、發明説明（1) 本發明整體而言是關於半導體裝置的製造，特別是 指包含半導艘晶®切片程序的半導體製造過程及其所用設 備》 於半導體裝置製造過程中，絕大多數半導體裝置通 常都在單-半導體晶圓上形成，如此形成的半導艘晶圓及 該半導趙裝置藉由切片程序分成獨立的半導想晶片。該切 片程序包含了由切片鋸執行的鋸開過程。 在此切片程序中，實務上通常藉由黏著帶來保護半 導體裝置所在的半導體晶圓，如此半導體裝置不會因切片 鋸的鋸開過程而受損。執行鋸開過程時要使切片鋸作用所 形成的切片槽深度超過半導體晶圓厚度（全斷切片），或使 切片槽深度小於晶圓厚度（半斷切片）。此外，實務上採用 一種黏著帶以利於半導體晶圓分為獨立半導體切片後的移 除，黏著帶的帶基底上有_uv(紫外線)_硬化型的黏著層 。帶基底通常由聚氣乙烯樹脂或聚烴樹脂。 在鋸開程序後或鋸開程序中，要執行藉由喷灑如水 的洗濯液來移除鋸開過程產生的塵埃粒之淨化程序。此外 ，在淨化程序後要立即接著執行主乾燥程序，藉由空氣喷 射來除去洗濯液。 除了前敘的主乾燥程序外，傳統的切片程序，特別 是全斷過程中，尚須執行副乾燥程序以移除切片槽内的水 。在切片鋸開半導體晶圓時產生的切片槽中，應注意要把 帶基底上的黏著層露出》副乾燥程序的執行是鑒於當在黏 著層被如水等含有氧的媒介物覆蓋之情形下進行樹脂的2. Description of the Invention (1) The present invention as a whole relates to the manufacture of semiconductor devices, in particular to the semiconductor manufacturing process including semiconducting wafers® slicing program and the equipment used in it. In the manufacturing process of semiconductor devices, most semiconductor devices Usually formed on a single-semiconductor wafer, the semi-conductor wafer and the semi-conductor device thus formed are separated into individual semi-conductor wafers by a slicing process. The slicing procedure includes a sawing process performed by a slicing saw. In this slicing procedure, the semiconductor wafer on which the semiconductor device is located is usually protected by adhesion so that the semiconductor device is not damaged by the sawing process of the dicing saw. When performing the sawing process, the depth of the dicing groove formed by the dicing saw action exceeds the thickness of the semiconductor wafer (full-cut dicing), or the depth of the dicing groove is less than the thickness of the wafer (half-cut dicing). In addition, in practice, an adhesive tape is used to facilitate the removal of the semiconductor wafer after it is divided into independent semiconductor slices. The tape substrate of the adhesive tape has a _uv (ultraviolet) _ hardening type adhesive layer. The tape substrate is usually made of a polyethylene gas resin or a hydrocarbon resin. After or during the sawing process, a cleaning process to remove dust particles generated by the sawing process by spraying a washing liquid such as water is performed. In addition, the main drying process should be performed immediately after the purification process, and the washing liquid should be removed by air spray. In addition to the main drying process described above, the traditional slicing process, especially during the full-break process, requires a sub-drying process to remove water from the slicing tank. In the dicing groove generated when dicing sawing semiconductor wafers, care should be taken to expose the adhesive layer on the tape substrate. The sub-drying procedure is performed in view of the situation where the adhesive layer is covered with an oxygen-containing medium such as water Resin
經濟部中央標準局員工消費合作社印Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs
尺度適用中國國家襟準 uv-硬化時’黏著層^.硬化之情形將不甚理想。因此， 實務上傳統的切片程序中副乾燥程序是在乾燥的氮氣環項 下執行至少30分鐘》 如此，在傳統切片程序中，若將一個6英吋的半導通 晶圓分為-個個5毫米Χ5毫米的半導艘晶片，將半導艘晶 圓鑛開為半導“片大約要5分鐘，淨化程序及主乾燥程 序大約要1分鐘副乾燥程序大約要30分鐘或以上，以人工 方式將半導趙晶片自切片_至附有ϋ著帶的UV·硬化設 備大約要1分鐘，於Uv_硬化設借中將黏著層硬化在帶上 大約要1分鐘。此外，將uv硬化設備 於刪上可能還須一些時間。 晶片置 如此，我們可瞭解到傳統的半導雜裝置製造過程， 由㈣片程序中存有副乾燥程序，會有產量低的困難在。 另方面，當除去副乾燥程序，相對於切片槽部分的黏著 帶會保持點黏的，而當半導雜晶片自帶上取起時，其上可 能會附有未硬化，具黏性的點著劑》如此’在如封裝程序 等後續作業時，將使生產量品質惡化。 本發明的目標大想上是為半導艘裝置的製造及其所 用設備提供新奇及有用的方法，來成功地解決迄此為止所 提到的問題0 ， 置的=:程另一:比較明確的目標是提供一種半導趙裝 :製造過程’而可以成功地節省將半導趙晶圓分成獨立 半導趙晶片所須的時間，亦即節省了金錢。 本發明另-個目標是藉減少將切片程料自一共同 (CNS ) A4規格（210X297公釐）The scale applies to China's national standard uv-hardening ‘adhesive layer ^. Hardening will not be ideal. Therefore, in practice, in the traditional slicing process, the sub-drying process is performed under a dry nitrogen ring for at least 30 minutes. So, in the traditional slicing process, if a 6-inch semi-conducting wafer is divided into-5 Mm × 5mm semi-conductor wafers, the semi-conductor wafers are turned into semi-conductor wafers, which takes about 5 minutes, the purification process and the main drying process take about 1 minute, and the sub-drying process takes about 30 minutes or more, manually. It takes about 1 minute to slice the semiconducting wafer from the _ to the UV curing device with the adhesive tape, and it takes about 1 minute to harden the adhesive layer on the tape in the Uv_ curing device. In addition, the UV curing device is It may take some time to delete it. With the wafer set in this way, we can understand that the traditional semiconducting device manufacturing process, because there is a sub-drying process in the wafer process, there will be difficulties in low yield. On the other hand, when the sub-system is removed, During the drying process, the adhesive tape relative to the section of the slicing groove will remain a little sticky. When the semiconducting wafer is picked up from the tape, it may be attached with an unhardened, sticky spotting agent. After packaging procedures, etc. When the operation is continued, the quality of production will be deteriorated. The object of the present invention is to provide novel and useful methods for the manufacture of semi-ships and the equipment used to successfully solve the problems mentioned so far. , == Cheng Cheng: A more specific goal is to provide a semi-conductor Zhao equipment: manufacturing process, which can successfully save the time required to divide a semi-conductor Zhao wafer into independent semi-conductor Zhao wafers, which saves money. Another object of the present invention is to reduce the slicing process from a common (CNS) A4 specification (210X297 mm).
經濟部中央標準局員工消費合作社印裝 A7 * ____B7 五、發明説明（3 ) 半導想晶圓分成的半導體晶片由鋸開組件移至UV_硬化組 件以將半導體晶片固定於具彈性的黏著帶上的過程所產生 的損害情形，來改善半導體晶片的產量。 本發明另一個目標為提供製造半導體裝置的方法， 其步驟如下： 將其上面附有紫外線一硬化型黏著層的黏著帶覆蓋 於半導體基體的表面上； 將該半導體基體鋸開成獨立的半導體晶片，使該黏 著帶覆於該半導體基體； 敷施乾燥氣體於該黏著帶，使該黏著帶上附有該半 導體晶片； 敷施紅外線於該黏著帶，使該黏著帶上附有該半導 體晶片； 將該黏著層硬化於該黏著帶上，藉照射紫外線於該 黏著帶，使該黏著帶上附有該半導體晶片； 敷施該乾燥氣體，該紅外線及硬化該黏著帶的該等 步驟原則上是同時進行。 本發明另-項目標是提供半導體裝置的裝造設備， 包括： 紫外射線源； 環繞該紫外線源的燈室；該燈室為鏡式表面； 該燈至附有-窗孔，該孔是用以支擇位於黏著帶上 的半導體晶片； 該燈室附有-紅光射線源，該紅外線源位於該燈室 I. f .裝------訂------ (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 * ____B7 V. Description of the Invention (3) The semiconducting wafers are divided into semiconductor wafers from saw-opened components to UV-hardened components to fix the semiconductor wafers to the elastic adhesive tape This process can cause damage to improve the yield of semiconductor wafers. Another object of the present invention is to provide a method for manufacturing a semiconductor device, whose steps are as follows: covering the surface of a semiconductor substrate with an adhesive tape on which an ultraviolet-curing type adhesive layer is attached; sawing the semiconductor substrate into an independent semiconductor wafer, Applying the adhesive tape to the semiconductor substrate; applying a dry gas to the adhesive tape to attach the semiconductor wafer to the adhesive tape; applying infrared rays to the adhesive tape to attach the semiconductor wafer to the adhesive tape; The adhesive layer is hardened on the adhesive tape, and the semiconductor wafer is attached to the adhesive tape by irradiating ultraviolet rays on the adhesive tape; applying the dry gas, the infrared rays and the steps of hardening the adhesive tape are in principle at the same time get on. Another object of the present invention is to provide semiconductor device manufacturing equipment, including: an ultraviolet source; a lamp room surrounding the ultraviolet source; the lamp room is a mirror-like surface; the lamp is attached with a-window hole, and the hole is used for The semiconductor wafer located on the adhesive tape is selected; the lamp room is attached with a red light source, and the infrared source is located in the lamp room. F. Installation ------ Order ------ (Please first (Read the notes on the back and fill out this page)
經濟部中央標準局員工消费合作社印製 A7 B7 ' 五、發明説明（4 ) 中； 置有一空氣喷嘴，該空氣喷嘴可敷施乾燥氣體於位 在該窗孔上之該半導體基體。 依據本發明，除去相對於切片槽的黏著帶上水份與 溼氣之乾燥程序是與紫外線硬化橡膠之硬化程序同時進 行，而半導體裝置的生產量會獲得改善。當黏著層的硬化 是在沒有水份與溼氣的環境下進行，黏著層的硬化將可順 利進行，而且可成功及有效地避免因附著於半導體晶片上 部分硬化黏著層造成的半導體裝置產量減少的問題。此外 ’由於半導體基體的鋸斷過程是在黏著帶保護下進行，半 導體晶片在切片程序中的機械性傷害將可減至最低程度。 本發明另一項目標是提供半導體裝置製造的方法， 步驟如下： 在其上有紫外線-硬化型黏著層的黏著帶復於半導趙 基體的表面； 將該半導體基體固定於其内有紫外射線源的燈室開 孔處，使該半導體基體覆於該等黏著帶下； 將該半導體基體鋸為獨立的半導體晶片，而該半導 體基體置於該等燈室之該等窗孔處。 本發明另一項目標是提供半.導體裝置製造的設備， 包括： 紫外射線源； 環繞該紫外線源的燈室，該燈室為鏡式表面。 該燈室附有一窗孔； I.-------·裝------訂------^银 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 五、發明説明（ 該燈室附有-真空卡盤以覆蓋該等窗孔該真空卡 盤是用以支持其上的半導艘基趙使該半導艘基趙覆於該等 黏著帶下； 該真空卡盤是由可透該等紫外線源發出的紫外線之 材質構成。 如本發明之半導體基體切片程序是在紫外線源的燈 室内進行。因此，吾省去將切好的半導體晶片送至紫 外線源的程序’則在程中，由於半導體晶片上重力 引起的帶向下膨脹所造成之損害將可成功地去除。 本發明其他的目標及進一步的特色在伴隨附圚閲讀 時將會—顯現》 第1圖為如本發明第一個實施例的切片設備結構； 第2圖為如本發明第二個實施例的切片設備結構； 第3圏為顯示附於半導體晶片的黏著劑量及施於第1 及2圖硬化組件上乾燥氮氣流率之關係圚； 第4圖為顯示晶圓乾燥所需時間與施於第1及2圖硬化 組件上乾燥氮氣流率之關係圖； 第5Α及5Β囷為說明當半導體晶片與黏著帶傳送時發 生的問題； 第6圖為如本發明在鋸斷步驟中的第3個實施例之切 片設備結構； 第7圖為如本發明在切片步驟中的第3個實施例之切 片設備結構； 第8圖為氧化鋁之光譜吸收圖。 本紙張通用中_家標隼（CNS ) Α4· ( 2獻撕公瘦〉 —(-裝-- (請先閲讀背面之注意事項再填寫本頁) 、?τ .1 B7 五、發明説明（6 ) 〔第一個實施例〕 第1圖為本發明用在半導體晶圓切片之第1個實施例 的切片設備結構。 由第1囷，切片設備1包含了鋸開由黏著帶6保護之半 導體晶圓的鋸斷組件，及藉紫外線將黏著層6”附於黏著帶 6上之硬化組件。特別一提的是黏著帶6除了前述的黏著層 6”外，尚包括了通常由聚氣乙烯樹脂或聚烴樹脂構成的帶 基底。 雜斷組件2包含其上附有真空卡盤7的切片台，其中 真空卡盤7藉敷施真空於帶6上，來將其上的半導體晶圓4 覆蓋於黏著帶6下。在真空卡盤7上，配有一旋轉切片鋸8 及敷施冷卻液18於切片鋸8與半導體晶圓4的冷卻水喷嘴17 。特別一提的是架在真空卡盤7上的帶6應使其穩穩地拉緊 在框架5上。 在操作過程中，切片鋸8是以高速在旋轉，而切片台 與其上的真空卡盤7以如第1圖中的箭頭方向前後移動。此 外’切片鋸8可以如第1圖中的箭頭方向做上下的鉛直移動 〇 由於旋轉切片鋸8及半導體晶圓4的相對運動，晶圓4 可沿先畫好的畫線器線段切片，而在半導體晶圓4上相對 於畫線器線段部分會形成切片槽。在全斷過程，於黏著層 形成所在的黏著帶表面會因切片槽的產生而外露。由於黏 著帶6的黏滞性，使如上所述在帶6上形成的半導體晶片依 想要的行列方式產生’也因此成功地避免斷半導趙晶片散 9 本紙張尺度適用巾國國家揉準（CNS )八4祕（21〇χ297公釐） A7 B7 經濟部中央標準局負工消費合作社印袈 五、發明説明（ 布的問題》 在前述的切片或鋸開程序中，切片鋸8是由如先前所 說由喷射喷嘴17喷灑在切片鋸8上的冷卻液18來冷卻，其 中冷卻液可能是淨化過的水或稀釋過的蘇打水。冷卻液18 冷卻了切片鋸8外，也冷卻了半導體晶圓，此外，冷卻液 亦衝走了因切斷半導體晶圓4產生的塵埃粒》 另一方面，硬化組件3包括了發出UV射線12的UV燈13 及附有環繞燈13的反射鏡之燈室16»燈室16尚包括一個可 將UV燈13產生的UV射線送至燈室16外的開口。 如此’在半導體晶圓4完成鋸開後，架框5上的黏著 帶6將由一圖上未顯示的運載機制自錯斷組件2的真空卡盤 7卸下。如此卸下的黏著帶6其上有由鑛開過程形成的半導 體晶片’而該帶將置於一圖上未顯示的卡匣内。卡医接著 由機械人送入硬化組件3，而附於架框5的黏著帶6則置於 前述的燈室16開孔。如此架於燈室16開孔的帶6，其上附 有如前所述由鋸開過-程形成的半導體晶片，其中帶6上的 半導艘晶片由切片槽9而彼此隔開。而前面已提過，黏著 帶6的黏著層6”依切片槽9來外露的》 除了前述的UV燈13’特別一提的是硬化組件3的燈室 16尚包括了與UV燈13相鄰、發出紅外射線的紅外線燈15 。因此，藉由同時激發紅外線燈15與UV燈13，可藉由紅 外線燈15放出的紅外射線14產生的熱能來移除切片槽的漏 氣或水份，其中藉由同時激發UV燈13，前述的黏著帶6乾 燥與將黏著層6”硬化於帶6上可同步進行。由紅外線燈15 I.-------f 裝------訂------f,i (請先閲讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標準局貝工消費合作社印装 五、發明説明（8 ) 產生帶6的熱能對移除切片槽9的水份或濕氣特別有效。 此外’第1圖的結構，除了紅外線燈15，還包括了在 燈室16上的空氣噴嘴u。空氣喷嘴丨丨面向帶6，而其上附 有半導體晶片的帶6架設在前述的燈室16開孔。藉空氣喷 嘴11來敷施乾燥氣體10於帶6以移除切片槽9的水份或濕氣 ’乾燥氣艘以如氮氣等的乾燥鈍性氣艟較佳。 舉例來說’經由噴嘴n以每分鐘10升的流率來敷施乾 燥氮氣’並以輻射能每平方公分45〇毫瓦激發UV燈13，並 同時激發紅外線燈15，使帶6加熱達90〜140°C，可使黏著 層6”的硬化在1〜5秒内完成❶如此，則不需要副乾燥程序 〇 為了促進帶6的乾燥，我們希望將帶6加熱至90»c以上 ，但鑑於以聚烯烴做帶基底6,的帶$之熱電阻，溫度必須 低於140°C。 在本例中’第1圖的切片設備用來將直徑6叫·的半導 體晶圓切為每個5 mmX5 mm的半導體晶片，由鋸斷組件2 來鋸開晶圓大概只要5分鐘，將晶圓由鋸斷組件2運至硬化 組件3要數秒鐘，而硬化組件3的硬化只要數秒。如此切 片程序在非常短的時間内完成，而半導體裝置的產量將獲 得實質地改善。因為晶圓的錄開過程是在晶圓於黏著帶的 保護下進行，因此由於鋸斷程序造成半導體晶片損害的情 形將可被有效的排除。 〔第二實施例〕 第2®顯示如本發明第二個實施例切片設備21的結構 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 丨.. 「裝 訂 ^ (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumers 'Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7' 5. In the description of the invention (4); an air nozzle is provided, and the air nozzle can apply dry gas to the semiconductor substrate located on the window hole. According to the present invention, the drying process of removing moisture and moisture from the adhesive tape relative to the dicing groove is performed at the same time as the curing process of the ultraviolet curing rubber, and the throughput of the semiconductor device is improved. When the hardening of the adhesive layer is performed in an environment free of moisture and moisture, the hardening of the adhesive layer can proceed smoothly, and it can successfully and effectively avoid a reduction in the yield of the semiconductor device caused by the partially hardened adhesive layer attached to the semiconductor wafer. The problem. In addition, because the sawing process of the semiconductor substrate is performed under the protection of an adhesive tape, the mechanical damage of the semiconductor wafer during the slicing process can be minimized. Another object of the present invention is to provide a method for manufacturing a semiconductor device. The steps are as follows: An adhesive tape having an ultraviolet-curable adhesive layer thereon is applied to the surface of a semiconductor substrate; and the semiconductor substrate is fixed with ultraviolet rays therein. The opening of the lamp room of the source covers the semiconductor substrate under the adhesive tapes; the semiconductor substrate is sawn into independent semiconductor wafers, and the semiconductor substrate is placed at the window holes of the lamp rooms. Another object of the present invention is to provide equipment for manufacturing a semi-conductor device, including: a source of ultraviolet rays; a lamp room surrounding the source of ultraviolet rays, the lamp room having a mirror-like surface. The lamp room is attached with a window hole; I .------- · Installation ------ Order ------ ^ Silver (Please read the precautions on the back before filling this page) Central of the Ministry of Economy Printed by the Consumer Bureau of the Standards Bureau. 5. Description of the invention (the lamp room is attached with a vacuum chuck to cover the window holes. The vacuum chuck is used to support the semi-conductor ship. Covered under the adhesive tape; The vacuum chuck is made of a material that can transmit ultraviolet rays emitted by the ultraviolet sources. For example, the semiconductor substrate slicing procedure of the present invention is performed in a lamp room of the ultraviolet source. Therefore, I will save The procedure of sending the cut semiconductor wafer to an ultraviolet source 'is that during the process, the damage caused by the downward expansion of the tape due to the gravity on the semiconductor wafer can be successfully removed. Other objects and further features of the present invention are accompanied by将会 Will read—appear. Figure 1 shows the structure of a slicing device as in the first embodiment of the present invention; Figure 2 shows the structure of a slicing device as in the second embodiment of the present invention; and Figure 3 is a display attached to a semiconductor Adhesive dosage of wafers and applied to hardened components of Figures 1 and 2 The relationship between the dry nitrogen flow rate 氮气 Figure 4 shows the relationship between the time required for wafer drying and the dry nitrogen flow rate applied to the hardened components shown in Figures 1 and 2; Figures 5A and 5B 说明 show when the semiconductor wafer and the adhesion Problems that occur when the belt is conveyed; FIG. 6 is the structure of a slicing device according to the third embodiment of the present invention in the sawing step; FIG. 7 is a slicing device according to the third embodiment of the present invention in the slicing step. Structure; Figure 8 is the spectral absorption chart of alumina. This paper is commonly used _ house standard 隼 (CNS) Α4 · (2 torn public thin) — (-pack-(Please read the precautions on the back before filling in this Page),? Τ.1 B7 V. Description of the Invention (6) [First Embodiment] The first figure is the structure of a slicing device according to the first embodiment of the present invention for dicing semiconductor wafers. The slicing device 1 includes a sawing device for sawing off a semiconductor wafer protected by an adhesive tape 6 and a hardened component for attaching the adhesive layer 6 "to the adhesive tape 6 by ultraviolet rays. The special mention is that the adhesive tape 6 is in addition to the aforementioned In addition to the adhesive layer 6 ", it also includes The miscellaneous component 2 includes a slicing table with a vacuum chuck 7 attached thereto, wherein the vacuum chuck 7 applies a vacuum to the tape 6 to cover the semiconductor wafer 4 thereon to the adhesive tape 6. Next, the vacuum chuck 7 is provided with a rotary dicing saw 8 and a cooling water nozzle 17 for applying a cooling liquid 18 to the dicing saw 8 and the semiconductor wafer 4. A special mention is made of a belt mounted on the vacuum chuck 7. 6 should be firmly tightened on the frame 5. During the operation, the slicing saw 8 rotates at high speed, and the slicing table and the vacuum chuck 7 on the slicing table 8 are moved forward and backward in the direction of the arrow in FIG. In addition, the “slicing saw 8 can be vertically moved up and down as indicated by the arrow in the first figure. Because of the relative movement of the rotary slicing saw 8 and the semiconductor wafer 4, the wafer 4 can be sliced along the previously drawn line segment, and A slicing groove is formed on the semiconductor wafer 4 with respect to the line segment portion of the tracer. During the full break process, the surface of the adhesive tape where the adhesive layer is formed will be exposed due to the generation of the slicing groove. Due to the stickiness of the adhesive tape 6, the semiconductor wafers formed on the tape 6 as described above are generated in a desired manner. Therefore, the semiconductor chip is successfully avoided. This paper size is suitable for countries and countries. (CNS) Eighty-four secrets (21 × 297 mm) A7 B7 Seal of the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (problem of cloth) In the aforementioned slicing or sawing procedure, the slicing saw 8 is made by As mentioned earlier, the cooling liquid 18 sprayed on the slicing saw 8 by the spray nozzle 17 is used for cooling. The cooling liquid may be purified water or diluted soda water. The cooling liquid 18 cools the outside of the slicing saw 8 and also cools it. In addition, the cooling liquid also washed away the dust particles generated by cutting the semiconductor wafer 4. On the other hand, the hardened component 3 includes a UV lamp 13 that emits UV rays 12, and a reflection with a surrounding lamp 13. Mirror lamp room 16 »The lamp room 16 also includes an opening for sending UV rays generated by the UV lamp 13 to the outside of the lamp room 16. In this way, after the semiconductor wafer 4 has been sawn open, the adhesive tape 6 on the frame 5 Self-interrupting group The vacuum chuck 7 of 2 is removed. The adhesive tape 6 thus removed has the semiconductor wafer formed by the mining process thereon, and the tape will be placed in a cassette not shown in the figure. The hardened component 3 is fed in, and the adhesive tape 6 attached to the frame 5 is placed in the opening of the lamp room 16. In this way, the tape 6 suspended in the hole of the lamp room 16 is attached with a saw as described above. -Semiconductor wafers formed by the process, in which the semiconducting wafers on the band 6 are separated from each other by the dicing groove 9. As mentioned earlier, the adhesive layer 6 ″ of the adhesive tape 6 is exposed according to the dicing groove 9 ”except for the aforementioned The UV lamp 13 'particularly mentions that the lamp room 16 of the hardened component 3 also includes an infrared lamp 15 that emits infrared rays adjacent to the UV lamp 13. Therefore, by exciting the infrared lamp 15 and the UV lamp 13 at the same time, it is possible to borrow The thermal energy generated by the infrared rays 14 emitted by the infrared lamp 15 is used to remove air leaks or moisture from the slicing slot. By activating the UV lamp 13 at the same time, the aforementioned adhesive tape 6 is dried and the adhesive layer 6 ″ is hardened on the tape 6. Can be synchronized. By infrared light 15 I .------- f equipment -------- order ------ f, i (Please read the note on the back first Please fill in this page again.) A7 B7 Printing by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. 5. Description of the invention (8) The heat generated by the belt 6 is particularly effective for removing the moisture or moisture from the slicing tank 9. In addition, the first The structure shown in the figure includes an air nozzle u on the lamp chamber 16 in addition to the infrared lamp 15. The air nozzle 丨 faces the tape 6, and the tape 6 with the semiconductor wafer attached thereon is mounted in the aforementioned hole of the lamp chamber 16. Air nozzle 11 is used to apply dry gas 10 to the belt 6 to remove moisture or moisture from the slicing trough 9. 'Dry gas vessels are preferably dry and inert gas such as nitrogen. For example,' through the nozzle n to Apply dry nitrogen gas at a flow rate of 10 liters per minute and excite UV lamp 13 with radiant energy of 45 milliwatts per square centimeter, and excite infrared lamp 15 at the same time, heating belt 6 to 90 ~ 140 ° C to make adhesion. The hardening of the layer 6 ”is completed in 1 to 5 seconds. In this way, no sub-drying procedure is required. In order to promote the drying of the belt 6, we want to heat the belt 6 to more than 90» c, but in view of the polyolefin substrate 6 With a thermal resistance of $, the temperature must be below 140 ° C. In this example, the slicing device of the first figure is used to cut a semiconductor wafer with a diameter of 6 mm into semiconductor wafers each having a diameter of 5 mm × 5 mm. It is only about 5 minutes to saw the wafer by sawing the module 2. It takes a few seconds for the circle to travel from the saw-off component 2 to the hardened component 3, and the hardened component 3 only takes a few seconds to harden. Such a dicing process is completed in a very short time, and the yield of the semiconductor device will be substantially improved. Because the wafer recording process is performed under the protection of the wafer and the adhesive tape, damage to the semiconductor wafer due to the sawing process can be effectively ruled out. [Second Embodiment] The second embodiment shows the structure of the slicing device 21 as in the second embodiment of the present invention. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 丨. "Binding ^ (Please read first (Notes on the back then fill out this page)
經濟部中央橾準局員工消費合作社印裝 參照第2圊，切片設備21尚包括位於鋸開組件2與硬化 組件3間的清洗組件22。清洗組件22包含一用以支撐架於 撐架5及其上附有半導體晶片之黏著帶6的支撐台23，支撐 作用是藉銜接帶6背面、喷灑清洗液24於帶6及支撐台23上 半導體晶圓4的喷灑喷嘴（圚上未顯示）與喷灑如乾燥空氣 等乾燥氣體25於前述半導艘晶圓4的空氣噴嘴（圖上未顯示) 來完成。 如此，在清洗組件22中，由清洗液24來清洗半導體晶 圓4，而殘留在晶圓4上的塵埃粒也被洗去。此外，藉敷施 乾燥氣體25可除去殘留的清洗液24，雖然藉乾燥氣體25的 乾燥程序並不足以完全自切片槽除去清洗液24而且無法省 去硬化組件23的乾燥程序。 由第2圖所示，台23上的晶圓4是隨鑛斷組件2之鑛開 過程形成的切片槽9而產生。將晶圓4自鋸斷組件2送至清 洗組件22，再進一步由清洗組件22送至硬化組件3皆由未 顯示出的機械人來完成》 第3圖顯示附於半導體晶片的黏著剩量及自喷嘴^所 嗔出的氮氣流率之關係，本例中燈13的輻射設定為每平方 公分450毫焦耳。此外，第4囷顯示晶圓4包含切片槽9完全 乾燥所須時間與自喷嘴11所喷出的氮氣流率之關係，本例 中燈13的輻射設定為每平方公分450毫焦耳。 參照第3圖可得知，當氮氣的流率設定在每分鐘1〇公 (請先閲讀背面之注意事項再填寫本頁) • I . — · 裝- 訂 經濟部中央梯準局員工消費合作社印製 A7 B7 五、發明説明（10 ) 升以上時，送至切片未硬化黏著劑的量幾乎減為零。再者 ’第4圖指示當氮氣的流率設定在每分鐘10公升以上時， 晶圓4完全乾燥所須時間將少於1分鐘。當氮氣的流率設定 為每分鐘大約5公升時，晶圓4完全乾燥大約需時15分鐘。 〔第三實施例〕 在第1圖的切片設備1或第2圖的切片設備21中，特別 一提的是，當晶圓4自鋸斷組件2送至清洗組件22或自清洗 組件22至硬化組件3時’由於重力的作用，黏著帶6會如第 5A圖所示向下脊曲。即使帶6穩穩地張緊在架框5時亦不 可避免此等向下的彎曲現象《當帶6發生此等向下臀曲時 ，很可能會有如第5B圖所示半導體晶片4A及4B之半導截 晶片相碰的危險，當相鄰的晶片發生此種機械性碰撞，半 導體晶片很可能有受損的危險。 傳統半導體裝置製造過程，由於切片槽間隔與晶圓4 厚度比較起來相當寬（大約150微米），因此不會有這個問 題。但近來，有將切片槽9厚度減小，大約90微米，的趨 勢’以增加單一半導體晶圓上所能容納的晶片數。如此， 則第5B圖中所示半導體晶片損害的問題就很實際了。特 別一提的是近來在直徑達8叶或12吋的大直徑晶圓中，此 種問題是特別顯著，其帶6向下弩曲的程度達1.5〜2公厘 〇 為了避免這個問題，有一種說法為，當運送半導體晶 圓4時，以一種真空吸引機構固定框架5，使帶6向上凸起 。雖然此種帶6的真空吸引可成功地除去半導體晶片4A及 _- 「裝 i I ^ ^ (請先閱讀背面之注意事項再填寫本頁} 經濟部中央標準局負工消費合作社印製 A7 ' --- - B7 _ 五、發明説明（11 ) 4B的牴觸，但可能會使半導體晶片表面的小裝置模式或 配線模式受損。此外，對帶的吸引作用會使塵埃粒於帶6 後方漂浮，而此種漂浮塵埃粒可能會對半導體晶片造成損 害》 鑑於前述的前置作業問題，本實施例採用由如壓克力 樹脂等透紫外線材質製的真空卡盤31，將其置於uv燈13 所在的UV燈室16的窗孔，並使半導體晶圓4依第6圖中的 方式由黏著帶6保護。在第6圈中’特別一提的是與前述相 對應的零件皆以相同的數字表示而不再加以敘述。 如第6圊所示，帶6張緊於框架5上，真空卡盤31吸引 帶6 ’使其固定於半導體晶圓4上◊構成真空卡盤的壓克力 橡膠盤總厚度可達15〜20毫微米，並伴隨產生數個小的貫 穿孔31Α»此外，燈室16附有排出埠16A及16B。 在如此的結構中’半導體晶圓4是由旋轉切片鋸8切割 ’而半導體晶圓4是由真空卡盤31固定於燈室16的開孔， 藉此’自空氣喷嘴32敷施冷卻氣體或氮氣於切片刃8上， 用以冷卻切片刃8及移除鋸開過程產生的塵埃粒。塵埃粒 是由真空卡盤31上的塵埃收集器33收集》 如此’第6圖表示了在燈室16進行的晶圓4鋸開過程， 其中要注意的是第6圖的鋸開過程中，UV燈13並沒有激發 〇 在第6圖的鋸開過程完成後，切割器刃8、空氣喷嘴32 及塵埃收集器33由圖上未顯示的移動機構移至機器手臂可 拾起每一個半導體晶片的位置》接著，在第7圖的步驟中 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 14 J--------f -裝------訂------ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 —_____B7___^ 五、發明説明（l2 ) ，UV燈13在黏著帶6上的黏著層6”硬化完成前都保持激化 狀態》 在前述的過程中，特別一提的是省去了將半導體晶片 自錯斷組件2移至硬化組件3的動作，而參考第圖之帶6 上的晶片干擾的問題也將成功地解決。藉此半導體裝置的 產量將實質獲得改善。 特別一提的真空卡盤31的材質並不受限於壓克力樹樹 盤，其他如氧化鋁等可透UV射線的材料皆可。 第8圖為氧化鋁的光吸收。 參考第8圓，我們注意到在波長4〇〇毫微米以上的可見 光波長帶，氧化鋁的光吸收量小，而在光波長低於28〇毫 微米以下時’光吸收量快速增加。在另一方面，在波長4〇〇 到280毫微米間的光吸收量亦相當小，如此，使氧化鋁可 用來製造真空卡盤，由於氡化鋁板為多孔性的，由氧化鋁 製作的真空卡盤31可成功地吸引其上的黏著帶6而不會形 成貫穿孔31A » 在如第6及7囷設備進行的直徑8英对之發晶圚切片試 驗中，我們證實了沒有如第5B圖的半導體晶片干擾現象 ，甚至當切片槽的寬度小到約30微米或幾達約15微米時也 沒問題。另一方面，我們證實了在傳統的切片程序進行時 ，約有3%的半導體晶片會產生干擾。 綜合上述，本實施例的程序與設備對改善半導體裝置 產量相當有效。再者，由於省去了將半導體晶片自鋸開組 件移至硬化組件，半導體裝置的產量亦獲得改善β 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公楚） 15 —. I「裝 訂-----^^ (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作杜印裝 A7 __B7___ 五、發明説明（l3 ) 此外，本發明的應用並不限於已敘的實施例，但在不 偏離本發明的範圍内要做一些改變與修正。 I.-------『 裝-- (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Refer to Section 2; the slicing equipment 21 also includes a cleaning unit 22 located between the sawing unit 2 and the hardening unit 3. The cleaning assembly 22 includes a supporting stand 23 for supporting the supporting stand 5 and the adhesive tape 6 on which the semiconductor wafer is attached. The supporting function is to connect the back of the tape 6 and spray the cleaning liquid 24 on the belt 6 and the supporting stand 23 The spray nozzles (not shown on the top) of the upper semiconductor wafer 4 and the air nozzles (not shown on the figure) spraying the dry gas 25 such as dry air on the semi-conductor wafer 4 are completed. In this way, in the cleaning module 22, the semiconductor wafer 4 is cleaned by the cleaning liquid 24, and the dust particles remaining on the wafer 4 are also washed away. In addition, the residual cleaning solution 24 can be removed by applying the drying gas 25, although the drying procedure by the drying gas 25 is not sufficient to completely remove the cleaning solution 24 from the slicing tank and the drying procedure of the hardening module 23 cannot be omitted. As shown in Fig. 2, the wafer 4 on the table 23 is produced by the slicing groove 9 formed by the mining process of the mining module 2. The wafer 4 is sent from the sawing module 2 to the cleaning module 22, and further from the cleaning module 22 to the hardening module 3 by a robot not shown. Figure 3 shows the remaining amount of adhesion and For the relationship between the nitrogen flow rate emanating from the nozzle ^, the radiation of the lamp 13 in this example is set to 450 millijoules per square centimeter. In addition, the fourth display shows the relationship between the time required for the wafer 4 to fully dry the slicing tank 9 and the flow rate of nitrogen gas emitted from the nozzle 11. In this example, the radiation of the lamp 13 is set to 450 millijoules per square centimeter. Refer to Figure 3, when the flow rate of nitrogen is set to 10 kilometers per minute (please read the precautions on the back before filling this page) • I. Printing A7 B7 V. Description of the invention (10) When the volume is above 10 liters, the amount of unhardened adhesive sent to the chip is almost reduced to zero. Furthermore, the fourth graph indicates that when the flow rate of the nitrogen is set to more than 10 liters per minute, the time required for the wafer 4 to dry completely will be less than 1 minute. When the flow rate of nitrogen is set to about 5 liters per minute, it takes about 15 minutes for the wafer 4 to completely dry. [Third Embodiment] In the slicing device 1 of FIG. 1 or the slicing device 21 of FIG. 2, it is particularly mentioned that when the wafer 4 is sent from the sawing module 2 to the cleaning module 22 or the self-cleaning module 22 to When the component 3 is hardened, due to the effect of gravity, the adhesive tape 6 will ridge downward as shown in FIG. 5A. Such downward bending phenomenon is unavoidable even when the belt 6 is firmly tensioned on the frame 5. "When such downward hip flexion occurs in the belt 6, there is likely to be semiconductor wafers 4A and 4B as shown in Fig. 5B. There is a danger that the semi-conductor wafers will collide. When such a mechanical collision occurs between adjacent wafers, the semiconductor wafer is likely to be damaged. In the conventional semiconductor device manufacturing process, this problem does not occur because the slicing groove interval is quite wide (about 150 microns) compared to the thickness of the wafer 4. Recently, however, there is a tendency to reduce the thickness of the dicing grooves 9 to about 90 m 'to increase the number of wafers that can be accommodated on a single semiconductor wafer. In this way, the problem of damage to the semiconductor wafer shown in FIG. 5B is very practical. It is particularly mentioned that in large-diameter wafers with a diameter of 8 leaves or 12 inches recently, this kind of problem is particularly significant, and its degree of cross-bow curvature is 1.5 ~ 2 mm. To avoid this problem, there are One is that when the semiconductor wafer 4 is transported, the frame 5 is fixed by a vacuum suction mechanism so that the tape 6 is raised upward. Although this type of vacuum suction with band 6 can successfully remove the semiconductor wafer 4A and _- "install i I ^ ^ (Please read the precautions on the back before filling out this page) Printed by A7 of the Central Standards Bureau, Ministry of Economic Affairs and Consumer Cooperatives' ----B7 _ 5. Description of the invention (11) The contact of 4B may damage the small device mode or the wiring mode on the surface of the semiconductor wafer. In addition, the attraction of the belt will cause the dust particles to be behind the belt 6. Floating, and such floating dust particles may cause damage to the semiconductor wafer "In view of the foregoing pre-operation problems, this embodiment uses a vacuum chuck 31 made of a UV-transmitting material such as acrylic resin, which is placed in UV The window hole of the UV lamp chamber 16 where the lamp 13 is located, and the semiconductor wafer 4 is protected by the adhesive tape 6 in the manner shown in FIG. 6. In the sixth circle, it is particularly mentioned that the parts corresponding to the foregoing are all The same numerals are indicated and will not be described again. As shown in FIG. 6 (a), the belt 6 is tensioned on the frame 5, and the vacuum chuck 31 attracts the belt 6 'to be fixed on the semiconductor wafer 4 to form the pressure of the vacuum chuck. The total thickness of acrylic rubber disc can reach 15 ~ 20nm, Several small through-holes 31A are produced together. In addition, the lamp chamber 16 is provided with discharge ports 16A and 16B. In this structure, 'the semiconductor wafer 4 is cut by a rotary dicing saw 8' and the semiconductor wafer 4 is formed by a vacuum card. The disc 31 is fixed to the opening of the lamp chamber 16, whereby cooling gas or nitrogen is applied from the air nozzle 32 to the slicing blade 8 to cool the slicing blade 8 and remove dust particles generated during sawing. The dust particles are It is collected by the dust collector 33 on the vacuum chuck 31. Thus, FIG. 6 shows the sawing process of the wafer 4 in the lamp chamber 16, and it should be noted that during the sawing process of FIG. 6, the UV lamp 13 No excitement. After the sawing process in Figure 6, the cutter blade 8, air nozzle 32, and dust collector 33 are moved from a moving mechanism not shown in the figure to a position where the robot arm can pick up each semiconductor wafer. " Next, in the step of Figure 7, this paper size applies the Chinese National Standard (CNS) A4 (210X297 mm) 14 J -------- f -Packing ------ Order --- --- (Please read the precautions on the back before filling out this page) A7 —_____ B7 ___ ^ V. Description of the Invention (l2), the UV lamp 13 remains in an agitated state until the adhesive layer 6 "of the adhesive tape 6 is hardened" In the foregoing process, it is particularly mentioned that the semiconductor wafer is omitted The movement of the self-interrupting component 2 to the hardening component 3, and the problem of wafer interference on the belt 6 with reference to the figure will be successfully solved. By this, the yield of the semiconductor device will be substantially improved. The vacuum chuck mentioned in particular The material of 31 is not limited to the acrylic tree tray, other materials such as alumina can transmit UV rays. Figure 8 shows the light absorption of alumina. Referring to the 8th circle, we notice that the wavelength is 4 In the visible light wavelength band above 0.00 nm, the light absorption of alumina is small, and when the light wavelength is below 28 nm, the light absorption increases rapidly. On the other hand, the light absorption between 400 and 280 nanometers is also quite small, so that alumina can be used to make vacuum chucks. Since the aluminized aluminum plate is porous, the vacuum made of alumina is The chuck 31 can successfully attract the adhesive tape 6 thereon without forming a through-hole 31A »In the test of the 8-inch-diameter hair crystal chip section test performed by the devices 6 and 7 囷, we have confirmed that there is no The semiconductor wafer interference phenomenon shown in the figure is no problem even when the width of the dicing groove is as small as about 30 microns or as much as about 15 microns. On the other hand, we have confirmed that about 3% of semiconductor wafers can cause interference during traditional slicing procedures. In summary, the procedures and equipment of this embodiment are quite effective for improving the yield of semiconductor devices. In addition, since the removal of the semiconductor wafer from the sawed component to the hardened component is eliminated, the output of the semiconductor device is also improved. Β This paper size applies the Chinese National Standard (CNS) A4 specification (210X297). 15 —. I "Binding ----- ^^ (Please read the precautions on the back before filling out this page) Staff Consumer Cooperation Department of the Central Bureau of Standards of the Ministry of Economic Affairs Du printed A7 __B7___ 5. Description of the Invention (l3) In addition, the application of the present invention is not limited to The embodiments have been described, but some changes and corrections must be made without departing from the scope of the present invention. I .------- 『Equipment-(Please read the precautions on the back before filling this page)
、1T 16 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）、 1T 16 This paper size is applicable to China National Standard (CNS) Α4 specification (210 × 297 mm)