TW393744B - A semicondutor packaging - Google Patents

A semicondutor packaging Download PDF

Info

Publication number
TW393744B
TW393744B TW087118651A TW87118651A TW393744B TW 393744 B TW393744 B TW 393744B TW 087118651 A TW087118651 A TW 087118651A TW 87118651 A TW87118651 A TW 87118651A TW 393744 B TW393744 B TW 393744B
Authority
TW
Taiwan
Prior art keywords
horizontal plane
chip
level
wafer
substrate
Prior art date
Application number
TW087118651A
Other languages
English (en)
Inventor
Jian-Ping Huang
Jeng-Yuan Lai
Ruei-Meng Rau
Original Assignee
Siliconware Precision Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconware Precision Industries Co Ltd filed Critical Siliconware Precision Industries Co Ltd
Priority to TW087118651A priority Critical patent/TW393744B/zh
Priority to US09/382,742 priority patent/US6114752A/en
Application granted granted Critical
Publication of TW393744B publication Critical patent/TW393744B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29005Structure
    • H01L2224/29007Layer connector smaller than the underlying bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201Structure
    • H01L2224/32012Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205Shape
    • H01L2224/32057Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

經濟,邵中央標準局負工消費合作社印繁 1 A7 B7 五、發明説明(!) 發明領域 本發明係關於一種用於半導體封裝件,尤指一種具有 導線架以供晶片接著其上並具有散熱片之功效以提供晶片 散熱之直接途徑的半導體封裝件。 發明背景 隨著積體電路晶片上設有之如電晶體,電阻及電容等 電子元件數量的增加,積體電路晶片於運作時產生之熱量 即隨而大增,如何有效逸散積體電路晶片於運作時所產生 之熱量遂成爲半導體封裝業者在結構設計上的一大課題。 爲解決散熱問題,目前業者多係在半導體封裝件中加設一 散熱片(Heat Sink或Heat Slug),使該散熱片靠近或接抵至 積體電路晶片上,且令散熱片之一面外露出半導體封裝件, 以提供晶片產生之熱量由散熱片之傳遞而逸散至外界的途 徑。然而,散熱片之加裝會造成製程的增加,額外設備的 需要,以及製造成本的提高,同時,散熱片與晶片間易形 成有氣泡(Voids),使在烘烤步驟中之高溫環境下,往往有 因氣泡的存在而發生爆裂(Popcorn Crack)的現象。 由於加設散熱片於半導體封裝件中有上述之諸多缺點, 美國專利第5, 594, 23 4號案遂提出一種導線架以取代散熱 片之使用。該第5, 594, 234號之美國專利所揭示之導線架 10係示於第6(A)至6(C)圖,該導線架10係由位於第一水 平面A之導腳(Leadframe Leads)ll,位於低於該第一水平 面A之第二水平面B上之晶片座(Die Pad)12,以及連設於 該晶片座12邊緣並向上延伸之翼片14,15,17及18所構 本紙張尺度適用中國國家標率(CNS)A4^^ ( 2丨0Χ 297公;) 15645 (請先閱讀背面之注意事項再填寫本頁)
、1T 經濟部中央標準局員工消費合作社印聚 A7 H7 五、發明説明(2 ) 成。該晶片座12係供晶片30附著其上,且晶片座12之底 面12a在封裝完成後係外露出封裝膠體31,使該晶片30 所產生之熱量得藉該晶片座12向外界逸散。該種導線架1〇 之使用雖可免除散熱片之需要,惟晶片30係與晶片座12 完全密接,遂會因兩者接合之面積大,且兩者之熱膨脹係 數不同,而在高低溫交互出現之封裝製程中發生熱應力現 象,造成晶片30與晶片座12之接合面因有應力殘留而產 生脫層(Delamination)的問題,同時,由第6(A)圖可淸楚得 知,該晶片座12角端上位於兩相鄰翼片(如14及17)間之 部位具有縫隙,該縫隙之存在,會因晶片座12之底面12a 外露出封裝膠體31,而提供水氣浸入之通道,且因該水氣 侵入之通道甚短,故設有該導線架10之半導體封裝件在 表面黏著(SMT)之錫爐作業時,便易因高溫引發入侵水氣 之蒸發膨脹,而導致半導體封裝件產生龜裂(Crack)現象。 發明之槪沭 本發明之一目的即在提供一種能降低晶片與晶片座附 著區域發生脫層現象之機率的半導體封裝件。 本發明之另一目的在提供一種能避免水氣入侵而得避 免龜裂現象發生的半導體封裝件。 本發明之再一目的在提供一種毋須使用散熱片而仍具 有良好散熱率之半導體封裝件。 本發明之又一目的在提供一種晶片所產生之熱量得藉 由晶片座直接逸散至大氣中之半導體封裝件。 本發明之再一目的在提供一種得利用既有設備與製程 ---—---人-裝-------訂------Γ沐 > . (請先間讀背面之注意事項再填筠本頁) 本紙張尺度適用中國國家標準(CNS ) Λ4ΜΙ枯(210X297公筇) 2 15645 經濟部中央標準局負工消费合作社印製 A7 __H7 五、發明説明(3 ) 製成而無額外成本產生的半導體封裝件。 依據本發明上揭及其他目的所提供之半導體封裝件係 包括: 晶片; 供該晶片附著並與該晶片導電連接之導線架;以及包 覆該晶片與導線架之部份的封裝膠體;其中,該導線架係 具有: 多數位於第一水平面上之導腳; 位於與該第一水平面具有高度差之第二水平面上之晶 片座,以供該晶片附著其上,並在該晶片座爲晶片所附著 之區域內形成有至少一開孔,使該晶片部份附著於該晶片 座上,另一部份則裸露於該開孔中;以及 位於與該第二水平面具有高度差之第三水平面上之基 板,使該基板對應於該開孔並在其至少一對相向之側邊上 設有連接部以與該晶片座接連,且該第一水平面至第三水 平面之距離係設爲該導線架爲封裝膠體包覆後,該基板之 底面得外露出該封裝膠體外。 該第二水平面得低於或高於該第一水平面。當該第二 水平面低於第一水平面時,該第三水平面亦低於第二水平 面;反之,當該第二水平面高於第一水平面時,該第三水 平面亦高於第二水平面。 該開孔之總投影面積得大於或等於該基板之面積,並 無特定限制》 圖式簡單說明 (諳先閱讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準(CNS ) Λ4^格(210X297公筇) 3 15645 A 7 H7 五、發明説明(4 ) 第1圖係本發明第一實施例之導線架之正視圖; 第2圖係第1圖沿2-2線之剖面圖; 第3圖係本發明第一實施例之導線架設於半導體封裝 件中之剖面示意圖; 第4圖係本發明第二實施例之導線架設於半導體封裝 件中之剖面示意圖; 第5圖係本發明第三實施例之導線架之正視圖; 第6(A)圖係設有習用導線架之半導體封裝件之正視 圖; 第6(B)圖係第6(A)圖沿6(B)-6(B)線之剖面圖;以及 第6(C)圖係第6(A)圖沿6(C)-6(C)線之剖面圖。 官施例 經濟部中央標準局貝工消費合作社印裝 (請先閱讀背而之注意事項再填寫本頁) 如第1及2圖所示,本發明第一實施例所用之導線架 4係由多數位於第一水平面40之導腳41,位於第二水平面 42之晶片座43,以及位於第三水平面44之基板45所構成, 其中,該第二水平面42係低於第一水平面40,第三水平 面44低於第二水平面42,且該基板45係以設於相對側邊 450,452上之連接部454,455連接至該晶片座43上。同 時,該晶片座43之中間部位並開設有一方形開孔430,使 該方形開孔43 0之投影面積大於基板45之面積;且該晶片 座43鄰接該開孔43 0之部位,係形成晶片附著區域431 (如 第1圖虛線所框示之區域),以供晶片5附著其上,如第3 圖所示,由於晶片5之底面50僅有小部份面積與晶片座43 之晶片附著區域431接著,而晶片5之大部份面積得以裸 15645 4 本紙張尺度適用中國國家標準(CNS ) A4Tm ( 210Χ29^:"Ηη 經濟部中央標準局負工消费合作社印聚 A7 B7 _ 五、發明説明(5 ) 露於該開孔43 0中,故使晶片5與晶片座43間之黏著處發 生脫層現象之可能性大幅降低。 如第3圖所示,晶片5以銀膠6附著至該晶片座43之 晶片附著區域431後,係以銲接至晶片5上之金線8與導 腳41之內導腳410導電地連接,接而以封裝樹脂包覆該晶 片5,內導腳410,及部份基板45,使基板45之底面458 得外露出由封裝樹脂固化成形之封裝膠體9,晶片5產生 之熱量遂得由晶片座43而基板45之途徑逸散至大氣中;因 而,本發明第一實施例之導線架4之深度,即大致相當於 第一水平面40至第三水平面44間之距離,須足以在封裝 完成後,該基板45之底面45 8得外露出封裝膠體9»同時, 晶片5係爲封裝膠體9所妥適包覆,其與導線架4之附著 部位亦不會直接與外界接觸,故在水氣入侵之路徑甚長的 情況下,入侵水氣因受熱蒸發膨脹而導致所製成半導體封 裝件發生龜裂的可能性遂得降低。 如第4圖所示者爲本發明第二實施例,其結構與前述 之第一實施例大致相同。其不同處在於該導線架4a之第 —水平面40a係低於第二水平面42a,而第二水平面42a 低於第三水平面44a,使晶片座43 a位於導腳41a之上方, 而基板45a位於晶片座43a之上方,故在以封裝樹脂包覆 導線架4a及晶片5a後,該基板45a之頂面459a係外露於 封裝膠體9外,換言之,該第二實施例之結構恰與第一實 施例所述者呈上下倒置之狀況。 如第5圖所示者爲本發明之第三實施例,其結構大致 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210X297公H ~ 5 15645 (諳先閱讀背面之注意事項再填ϊ?τ本頁) 裝- *1Τ -Λ A7 H7 五、發明説明(6 ) 上係同於前述之第一實施例。其不同處在於該基板45b之 四側邊450b, 451b,452b及453b均連設有連接部454b,455b, 45 6b及457b,以藉之將基板45b連接至晶片座43b上。爲 使封裝樹脂得流入並充滿位於晶片座43b開孔430b至基 板45b間之空間,各連接部454b,455b,456b及457b彼此 間均不連結以形成供封裝樹脂流入之通道,同時,各連接 部454b, 455b,456b及457b上亦可開設有流通孔(未圖示) 以做爲封裝樹脂流通之孔道。 以上所述者,僅爲用以例釋本發明之特點及功效的部 份具體實施例,並非用以限制本發明之可實施範疇,舉凡 一切未背離本發明掲示之精神與原理下所完成之等效改變 或修飾,均應仍爲下述之專利範圍所涵蓋》 圖式符號說明 (請先閲讀背而之注意事項再填寫本頁) 經濟部中央標準局員工消费合作社印裝 4, 4a, 4b 導線架 5, 5a 晶片 6 銀膠 8 金線 9 封裝膠體 10 導線架 11 導線 12 晶片座 12a 底面 14, 15, 17, 18 翼片 30 晶片 本紙張尺度適用中國國家標準(CNS ) Λ4^彳Μ 210X297^^ , 6 15645 五、發明説明(7 ) A1 H7 經濟部中央標準局員工消費合作社印¾ 3 1 封裝膠體 40, 40a 第一水平面 41, 41a 導腳 42, 42a 第二水平面 43, 43a, 43b 晶片座 44, 44a 第三水平面 45, 45a, 45b 基板 50 底面 410 內導腳 430, 430b 開孔 431 晶片附著區域 450, 450b 側邊 451b, 452, 452b 側邊 453b 側邊 454, 454b 連接部 455, 455b 連接部 456b, 457b 連接部 458 底面 459a 頂面 A 第一水平面 B 第二水平面 (請先閱讀背面之注意事項再填寫本頁) 裝.
*1T 本紙張尺度適用中國國家標準(CNS )八4岘梢(210X297公疗) 7 15645

Claims (1)

  1. 393744 A8 B8 C8 D8 六、申請專利範圍 1. 一種用於半導體封裝件,係包栝: 晶片; (請先閱讀背面之注意事項再填寫本頁) 供該晶片附著與該晶片導電連接之導線架;以及 包覆該晶片與導線架之部份的封裝膠體;其中該心線 架係具有: 多數位於第一水平面上之導腳;‘ 位於與該第一水平面具有高度差之第二水平面上 之晶片座,以供該晶片附著其上,並在該晶片座爲晶片 所附著之區域內形成有至少一開孔,使該晶片一部份 附著於該晶片座上,另一部份則裸筚於該開孔中;以及 位於與該第二水平面具有高度差之第三水平面上 之基板,使該基板對應於該開孔並在其至少一對相向 之側邊上設有連接部以與該晶片座連接,且該第一水 平面至該第三水平面之距離係設爲該導線架爲封裝膝 體包覆後,該基板之底面得外露出該封裝膠體外。 2. 如申請專利範圍第1項之半導體封裝件,其中,該第二 水平面低於第一水平面時,該第三水平面亦低於第二 水平面。 經濟部中央標準局貝工消費合作社印製 3. 如申請專利範圍第1項之半導體封裝件,其中,該第二 水平面高於第一水平面時,該第三水平面亦高於第二 水平面。 4. 如申請專利範圍第1項之半導體封裝件,其中,該基板 得以連設於其各側邊上之連接部與該晶片座連接,且 任兩相鄰之連接部間形成有可供封裝樹脂流經之流通 15645 8 本紙張尺度逋用中國國家標準(CNS ) Λ4規格(210><29·?公缝) 393744 纟88 C8 D8 六、申請專利範圍 孔。 5.如申請專利範圍第4項之半導體封裝件,其中,該流通 孔 該 中 其 件 0 裝積 封面 體之. 。 導板 上半基 部之該 接項於 連 1 小 該第不 各圍係 於範積 設利面 開專影 可請投 復申總 孔如之 : { S ^^1 m ^^^1 ULr ^^^1 nn i ^^^1 ml nn In I 、mi 姿 - i h. (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210 X 297公釐) 9 15645
TW087118651A 1998-11-10 1998-11-10 A semicondutor packaging TW393744B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW087118651A TW393744B (en) 1998-11-10 1998-11-10 A semicondutor packaging
US09/382,742 US6114752A (en) 1998-11-10 1999-08-25 Semiconductor package having lead frame with an exposed base pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087118651A TW393744B (en) 1998-11-10 1998-11-10 A semicondutor packaging

Publications (1)

Publication Number Publication Date
TW393744B true TW393744B (en) 2000-06-11

Family

ID=21631948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087118651A TW393744B (en) 1998-11-10 1998-11-10 A semicondutor packaging

Country Status (2)

Country Link
US (1) US6114752A (zh)
TW (1) TW393744B (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143981A (en) 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
KR20010037247A (ko) * 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
TW447096B (en) * 2000-04-01 2001-07-21 Siliconware Precision Industries Co Ltd Semiconductor packaging with exposed die
US6385326B1 (en) * 2000-04-03 2002-05-07 Jack Peng Quick-detachable structure for on-wall speaker panel
US7042068B2 (en) 2000-04-27 2006-05-09 Amkor Technology, Inc. Leadframe and semiconductor package made using the leadframe
US6440779B1 (en) * 2001-05-16 2002-08-27 Siliconware Precision Industries Co., Ltd. Semiconductor package based on window pad type of leadframe and method of fabricating the same
US20030178719A1 (en) * 2002-03-22 2003-09-25 Combs Edward G. Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package
US20040000703A1 (en) * 2002-06-27 2004-01-01 Jui-Chung Lee Semiconductor package body having a lead frame with enhanced heat dissipation
US6905914B1 (en) 2002-11-08 2005-06-14 Amkor Technology, Inc. Wafer level package and fabrication method
US7723210B2 (en) 2002-11-08 2010-05-25 Amkor Technology, Inc. Direct-write wafer level chip scale package
US7102484B2 (en) * 2003-05-20 2006-09-05 Vishay Dale Electronics, Inc. High power resistor having an improved operating temperature range
US7368320B2 (en) * 2003-08-29 2008-05-06 Micron Technology, Inc. Method of fabricating a two die semiconductor assembly
JP2005327830A (ja) * 2004-05-13 2005-11-24 Mitsubishi Electric Corp 半導体マイクロデバイス
US7495325B2 (en) * 2005-05-05 2009-02-24 Stats Chippac, Ltd. Optical die-down quad flat non-leaded package
US8138586B2 (en) * 2005-05-06 2012-03-20 Stats Chippac Ltd. Integrated circuit package system with multi-planar paddle
SG131789A1 (en) * 2005-10-14 2007-05-28 St Microelectronics Asia Semiconductor package with position member and method of manufacturing the same
US7572681B1 (en) 2005-12-08 2009-08-11 Amkor Technology, Inc. Embedded electronic component package
US7902660B1 (en) 2006-05-24 2011-03-08 Amkor Technology, Inc. Substrate for semiconductor device and manufacturing method thereof
US7968998B1 (en) 2006-06-21 2011-06-28 Amkor Technology, Inc. Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package
JP2008085002A (ja) * 2006-09-27 2008-04-10 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US7952834B2 (en) * 2008-02-22 2011-05-31 Seagate Technology Llc Flex circuit assembly with thermal energy dissipation
JP5149854B2 (ja) * 2009-03-31 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置
US8796561B1 (en) 2009-10-05 2014-08-05 Amkor Technology, Inc. Fan out build up substrate stackable package and method
US8937381B1 (en) 2009-12-03 2015-01-20 Amkor Technology, Inc. Thin stackable package and method
US9691734B1 (en) 2009-12-07 2017-06-27 Amkor Technology, Inc. Method of forming a plurality of electronic component packages
US8324511B1 (en) 2010-04-06 2012-12-04 Amkor Technology, Inc. Through via nub reveal method and structure
US8294276B1 (en) 2010-05-27 2012-10-23 Amkor Technology, Inc. Semiconductor device and fabricating method thereof
US8440554B1 (en) 2010-08-02 2013-05-14 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8487445B1 (en) 2010-10-05 2013-07-16 Amkor Technology, Inc. Semiconductor device having through electrodes protruding from dielectric layer
US8669777B2 (en) 2010-10-27 2014-03-11 Seagate Technology Llc Assessing connection joint coverage between a device and a printed circuit board
US8791501B1 (en) 2010-12-03 2014-07-29 Amkor Technology, Inc. Integrated passive device structure and method
US8390130B1 (en) 2011-01-06 2013-03-05 Amkor Technology, Inc. Through via recessed reveal structure and method
US8552548B1 (en) 2011-11-29 2013-10-08 Amkor Technology, Inc. Conductive pad on protruding through electrode semiconductor device
US9129943B1 (en) 2012-03-29 2015-09-08 Amkor Technology, Inc. Embedded component package and fabrication method
US9048298B1 (en) 2012-03-29 2015-06-02 Amkor Technology, Inc. Backside warpage control structure and fabrication method
JP6354285B2 (ja) * 2014-04-22 2018-07-11 オムロン株式会社 電子部品を埋設した樹脂構造体およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5479563A (en) * 1977-12-07 1979-06-25 Kyushu Nippon Electric Lead frame for semiconductor
JPS61174657A (ja) * 1985-01-29 1986-08-06 Sumitomo Metal Mining Co Ltd 半導体装置用リ−ドフレ−ム
US4857989A (en) * 1986-09-04 1989-08-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPS63150951A (ja) * 1986-12-15 1988-06-23 Toshiba Corp リ−ドフレ−ム
US5214307A (en) * 1991-07-08 1993-05-25 Micron Technology, Inc. Lead frame for semiconductor devices having improved adhesive bond line control

Also Published As

Publication number Publication date
US6114752A (en) 2000-09-05

Similar Documents

Publication Publication Date Title
TW393744B (en) A semicondutor packaging
US10204848B2 (en) Semiconductor chip package having heat dissipating structure
US6559525B2 (en) Semiconductor package having heat sink at the outer surface
TW319905B (zh)
TW411595B (en) Heat structure for semiconductor package device
US6650006B2 (en) Semiconductor package with stacked chips
US6876069B2 (en) Ground plane for exposed package
US6429513B1 (en) Active heat sink for cooling a semiconductor chip
US20020109226A1 (en) Enhanced die-down ball grid array and method for making the same
JPH07221218A (ja) 半導体装置
JPH08213536A (ja) パッケージの一面に露出した半導体ダイ取付けパッドを有するダウンセットされたリードフレームおよびその製造方法
TW201906026A (zh) 晶片封裝方法及封裝結構
JP2008085002A (ja) 半導体装置およびその製造方法
US4947237A (en) Lead frame assembly for integrated circuits having improved heat sinking capabilities and method
TW587325B (en) Semiconductor chip package and method for manufacturing the same
TWI660471B (zh) 晶片封裝
JPH08264688A (ja) 半導体用セラミックパッケージ
TW200522298A (en) Chip assembly package
JPH07112029B2 (ja) 電子部品冷却装置
CN217280757U (zh) 用于小型表面安装器件的半导体封装结构
TWI236752B (en) Semiconductor package with heat spreader
JP2690248B2 (ja) 表面実装型半導体装置
CN218957731U (zh) 用于集成电路的封装
JP3058142B2 (ja) 半導体装置とその製造方法
JPH10294403A (ja) 半導体装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees