TW429628B - Transistor having substantially isolated body and method of making the same - Google Patents

Transistor having substantially isolated body and method of making the same

Info

Publication number
TW429628B
TW429628B TW088100360A TW88100360A TW429628B TW 429628 B TW429628 B TW 429628B TW 088100360 A TW088100360 A TW 088100360A TW 88100360 A TW88100360 A TW 88100360A TW 429628 B TW429628 B TW 429628B
Authority
TW
Taiwan
Prior art keywords
region
substrate
fet
device region
transistor
Prior art date
Application number
TW088100360A
Other languages
English (en)
Inventor
Louis L Hsu
Jack A Mandelman
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW429628B publication Critical patent/TW429628B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW088100360A 1998-01-15 1999-01-12 Transistor having substantially isolated body and method of making the same TW429628B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/007,908 US6177299B1 (en) 1998-01-15 1998-01-15 Transistor having substantially isolated body and method of making the same

Publications (1)

Publication Number Publication Date
TW429628B true TW429628B (en) 2001-04-11

Family

ID=21728748

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088100360A TW429628B (en) 1998-01-15 1999-01-12 Transistor having substantially isolated body and method of making the same

Country Status (4)

Country Link
US (1) US6177299B1 (zh)
JP (1) JP3309078B2 (zh)
KR (1) KR100323162B1 (zh)
TW (1) TW429628B (zh)

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US7242064B2 (en) * 1999-06-30 2007-07-10 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6372567B1 (en) * 2000-04-20 2002-04-16 Infineon Technologies Ag Control of oxide thickness in vertical transistor structures
US7163864B1 (en) * 2000-10-18 2007-01-16 International Business Machines Corporation Method of fabricating semiconductor side wall fin
GB0101695D0 (en) * 2001-01-23 2001-03-07 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
JP4054557B2 (ja) * 2001-10-10 2008-02-27 沖電気工業株式会社 半導体素子の製造方法
US20040089885A1 (en) * 2002-09-10 2004-05-13 Martin Mark N. Layout techniques for the creation of dense radiation tolerant MOSFETs with small width-length ratios
US6709982B1 (en) 2002-11-26 2004-03-23 Advanced Micro Devices, Inc. Double spacer FinFET formation
US6762448B1 (en) * 2003-04-03 2004-07-13 Advanced Micro Devices, Inc. FinFET device with multiple fin structures
US6964897B2 (en) * 2003-06-09 2005-11-15 International Business Machines Corporation SOI trench capacitor cell incorporating a low-leakage floating body array transistor
US6943405B2 (en) * 2003-07-01 2005-09-13 International Business Machines Corporation Integrated circuit having pairs of parallel complementary FinFETs
US6716686B1 (en) 2003-07-08 2004-04-06 Advanced Micro Devices, Inc. Method for forming channels in a finfet device
US7285466B2 (en) * 2003-08-05 2007-10-23 Samsung Electronics Co., Ltd. Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels
US7498225B1 (en) 2003-12-04 2009-03-03 Advanced Micro Devices, Inc. Systems and methods for forming multiple fin structures using metal-induced-crystallization
KR100594282B1 (ko) * 2004-06-28 2006-06-30 삼성전자주식회사 ＦｉｎＦＥＴ을 포함하는 반도체 소자 및 그 제조방법
JPWO2006006438A1 (ja) * 2004-07-12 2008-04-24 日本電気株式会社 半導体装置及びその製造方法
US7405108B2 (en) 2004-11-20 2008-07-29 International Business Machines Corporation Methods for forming co-planar wafer-scale chip packages
US7491995B2 (en) * 2006-04-04 2009-02-17 Micron Technology, Inc. DRAM with nanofin transistors
US7425491B2 (en) 2006-04-04 2008-09-16 Micron Technology, Inc. Nanowire transistor with surrounding gate
US20070228491A1 (en) * 2006-04-04 2007-10-04 Micron Technology, Inc. Tunneling transistor with sublithographic channel
US8354311B2 (en) * 2006-04-04 2013-01-15 Micron Technology, Inc. Method for forming nanofin transistors
US8734583B2 (en) * 2006-04-04 2014-05-27 Micron Technology, Inc. Grown nanofin transistors
US10189100B2 (en) * 2008-07-29 2019-01-29 Pratt & Whitney Canada Corp. Method for wire electro-discharge machining a part
US8925201B2 (en) * 2009-06-29 2015-01-06 Pratt & Whitney Canada Corp. Method and apparatus for providing rotor discs
KR102550651B1 (ko) 2018-06-22 2023-07-05 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US11450768B2 (en) 2020-10-05 2022-09-20 Sandisk Technologies Llc High voltage field effect transistor with vertical current paths and method of making the same
US11978774B2 (en) 2020-10-05 2024-05-07 Sandisk Technologies Llc High voltage field effect transistor with vertical current paths and method of making the same

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Also Published As

Publication number Publication date
JP3309078B2 (ja) 2002-07-29
KR19990067727A (ko) 1999-08-25
JPH11251579A (ja) 1999-09-17
KR100323162B1 (ko) 2002-02-04
US6177299B1 (en) 2001-01-23

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees