TW413876B - Wire bonding method - Google Patents

Wire bonding method Download PDF

Info

Publication number
TW413876B
TW413876B TW088108268A TW88108268A TW413876B TW 413876 B TW413876 B TW 413876B TW 088108268 A TW088108268 A TW 088108268A TW 88108268 A TW88108268 A TW 88108268A TW 413876 B TW413876 B TW 413876B
Authority
TW
Taiwan
Prior art keywords
point
capillary
lead
moving
bonding
Prior art date
Application number
TW088108268A
Other languages
English (en)
Inventor
Shinichi Nishiura
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16052963&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW413876(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Application granted granted Critical
Publication of TW413876B publication Critical patent/TW413876B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

413876 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明U ) [發明所屬之技術領域j 本發明係關於以引線連接第1結合點與第2結合點間 之引線結合方法’特別是有關引線弧形之形成方法。 [習知技術] 半導體裝置之組裝步驟中，如圖3所示，有將安裝於 捧腳框1之半導體晶片2上的墊片2a(第1結合點)與接腳 框1上之接腳la(第2結合點）間以引線3連接之步驟。此 時引線3之引線弧形狀’ 一般稱爲台形弧形。又，作爲此 種引線弧形之形成方法，例如有日本專利公報特開平第4_ ’ 318943號，以及特開平7-176558號。 圖3所示之台彤弧彤，係以圖4所示之步驟形成。如 圖4(a)所不，挾持引線3之夾具(未圖示)係呈打開狀態， 當毛細管4下降將形成於引線前端之球結合至第1結合點 A後，毛細管4邊伸出引線3邊上昇至B點。接著如圖 4(b)所示，將毛細管4水平移動至與第2結合點G相反方 向之C點。一般來說，使毛細管4向第2結合點G之相反 方向移動一事稱爲反向動作。藉此，引線3成爲自Α點到 C點之傾斜形狀，引線3之部分產生彎痕Sa。自此A點到 C點之步驟所伸出之引線3，如圖3所示，成爲頸高度部 31 〇 其次如圖4(c)所示，自毛細管4邊伸出引線3邊上昇 至D點。又，所謂伸出引線，係指藉毛細管4的移動自該 毛細管4的前端送出引線2。之後，如圖4(d)所示，毛細 . ·-----澤—ί 1 • ·// f請4-閱讀背φ·之注意事項再t.本頁) --1¾ 1
本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 2办公釐） 413876 A7 _______B7 五、發明説明（> ) 管4再度水平移動至第2結合點相反方向之E點，亦即進 行反向動作。藉此，引線3成爲自C點到E點之傾斜形狀 ，引線3之部分產生彎痕3b。自此C點到E點所伸出之引 線3，如圖3所示，成爲台形部長度部分32。 其次如圖4(e)所示，毛細管4邊伸出引線3邊上昇至 F點，此時引線3之伸出量如圖3所示爲傾斜部33。之後 ，夾具（未圖不）關閉。當夾具關閉之後’即使毛細管4移 動亦不致進行引線3之伸出。接如圖4(f)、（g)所示，毛細 管4即在圓弧運動及圓弧運動後下降至第2結合點G的位 置，將引線3結合於第2結合點G。 [發明欲解決之問題] 圖4所示之台形弧形之形成步驟中，圖4(b)所示之反 向動作，因係在毛細管4接近第1結合點Α之高度的位置 進行，易有較強的彎痕3a。但是，，圖4(d)所示之反向動作 ，因係在毛細管4離第1結合點A較遠之高度的位置進行 ，故較難有彎痕3a且不安定。因此，由於圖3所示之彎痕 3b的部分較不安定，引線弧形之形狀保力較弱，故彎痕3b 之高度與彎痕3a之高度不一致成爲後部較高或後部較低之 形狀。又，如彎痕3b部分之形狀保持力較弱時，因外部的 加壓而產生引線彎曲。例如，結合至第2結合點G時因毛 細管接觸及超音波振盪之衝擊，以及因引線3的振動，或 在模製時因注入成形材所造成之模製流動等之外力而易產 生引線彎曲。 -^4------ 本紙張尺度適用中國國家標牟（CNS ) Μ規格（210_乂2.97公釐） (請讀背&'之注意事項再Γ"本頁) •裝. Μ濟部智慧財產局員工消費合作社印製 413876 A7 __B7 五、發明説明（、） 本發明之課題，即在提供一能解決台形弧形之問題點 ，形成安定及形狀保持力高的引線弧形之引線結合裝置。 .[解決問題之方法] 爲解決上述問題之第1方法，係以引線連接第1結合 點與第2結合點間之引線結合方法，其特徵在於，具有： 將引線之前；連接於第1結合點之步驟： 其次使毛細管上昇，接著進行使其向第2結合點之相 反方向移動的反向動作之步驟； 至少進行一次下述步驟，使毛細管向第2結合點方向 以斜上方上昇，在更進一步上昇之步驟後，使其向第2結 合點之相反方向移動的反向動作；以及 使毛細管上昇，之後使其向第2結合點之方向移動以 將引線連接於第2結合點之步驟。 爲解決上述問題之第2方法，.係以引線連接第1結合 點與第2結合點間之引線結合方法，其特徵在於，具有： 將引線之前端連接於第1結合點之步驟； 其次使毛細管上昇，接著進行使其向第2結合點之相 反方向移動的反向動作之步驟； 至少進行一次使毛細管向第2結合點方向以斜上方上 昇後，使其向第2結合點之相反方向移動的反向動作之步 驟；以及 使毛細管上昇，之後使其向第2結合點之方向移動以 將引線連接於第2結合點之步驟。 本紙張尺度適用中國國( CNS ) A4規格（210X2.9$公釐） "" 413876 五、發明説明（屮） 經濟部智慧財產局員工消費合作社印製 [實施形態] 以圖1及圖2說明本發明之一實施彤態。又，圖3與 圖4之相同或相當之構件或部分係附以相同之符號加以說 明。本實施形態，係將圖3所示之台形弧形的圖4(c)〜（d) 的步驟變更爲圖1(c)〜（e)。其他的步驟則與圖4之步驟相 同。亦即，圖1(a)、（b)及(f)〜（h)之步驟相當於圖4(a)、（b) 及(e)〜（g)之步驟。 首先，說明與習知相同之圖1(a)、（b)之步驟。如圖 1(a)所示，挾持引線3之夾具(未圖示)係呈打開狀態，在毛 細管下降而將形成於引線前端之球結合於第1結合點A後 ，毛，細管4上昇至B點以伸出引線3。其次，如圖1(b)所 示，進行將毛細管4水平移動至與第2結合點G相反方向 的C點之反向動作。藉此，與習知方式同樣的，引線3之 部分形成彎痕3a。再者，在自A點到C點之步驟中伸出的 引線3，成爲圖1(h)所示之頸部高度部31。 接著進行爲本實施形·態特徵之步驟。如圖1(c)所示，. 毛細管4自C點向第2結合點G之方向邊伸出引線3邊斜 斜地上昇至D1點。之後，如圖1(d)所示，毛細管4邊伸 出引線3邊上昇至D點。藉自此C點到D點之動作所伸出 之引線長度爲台形部長度部分32。然後，如圖1(e)所示， 毛細管4向第2結合點G之相反方向移動，亦即進行反向 動作水平移動至E點。藉自C點到E點的動作，引線3產 生彎痕3b。 本紙張尺度制tils轉準（CNS ) A4· ( 2丨Gxd公着) ~ (請也閱讀背砒之注意亊項再灰1^'·頁) .裝. 訂 線 經濟部智慧財產局員工消費合作社印製 413876 A7 B7 五、發明説明（$ ) ~— 之後’與習知之方式同樣的，如圖1(〇所示，毛細管 4邊伸出引線3邊上至F點’此時引線3之伸出量即係圖 1(h)所不之傾斜部33部分。之後，夾具(未圖示)關閉。當 夾具關閉後’即使毛細管4再移動引線3亦不會伸出。接 .著’如圖1(f)〜（h)所示，毛細管4在圓弧運動中或圓弧運 動後下降至第2結合點G，結合引線3。又，因自F點到 第2結合點G之動作，與本發明的要旨無直接關係，故亦 可進行與揭示於前述習知例相同之動作，當然亦可進行其 他種種動作。 如此般’圖l(e)之反向動作，不僅僅是使毛細管4如 圖4(c)般上昇後進行，而是如圖1(c)、⑷般，使毛細管邊 上昇而向第2結合點G之斜上方移動後進行。因此，產生 較強之彎痕3b，且彎痕3b的位置安定，同時形成形狀保 持力較高之引線弧形。 又’在上述之實施形態中，係使毛細管4自C點向斜 上方上昇至D1點，之後再使其上昇至D點，但亦可如圖 2之2點鎖線所示般，使其自C點向斜上方上昇至D點。. 再者，若台形部長度部分32非常長時，可進行複數次使毛 細管4自C點移動至E點之步驟，而不限於僅進行一次。 [發明效果] 本發明，因係進行：將引線之前端連接於第1結合點 之步驟；其次使毛細管上昇，接著進行使其向第2結合點 之相反方向移動的反向動作之步驟；其次至少進行一次使 扣衣—^_一 —^ 「 討 It H 線 • \ \ Λ. (請it閱讀背'r之注意事項再4^4頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（ΖΙΟΧ2^?公釐^ ~ 413876 經濟部智慈財產局員工消費合作社印製 A7 B7 五、發明説明（ί;) 毛細管向第2結合點方向以斜上方上昇後，再上昇或向第 2結合點方向以斜上方上昇後，使其向第2結合點之相反 方向移動之第1次的反向動作之步驟；以及使毛細管上昇 之後使其向第2結合點之方向移動以將引線連接於第2 結合點之步驟，故能形成安定及形狀保持力高的引線弧形 〇 根據以上之說明，不僅是配線距離較短之短弧形，即 使是在配線距離較長之長弧形中亦能獲得安定之弧形。又 ，因係形成對外部之加壓具較強之彤狀保持力的弧形，能 防止因外部加壓所造之引線彎曲。例如，在對第2結合點 之結合時因毛細管之接觸及超音波的振盪所產生之衝擊、 或引線的振動、或模製時因成形材之注入所造成之模製流 動等之外力，具有較強之衝擊吸收能力，以防止引線彎曲 [圖式之簡單說明] 圖1係顯示本發明之一實施形態，（a)〜⑻係顯示各歩 驟中毛細管移動時之引線形狀的狀態圖。 圖2係顯示毛細管之軌跡的說明圖。 圖3係顯示習知台形弧形之引線弧形的圖。 圖4之(a)〜（g)係顯示形成圖3之台形弧形的毛細管之 軌跡中在各點之引線形狀的狀態圖。 [符號說明] 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） (請先閱讀背&.之注f項再^ί本頁)
413876 A7 B7 五、發明説明（q ) 經濟部智慧財產局員工消費合作社印製 A 第1結合點 G 第2結合點 3 引線 3a、3b、3c 彎痕 4 毛細管 31 頸部高度部 32 台形部長度部分 33 傾斜部 (諸先閱讀背面之注意事項再婊，..、表頁) 裝. 訂 線 本紙張尺度適用中國國家標準（CMS ) A4規格（210X2#7公釐）

Claims (1)

  1. 413876 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範園 1 ·一種引線結合方法，係以引線連接第1結合點與第 2結合點’其特徵在於，具有： 將引線之前端連接於第1結合點之步驟； 其次使毛細管上昇，接著進行使其向第2結合點之相 反方向移動的反向動作之步驟； 至少進行一次下述步驟，使毛細管向第2結合點方向 以斜上方上昇後，再進一步上昇之步驟後，使其向第2結 合點之相反方向移動的反向動作；以及 使毛細管上昇，之後使其向第2結合點之方向移動以 將引線連接於第2結合點之步驟。 2 ·—種引線結合方法，係以引線連接第1結合點與第 2結合點，其特徵在於，具有： 將引線之前端連接於第1結合點之步驟； 其次使毛細管上昇，接著進行使其向第2結合點之相 反方向移動的反向動作之步驟； 至少進行一次使毛細管向第2結合點方向以斜上方上 昇後，使其向第2結合點之相反方向移動的反向動作之步 驟；以及 使毛細管上昇，之後使其向第2結合點之方向移動以 將引線連接於第2結合點之步驟。 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X2们公釐） (請先閱讀背面之注意事項再壤寫本頁) L裝. 訂 線
TW088108268A 1998-06-25 1999-05-20 Wire bonding method TW413876B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17869698A JP3377748B2 (ja) 1998-06-25 1998-06-25 ワイヤボンディング方法

Publications (1)

Publication Number Publication Date
TW413876B true TW413876B (en) 2000-12-01

Family

ID=16052963

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108268A TW413876B (en) 1998-06-25 1999-05-20 Wire bonding method

Country Status (4)

Country Link
US (1) US6315190B1 (zh)
JP (1) JP3377748B2 (zh)
KR (1) KR100300823B1 (zh)
TW (1) TW413876B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108074900A (zh) * 2016-11-15 2018-05-25 先进科技新加坡有限公司 形成三维导线环的方法和使用该方法形成的导线环

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3455092B2 (ja) * 1997-10-27 2003-10-06 株式会社新川 半導体装置及びワイヤボンディング方法
JP2004172477A (ja) * 2002-11-21 2004-06-17 Kaijo Corp ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置
US7227095B2 (en) * 2003-08-06 2007-06-05 Micron Technology, Inc. Wire bonders and methods of wire-bonding
US7464854B2 (en) * 2005-01-25 2008-12-16 Kulicke And Soffa Industries, Inc. Method and apparatus for forming a low profile wire loop
US8016182B2 (en) * 2005-05-10 2011-09-13 Kaijo Corporation Wire loop, semiconductor device having same and wire bonding method
USD753612S1 (en) * 2012-09-07 2016-04-12 Cree, Inc. Light emitter device
JP5686912B1 (ja) * 2014-02-20 2015-03-18 株式会社新川 バンプ形成方法、バンプ形成装置及び半導体装置の製造方法
JP2015043465A (ja) * 2014-12-01 2015-03-05 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
JP6614840B2 (ja) 2015-07-23 2019-12-04 キヤノン株式会社 液体吐出ヘッドおよびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2727352B2 (ja) * 1989-04-17 1998-03-11 株式会社 新川 リード付き半導体素子の製造方法
JPH04273135A (ja) * 1991-02-27 1992-09-29 Shinkawa Ltd ワイヤボンデイング方法
JP3049515B2 (ja) * 1991-06-19 2000-06-05 株式会社新川 ワイヤボンデイング方法
US5111989A (en) * 1991-09-26 1992-05-12 Kulicke And Soffa Investments, Inc. Method of making low profile fine wire interconnections
WO1993023982A1 (en) * 1992-05-11 1993-11-25 Nchip, Inc. Stacked devices for multichip modules
JP2823454B2 (ja) * 1992-12-03 1998-11-11 株式会社東芝 ワイヤボンディング装置
US5291061A (en) * 1993-04-06 1994-03-01 Micron Semiconductor, Inc. Multi-chip stacked devices
US5702049A (en) * 1995-06-07 1997-12-30 West Bond Inc. Angled wire bonding tool and alignment method
US5917242A (en) * 1996-05-20 1999-06-29 Micron Technology, Inc. Combination of semiconductor interconnect
JP3189115B2 (ja) * 1996-12-27 2001-07-16 株式会社新川 半導体装置及びワイヤボンディング方法
JP3333413B2 (ja) * 1996-12-27 2002-10-15 株式会社新川 ワイヤボンディング方法
JP3370539B2 (ja) * 1997-01-13 2003-01-27 株式会社新川 ワイヤボンディング方法
JP3400287B2 (ja) * 1997-03-06 2003-04-28 株式会社新川 ワイヤボンディング方法
JP2000114304A (ja) * 1998-10-08 2000-04-21 Shinkawa Ltd ワイヤボンディング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108074900A (zh) * 2016-11-15 2018-05-25 先进科技新加坡有限公司 形成三维导线环的方法和使用该方法形成的导线环
CN108074900B (zh) * 2016-11-15 2021-01-15 先进科技新加坡有限公司 形成三维导线环的方法和使用该方法形成的导线环

Also Published As

Publication number Publication date
JP2000012596A (ja) 2000-01-14
KR100300823B1 (ko) 2001-11-01
KR20000006346A (ko) 2000-01-25
JP3377748B2 (ja) 2003-02-17
US6315190B1 (en) 2001-11-13

Similar Documents

Publication Publication Date Title
JP3189115B2 (ja) 半導体装置及びワイヤボンディング方法
TW413876B (en) Wire bonding method
TW419763B (en) Wire bonding method
TWI342055B (en) Wire loop, semiconductor device having same and wire bonding method
KR100281435B1 (ko) 반도체장치 및 와이어 본딩방법
TW407327B (en) Wire bonding method
JP3370539B2 (ja) ワイヤボンディング方法
JP2004172477A (ja) ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置
JP3333413B2 (ja) ワイヤボンディング方法
TW510002B (en) Wire bonding method
JPH10256297A (ja) ワイヤボンディング方法
JP3522123B2 (ja) ワイヤボンディング方法
KR20060102495A (ko) 와이어 접속부 형성 방법
JP2007214337A (ja) ワイヤボンディング方法および半導体装置
TW423087B (en) Stacked bottom lead package in semiconductor devices and fabricationg method thereof
JPH02189942A (ja) ワイヤボンディング方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees