JPH11344386A - Wafer with temperature detection element - Google Patents
Wafer with temperature detection elementInfo
- Publication number
- JPH11344386A JPH11344386A JP16443498A JP16443498A JPH11344386A JP H11344386 A JPH11344386 A JP H11344386A JP 16443498 A JP16443498 A JP 16443498A JP 16443498 A JP16443498 A JP 16443498A JP H11344386 A JPH11344386 A JP H11344386A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- hole
- detecting element
- temperature detecting
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は温度検出素子を有す
るウェーハ、特に、温度分布を測定する温度検出素子を
有するウェーハに関するものである。The present invention relates to a wafer having a temperature detecting element, and more particularly to a wafer having a temperature detecting element for measuring a temperature distribution.
【０００２】[0002]
【従来の技術】一般に、炉内に装入したウェーハの温度
分布は均一であることが必要であり、この温度分布を測
定するには、熱電対等の温度検出素子をウェーハの表面
に貼付し、または沿わせて行なっている。2. Description of the Related Art Generally, the temperature distribution of a wafer loaded in a furnace must be uniform. To measure this temperature distribution, a temperature detecting element such as a thermocouple is attached to the surface of the wafer, Or we are doing along.
【０００３】また、ウェーハ面の任意の箇所に窪みまた
は孔を形成し、この窪み内に温度分布を測定する熱電対
の先端感熱部を挿入し、無機接着剤等にて固着すること
も提案されている。It has also been proposed to form a dent or hole at an arbitrary position on the wafer surface, insert a thermosensitive tip of a thermocouple for measuring a temperature distribution into the dent, and fix it with an inorganic adhesive or the like. ing.
【０００４】[0004]
【発明が解決しようとする課題】然しながら、温度検出
素子のウェーハへの取付け作業は難しく、炉内の任意の
断面位置における温度分布を測定する場合には、熱電対
を測定しようとする位置に移動させる必要があり、特に
多数の温度測定点を必要とする場合には、多くの時間を
必要とした。However, the work of mounting the temperature detecting element on the wafer is difficult, and when measuring the temperature distribution at an arbitrary cross-sectional position in the furnace, it moves to the position where the thermocouple is to be measured. This requires a lot of time, especially when many temperature measurement points are required.
【０００５】更に、熱電対の移動のあと測定結果が安定
するまでには時間がかかる等の欠点があった。Further, there is a disadvantage that it takes time until the measurement result becomes stable after the movement of the thermocouple.
【０００６】また、ウェーハ表面に窪みまたは孔を形成
し、この窪み又は孔に熱電対の先端部を挿入し、無機接
着剤などにて固着した場合、ウェーハと熱電対と無機接
着剤の熱膨張率が違うために、ウェーハを昇降温させた
時に熱サイクル疲労が生じて、熱電対の脱落が生じるこ
とがある。Further, when a depression or a hole is formed in the surface of the wafer, and the tip of the thermocouple is inserted into the depression or the hole and fixed with an inorganic adhesive or the like, the thermal expansion of the wafer, the thermocouple and the inorganic adhesive is caused. Due to the different rates, thermal cycle fatigue may occur when the temperature of the wafer is raised and lowered, and the thermocouple may fall off.
【０００７】本発明はこの様な問題を解決したものであ
る。The present invention has solved such a problem.
【０００８】[0008]
【課題を解決するための手段】本発明の温度検出素子を
有するウェーハは、互に重ねて載置した２枚のウェーハ
によって温度検出素子を挟持したことを特徴とする。A wafer having a temperature detecting element according to the present invention is characterized in that the temperature detecting element is sandwiched between two wafers placed on top of each other.
【０００９】また、本発明の温度検出素子を有するウェ
ーハは、互に重ねて載置した２枚のウェーハのうちの、
上部ウェーハ面の測定個所に孔とこの孔から上記上部ウ
ェーハの下面に沿って延びる溝を形成し、この孔を介し
て上記溝内に差し込んだ温度検出素子を上記上部ウェー
ハと下部ウェーハとにより挟持せしめたことを特徴とす
る。Further, the wafer having the temperature detecting element of the present invention is one of two wafers placed on top of each other.
A hole is formed at a measurement point on the upper wafer surface and a groove extending from the hole along the lower surface of the upper wafer, and the temperature detecting element inserted into the groove through the hole is sandwiched between the upper wafer and the lower wafer. It is characterized by being confused.
【００１０】また、本発明の温度検出素子を有するウェ
ーハは、互に重ねて載置した２枚のウェーハのうちの、
上部ウェーハ面の測定箇所に温度検出素子より狭い上部
開口と上記温度検出素子より広い下部開口とを有する断
面円錐台状の孔を形成し、この孔内に上記温度検出素子
を挿入し、上記上部ウェーハと下部ウェーハとにより挟
持せしめたことを特徴とする。Further, the wafer having the temperature detecting element of the present invention is one of two wafers placed on top of each other.
A truncated conical hole having an upper opening narrower than the temperature detecting element and a lower opening wider than the temperature detecting element is formed at a measurement point on the upper wafer surface, and the temperature detecting element is inserted into the hole, It is characterized by being sandwiched between a wafer and a lower wafer.
【００１１】上記温度検出素子は、熱電対であることを
特徴とする。The temperature detecting element is a thermocouple.
【００１２】[0012]
【発明の実施の形態】以下図面によって本発明の実施例
を説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１３】本発明においては図１及び図２に示すよう
に、サセプタ（図示せず）上に２枚のウェーハ１ａ，１
ｂを重ねて載置し、あらかじめ、上部ウェーハ１ａの面
の任意の測定点（１〜３０点）に孔２と、上記上部ウェ
ーハ１ａの下面表面に沿って上記孔２から延びる溝３を
設け、この孔２を介して上記上部ウェーハ１ａの上部か
ら上記溝３内に熱電対４の先端感熱部６を差し込んで、
上記上部ウェーハ１ａと下部ウェーハ１ｂの上面により
挟持せしめると共に、上記上部ウェーハ１ａと上記下部
ウェーハ１ｂをビス５により互に固定する。In the present invention, as shown in FIGS. 1 and 2, two wafers 1a, 1a are placed on a susceptor (not shown).
b are placed on top of each other, and a hole 2 is provided in advance at any measurement point (1 to 30 points) on the surface of the upper wafer 1a, and a groove 3 extending from the hole 2 along the lower surface of the upper wafer 1a. By inserting the tip heat-sensitive portion 6 of the thermocouple 4 from the upper portion of the upper wafer 1a into the groove 3 through the hole 2,
The upper wafer 1a and the lower wafer 1b are sandwiched between the upper surfaces of the upper wafer 1a and the lower wafer 1b, and the upper wafer 1a and the lower wafer 1b are fixed to each other by screws 5.
【００１４】本発明の他の実施例においては、上記孔２
及び溝３を設ける代わりに、図３に示すように、上部ウ
ェーハ１ａの面の任意の測定点に熱電対の先端感熱部６
より狭い上部開口７ａと上記先端感熱部６より広い下部
開口７ｂとを有する断面円錐台状の孔７を設け、この孔
７内に上記熱電対の先端感熱部６を位置せしめ、上部ウ
ェーハ１ａと下部ウェーハ１ｂとにより挟持せしめる。In another embodiment of the present invention, the hole 2
Instead of providing the groove and the groove 3, as shown in FIG. 3, the tip of the thermocouple 6 may be located at an arbitrary measurement point on the surface of the upper wafer 1a.
A truncated conical hole 7 having a narrower upper opening 7a and a lower opening 7b wider than the tip heat-sensitive portion 6 is provided. In the hole 7, the tip heat-sensitive portion 6 of the thermocouple is located, and the upper wafer 1a and It is clamped by the lower wafer 1b.
【００１５】また、熱電対４は、シース型でも素線でも
良く、その種類は使用温度や雰囲気によって自由に選択
できる。また、Ｒ型の素線を使用すれば１２００℃まで
使用することができる。The thermocouple 4 may be a sheath type or a strand, and the type can be freely selected depending on the use temperature and atmosphere. If an R-shaped element wire is used, it can be used up to 1200 ° C.
【００１６】上記ウェーハの材質は、主にＳｉ，Ｓｉ
Ｃ，Ａｌ2 Ｏ3 等であり、どの材質においても熱電対４
の取り付けは可能である。The material of the wafer is mainly Si, Si
C, Al 2 O 3 and the like.
Is possible.
【００１７】[0017]
【発明の効果】上記のように本発明によれば、上部ウェ
ーハ１ａの面にあけた孔１及び溝３又は孔７に熱電対の
感熱部を挿入し、下部ウェーハ１ｂにより挟持した構造
としたので、低温から高温（−１０℃〜１２００℃）ま
での測定が熱電対を脱落すること無く可能となるため、
半導体プロセスの温度バイアス値を決めることが可能と
なる等大きな利益がある。As described above, according to the present invention, the thermosensitive portion of the thermocouple is inserted into the hole 1 and the groove 3 or the hole 7 formed in the surface of the upper wafer 1a, and is sandwiched by the lower wafer 1b. Since measurement from a low temperature to a high temperature (−10 ° C. to 1200 ° C.) becomes possible without dropping the thermocouple,
There are great benefits such as the ability to determine the temperature bias value for a semiconductor process.
【図１】本発明の温度検出素子を有するウェーハの平面
図である。FIG. 1 is a plan view of a wafer having a temperature detecting element of the present invention.
【図２】図１に示す温度検出素子を有するウェーハの断
面図である。FIG. 2 is a sectional view of a wafer having the temperature detecting element shown in FIG.
【図３】本発明の温度検出素子を有するウェーハの他の
実施例における断面図である。FIG. 3 is a cross-sectional view of another embodiment of the wafer having the temperature detecting element of the present invention.
１ａ 上部ウェーハ １ｂ 下部ウェーハ ２ 孔 ３ 溝 ４ 熱電対 ５ ビス ６ 先端感熱部 ７ 孔 ７ａ 上部開口 ７ｂ 下部開口 1a Upper Wafer 1b Lower Wafer 2 Hole 3 Groove 4 Thermocouple 5 Screw 6 Heat Sensitive Part 7 Hole 7a Upper Opening 7b Lower Opening
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１１年４月１９日[Submission date] April 19, 1999
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Correction target item name] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【特許請求の範囲】[Claims]
【請求項１】 互に重ねて載置した２枚のウェーハと、
このウェーハのうちの上部ウェーハの温度測定個所に形
成した孔とより成り、この孔が上記上部ウェーハの上面
から下面に向って延びる孔部分と、この孔部分の下部か
ら上記上部ウェーハの下面に沿って延びる溝より成り、
上記孔部分を介して上記溝内に差し込まれた温度検出素
子が上記上部ウェーハと下部ウェーハとにより挟持され
ることを特徴とする温度検出素子を有するウェーハ。 1. Two wafers placed on top of each other ,
Shape on the temperature measurement point of the top wafer of the wafer
More become, the upper surface of the hole is above the upper wafer and form holes
From the lower part of this hole part
Consisting of a groove extending along the lower surface of the upper wafer ,
The hole through the part pointing in the groove write Mareta temperature sensing element is sandwiched between the said upper wafer and a lower wafer
Wafer having a temperature sensing element characterized by that.
【請求項２】 互に重ねて載置した２枚のウェーハと、
このウェーハのうちの上部ウェーハの温度測定個所に形
成した上記上部ウェーハの上面から下面に向って延びる
孔とより成り、この孔が上記上部ウェーハの温度を測定
する温度検出素子より狭い上部開口と上記温度検出素子
より広い下部開口とを有する断面円錐台状の孔であり、
上記孔内に挿入された上記温度検出素子が上記上部ウェ
ーハと下部ウェーハとにより挟持されることを特徴とす
る温度検出素子を有するウェーハ。 And two of the wafer was placed 2. A mutually overlapping,
Shape on the temperature measurement point of the top wafer of the wafer
Extending from the top to the bottom of the upper wafer form
Holes, which measure the temperature of the upper wafer
It is a cross-sectional truncated cone-shaped opening having a wide lower opening narrower top opening and said temperature detecting element from the temperature detecting element for,
Wafer having a temperature sensing element the hole inserted the temperature detecting element in is characterized in that it is sandwiched between the upper wafer and the lower wafer.
【請求項３】 上記温度検出素子が熱電対であることを
特徴とする請求項１または２記載の温度検出素子を有す
るウェーハ。 3. A wafer having a temperature sensing element according to claim 1 or 2, wherein the said temperature sensing element is a thermocouple.
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００８[Correction target item name] 0008
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００８】[0008]
【課題を解決するための手段】本発明の温度検出素子を
有するウェーハは、互に重ねて載置した２枚のウェーハ
と、このウェーハのうちの上部ウェーハの温度測定個所
に形成した孔とより成り、この孔が上記上部ウェーハの
上面から下面に向って延びる孔部分と、この孔部分の下
部から上記上部ウェーハの下面に沿って延びる溝より成
り、上記孔部分を介して上記溝内に差し込まれた温度検
出素子が上記上部ウェーハと下部ウェーハとにより挟持
されることを特徴とする。A wafer having a temperature detecting element according to the present invention is composed of two wafers placed on top of each other.
If, become more and holes formed in the temperature measurement point in the top wafer of the wafer, the holes of the upper wafer
A hole extending from the upper surface to the lower surface, and a hole below the hole;
The groove from the part extending along the lower surface of the upper wafer formed
Ri, clamping insert into the groove through the hole portions write Mareta temperature detecting element by the above upper wafer and a lower wafer
It is characterized by being performed.
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００９[Correction target item name] 0009
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００９】また、本発明の温度検出素子を有するウェ
ーハは、互に重ねて載置した２枚のウェーハと、このウ
ェーハのうちの上部ウェーハの温度測定個所に形成した
上記上部ウェーハの上面から下面に向って延びる孔とよ
り成り、この孔が上記上部ウェーハの温度を測定する温
度検出素子より狭い上部開口と上記温度検出素子より広
い下部開口とを有する断面円錐台状の孔であり、上記孔
内に挿入された上記温度検出素子が上記上部ウェーハと
下部ウェーハとにより挟持されることを特徴とする。Further, the wafer having the temperature detecting element of the present invention is composed of two wafers placed one on top of the other ,
A hole extending from the upper surface to the lower surface of the upper wafer formed at the temperature measurement point of the upper wafer of the wafer .
Ri made, the hole is a sectional truncated cone-shaped opening having a wide lower opening narrower top opening and said temperature detecting element from the temperature <br/> degree detecting element for measuring the temperature of the upper wafer, the hole inserted the temperature sensing element is characterized in that it is sandwiched between the upper wafer and the lower wafer.
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１０[Correction target item name] 0010
【補正方法】削除[Correction method] Deleted
【手続補正５】[Procedure amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１７[Correction target item name] 0017
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１７】[0017]
【発明の効果】上記のように本発明によれば、上部ウェ
ーハ１ａの面にあけた孔２及び溝３又は孔７内に挿入し
た温度検出素子を上部ウェーハ１ａと、下部ウェーハ１
ｂとにより挟持すると共に、上記孔を介してそのリード
線を取り出すようにしたので温度検出素子の設置作業が
極めて簡単、容易になる大きな利益がある。According to the present invention, as described above, the hole 2 and the groove 3 or the hole 7 formed in the surface of the upper wafer 1a are inserted into the hole 3.
The temperature detection element is connected to the upper wafer 1a and the lower wafer 1
b and the lead through the hole.
Since the wire was taken out, the installation work of the temperature detection element was
There are great benefits that are very simple and easy .
Claims (4)
って温度検出素子を挟持したことを特徴とする温度検出
素子を有するウェーハ。1. A wafer having a temperature detecting element, wherein the temperature detecting element is sandwiched between two wafers placed on top of each other.
ちの、上部ウェーハ面の測定個所に孔とこの孔から上記
上部ウェーハの下面に沿って延びる溝を形成し、この孔
を介して上記溝内に差し込んだ温度検出素子を上記上部
ウェーハと下部ウェーハとにより挟持せしめたことを特
徴とする温度検出素子を有するウェーハ。2. A hole and a groove extending from the hole along the lower surface of the upper wafer are formed at measurement points on the upper wafer surface of the two wafers placed one on top of the other. A wafer having a temperature detecting element, wherein the temperature detecting element inserted into the groove is held between the upper wafer and the lower wafer.
ちの、上部ウェーハ面の測定箇所に温度検出素子より狭
い上部開口と上記温度検出素子より広い下部開口とを有
する断面円錐台状の孔を形成し、この孔内に上記温度検
出素子を挿入し、上記上部ウェーハと下部ウェーハとに
より挟持せしめたことを特徴とする温度検出素子を有す
るウェーハ。3. A truncated conical cross section having an upper opening narrower than a temperature detecting element and a lower opening wider than the temperature detecting element at a measurement location on an upper wafer surface of two wafers placed on top of each other. A wafer having a temperature detecting element, wherein the hole is formed, the temperature detecting element is inserted into the hole, and is sandwiched between the upper wafer and the lower wafer.
特徴とする請求項１、２または３記載の温度検出素子を
有するウェーハ。4. The wafer having a temperature detecting element according to claim 1, wherein the temperature detecting element is a thermocouple.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16443498A JP2955930B1 (en) | 1998-05-29 | 1998-05-29 | Wafer having temperature detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16443498A JP2955930B1 (en) | 1998-05-29 | 1998-05-29 | Wafer having temperature detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2955930B1 JP2955930B1 (en) | 1999-10-04 |
| JPH11344386A true JPH11344386A (en) | 1999-12-14 |
Family
ID=15793098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16443498A Expired - Fee Related JP2955930B1 (en) | 1998-05-29 | 1998-05-29 | Wafer having temperature detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2955930B1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002257635A (en) * | 2001-03-06 | 2002-09-11 | Anritsu Keiki Kk | Wafer with temperature sensor |
| KR100358761B1 (en) * | 1999-09-15 | 2002-10-30 | (주)울텍 | Thin Film Thermocouple within the Bonded Silicon Wafers |
| KR100377417B1 (en) * | 2000-07-24 | 2003-03-29 | (주)울텍 | Apparatus and Fabrication Method of Substrate Temperature Mesurement |
| WO2006080423A1 (en) * | 2005-01-31 | 2006-08-03 | Bridgestone Corporation | Monitor wafer and method for monitoring wafer |
| CN104299925A (en) * | 2013-07-18 | 2015-01-21 | 技鼎股份有限公司 | Temperature measuring device for semiconductor process |
| KR20180133422A (en) | 2016-04-19 | 2018-12-14 | 도쿄엘렉트론가부시키가이샤 | Temperature measurement board and temperature measurement system |
-
1998
- 1998-05-29 JP JP16443498A patent/JP2955930B1/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100358761B1 (en) * | 1999-09-15 | 2002-10-30 | (주)울텍 | Thin Film Thermocouple within the Bonded Silicon Wafers |
| KR100377417B1 (en) * | 2000-07-24 | 2003-03-29 | (주)울텍 | Apparatus and Fabrication Method of Substrate Temperature Mesurement |
| JP2002257635A (en) * | 2001-03-06 | 2002-09-11 | Anritsu Keiki Kk | Wafer with temperature sensor |
| JP4718697B2 (en) * | 2001-03-06 | 2011-07-06 | 安立計器株式会社 | Wafer with temperature sensor |
| WO2006080423A1 (en) * | 2005-01-31 | 2006-08-03 | Bridgestone Corporation | Monitor wafer and method for monitoring wafer |
| CN104299925A (en) * | 2013-07-18 | 2015-01-21 | 技鼎股份有限公司 | Temperature measuring device for semiconductor process |
| KR20180133422A (en) | 2016-04-19 | 2018-12-14 | 도쿄엘렉트론가부시키가이샤 | Temperature measurement board and temperature measurement system |
| US11035741B2 (en) | 2016-04-19 | 2021-06-15 | Tokyo Electron Limited | Temperature measurement substrate and temperature measurement system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2955930B1 (en) | 1999-10-04 |
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