TW412065U - Electro-static discharge protection circuit - Google Patents

Electro-static discharge protection circuit

Info

Publication number
TW412065U
TW412065U TW088210908U TW88210908U TW412065U TW 412065 U TW412065 U TW 412065U TW 088210908 U TW088210908 U TW 088210908U TW 88210908 U TW88210908 U TW 88210908U TW 412065 U TW412065 U TW 412065U
Authority
TW
Taiwan
Prior art keywords
electro
protection circuit
discharge protection
static discharge
static
Prior art date
Application number
TW088210908U
Other languages
English (en)
Inventor
Dae-Seong Kim
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Publication of TW412065U publication Critical patent/TW412065U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
TW088210908U 1996-11-20 1997-02-25 Electro-static discharge protection circuit TW412065U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960055668A KR100223888B1 (ko) 1996-11-20 1996-11-20 정전기 보호회로

Publications (1)

Publication Number Publication Date
TW412065U true TW412065U (en) 2000-11-11

Family

ID=19482654

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088210908U TW412065U (en) 1996-11-20 1997-02-25 Electro-static discharge protection circuit

Country Status (4)

Country Link
US (1) US5859758A (zh)
JP (1) JP3566512B2 (zh)
KR (1) KR100223888B1 (zh)
TW (1) TW412065U (zh)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249162B1 (ko) * 1996-12-31 2000-03-15 김영환 정전기(eds)보호회로
KR100423846B1 (ko) * 1997-04-25 2004-05-17 삼성전자주식회사 반도체 장치의 정전기 보호 회로
WO2000028594A1 (en) * 1998-11-09 2000-05-18 Koninklijke Philips Electronics N.V. Over-voltage protection for integrated analog and digital circuits
JP3988914B2 (ja) * 1999-04-28 2007-10-10 株式会社ルネサステクノロジ 静電破壊保護回路を有する半導体集積回路
TW431042B (en) * 1999-05-18 2001-04-21 Sunplus Technology Co Ltd Electrostatic discharge protection apparatus of polydiode
US6400204B1 (en) * 2000-07-26 2002-06-04 Agere Systems Guardian Corp. Input stage ESD protection for an integrated circuit
KR20020085101A (ko) * 2001-05-04 2002-11-16 삼성전자 주식회사 다이오드를 이용한 정전기적 방전으로부터의 보호 회로
US6747501B2 (en) * 2001-07-13 2004-06-08 Industrial Technology Research Institute Dual-triggered electrostatic discharge protection circuit
JP2003072076A (ja) * 2001-08-31 2003-03-12 Canon Inc 記録ヘッド及びその記録ヘッドを用いた記録装置
KR100434063B1 (ko) * 2001-09-11 2004-06-04 엘지전자 주식회사 정전 방전 방지회로
KR20020024065A (ko) * 2002-01-23 2002-03-29 나용균 2극 다이오드의 단 방향 특성 〈p n 접합 성질〉을 이용한전기 전자 기기의 d c 전원 공급 방법.
US6894881B1 (en) * 2002-02-19 2005-05-17 National Semiconductor Corp ESD protection methods and devices using additional terminal in the diode structures
US6933610B2 (en) * 2002-02-20 2005-08-23 Silicon Pipe, Inc. Method of bonding a semiconductor die without an ESD circuit and a separate ESD circuit to an external lead, and a semiconductor device made thereby
DE10255130B4 (de) * 2002-11-26 2007-03-22 Infineon Technologies Ag Schaltungsanordnung zum Schutz integrierter Schaltungen vor elektrostatischen Entladungen mit parallelem Strompfad
US20050225916A1 (en) * 2004-04-02 2005-10-13 Siemens Medical Solutions Usa, Inc. Ultrasound membrane transducer collapse protection system and method
CN100414801C (zh) * 2004-12-10 2008-08-27 上海宏力半导体制造有限公司 静电放电保护装置
KR100793148B1 (ko) * 2006-06-13 2008-01-10 한국과학기술원 차동구조로 된 고주파 회로의 정전기 방지회로
US7990664B1 (en) * 2006-12-14 2011-08-02 Altera Corporation Electrostatic discharge protection in a field programmable gate array
KR100878439B1 (ko) * 2007-08-30 2009-01-13 주식회사 실리콘웍스 출력 드라이버단의 ｅｓｄ 보호 장치
KR101145791B1 (ko) * 2009-07-31 2012-05-16 에스케이하이닉스 주식회사 정전기 보호회로
US8228651B2 (en) 2009-07-31 2012-07-24 Hynix Semiconductor Inc. ESD protection circuit
CN102623530A (zh) * 2011-01-26 2012-08-01 常熟市福莱德连接器科技有限公司 防静电光伏连接器
US20130341071A1 (en) * 2012-06-26 2013-12-26 Carestream Health, Inc. Transparent conductive film
US9438033B2 (en) * 2013-11-19 2016-09-06 Analog Devices, Inc. Apparatus and method for protecting RF and microwave integrated circuits
US10128215B1 (en) 2016-02-16 2018-11-13 Darryl G. Walker Package including a plurality of stacked semiconductor devices having area efficient ESD protection
DE102017125747A1 (de) * 2016-11-04 2018-05-09 Johnson Electric S.A. Elektronischer Schaltkreis, integrierter Schaltkreis und Motoranordnung
JP6631558B2 (ja) 2017-02-28 2020-01-15 株式会社村田製作所 送受信回路
CN112383039A (zh) * 2020-11-13 2021-02-19 珠海格力电器股份有限公司 一种芯片静电防护电路
US20230138324A1 (en) * 2021-11-01 2023-05-04 Mediatek Inc. Package-level esd protection

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7614118A (nl) * 1976-12-20 1978-06-22 Philips Nv Schakeling voor het beschermen van telefoon- lijnen.
US4571656A (en) * 1984-01-13 1986-02-18 Dynatech Computer Power, Inc. Electrical circuit for protection against surge overvoltage of transients
US5412527A (en) * 1993-06-02 1995-05-02 Micrel, Incorporated Electrostatic discharge protection circuit

Also Published As

Publication number Publication date
JPH10163423A (ja) 1998-06-19
KR19980036986A (ko) 1998-08-05
JP3566512B2 (ja) 2004-09-15
US5859758A (en) 1999-01-12
KR100223888B1 (ko) 1999-10-15

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004
MK4K Expiration of patent term of a granted utility model