TW430899B - Method of manufacturing cathode of plasma etching apparatus, and cathode manufactured thereby - Google Patents
Method of manufacturing cathode of plasma etching apparatus, and cathode manufactured therebyInfo
- Publication number
- TW430899B TW430899B TW087116277A TW87116277A TW430899B TW 430899 B TW430899 B TW 430899B TW 087116277 A TW087116277 A TW 087116277A TW 87116277 A TW87116277 A TW 87116277A TW 430899 B TW430899 B TW 430899B
- Authority
- TW
- Taiwan
- Prior art keywords
- cathode
- plasma etching
- etching apparatus
- manufacturing
- silicon substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980002382A KR100265289B1 (ko) | 1998-01-26 | 1998-01-26 | 플라즈마식각장치의 캐소우드 제조방법 및 이에 따라 제조되는 캐소우드 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW430899B true TW430899B (en) | 2001-04-21 |
Family
ID=19532162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087116277A TW430899B (en) | 1998-01-26 | 1998-09-30 | Method of manufacturing cathode of plasma etching apparatus, and cathode manufactured thereby |
Country Status (4)
Country | Link |
---|---|
US (1) | US6150762A (zh) |
JP (1) | JPH11219940A (zh) |
KR (1) | KR100265289B1 (zh) |
TW (1) | TW430899B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100430664B1 (ko) | 1997-10-03 | 2004-06-16 | 가부시끼가이샤 히다치 세이사꾸쇼 | 가스방전형표시장치의제조방법 |
KR100465844B1 (ko) * | 2002-06-03 | 2005-01-13 | 주식회사 티씨케이 | 에칭장비용 캐소드전극의 홀 가공 방법 |
AU2002353591A1 (en) * | 2002-11-09 | 2004-06-03 | Worldex Int | Method and device for polishing plasma chamber cathode holes |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US7618769B2 (en) * | 2004-06-07 | 2009-11-17 | Applied Materials, Inc. | Textured chamber surface |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
KR100710704B1 (ko) * | 2005-03-23 | 2007-04-24 | 주식회사 월덱스 | 플라즈마 챔버 캐소드의 관통구멍 폴리싱 방법과 장치 |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7762114B2 (en) | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
KR100922620B1 (ko) * | 2007-08-24 | 2009-10-21 | 하나실리콘(주) | 플라즈마 처리 장치용 실리콘 소재의 제조 방법 |
KR100918076B1 (ko) * | 2007-08-24 | 2009-09-22 | 하나실리콘(주) | 플라즈마 처리 장치용 실리콘 소재의 제조 방법 |
US9101954B2 (en) | 2013-09-17 | 2015-08-11 | Applied Materials, Inc. | Geometries and patterns for surface texturing to increase deposition retention |
US9406534B2 (en) * | 2014-09-17 | 2016-08-02 | Lam Research Corporation | Wet clean process for cleaning plasma processing chamber components |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3967150A (en) * | 1975-01-31 | 1976-06-29 | Varian Associates | Grid controlled electron source and method of making same |
US4745326A (en) * | 1986-12-10 | 1988-05-17 | The United States Of America As Represented By The Secretary Of The Navy | Method of manufacturing integral shadow gridded controlled porosity, dispenser cathodes |
EP0296348B1 (de) * | 1987-05-27 | 1993-03-31 | Siemens Aktiengesellschaft | Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium |
NL8701530A (nl) * | 1987-06-30 | 1989-01-16 | Stichting Fund Ond Material | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
US5395481A (en) * | 1993-10-18 | 1995-03-07 | Regents Of The University Of California | Method for forming silicon on a glass substrate |
-
1998
- 1998-01-26 KR KR1019980002382A patent/KR100265289B1/ko not_active IP Right Cessation
- 1998-09-24 JP JP10269416A patent/JPH11219940A/ja active Pending
- 1998-09-30 TW TW087116277A patent/TW430899B/zh not_active IP Right Cessation
-
1999
- 1999-01-21 US US09/234,496 patent/US6150762A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6150762A (en) | 2000-11-21 |
KR19990066450A (ko) | 1999-08-16 |
JPH11219940A (ja) | 1999-08-10 |
KR100265289B1 (ko) | 2000-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |