TW406343B - Method and device for measuring temperature, etc., of machined surface of hard base and hard base for measurement - Google Patents
Method and device for measuring temperature, etc., of machined surface of hard base and hard base for measurement Download PDFInfo
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- TW406343B TW406343B TW87118003A TW87118003A TW406343B TW 406343 B TW406343 B TW 406343B TW 87118003 A TW87118003 A TW 87118003A TW 87118003 A TW87118003 A TW 87118003A TW 406343 B TW406343 B TW 406343B
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Description
406343 五、發明說明(1) f此’以半導體晶圓之研磨步驟為例,其研磨 度測定方法如下: (1) 用放射溫度計將研磨布做定點测定。 (2) 藉由在研磨定盤之冷卻水排出側測定其排水溫度 的變化並加以解析,推測半導體晶圓之溫度。 (3) 埋入熱電偶於研磨定盤表面’藉由此透過研磨布 間接測定半導體晶圓之溫度。 ^ ’關於負荷在研磨面荷重之測定方法,例如在研磨 開始前,將壓力感應器設置在半導體晶圓和夾持裝置之 間,藉由讓夾持裝置及研磨定盤不作動之狀態使夾持裝置 下降以測定荷重。 然而’上述之溫度測定方法,在加工中並不是直接測 定硬質基板的加工面,而係間接測定或推測值。 又’在半導體晶圓之研磨中,可預測其加工面外圍部 和中〜會有溫度差異’此溫度差異對化學作用有很大影 響’有人曾提到不同部位會產生研磨率之差異,但上述之 溫度測定方法無法對上述事實加以確認。 至於研磨荷重’上述測定僅在靜止狀態下進行,一旦 開始研磨’施加於研磨裝置之搖晃、研磨布面之起伏及反 彈等皆為靜止狀態所不能預測。此不能預測之狀態給予加 工面报大的影響,故無法在研磨中實際測定研磨荷重分佈 及分析其影響。 亦即’在研磨和磨削之加工中,研磨布等加工材料與 硬質基板的加工面接觸,而另一邊之反對側則藉由頂圈406343 V. Description of the invention (1) f This example takes the polishing step of a semiconductor wafer as an example. The method for measuring the polishing degree is as follows: (1) A radiation thermometer is used to perform a fixed-point measurement. (2) The temperature of the semiconductor wafer is estimated by measuring and analyzing the change in the drainage temperature on the cooling water discharge side of the polishing platen. (3) A thermocouple is embedded on the surface of the polishing platen, and the temperature of the semiconductor wafer is measured indirectly through the polishing cloth. ^ 'As for the method of measuring the load on the polishing surface, for example, before the polishing is started, a pressure sensor is placed between the semiconductor wafer and the clamping device, and the clamping device and the polishing platen are not moved to make the clamping Hold the device down to determine the load. However, the above-mentioned temperature measurement method does not directly measure the processing surface of the hard substrate during processing, but indirectly measures or estimates the value. Also, in the polishing of semiconductor wafers, it is predicted that there will be a temperature difference between the peripheral part of the processed surface and the center. This temperature difference has a great influence on the chemical action. Some people have mentioned that the polishing rate difference will occur in different parts, but The above-mentioned temperature measurement method cannot confirm the above facts. As for the grinding load ', the above-mentioned measurement is performed only in a stationary state. Once the grinding is started, the shaking, undulations, and rebound of the polishing cloth applied to the grinding device cannot be predicted in a stationary state. This unpredictable state has a great influence on the processing surface, so it is impossible to actually measure the grinding load distribution and analyze its impact during grinding. That is, in the process of grinding and grinding, the processing material such as abrasive cloth is in contact with the processing surface of the hard substrate, and the opposite side of the other side is through the top ring
五、發明說明(2) 406343 — (top Γ 1 ng)夾持,所以直接測定加工面較為困難,即使非 接觸之測定也因硬質基板本身之回轉運動,而不能正確測 出各個部位的狀態。 有鑑於上述問題,本發明係以提供直接測定加工中硬 質基板加工面之狀態,且能測定硬質基板每個部位之硬質 面溫度等的測定方法,裝置及測定用硬質基 敬馬目的。 申請專利範圍第1項之發明係由礒 狀態之感應器和記錄該感應器訊息。硬質基板加工面 板的一部份。 °錄襄置形成硬質基 在申請專利範圍第2項之發明中, 面狀態之感應器設置在該硬質基板之〜场^知硬質基板加工 之非加工面設置與感應器相連的電路,部份,在硬質基板 質基板外用以記錄前述感應器訊息之記=其能和配置於硬 溫度測定用之熱電動勢感應器以及蜊a二裝置相連。前述 採用壓電型半導體。又,由於與前述^荷重用之感應器可 印刷於非加工面背面,故能防止凹凸影應器相連接之電路 申請專利範圍第4項之發明中,哽4響其加工面。 上,設置隨溫度改變而變色之變色構 基板之非加工面 用變色塗料及變色標籤等變色介質。 。此變色構件可採 申請專利範圍第7項之發明中,在 之加工面時,測定其溫度及壓力之狀熊磨加工硬質基板 前述加工面狀態之感應器、和從該感^使用具備感知 達裝置的測定用硬質基板,並採用=器中取出訊息之傳 別又用硬質基板進行吾V. Description of the invention (2) 406343 — (top Γ 1 ng), it is difficult to directly measure the processing surface. Even non-contact measurement can not accurately measure the state of each part because of the rotary motion of the rigid substrate itself. In view of the above-mentioned problems, the present invention aims to provide a measuring method, an apparatus, and a hard base for measuring the state of a hard substrate processing surface directly during processing and capable of measuring the temperature of the hard surface of each part of the hard substrate. The invention of item 1 of the scope of patent application consists of a sensor in the 礒 state and recording the information of the sensor. Part of a rigid substrate processing panel. In the invention of item 2 of the scope of the patent application, the surface state sensor is set in the field of the hard substrate. The non-processed surface of the hard substrate processing is provided with a circuit connected to the sensor. The record for recording the above-mentioned sensor information outside the hard substrate is that it can be connected to the thermo-electromotive force sensor and the clam a device arranged for the hard temperature measurement. The foregoing uses a piezoelectric type semiconductor. In addition, since the sensor used for the aforementioned load can be printed on the back surface of the non-processed surface, the circuit that can prevent the concave-convex shadower from being connected to the invention in item 4 of the scope of patent application sounds the processed surface. A color-changing medium such as a color-changing coating and a color-changing label is used for the non-processed surface of the substrate. . This color-changing member can adopt the invention in item 7 of the scope of patent application. When processing the surface, the temperature and pressure are measured. The sensor for the aforementioned processing surface of the hard substrate is grinded and the sensor is used. The device uses a hard substrate for the measurement, and uses the hard substrate to carry out the transmission of the message.
五、發明說明(3) 40ΜΙ3 -— 人希望之加工方法實際加工,測定前述加工面之狀態。 申請專利範圍第8項之發明係在硬質基板之非加工面 上配置隨溫度變化而變色之變色構件,用以測定該硬質基 板加工面溫度之方法。將該變色構件之變色溫度設成多階 段’並將前述硬質基板以吾人希望之加工方法來加工。 申請專利範圍第9項之發明係將硬質基板藉由夾持裝 置夾持加工時’將壓力感應薄板設置在硬質基板及夾持裝 置之間,並對前述硬質基板加工。 申請專利範圍第1 〇項之發明係由:具有測定加工面狀 態之測定裝置之硬質基板;處理硬質基板之測定訊息之訊 息處理裝置;將前述測定裝置及/或訊息處理裝置裝著在 加工裝置之裝著機構所構成。 申請專利範圍第11項之發明係由:鄰近硬質基板加工 面埋设在硬質基板前端之熱電偶;與該熱電偶相連接之配 線;及藉由該配線與前述熱電偶相連接之記錄裝置所構 成。將該記錄裝置固定在加工裝置之硬質基板夾持機構, 藉由固定前述硬質基板及前述記錄裝置可防止對加工面影 響’將上述固定裝置設置在前述硬質基板夾持機構内。’ 本發明其係一種硬質基板,該基板裝設在吾人希望之 加工裝置,並在加工硬質基板時測定加工面狀態。事先將 對硬質基板内能感知測疋對象的感應器,以及能取出感應 器所測定結果的裝置安裝在硬質基板 '加工裝置、或其外 部’接著進行和一般硬質基板相同條件之加工。 首先’具備此感應器之硬質基板係在硬質基板之預定 第6頁 五、發明說明(4) 部份埋入感應器,並設置 息取出裝置。訊息採取裝 應器相連接,並通過加工 於外部之訊息處理裝置。 記憶元件或者變色媒質之 接著,將此硬質基板 訊息處理裝置相連接。訊 錄裝置,並直接安裝在加 線和記錄裝置的重量不致 之測定結果。 圖示說明 第1圖為顯示實施例1 圖。 第2圖為實施例1中使 立體圖。 第3圖為顯示實施例2 大側面剖視圖。 第4圖為顯示實施例3 之立體圖。 第5圖為實施例4中適 之立體分解圖。 第6圖為顯示實施例5 體圖。 符號說明 能從此感應器中取出測 置上設有配線。該配線 面背面,以便將訊息傳 或者於硬質基板之非加 記憶裝置。 安裝在加工裝置,同時 息處理裝置使用能儲存 工裝置上,以便在加工 於對加工造成影響,而 用之測定用硬質基板之 中測定用硬質基板構造 定值之訊 直接和感 送至設置 工面形成 將配線和 訊息的記 中這些配 得到正確 之測定裝置的主要構造之示意 部份破斷 之部份放 中測定所使用之測定用硬質基板 用於荷重測定方法之加工裝置等 中測定用硬質基板之部份破斷立V. Description of the invention (3) 40ΜΙ3-The desired processing method is actually processed, and the state of the aforementioned processed surface is measured. The invention in the eighth aspect of the patent application is a method for disposing a color-changing member that changes color with temperature on a non-processed surface of a rigid substrate, and is used to measure the temperature of the processed surface of the rigid substrate. The discoloration temperature of the discoloration member is set to multi-stage ', and the aforementioned hard substrate is processed by a processing method that we desire. The invention in the ninth scope of the patent application is that when a hard substrate is clamped by a clamping device, a pressure sensitive sheet is placed between the rigid substrate and the clamping device, and the aforementioned hard substrate is processed. The invention of item 10 in the scope of the patent application consists of: a hard substrate having a measuring device for measuring the state of the processing surface; an information processing device for processing measurement information of the hard substrate; It is made up of an organization. The invention of item 11 in the scope of patent application is composed of: a thermocouple embedded near the hard substrate processing surface at the front end of the hard substrate; wiring connected to the thermocouple; and a recording device connected to the aforementioned thermocouple through the wiring . The recording device is fixed to a hard substrate holding mechanism of a processing device, and the hard substrate and the recording device are fixed to prevent influence on the processing surface. The fixing device is provided in the hard substrate holding mechanism. The present invention relates to a rigid substrate, which is installed in a processing device that we desire, and the state of the processed surface is measured when the rigid substrate is processed. A sensor capable of sensing a radon object in a hard substrate and a device capable of taking out a measurement result of the sensor are mounted on a hard substrate 'processing device or an external part thereof' in advance, and then processed under the same conditions as a general hard substrate. First of all, the hard substrate provided with the sensor is planned for the hard substrate. Page 6 V. Description of the invention (4) The sensor is partially embedded, and an information extraction device is provided. The message is connected by a processor and passed through an external message processing device. The memory element or the color-changing medium is then connected to the hard substrate information processing device. The weight of the recording device is directly installed on the extension cable and the recording device does not cause the weight measurement result. The first figure is a diagram showing the first embodiment. Fig. 2 is a perspective view of the first embodiment. FIG. 3 is a cross-sectional view showing a large side of Embodiment 2. FIG. Fig. 4 is a perspective view showing a third embodiment. FIG. 5 is an exploded perspective view suitable for Embodiment 4. FIG. Fig. 6 is a block diagram showing Example 5. Explanation of symbols The wiring can be installed on the measurement device from this sensor. The wiring surface is on the back to transmit information to non-memory devices on a rigid substrate. It is installed on the processing device, and the processing device uses a storage device, so that when the processing affects the processing, the measurement rigid substrate structure measurement value is directly and sent to the setting surface. Schematic diagrams showing the main structure of the correct measurement device, including the wiring and information, are formed. Partially broken parts are placed in the measurement. The rigid substrate for measurement is used in the processing device for load measurement methods. Part of the substrate is broken
五、發明說明(5)4 U⑽4 3 。 1測定用晶圓、11熱感應器、1 2配線' 1 3導線、2記 錄裝置、3襯墊、4夾板、5平衡裝置、6頂圈' 1 a測定用晶 圓、11 a感應器、2 a記憶電路、1 b測定用硬質基板、丨1 b壓 電元件、1 2b配線、1 3b導線' 1 c壓力感應薄板、丨〇 c硬質 基板、11 c縱配線、1 2 c橫配線、1 d測定用硬質基板、1 〇 d 變色塗料層、lid〜15d變色塗料 實施例 以下依據圖面對本發明之各實施例加以說明。 實施例1 第1圖為顯示實施例1之測定裝置的主要構造之示竟 圖。第2圖為實施例1中使用之測定用硬質基板之部份破斷 立體圖。 本實施例為將硬質基板之半導體晶圓藉由單片式之研 磨裝置研磨,在加工裝置測定之方法做為例子。 如第1圖所示,本實施例之主要構造由一般研磨裝置 的頂圈6、藉由頂圈6來夾持研磨之測定用晶圓丨、抵接於 測定用晶圓1背面的襯墊3、夾持裝著於襯墊3之測定用晶 圓1的夾板4(tempute)、固定在頂圈6之記錄裝置2、及對 應此記錄裝置2重量的平衡裝置5所構成。 如圖所不’測定用晶圓j與平常研磨之晶圓相同形 之配^面?入複數之熱感應器11,和此熱感應器11相連 測定:曰1糟由先平版印刷術等印刷來形成,此配線12在 置2相、二 端部集中’並藉由導線13與上述之記錄裝 。且’此配線12之印刷面藉由樹脂(未圖示)保V. Description of the invention (5) 4 U⑽4 3. 1 wafer for measurement, 11 thermal sensor, 1 2 wiring '1 3 wires, 2 recording device, 3 pads, 4 splint, 5 balancing device, 6 top ring' 1 a wafer for measurement, 11 a sensor, 2 a memory circuit, 1 b rigid substrate for measurement, 1 b piezoelectric element, 1 2 b wiring, 1 3 b wire '1 c pressure sensing sheet, 丨 c hard substrate, 11 c vertical wiring, 1 2 c horizontal wiring, Examples of 1 d hard substrate for measurement, 10 d color-changing coating layer, and lid ~ 15d color-changing coating Examples Hereinafter, each embodiment of the present invention will be described with reference to the drawings. Example 1 FIG. 1 is a diagram showing a main structure of a measuring device of Example 1. FIG. Fig. 2 is a partially broken perspective view of the measurement hard substrate used in Example 1. This embodiment is an example in which a semiconductor wafer of a hard substrate is polished by a single-piece grinding device and measured in a processing device. As shown in FIG. 1, the main structure of this embodiment is a top ring 6 of a general polishing device, a measurement wafer polished by the top ring 6, and a pad abutting the back of the measurement wafer 1. 3. A clamp 4 (tempute) holding the measurement wafer 1 mounted on the pad 3, a recording device 2 fixed to the top ring 6, and a balancing device 5 corresponding to the weight of the recording device 2. As shown in the figure, the measuring wafer j has the same shape as the wafer that is usually ground. A plurality of thermal sensors 11 are connected to the thermal sensor 11 to measure: 1 is formed by printing such as lithography, and the wiring 12 is concentrated at 2 phases and two ends, and is connected to the above by a wire 13 The record pack. Moreover, the printed surface of this wiring 12 is protected by resin (not shown).
406343 五、發明說明(6) 護,能防止由荷重集中造成 L Λ <斷線及具有防水作用。 本測定裝置之測定方式传 "讲麻。m+ 係以和一般研磨相同之條件進 仃研磨。在此研磨加工中,刼 ^ Η骆钏宏钍婁俏、笨β且*…、感應器1 1經由配線1 2、導線 傳長時間記錄裝置2中儲存。研磨後, 將此記錄裝置2取出,並將此1自1 λ φ卄所谮佼 一、冷,_ & 行此訊息送入專用之解析裝置(未 圖不)進行解析。 —^,熱感應器11係、採用熱電偶形式之感應器,埋入測 定用晶圓1背面僅留下研磨磨除量之厚度挖好之孔中,或 安裝於貫穿測定用晶ΒΠ之孔中,此等安排隨測定之目 的、磨除量及磨粒種類等加以選擇。 又’配線係印刷在上述測定用晶圓1之背面,故不會 由研磨荷重之壓力造成影響。但不限於此方式,例如使用 露出在aa圓外側之配線’為了不受到此配線凹凸的影響, 可使用柔軟之襯墊。此襯墊可使用例如具有壓縮率3〇 %以 上充分厚度之矽橡膠。 實施例2 第3圖為顯示實施例2之測定用硬質基板構造之部份放 大側面剖視圖。 本實施例係無需實施例1之配線及相連於固定在外部 之記錄裝置2之測定用晶圓。 亦即,本實施例之測定用晶圓1 a中,在其内部埋入感 應器11 ’在測定用晶圓1 a内形成與每個感應器丨丨a相鄰接 之記憶電路2 a。 因此’此測定用晶圓1 a其内部具有訊息儲存裝置,因406343 V. Description of the invention (6) Protection can prevent L Λ < disconnection caused by load concentration and waterproof effect. The measurement method of this measuring device is "quoted." m + is ground under the same conditions as normal grinding. In this grinding process, Η Η, 钏, 钏, 钍, 钍, 俏, 俏, 笨, 笨, and…, the sensor 11 is stored in the long-term recording device 2 through the wiring 1, and the wire is transmitted. After grinding, take out this recording device 2 and take this 1 out of 1 λ φ 谮, cold, _ & This message is sent to a dedicated analysis device (not shown) for analysis. — ^, The thermal sensor 11 is a sensor in the form of a thermocouple, which is buried in a hole dug to the back of the wafer 1 for measurement, leaving only a grinding and polishing amount, or installed in a hole penetrating the crystal BΠ for measurement. These arrangements are selected according to the purpose of the measurement, the amount of abrasion and the type of abrasive particles. Since the wiring is printed on the back surface of the wafer 1 for measurement, it is not affected by the pressure of the polishing load. However, it is not limited to this method. For example, a wiring exposed on the outside of the aa circle is used. In order not to be affected by the unevenness of the wiring, a soft pad may be used. As the pad, for example, a silicone rubber having a sufficient thickness of 30% or more can be used. Example 2 FIG. 3 is a partially enlarged side cross-sectional view showing the structure of the rigid substrate for measurement in Example 2. FIG. This embodiment does not require the wiring of Embodiment 1 and the measurement wafer connected to the recording device 2 fixed to the outside. That is, in the measurement wafer 1a of this embodiment, a sensor 11 'is embedded in the measurement wafer 1a to form a memory circuit 2a adjacent to each sensor 丨 a in the measurement wafer 1a. Therefore, 'the measurement wafer 1 a has an information storage device therein, because
-4^-6343 五、發明說明(7) ^外觀上與-般晶圓略同,所以無需要合於測 定。藉由例如間歇式加工裝置能同時加工其他曰圓〜叹 在加工後使用專用之解析裝置(未圖㈤,=各記 路2a中取出訊息並加以解析。 ."电 實施例3 在本實施例3中,目的係測定在平面磨削及研磨中, 負荷在此加工面上之荷重分佈。 第4圖為顯示使用於實施例3之測定用 定用硬質基板之立體圖。 列 工圖:實施例3之測定用硬質基板1b的非加-4 ^ -6343 V. Description of the invention (7) ^ Appearance is slightly the same as-wafer, so there is no need to combine it with the measurement. For example, an intermittent processing device can process other circles at the same time. A dedicated analysis device (not shown in the figure, = each path 2a is taken and analyzed after processing). &Quot; Electrical Example 3 In this implementation, In Example 3, the purpose is to measure the load distribution of the load on the working surface during surface grinding and polishing. Figure 4 is a perspective view showing a rigid hard substrate for measurement used in Example 3. Process drawing: Implementation Non-addition of the hard substrate 1b for measurement in Example 3
Si::, f 之壓電型半導體的複數壓電元件成 ?子狀排列’與配線12b相連接’和上述實施⑴相同進行 從此壓電70件11 b取出荷重訊息與儲存訊息之動作。 實施例4 例4為測定負荷在和上述實施例3相同之加工面 何重分佈的測定方法。 第5圖為實施例4之荷重測定方法的加 立體圖。 # π 如第5圖所示’在本實施例中,使用感知荷重之壓力 $ H fe 1 e itb Μ力感應薄板丨c係由縱配線】】c及橫配線 12c形成之格子狀所構成,能感知在由各配線交差點之壓 力變化所造成之電壓變化。 使用此壓力感應薄板1 c來測定荷重時,做成斑加工硬 質基板10c略同之形狀,並設置在夾持硬質基板i〇c之失持The multiple piezoelectric elements of the piezo-type semiconductor of Si ::, f are arranged in a sub-shape "connected to the wiring 12b" in the same manner as described above, and the load information is retrieved and stored from the piezoelectric 70 element 11b. Example 4 Example 4 is a method for measuring the redistribution of load on the same machined surface as in Example 3 above. Fig. 5 is a perspective view of the load measurement method of Example 4. Figs. # π As shown in FIG. 5 'In this embodiment, the pressure sensing force of the load $ H fe 1 e itb Μ force sensing sheet 丨 c is composed of a vertical wiring]] c and a grid formed by the horizontal wiring 12 c, It can sense the voltage change caused by the pressure change at the intersection of each wiring. When using this pressure-sensitive sheet 1 c to measure the load, the spot-processed hard substrate 10 c is made to have the same shape, and it is set to hold the hard substrate i 0c.
第10頁 40G343 -- ----- 五、發明說明(8) 裝置3 c之間,和上述實施例相同進行荷重訊息之取出和儲 存動作。 實施例5 在上述各實施例中,將溫度或壓力轉換成電氣信號, 用記錄裝置記憶並加以解析訊息,在本實施例5中藉由產 生壓力或溫度變化之介質來測定加工面的狀態。 第6圖為顯示實施例5之測定用硬質基板之部份破斷立 體圖。 如第6圖所示之本實施例5之測定用硬質基板中,在此 非加工面背面塗布因溫度變化而變色之變色塗料層丨〇d。 在此變色塗料層l〇d上面’將變色溫度不同之變色塗料 11〜1 5 d以帶狀間隔塗布,且使之交差,在格子狀裡露出各 變色塗料ll~15d塗布面。 因此,隨著此變色塗料層丨〇 d因溫度上昇而能產生5階 段之變色。同時,能解析出變色塗料層1〇d全體溫度變化 之分佈。 又,使用此變色介質測定基板裡面之變化時,因為是 間接測定所以上述各實施例中其測定精度不高,也能不需 配,及記錄裝置將構造簡單化。料此溫度變色之溫度測 定中,也能利用溫度變色標籤等其他介質。 且,J上述實施例中測定對象為測定在研磨及磨削加 荷重分佈’但不限於此條件,磨粒之PH值及 流速或磨除量之要件也能測定。 本發明因有如以上之構造,故有以下所示之良好效Page 10 40G343 ------- V. Description of the invention (8) Between devices 3c, load information is retrieved and stored in the same manner as in the above embodiment. Embodiment 5 In each of the above embodiments, the temperature or pressure is converted into an electrical signal, and the information is memorized and analyzed by a recording device. In this embodiment 5, the state of the working surface is measured by a medium that generates a pressure or temperature change. Fig. 6 is a perspective view showing a partially broken rigid substrate for measurement in Example 5. As shown in Fig. 6, in the hard substrate for measurement of Example 5 shown in this figure, a non-processed surface is coated with a color-changing coating layer that changes color due to temperature change. On the top of the color-changing coating layer 10d, the color-changing coatings 11 to 15 d having different color-changing temperatures are applied at intervals of a stripe shape and intersected to expose the coating surfaces of the color-changing coatings 11 to 15d in a grid pattern. Therefore, with this temperature change, the color change of the coating layer can occur in 5 stages due to the temperature rise. At the same time, the distribution of the temperature change of the entire color-changing coating layer 10d can be analyzed. In addition, when the change in the substrate is measured using this discoloring medium, since the measurement is indirect, the measurement accuracy in each of the above embodiments is not high, and no configuration is required, and the structure of the recording device is simplified. It is expected that in the temperature measurement of temperature discoloration, other media such as temperature discoloration labels can also be used. In addition, the measurement object in the above-mentioned embodiment is to measure the load distribution during grinding and grinding ', but it is not limited to this condition, and the PH value of the abrasive grains, the flow rate, and the amount of removal can also be measured. Since the present invention has the structure as above, it has the following good effects
I圓 ill 第11頁 (π\ 五、發明說明(9) 果: 1為係直接測定,所以能得到正破值。 同條件 上 進行,所4、了測定而做的加工,因為是以實際加 (3 Ί ιϊΓ能將解析資料大量地反映在實際加』 由改善或利為田在夂硬質基板各部位能得到其測定值,所以藉 法。]用“位之變化’能開發更高精度之加工方 (4 )藉由使用測 置,在-般加工條杜η /基板無需特別之加工裝 紅加工條件下也能進行測定。 〇 )具有將測定結果 硬質基板,因任何加工條在硬質/板内裝置之測定用 中,妒* 條件都能使用’故例如μ私斗、a τ 二;硬質基板同時加工以進行“ (6 )使用變色介晳 』叫疋。 質此廉價製造測定用硬質基板。I circle ill Page 11 (π \ V. Description of the invention (9) Results: 1 is the direct measurement, so you can get a positive break value. It is performed on the same conditions, so 4. The processing is based on the actual measurement. Adding (3 Ί ϊ ϊΓ can reflect a large amount of analytical data in the actual addition. ”Improved or profitable fields can get their measured values at various parts of the hard substrate, so the method is borrowed.] Using" changes in bits "can develop higher accuracy The processing side (4) can be measured under normal processing conditions without using special processing and red processing conditions by using a measuring device. 〇) It has a rigid substrate for measuring results, because any processing strip is hard / In the measurement of the device inside the board, the jealousy * conditions can be used. Therefore, for example, μ private bucket and a τ 2; simultaneous processing of a hard substrate to perform "(6) use of color change and clarity" is called 疋. This is an inexpensive manufacturing measurement Hard substrate.
第12頁Page 12
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JP31700797A JP3939410B2 (en) | 1997-11-18 | 1997-11-18 | Method for measuring processing surface temperature etc. of hard substrate, measuring device thereof, and hard substrate for measurement thereof |
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WO2001090710A1 (en) * | 2000-05-25 | 2001-11-29 | Kamel Fauzi Razali | Thermocouple passing through encapsulant of integrated circuit |
JP2003106883A (en) * | 2001-09-28 | 2003-04-09 | Yamatake Corp | Airflow sensor |
JP4429692B2 (en) * | 2002-11-28 | 2010-03-10 | 古河電気工業株式会社 | Adhesive tape for protecting semiconductor wafer and method for producing semiconductor wafer using the same |
US7151366B2 (en) * | 2002-12-03 | 2006-12-19 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
JP4854237B2 (en) | 2004-10-22 | 2012-01-18 | 日産自動車株式会社 | Solid oxide fuel cell and stack structure |
WO2006067971A2 (en) * | 2004-12-21 | 2006-06-29 | Nissan Motor Co., Ltd. | Startup method for fuel cell stack structure, temperature control method for fuel cell stack structure, and fuel cell stack structure |
US7246570B2 (en) | 2005-02-03 | 2007-07-24 | General Electric Company | Indication film for temperature and temperature distribution measurement and related method |
JP2014069261A (en) * | 2012-09-28 | 2014-04-21 | Disco Abrasive Syst Ltd | Polishing device |
JP7258532B2 (en) * | 2018-12-11 | 2023-04-17 | 株式会社ディスコ | work piece unit |
JP6979607B2 (en) * | 2020-01-24 | 2021-12-15 | 株式会社東京精密 | Grinding device and grinding method |
JP6979608B2 (en) * | 2020-01-24 | 2021-12-15 | 株式会社東京精密 | Grinding device and grinding method |
-
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