TW414940B - Dual exposure method and device manufacturing method using the same - Google Patents

Dual exposure method and device manufacturing method using the same Download PDF

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Publication number
TW414940B
TW414940B TW087118294A TW87118294A TW414940B TW 414940 B TW414940 B TW 414940B TW 087118294 A TW087118294 A TW 087118294A TW 87118294 A TW87118294 A TW 87118294A TW 414940 B TW414940 B TW 414940B
Authority
TW
Taiwan
Prior art keywords
exposure
same
device manufacturing
dual exposure
exposure method
Prior art date
Application number
TW087118294A
Other languages
English (en)
Inventor
Mitsuro Sugita
Akiyoshi Suzuki
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of TW414940B publication Critical patent/TW414940B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
TW087118294A 1997-11-06 1998-11-03 Dual exposure method and device manufacturing method using the same TW414940B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09304232A JP3101594B2 (ja) 1997-11-06 1997-11-06 露光方法及び露光装置

Publications (1)

Publication Number Publication Date
TW414940B true TW414940B (en) 2000-12-11

Family

ID=17930600

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087118294A TW414940B (en) 1997-11-06 1998-11-03 Dual exposure method and device manufacturing method using the same

Country Status (4)

Country Link
EP (1) EP0915384A3 (zh)
JP (1) JP3101594B2 (zh)
KR (1) KR19990045024A (zh)
TW (1) TW414940B (zh)

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Also Published As

Publication number Publication date
JP3101594B2 (ja) 2000-10-23
EP0915384A2 (en) 1999-05-12
JPH11143085A (ja) 1999-05-28
EP0915384A3 (en) 2000-05-03
KR19990045024A (ko) 1999-06-25

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