 少插入物包含:大約❹、.鐵和36%錄之合金。 1 2 . —種電子组合.括: 一印刷電路基材具具有晶片附著區域之一個表面, 具有第一熱膨服係數之電介層及第一熱膨服減少插入物相 __ΡO: \ 60 \ 6OO18.ptc Page 19 Λ370 1 9 _ Case No. 88114105 #; _3_ Amendment 6. Scope of patent application., _ 7. — A multilayer metal foil for use in circuit substrates, the foil includes: A foil comprising a first part having a thickness of 铪; a foil of a second part comprising a metal having a thermal expansion coefficient of less than about 9 ppm / ° C, and a second part having a second thickness, the second thickness being substantially First-class and low-conductivity layer covering the first part and the second part with the first thickness, and mechanically and electrically coupling the first part to the second part 8 The low-conductivity layer includes copper and the second portion includes an alloy of 64% 6% nickel or molybdenum. 9. As claimed in claim 7, wherein the total thickness of the foil is between about 6 and 16 mils. 1 0. — Kind of integrated circuit: 栝: a semiconductor wafer with a first thermal expansion edge ^ :; a package with a ball array surface and a wafer attachment surface, which is composed of the wafer attachment surface to receive a dipole integrated circuit, and the semiconductor wafer is configured In the package, 'is between the ball array surface and the wafer attachment surface; and a thermal expansion reduction insert configured in the package is between the semiconductor wafer attachment surface, the thermal expansion reduction insert having a third coefficient of thermal expansion The second thermal expansion system is smaller than the first thermal expansion coefficient. 11. The integrated circuit according to the patent application, wherein the thermal expansion reduction insert includes: approximately ❹,., And 36% of the alloy. 1 2. An electronic combination. Including: a printed circuit substrate having a surface with a wafer attachment area, a dielectric layer having a first thermal expansion coefficient and a first thermal expansion reduction insert phase __Ρ O:\60\60018.ptc 第20頁 4370 1 9 _案號 88114105_年月日__ 六、申請專利範圍 _ — 對晶片附著區域,該第一熱膨脹減少插入物具有第二熱膨 脹係數,第二熱膨脹係數小於第一熱膨脹係數; 第一積體電路該第一積體電路係經安裝在晶片附著區域 中印刷電路基材料的表面上,該第一積體電路包括具有第 三熱膨脹係數之半導體晶片及具有第四熱膨脹係數之第二 熱膨脹減少插入物,第四熱膨脹係數係小於第三熱膨脹係 數,及第二晶片附著區域在第一積體電路之表面上;以及 經安裝在第一積體電路的第二晶片附著區域上之第二積 體電路。 1 3 .如申請專利範圍第1 2項之組合體,其中將第一積體 電路安裝在具有球陣列之印刷電路基材上及其中,將第二、 積體電路安裝在具有球陣列之第一積體電路上。O: \ 60 \ 60018.ptc Page 20 4370 1 9 _ Case No. 88114105_Year_Month__ Sixth, the scope of patent application _-For the wafer attachment area, the first thermal expansion reduction insert has a second thermal expansion coefficient, the first The two thermal expansion coefficients are smaller than the first thermal expansion coefficient; the first integrated circuit is mounted on a surface of a printed circuit-based material in a wafer attachment region, and the first integrated circuit includes a semiconductor having a third thermal expansion coefficient A wafer and a second thermal expansion reducing insert having a fourth thermal expansion coefficient, the fourth thermal expansion coefficient is smaller than the third thermal expansion coefficient, and the second wafer attachment area is on the surface of the first integrated circuit; and is mounted on the first integrated circuit A second integrated circuit on the second wafer attachment area of the circuit. 1 3. According to the combination of item 12 in the scope of patent application, wherein the first integrated circuit is mounted on and in a printed circuit substrate having a ball array, and the second and integrated circuits are mounted on a first substrate having a ball array. On an integrated circuit. O:\60\60018.ptc 第21頁O: \ 60 \ 60018.ptc Page 21
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TWI748668B (en) 2020-09-29 2021-12-01 頎邦科技股份有限公司 Layout structure of flexible printed circuit board
TWI784661B (en) * 2021-08-09 2022-11-21 頎邦科技股份有限公司 Layout structure of flexible printed circuit board

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TWI648854B (en) * 2017-06-14 2019-01-21 穩懋半導體股份有限公司 Improved structure for reducing deformation of compound semiconductor wafers

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