TW428053B - Equipment to pull a mono-crystal - Google Patents
Equipment to pull a mono-crystalInfo
- Publication number
- TW428053B TW428053B TW086103588A TW86103588A TW428053B TW 428053 B TW428053 B TW 428053B TW 086103588 A TW086103588 A TW 086103588A TW 86103588 A TW86103588 A TW 86103588A TW 428053 B TW428053 B TW 428053B
- Authority
- TW
- Taiwan
- Prior art keywords
- pull
- crystal
- crucible
- room
- plate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/106—Seed pulling including sealing means details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19613282A DE19613282A1 (de) | 1996-04-03 | 1996-04-03 | Vorrichtung zum Ziehen von Einkristallen |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428053B true TW428053B (en) | 2001-04-01 |
Family
ID=7790339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086103588A TW428053B (en) | 1996-04-03 | 1997-03-21 | Equipment to pull a mono-crystal |
Country Status (6)
Country | Link |
---|---|
US (1) | US5846322A (zh) |
EP (1) | EP0799913B1 (zh) |
JP (1) | JPH1067595A (zh) |
KR (1) | KR100229342B1 (zh) |
DE (2) | DE19613282A1 (zh) |
TW (1) | TW428053B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI426163B (zh) * | 2010-10-08 | 2014-02-11 | Sumitomo Metal Fine Technology Co Ltd | Single crystal pulling device and crucible support device |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5879452A (en) * | 1996-01-25 | 1999-03-09 | Ferrofluidics Corporation | Czochralski crystal growth system with an independently supported pull head |
US5989341A (en) * | 1996-02-08 | 1999-11-23 | Sumitomo Sitix Corporation | Single crystal producing apparatus and a single crystal producing method using same |
DE19709212A1 (de) * | 1997-03-06 | 1998-09-10 | Leybold Ag | Vorrichtung zur Handhabung schwerer Bauteile einer in einem Traggestell abgestützten Kristallziehmaschine nach dem Czochralski-Verfahren |
TW494146B (en) | 1997-04-09 | 2002-07-11 | Memc Electronic Materials Spa | Process for growing a single crystal silicon ingot |
US6379642B1 (en) * | 1997-04-09 | 2002-04-30 | Memc Electronic Materials, Inc. | Vacancy dominated, defect-free silicon |
JP3449729B2 (ja) | 1997-04-09 | 2003-09-22 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 単結晶シリコンウエハを製造する方法 |
DE19753477A1 (de) * | 1997-12-02 | 1999-06-10 | Wacker Siltronic Halbleitermat | Verfahren und Heizvorrichtung zum Aufschmelzen von Halbleitermaterial |
DE69901115T2 (de) | 1998-06-26 | 2002-12-19 | Memc Electronic Materials, Inc. | Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser |
CN1155074C (zh) | 1998-09-02 | 2004-06-23 | Memc电子材料有限公司 | 从低缺陷密度的单晶硅上制备硅-绝缘体结构 |
US6312516B2 (en) | 1998-10-14 | 2001-11-06 | Memc Electronic Materials, Inc. | Process for preparing defect free silicon crystals which allows for variability in process conditions |
CN1296526C (zh) | 1998-10-14 | 2007-01-24 | Memc电子材料有限公司 | 热退火后的低缺陷密度单晶硅 |
DE69913731T2 (de) | 1998-10-14 | 2004-10-14 | Memc Electronic Materials, Inc. | Im wesentlichen defektfreie epitaktische siliziumscheiben |
DE19857979A1 (de) * | 1998-12-16 | 2000-06-21 | Aurion Anlagentechnik Gmbh | Vakuumkammer |
US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
CN100348782C (zh) * | 2001-01-26 | 2007-11-14 | Memc电子材料有限公司 | 具有基本上没有氧化诱生堆垛层错的空位为主的芯的低缺陷密度硅 |
CN103147122B (zh) | 2006-05-19 | 2016-01-20 | Memc电子材料有限公司 | 控制cz生长过程中由硅单晶侧面诱发的附聚点缺陷和氧簇的形成 |
DE102015102703B4 (de) | 2015-02-25 | 2020-06-25 | Phoenix Contact Gmbh & Co. Kg | Geschirmter elektrischer Steckverbinder und Herstellungsverfahren |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1290117B (de) * | 1963-03-22 | 1969-03-06 | Siemens Ag | Vorrichtung zum tiegellosen Zonenschmelzen eines kristallinen Stabes |
US3822111A (en) * | 1971-02-25 | 1974-07-02 | Sony Corp | Apparatus for pulling up semiconductor crystals |
US4301120A (en) * | 1980-09-02 | 1981-11-17 | Ferrofluidics Corporation | Chain introduction means for a crystal growth pulling head |
WO1982004074A1 (en) * | 1981-05-19 | 1982-11-25 | Helgeland Walter | Apparatus for and method of handling crystals from crystal-growing furnaces |
US4350560A (en) * | 1981-08-07 | 1982-09-21 | Ferrofluidics Corporation | Apparatus for and method of handling crystals from crystal-growing furnaces |
US4523972A (en) * | 1983-11-28 | 1985-06-18 | At&T Technologies, Inc. | Method of and apparatus for handling crystal ingots |
JPH01224292A (ja) * | 1988-03-03 | 1989-09-07 | Fujitsu Ltd | 結晶成長装置 |
JP2605164B2 (ja) * | 1990-05-28 | 1997-04-30 | 信越半導体 株式会社 | 単結晶棒搬出装置及びその搬送方法 |
DE9215780U1 (de) * | 1992-11-20 | 1993-01-21 | Leybold Durferrit GmbH, 5000 Köln | Raumtragwerk mit zwei Bedienbühnen, insbesondere für eine Vorrichtung zum Schmelzen, Gießen und/oder Verdüsen von Werkstoffen |
DE4329283C2 (de) * | 1993-08-31 | 1997-02-13 | Leybold Ag | Drehkopf für Kristallziehanlagen für die Durchführung des Czochralski-Prozesses |
DE19538857A1 (de) * | 1995-10-19 | 1997-04-24 | Leybold Ag | Verfahren und Vorrichtung zum Ziehen von Einkristallen aus einer in einem Tiegel befindlichen Schmelze |
-
1996
- 1996-04-03 DE DE19613282A patent/DE19613282A1/de not_active Ceased
-
1997
- 1997-01-30 DE DE59707622T patent/DE59707622D1/de not_active Expired - Lifetime
- 1997-01-30 EP EP97101429A patent/EP0799913B1/de not_active Expired - Lifetime
- 1997-03-12 KR KR1019970008192A patent/KR100229342B1/ko not_active IP Right Cessation
- 1997-03-18 US US08/820,273 patent/US5846322A/en not_active Expired - Fee Related
- 1997-03-21 TW TW086103588A patent/TW428053B/zh not_active IP Right Cessation
- 1997-04-03 JP JP9084755A patent/JPH1067595A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI426163B (zh) * | 2010-10-08 | 2014-02-11 | Sumitomo Metal Fine Technology Co Ltd | Single crystal pulling device and crucible support device |
Also Published As
Publication number | Publication date |
---|---|
JPH1067595A (ja) | 1998-03-10 |
KR970070255A (ko) | 1997-11-07 |
US5846322A (en) | 1998-12-08 |
EP0799913B1 (de) | 2002-07-03 |
KR100229342B1 (ko) | 2000-02-01 |
DE59707622D1 (de) | 2002-08-08 |
EP0799913A1 (de) | 1997-10-08 |
DE19613282A1 (de) | 1997-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |