TW432718B - Semiconductor device having a capacitor element, and method for making the same - Google Patents
Semiconductor device having a capacitor element, and method for making the same Download PDFInfo
- Publication number
- TW432718B TW432718B TW088120199A TW88120199A TW432718B TW 432718 B TW432718 B TW 432718B TW 088120199 A TW088120199 A TW 088120199A TW 88120199 A TW88120199 A TW 88120199A TW 432718 B TW432718 B TW 432718B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- silicon
- layer
- silicon layer
- oxide film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000003990 capacitor Substances 0.000 title claims description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 63
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000002955 isolation Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 229910052710 silicon Inorganic materials 0.000 claims description 71
- 239000010703 silicon Substances 0.000 claims description 71
- 239000012535 impurity Substances 0.000 claims description 51
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 238000000926 separation method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005468 ion implantation Methods 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 230000002079 cooperative effect Effects 0.000 claims description 6
- 230000003064 anti-oxidating effect Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000010408 film Substances 0.000 description 158
- 239000010410 layer Substances 0.000 description 133
- 238000009792 diffusion process Methods 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 238000009413 insulation Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- OXRMMGBHYZHRMG-UHFFFAOYSA-N [Si].[Ar] Chemical compound [Si].[Ar] OXRMMGBHYZHRMG-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011104 metalized film Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33784898 | 1998-11-27 | ||
| JP36250998 | 1998-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW432718B true TW432718B (en) | 2001-05-01 |
Family
ID=26575930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088120199A TW432718B (en) | 1998-11-27 | 1999-11-19 | Semiconductor device having a capacitor element, and method for making the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100311990B1 (ko) |
| TW (1) | TW432718B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009173A (ja) | 2000-06-26 | 2002-01-11 | Toshiba Corp | 半導体装置の製造方法 |
-
1999
- 1999-11-19 TW TW088120199A patent/TW432718B/zh not_active IP Right Cessation
- 1999-11-26 KR KR1019990052876A patent/KR100311990B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000035711A (ko) | 2000-06-26 |
| KR100311990B1 (ko) | 2001-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |