TW406343B - Method and device for measuring temperature, etc., of machined surface of hard base and hard base for measurement - Google Patents

Abstract

Provide a method and a device for measuring the temperature, etc., of the processing surface of a hard base, for the purpose of directly measuring the conditions of the processing surface of the hard base being processed for measuring. Bury a plurality of thermal sensor 11 in each place of the back side of the wafer 1 for measuring which has the same shape as the wafer for polishing. Connect the wiring 12 with the thermal sensor 11 and print it at the backside of the wafer 1 for measuring through the optical planar printing. Concentrate the wiring 12 to measure the tip portion of the wafer 1, and connect with the recording apparatus 2 through lead 13. Polish with the same polishing condition as usual and measure the temperature of the polishing facet.

Description

406343 V. Description of the invention (1) f This example takes the polishing step of a semiconductor wafer as an example. The method for measuring the polishing degree is as follows: (1) A radiation thermometer is used to perform a fixed-point measurement. (2) The temperature of the semiconductor wafer is estimated by measuring and analyzing the change in the drainage temperature on the cooling water discharge side of the polishing platen. (3) A thermocouple is embedded on the surface of the polishing platen, and the temperature of the semiconductor wafer is measured indirectly through the polishing cloth. ^ 'As for the method of measuring the load on the polishing surface, for example, before the polishing is started, a pressure sensor is placed between the semiconductor wafer and the clamping device, and the clamping device and the polishing platen are not moved to make the clamping Hold the device down to determine the load. However, the above-mentioned temperature measurement method does not directly measure the processing surface of the hard substrate during processing, but indirectly measures or estimates the value. Also, in the polishing of semiconductor wafers, it is predicted that there will be a temperature difference between the peripheral part of the processed surface and the center. This temperature difference has a great influence on the chemical action. Some people have mentioned that the polishing rate difference will occur in different parts, but The above-mentioned temperature measurement method cannot confirm the above facts. As for the grinding load ', the above-mentioned measurement is performed only in a stationary state. Once the grinding is started, the shaking, undulations, and rebound of the polishing cloth applied to the grinding device cannot be predicted in a stationary state. This unpredictable state has a great influence on the processing surface, so it is impossible to actually measure the grinding load distribution and analyze its impact during grinding. That is, in the process of grinding and grinding, the processing material such as abrasive cloth is in contact with the processing surface of the hard substrate, and the opposite side of the other side is through the top ring

V. Description of the invention (2) 406343 — (top Γ 1 ng), it is difficult to directly measure the processing surface. Even non-contact measurement can not accurately measure the state of each part because of the rotary motion of the rigid substrate itself. In view of the above-mentioned problems, the present invention aims to provide a measuring method, an apparatus, and a hard base for measuring the state of a hard substrate processing surface directly during processing and capable of measuring the temperature of the hard surface of each part of the hard substrate. The invention of item 1 of the scope of patent application consists of a sensor in the 礒 state and recording the information of the sensor. Part of a rigid substrate processing panel. In the invention of item 2 of the scope of the patent application, the surface state sensor is set in the field of the hard substrate. The non-processed surface of the hard substrate processing is provided with a circuit connected to the sensor. The record for recording the above-mentioned sensor information outside the hard substrate is that it can be connected to the thermo-electromotive force sensor and the clam a device arranged for the hard temperature measurement. The foregoing uses a piezoelectric type semiconductor. In addition, since the sensor used for the aforementioned load can be printed on the back surface of the non-processed surface, the circuit that can prevent the concave-convex shadower from being connected to the invention in item 4 of the scope of patent application sounds the processed surface. A color-changing medium such as a color-changing coating and a color-changing label is used for the non-processed surface of the substrate. . This color-changing member can adopt the invention in item 7 of the scope of patent application. When processing the surface, the temperature and pressure are measured. The sensor for the aforementioned processing surface of the hard substrate is grinded and the sensor is used. The device uses a hard substrate for the measurement, and uses the hard substrate to carry out the transmission of the message.

V. Description of the invention (3) 40ΜΙ3-The desired processing method is actually processed, and the state of the aforementioned processed surface is measured. The invention in the eighth aspect of the patent application is a method for disposing a color-changing member that changes color with temperature on a non-processed surface of a rigid substrate, and is used to measure the temperature of the processed surface of the rigid substrate. The discoloration temperature of the discoloration member is set to multi-stage ', and the aforementioned hard substrate is processed by a processing method that we desire. The invention in the ninth scope of the patent application is that when a hard substrate is clamped by a clamping device, a pressure sensitive sheet is placed between the rigid substrate and the clamping device, and the aforementioned hard substrate is processed. The invention of item 10 in the scope of the patent application consists of: a hard substrate having a measuring device for measuring the state of the processing surface; an information processing device for processing measurement information of the hard substrate; It is made up of an organization. The invention of item 11 in the scope of patent application is composed of: a thermocouple embedded near the hard substrate processing surface at the front end of the hard substrate; wiring connected to the thermocouple; and a recording device connected to the aforementioned thermocouple through the wiring . The recording device is fixed to a hard substrate holding mechanism of a processing device, and the hard substrate and the recording device are fixed to prevent influence on the processing surface. The fixing device is provided in the hard substrate holding mechanism. The present invention relates to a rigid substrate, which is installed in a processing device that we desire, and the state of the processed surface is measured when the rigid substrate is processed. A sensor capable of sensing a radon object in a hard substrate and a device capable of taking out a measurement result of the sensor are mounted on a hard substrate 'processing device or an external part thereof' in advance, and then processed under the same conditions as a general hard substrate. First of all, the hard substrate provided with the sensor is planned for the hard substrate. Page 6 V. Description of the invention (4) The sensor is partially embedded, and an information extraction device is provided. The message is connected by a processor and passed through an external message processing device. The memory element or the color-changing medium is then connected to the hard substrate information processing device. The weight of the recording device is directly installed on the extension cable and the recording device does not cause the weight measurement result. The first figure is a diagram showing the first embodiment. Fig. 2 is a perspective view of the first embodiment. FIG. 3 is a cross-sectional view showing a large side of Embodiment 2. FIG. Fig. 4 is a perspective view showing a third embodiment. FIG. 5 is an exploded perspective view suitable for Embodiment 4. FIG. Fig. 6 is a block diagram showing Example 5. Explanation of symbols The wiring can be installed on the measurement device from this sensor. The wiring surface is on the back to transmit information to non-memory devices on a rigid substrate. It is installed on the processing device, and the processing device uses a storage device, so that when the processing affects the processing, the measurement rigid substrate structure measurement value is directly and sent to the setting surface. Schematic diagrams showing the main structure of the correct measurement device, including the wiring and information, are formed. Partially broken parts are placed in the measurement. The rigid substrate for measurement is used in the processing device for load measurement methods. Part of the substrate is broken

V. Description of the invention (5) 4 U⑽4 3. 1 wafer for measurement, 11 thermal sensor, 1 2 wiring '1 3 wires, 2 recording device, 3 pads, 4 splint, 5 balancing device, 6 top ring' 1 a wafer for measurement, 11 a sensor, 2 a memory circuit, 1 b rigid substrate for measurement, 1 b piezoelectric element, 1 2 b wiring, 1 3 b wire '1 c pressure sensing sheet, 丨 c hard substrate, 11 c vertical wiring, 1 2 c horizontal wiring, Examples of 1 d hard substrate for measurement, 10 d color-changing coating layer, and lid ~ 15d color-changing coating Examples Hereinafter, each embodiment of the present invention will be described with reference to the drawings. Example 1 FIG. 1 is a diagram showing a main structure of a measuring device of Example 1. FIG. Fig. 2 is a partially broken perspective view of the measurement hard substrate used in Example 1. This embodiment is an example in which a semiconductor wafer of a hard substrate is polished by a single-piece grinding device and measured in a processing device. As shown in FIG. 1, the main structure of this embodiment is a top ring 6 of a general polishing device, a measurement wafer polished by the top ring 6, and a pad abutting the back of the measurement wafer 1. 3. A clamp 4 (tempute) holding the measurement wafer 1 mounted on the pad 3, a recording device 2 fixed to the top ring 6, and a balancing device 5 corresponding to the weight of the recording device 2. As shown in the figure, the measuring wafer j has the same shape as the wafer that is usually ground. A plurality of thermal sensors 11 are connected to the thermal sensor 11 to measure: 1 is formed by printing such as lithography, and the wiring 12 is concentrated at 2 phases and two ends, and is connected to the above by a wire 13 The record pack. Moreover, the printed surface of this wiring 12 is protected by resin (not shown).

406343 V. Description of the invention (6) Protection can prevent L Λ < disconnection caused by load concentration and waterproof effect. The measurement method of this measuring device is "quoted." m + is ground under the same conditions as normal grinding. In this grinding process, Η Η, 钏, 钏, 钍, 钍, 俏, 俏, 笨, 笨, and…, the sensor 11 is stored in the long-term recording device 2 through the wiring 1, and the wire is transmitted. After grinding, take out this recording device 2 and take this 1 out of 1 λ φ 谮, cold, _ & This message is sent to a dedicated analysis device (not shown) for analysis. — ^, The thermal sensor 11 is a sensor in the form of a thermocouple, which is buried in a hole dug to the back of the wafer 1 for measurement, leaving only a grinding and polishing amount, or installed in a hole penetrating the crystal BΠ for measurement. These arrangements are selected according to the purpose of the measurement, the amount of abrasion and the type of abrasive particles. Since the wiring is printed on the back surface of the wafer 1 for measurement, it is not affected by the pressure of the polishing load. However, it is not limited to this method. For example, a wiring exposed on the outside of the aa circle is used. In order not to be affected by the unevenness of the wiring, a soft pad may be used. As the pad, for example, a silicone rubber having a sufficient thickness of 30% or more can be used. Example 2 FIG. 3 is a partially enlarged side cross-sectional view showing the structure of the rigid substrate for measurement in Example 2. FIG. This embodiment does not require the wiring of Embodiment 1 and the measurement wafer connected to the recording device 2 fixed to the outside. That is, in the measurement wafer 1a of this embodiment, a sensor 11 'is embedded in the measurement wafer 1a to form a memory circuit 2a adjacent to each sensor 丨 a in the measurement wafer 1a. Therefore, 'the measurement wafer 1 a has an information storage device therein, because

-4 ^ -6343 V. Description of the invention (7) ^ Appearance is slightly the same as-wafer, so there is no need to combine it with the measurement. For example, an intermittent processing device can process other circles at the same time. A dedicated analysis device (not shown in the figure, = each path 2a is taken and analyzed after processing). &Quot; Electrical Example 3 In this implementation, In Example 3, the purpose is to measure the load distribution of the load on the working surface during surface grinding and polishing. Figure 4 is a perspective view showing a rigid hard substrate for measurement used in Example 3. Process drawing: Implementation Non-addition of the hard substrate 1b for measurement in Example 3

The multiple piezoelectric elements of the piezo-type semiconductor of Si ::, f are arranged in a sub-shape "connected to the wiring 12b" in the same manner as described above, and the load information is retrieved and stored from the piezoelectric 70 element 11b. Example 4 Example 4 is a method for measuring the redistribution of load on the same machined surface as in Example 3 above. Fig. 5 is a perspective view of the load measurement method of Example 4. Figs. # π As shown in FIG. 5 'In this embodiment, the pressure sensing force of the load $ H fe 1 e itb Μ force sensing sheet 丨 c is composed of a vertical wiring]] c and a grid formed by the horizontal wiring 12 c, It can sense the voltage change caused by the pressure change at the intersection of each wiring. When using this pressure-sensitive sheet 1 c to measure the load, the spot-processed hard substrate 10 c is made to have the same shape, and it is set to hold the hard substrate i 0c.

Page 10 40G343 ------- V. Description of the invention (8) Between devices 3c, load information is retrieved and stored in the same manner as in the above embodiment. Embodiment 5 In each of the above embodiments, the temperature or pressure is converted into an electrical signal, and the information is memorized and analyzed by a recording device. In this embodiment 5, the state of the working surface is measured by a medium that generates a pressure or temperature change. Fig. 6 is a perspective view showing a partially broken rigid substrate for measurement in Example 5. As shown in Fig. 6, in the hard substrate for measurement of Example 5 shown in this figure, a non-processed surface is coated with a color-changing coating layer that changes color due to temperature change. On the top of the color-changing coating layer 10d, the color-changing coatings 11 to 15 d having different color-changing temperatures are applied at intervals of a stripe shape and intersected to expose the coating surfaces of the color-changing coatings 11 to 15d in a grid pattern. Therefore, with this temperature change, the color change of the coating layer can occur in 5 stages due to the temperature rise. At the same time, the distribution of the temperature change of the entire color-changing coating layer 10d can be analyzed. In addition, when the change in the substrate is measured using this discoloring medium, since the measurement is indirect, the measurement accuracy in each of the above embodiments is not high, and no configuration is required, and the structure of the recording device is simplified. It is expected that in the temperature measurement of temperature discoloration, other media such as temperature discoloration labels can also be used. In addition, the measurement object in the above-mentioned embodiment is to measure the load distribution during grinding and grinding ', but it is not limited to this condition, and the PH value of the abrasive grains, the flow rate, and the amount of removal can also be measured. Since the present invention has the structure as above, it has the following good effects

I circle ill Page 11 (π \ V. Description of the invention (9) Results: 1 is the direct measurement, so you can get a positive break value. It is performed on the same conditions, so 4. The processing is based on the actual measurement. Adding (3 Ί ϊ ϊΓ can reflect a large amount of analytical data in the actual addition. ”Improved or profitable fields can get their measured values at various parts of the hard substrate, so the method is borrowed.] Using" changes in bits "can develop higher accuracy The processing side (4) can be measured under normal processing conditions without using special processing and red processing conditions by using a measuring device. 〇) It has a rigid substrate for measuring results, because any processing strip is hard / In the measurement of the device inside the board, the jealousy * conditions can be used. Therefore, for example, μ private bucket and a τ 2; simultaneous processing of a hard substrate to perform "(6) use of color change and clarity" is called 疋. This is an inexpensive manufacturing measurement Hard substrate.

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Claims (1)

Γ2— 406343 _ _____ 6. Scope of patent application 1. A hard substrate for measuring the processing surface temperature of a hard substrate, which is characterized by comprising: an sensor that senses the state of the processing surface of the hard substrate; and a recording device 'series hard substrate One part is used to record the information of the sensor. 2 · —A kind of hard substrate for measuring the temperature of the processing surface of the hard substrate, which is characterized in that: an sensor that senses the state of the processing surface of the hard substrate is provided on a portion of the hard substrate and is provided on the non-processed surface of the hard substrate; The circuit connected to the sensor is arranged outside the rigid substrate, and a recording device for recording the aforementioned sensor information can be connected to the circuit. 3. The hard substrate for measuring the temperature of the processing surface of the hard substrate as described in item 2 of the scope of the patent application, wherein the circuit connected to the sensor is printed on the non-processed surface of the hard substrate. 4. A hard substrate for measuring the temperature of a processed surface, characterized in that a non-processed surface of the hard substrate is provided with a discoloring member that changes color with temperature. 5. The hard substrate for measuring the processing surface temperature of the hard substrate as described in item 1 or 2 of the scope of the patent application, wherein the sensor that senses the state of the hard substrate processing surface is a thermoelectromotive force sensor. 6. The hard substrate for measuring the processing surface temperature of the hard substrate as described in item 1 or 2 of the scope of the patent application, wherein the sensor that senses the state of the hard substrate processing surface is a piezoelectric semiconductor. 7. —Method for measuring the processing surface temperature of a hard substrate Page 13 6. The scope of the patent application lies in: when grinding and processing the processing surface of a hard substrate and measuring the state of temperature and pressure, use a sensor equipped with a sensor that senses the state of the processing surface and a transmission device that takes information from the sensor The rigid substrate for measurement is actually processed by the processing method I desire, and the state of the processed surface is measured. 8. —A method for measuring the temperature of the processing surface of a hard substrate is a method for measuring the temperature of the processing surface of a hard substrate by disposing a color-changing member that changes color with temperature on the non-processing surface of the hard substrate. The discoloration temperature of the discoloration member is set to multiple stages, and the aforementioned hard substrate is processed by a processing method that we desire. 9. A method for measuring the processing surface pressure of a rigid substrate, characterized in that: when the rigid substrate is clamped and processed by a clamping device, a pressure-sensitive thin plate is disposed between the rigid substrate and the clamping device, and the aforementioned rigid substrate is processed 〇I 0. —A kind of measuring device for the processing surface temperature of a hard substrate, including: a hard substrate having a measuring device for measuring the state of the processed surface; an information processing device for processing the measuring information of the hard substrate; and A mechanism is provided for mounting the measurement device and / or the information processing device on a processing device. II. A device for measuring the processing surface temperature of a rigid substrate, which features Page 14-406343- 6. The scope of patent application includes: a thermocouple, which is buried near the hard substrate processing surface at the front end of the hard substrate; a wiring connected to the thermocouple; and a recording device, through which the wiring and The aforementioned thermocouples are connected; the recording device is fixed to the rigid substrate holding mechanism of the processing device, and the fixed substrate and the recording device can be fixed to prevent the influence on the processing surface. Inside. Page 15