JP2003247896A - Thermocouple wafer sensor - Google Patents

Thermocouple wafer sensor

Info

Publication number
JP2003247896A
JP2003247896A JP2002049637A JP2002049637A JP2003247896A JP 2003247896 A JP2003247896 A JP 2003247896A JP 2002049637 A JP2002049637 A JP 2002049637A JP 2002049637 A JP2002049637 A JP 2002049637A JP 2003247896 A JP2003247896 A JP 2003247896A
Authority
JP
Japan
Prior art keywords
thermocouple
plate
substrate
hole
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002049637A
Other languages
Japanese (ja)
Other versions
JP3792165B2 (en
Inventor
Masaki Hayashi
林  正樹
Masanori Watanabe
雅教 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HAYASHI DENKO KK
Original Assignee
HAYASHI DENKO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HAYASHI DENKO KK filed Critical HAYASHI DENKO KK
Priority to JP2002049637A priority Critical patent/JP3792165B2/en
Publication of JP2003247896A publication Critical patent/JP2003247896A/en
Application granted granted Critical
Publication of JP3792165B2 publication Critical patent/JP3792165B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sensitive flat temperature sensor in which a thermocouple fitting part does not drop off a substrate. <P>SOLUTION: A rear surface 3 of a substrate 1 is provided with a recessed part 5 and a central through hole 6, which is used as a fitting part 4. A metal holding plate 7 to which a thermocouple hot contact C is welded is so housed in the recessed part as to be flush with the substrate rear surface. The upper surface of the through hole is covered with a lid 9, and the recessed part, the inside of through hole, and the upper surface of lid are filled and coated with a heat-resistant inorganic cement M, with thermocouple wires A and B drawn outside through the lid. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、シリコンウエハ
等、板状体の表面温度を測定するための熱電対ウエハセ
ンサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermocouple wafer sensor for measuring the surface temperature of a plate-like body such as a silicon wafer.

【0002】[0002]

【従来の技術】熱処理炉内のウエハ表面温度を熱電対で
測定するウエハセンサとして、ウエハの片面に形成した
凹部に熱電対の測温接点を位置させると共にこの凹部内
に穿設した複数の素線貫通孔を通して素線を引出して無
機質セメントで埋設固定したものが知られている(特開
平11−51776、同2000−111418)。一
般に無機質セメントは、シリコン(ウエハ)に対して接
合力が弱いためセメントと温接点が凹部から脱落し易い
欠点がある。このため凹部を断面楔形にしたり、多数の
貫通孔を設けて素線を折返したりすることが行われてい
る(特開平11−51776)が、ウエハ自体の強度を
低下させる他、ウエハの加工が困難である。
2. Description of the Related Art As a wafer sensor for measuring a wafer surface temperature in a heat treatment furnace by a thermocouple, a thermocouple temperature measuring contact is located in a concave portion formed on one side of a wafer and a plurality of strands formed in the concave portion. It is known that an element wire is drawn out through a through hole and embedded and fixed with an inorganic cement (JP-A-11-51776, 2000-111418). In general, inorganic cement has a weak bonding force with respect to silicon (wafer), and thus has a drawback that the cement and the hot junction are likely to drop from the recess. For this reason, the recess has a wedge-shaped cross section, or a large number of through holes are provided to fold back the wires (Japanese Patent Laid-Open No. 11-51776). However, in addition to reducing the strength of the wafer itself, processing of the wafer is also difficult. Have difficulty.

【0003】[0003]

【発明が解決しようとする課題】本発明は、多数の熱電
対温接点をウエハ基板の板面上に散在させて測温精度と
感度を高めると共に温接点と固着セメントの脱落防止手
段を基板の表裏両面に構成して丈夫な測温ウエハその他
の平板状温度センサを提供するものである。
SUMMARY OF THE INVENTION According to the present invention, a large number of thermocouple hot junctions are scattered on the plate surface of a wafer substrate to enhance the temperature measurement accuracy and sensitivity, and at the same time, the hot junctions and a means for preventing adhered cement from falling off are provided. The present invention provides a temperature-measuring wafer and other flat plate-shaped temperature sensors which are constructed on both front and back sides.

【0004】[0004]

【課題を解決するための手段】本発明熱電対ウエハセン
サは、シリコンウエハなどの基板の裏面側に凹部と中心
貫通孔を形成して取付け部とし、この凹部内に熱電対温
接点を溶着した金属保持板をその表面を前記基板裏面と
同一にして収容し、更に貫通孔の上面を蓋板で覆って前
記凹部と貫通孔の内部及び前記蓋板上面を耐熱性無機質
セメントによって充填被覆し、熱電対素線を蓋板を通し
て外部に引出して構成される。熱電対保持板と蓋板はセ
メントによって固着一体化され、夫々凹部の段部と基板
表面に係止されているから測温部が表面側にも裏面側に
も遥動したり脱落することはない。なお、温接点保持板
としては白金薄板が好適であり、蓋板はアルミナ又はシ
リカなどのセラミック材が好適である。素線は、セメン
トや蓋板によって絶縁されるが、碍子を介して外部に引
出してもよい。
A thermocouple wafer sensor according to the present invention is a metal having a recess and a central through hole formed on the back surface side of a substrate such as a silicon wafer as a mounting portion, and a thermocouple hot junction is welded in the recess. The holding plate is housed so that its front surface is the same as the back surface of the substrate, the upper surface of the through hole is covered with a cover plate, and the inside of the recess and the through hole and the upper surface of the cover plate are filled and covered with a heat-resistant inorganic cement, and thermoelectric It is constructed by pulling out a pair of wires to the outside through a cover plate. The thermocouple holding plate and lid plate are fixed and integrated by cement, and are locked to the stepped portion of the recess and the substrate surface, respectively, so the temperature measuring unit cannot move or drop off on the front side or the back side. Absent. A thin platinum plate is suitable for the hot junction holding plate, and a ceramic material such as alumina or silica is suitable for the lid plate. The wire is insulated by cement or the cover plate, but may be drawn out through an insulator.

【0005】[0005]

【発明の実施の形態】図中、1はシリコンウエハ又はガ
ラス板などの基板(厚さ約0.5mm)、2は表面、3
は裏面、4は熱電対取付け部である。5は、基板の裏面
に設けた凹部(直径3.0mm、深さ0.3mm) 6はその中心に貫設した貫通孔(直径1.2mm)であ
る。凹部5と貫通孔6は、例えば超音波加工機によって
形成される。7は、白金等の金属薄板(厚さ0.2m
m、直径2.5mm)でなる埋め込み保持板であって、
その直径は凹部5の直径より小さく、貫通孔6の直径よ
り大きい。また、金属薄板の底面は基板底面と同一面と
して形成される。8は、金属薄板の中心に設けた素線掛
止孔であって、例えばアルメルクロメルなどの熱電対素
線A,Bの端部を溶接(TIG溶接)して温接点とす
る。この掛止孔は、温接点の溶接形成に便利であるが、
掛止孔を設けず、温接点を薄板の表面側に溶着してもよ
い。9は厚さ0.2〜0.3mmの蓋板であってセラミ
ック材で構成され、貫通孔6より大径で一対の素線挿通
部10が形成されている。蓋板と素線挿通部の形状は、
図の実施例に限らず、C形、E型等任意である。Mは、
凹部5及び貫通孔6を充填し、更に蓋板9を覆う固着用
耐熱セメントであって充填塗布して自然乾燥後、熱硬化
させる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In the drawings, 1 is a substrate such as a silicon wafer or glass plate (thickness is about 0.5 mm), 2 is a surface, 3
Is a back surface, and 4 is a thermocouple mounting portion. Reference numeral 5 denotes a recess (diameter 3.0 mm, depth 0.3 mm) provided on the back surface of the substrate. Reference numeral 6 denotes a through hole (diameter 1.2 mm) penetrating the center thereof. The recess 5 and the through hole 6 are formed by, for example, an ultrasonic processing machine. 7 is a thin metal plate such as platinum (thickness 0.2 m
m, diameter 2.5 mm), which is an embedded holding plate,
The diameter is smaller than the diameter of the recess 5 and larger than the diameter of the through hole 6. Further, the bottom surface of the metal thin plate is formed to be flush with the bottom surface of the substrate. Reference numeral 8 denotes an element wire hooking hole provided at the center of the thin metal plate, which is a hot junction by welding (TIG welding) the ends of thermocouple elements A and B such as alumel chromel. This hook hole is convenient for welding the hot junction,
The hot junction may be welded to the surface side of the thin plate without providing the hook hole. Reference numeral 9 is a lid plate having a thickness of 0.2 to 0.3 mm, which is made of a ceramic material and has a diameter larger than that of the through hole 6 and a pair of wire insertion portions 10 formed therein. The shape of the cover plate and the wire insertion part is
The present invention is not limited to the embodiment shown in the figure, but any type such as C type and E type may be used. M is
A heat-resistant cement for fixing, which fills the recesses 5 and the through holes 6 and further covers the cover plate 9, is filled and applied, naturally dried, and then thermoset.

【0006】本発明センサは、熱電対接点Cが基板裏面
に露出している金属保持板に溶着されて凹部に収容され
ると共に基板表面上の蓋板と一体に形成されているから
脱落のおそれがない上、基板裏面に露出している金属保
持板が伝熱薄板として機能するから感度がよく、基板表
面温度を忠実に測定できる。本発明センサは、円形板体
に限らず、液晶パネルなど方形板体のセンサとしても利
用できる。
In the sensor of the present invention, the thermocouple contact C is welded to the metal holding plate exposed on the back surface of the substrate and accommodated in the recess, and is formed integrally with the lid plate on the front surface of the substrate. Moreover, since the metal holding plate exposed on the back surface of the substrate functions as a heat transfer thin plate, the sensitivity is good and the substrate surface temperature can be measured faithfully. The sensor of the present invention can be used not only as a circular plate but also as a sensor for a rectangular plate such as a liquid crystal panel.

【図面の簡単な説明】[Brief description of drawings]

【図1】基板上の温接点配置平面図FIG. 1 is a plan view of a hot junction arrangement on a substrate.

【図2】温接点取付け部の断面図FIG. 2 is a cross-sectional view of the hot junction mounting part.

【図3】蓋板の平面図FIG. 3 is a plan view of a cover plate.

【図4】保持板平面図FIG. 4 is a plan view of a holding plate.

【符号の説明】[Explanation of symbols]

1 基板 2 表面 3 裏面 4 取付け部 5 凹部 6 貫通孔 7 温接点保持板 8 掛止孔 9 蓋板 10 素線挿通部 A、B 素線 C 熱電対接点 M 無機質セメント 1 substrate 2 surface 3 back side 4 Mounting part 5 recess 6 through holes 7 Hot junction holding plate 8 hook holes 9 Lid plate 10 Wire insertion part A and B strands C thermocouple contact M inorganic cement

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】基板の裏面側に凹部と中心貫通孔が形成さ
れ、前記凹部内に熱電対温接点を溶着した金属保持板が
その裏面を前記基板裏面と同一にして収容され、前記貫
通孔の上面を覆う蓋板が載置されると共に熱電対素線が
前記蓋板を通して外部に引出され、前記凹部と前記貫通
孔の内部及び前記蓋板上面を耐熱性無機質セメントによ
って充填被覆してなる熱電対ウエハセンサ。
1. A recess and a center through hole are formed on the back side of a substrate, and a metal holding plate having a thermocouple hot junction welded therein is housed in the recess with the back side being the same as the back side of the substrate. And a thermocouple wire is drawn to the outside through the lid plate, and the inside of the recess and the through hole and the upper surface of the lid plate are filled and covered with a heat-resistant inorganic cement. Thermocouple wafer sensor.
【請求項2】温接点保持板が白金薄板であり、蓋板がセ
ラミック板でなる請求項1記載のウエハセンサ。
2. The wafer sensor according to claim 1, wherein the hot-contact holding plate is a platinum thin plate and the lid plate is a ceramic plate.
JP2002049637A 2002-02-26 2002-02-26 Thermocouple wafer sensor Expired - Fee Related JP3792165B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002049637A JP3792165B2 (en) 2002-02-26 2002-02-26 Thermocouple wafer sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002049637A JP3792165B2 (en) 2002-02-26 2002-02-26 Thermocouple wafer sensor

Publications (2)

Publication Number Publication Date
JP2003247896A true JP2003247896A (en) 2003-09-05
JP3792165B2 JP3792165B2 (en) 2006-07-05

Family

ID=28662097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002049637A Expired - Fee Related JP3792165B2 (en) 2002-02-26 2002-02-26 Thermocouple wafer sensor

Country Status (1)

Country Link
JP (1) JP3792165B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006138637A (en) * 2004-11-10 2006-06-01 Kawaso Electric Industrial Co Ltd Temperature measuring substrate for substrate heat treatment furnace
JP2012222259A (en) * 2011-04-13 2012-11-12 Koyo Thermo System Kk Wafer with thermocouple, wafer support pin, and wafer support structure
JP2016118534A (en) * 2014-10-23 2016-06-30 エムオーベーアー モビール アウトマチオーン アーゲーMOBA Mobile Automation AG Temperature measurement device and skip of transport vehicle
CN112212994A (en) * 2020-09-25 2021-01-12 电子科技大学 Temperature distribution detection device for plasma etching wafer
JP2022508112A (en) * 2018-11-14 2022-01-19 サイバーオプティクス コーポレーション Improved wafer-like sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105784163A (en) * 2016-03-10 2016-07-20 威卡自动化仪表(苏州)有限公司 High-temperature thermocouple

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006138637A (en) * 2004-11-10 2006-06-01 Kawaso Electric Industrial Co Ltd Temperature measuring substrate for substrate heat treatment furnace
JP4651362B2 (en) * 2004-11-10 2011-03-16 川惣電機工業株式会社 Temperature measuring substrate for substrate heat treatment furnace
JP2012222259A (en) * 2011-04-13 2012-11-12 Koyo Thermo System Kk Wafer with thermocouple, wafer support pin, and wafer support structure
JP2016118534A (en) * 2014-10-23 2016-06-30 エムオーベーアー モビール アウトマチオーン アーゲーMOBA Mobile Automation AG Temperature measurement device and skip of transport vehicle
US10112520B2 (en) 2014-10-23 2018-10-30 Moba Mobile Automation Ag Temperature measuring device and transport vehicle skip
JP2022508112A (en) * 2018-11-14 2022-01-19 サイバーオプティクス コーポレーション Improved wafer-like sensor
JP7195427B2 (en) 2018-11-14 2022-12-23 サイバーオプティクス コーポレーション Improved wafer sensor
CN112212994A (en) * 2020-09-25 2021-01-12 电子科技大学 Temperature distribution detection device for plasma etching wafer

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