TW428053B - Equipment to pull a mono-crystal - Google Patents

Equipment to pull a mono-crystal

Info

Publication number
TW428053B
TW428053B TW086103588A TW86103588A TW428053B TW 428053 B TW428053 B TW 428053B TW 086103588 A TW086103588 A TW 086103588A TW 86103588 A TW86103588 A TW 86103588A TW 428053 B TW428053 B TW 428053B
Authority
TW
Taiwan
Prior art keywords
pull
crystal
crucible
room
plate
Prior art date
Application number
TW086103588A
Other languages
English (en)
Inventor
Winfried Schulmann
Helmut Kaiser
Franz Thimm
Original Assignee
Leybold Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Ag filed Critical Leybold Ag
Application granted granted Critical
Publication of TW428053B publication Critical patent/TW428053B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW086103588A 1996-04-03 1997-03-21 Equipment to pull a mono-crystal TW428053B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19613282A DE19613282A1 (de) 1996-04-03 1996-04-03 Vorrichtung zum Ziehen von Einkristallen

Publications (1)

Publication Number Publication Date
TW428053B true TW428053B (en) 2001-04-01

Family

ID=7790339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103588A TW428053B (en) 1996-04-03 1997-03-21 Equipment to pull a mono-crystal

Country Status (6)

Country Link
US (1) US5846322A (zh)
EP (1) EP0799913B1 (zh)
JP (1) JPH1067595A (zh)
KR (1) KR100229342B1 (zh)
DE (2) DE19613282A1 (zh)
TW (1) TW428053B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426163B (zh) * 2010-10-08 2014-02-11 Sumitomo Metal Fine Technology Co Ltd Single crystal pulling device and crucible support device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879452A (en) * 1996-01-25 1999-03-09 Ferrofluidics Corporation Czochralski crystal growth system with an independently supported pull head
US5989341A (en) * 1996-02-08 1999-11-23 Sumitomo Sitix Corporation Single crystal producing apparatus and a single crystal producing method using same
DE19709212A1 (de) * 1997-03-06 1998-09-10 Leybold Ag Vorrichtung zur Handhabung schwerer Bauteile einer in einem Traggestell abgestützten Kristallziehmaschine nach dem Czochralski-Verfahren
TW494146B (en) 1997-04-09 2002-07-11 Memc Electronic Materials Spa Process for growing a single crystal silicon ingot
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JP3449729B2 (ja) 1997-04-09 2003-09-22 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンウエハを製造する方法
DE19753477A1 (de) * 1997-12-02 1999-06-10 Wacker Siltronic Halbleitermat Verfahren und Heizvorrichtung zum Aufschmelzen von Halbleitermaterial
DE69901115T2 (de) 1998-06-26 2002-12-19 Memc Electronic Materials, Inc. Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
CN1155074C (zh) 1998-09-02 2004-06-23 Memc电子材料有限公司 从低缺陷密度的单晶硅上制备硅-绝缘体结构
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
CN1296526C (zh) 1998-10-14 2007-01-24 Memc电子材料有限公司 热退火后的低缺陷密度单晶硅
DE69913731T2 (de) 1998-10-14 2004-10-14 Memc Electronic Materials, Inc. Im wesentlichen defektfreie epitaktische siliziumscheiben
DE19857979A1 (de) * 1998-12-16 2000-06-21 Aurion Anlagentechnik Gmbh Vakuumkammer
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
CN100348782C (zh) * 2001-01-26 2007-11-14 Memc电子材料有限公司 具有基本上没有氧化诱生堆垛层错的空位为主的芯的低缺陷密度硅
CN103147122B (zh) 2006-05-19 2016-01-20 Memc电子材料有限公司 控制cz生长过程中由硅单晶侧面诱发的附聚点缺陷和氧簇的形成
DE102015102703B4 (de) 2015-02-25 2020-06-25 Phoenix Contact Gmbh & Co. Kg Geschirmter elektrischer Steckverbinder und Herstellungsverfahren

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1290117B (de) * 1963-03-22 1969-03-06 Siemens Ag Vorrichtung zum tiegellosen Zonenschmelzen eines kristallinen Stabes
US3822111A (en) * 1971-02-25 1974-07-02 Sony Corp Apparatus for pulling up semiconductor crystals
US4301120A (en) * 1980-09-02 1981-11-17 Ferrofluidics Corporation Chain introduction means for a crystal growth pulling head
WO1982004074A1 (en) * 1981-05-19 1982-11-25 Helgeland Walter Apparatus for and method of handling crystals from crystal-growing furnaces
US4350560A (en) * 1981-08-07 1982-09-21 Ferrofluidics Corporation Apparatus for and method of handling crystals from crystal-growing furnaces
US4523972A (en) * 1983-11-28 1985-06-18 At&T Technologies, Inc. Method of and apparatus for handling crystal ingots
JPH01224292A (ja) * 1988-03-03 1989-09-07 Fujitsu Ltd 結晶成長装置
JP2605164B2 (ja) * 1990-05-28 1997-04-30 信越半導体 株式会社 単結晶棒搬出装置及びその搬送方法
DE9215780U1 (de) * 1992-11-20 1993-01-21 Leybold Durferrit GmbH, 5000 Köln Raumtragwerk mit zwei Bedienbühnen, insbesondere für eine Vorrichtung zum Schmelzen, Gießen und/oder Verdüsen von Werkstoffen
DE4329283C2 (de) * 1993-08-31 1997-02-13 Leybold Ag Drehkopf für Kristallziehanlagen für die Durchführung des Czochralski-Prozesses
DE19538857A1 (de) * 1995-10-19 1997-04-24 Leybold Ag Verfahren und Vorrichtung zum Ziehen von Einkristallen aus einer in einem Tiegel befindlichen Schmelze

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426163B (zh) * 2010-10-08 2014-02-11 Sumitomo Metal Fine Technology Co Ltd Single crystal pulling device and crucible support device

Also Published As

Publication number Publication date
JPH1067595A (ja) 1998-03-10
KR970070255A (ko) 1997-11-07
US5846322A (en) 1998-12-08
EP0799913B1 (de) 2002-07-03
KR100229342B1 (ko) 2000-02-01
DE59707622D1 (de) 2002-08-08
EP0799913A1 (de) 1997-10-08
DE19613282A1 (de) 1997-10-09

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees