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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW086114039ApriorityCriticalpatent/TW377486B/en
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Publication of TW377486BpublicationCriticalpatent/TW377486B/en
Manufacturing of shallow trench isolation structure is mainly by creating a flowing dielectric interlayer over the insulating layer to enhance the planarization effect of the polishing surface and to reduce the chance of generating dishing on oxide surface due to over-etching. The process under this invention includes wherein: (1) creating a substrate; (2) forming a mask layer over the substrate to define the mask layer; (3) forming an opening on the substrate; (4) forming an insulating layer between the opening and the surface of mask layer; (5) forming a flowing dielectric interlayer over the insulating layer; (6) etching away the flowing dielectric interlayer and a portion of the insulating layer to expose mask layer surface; and (7) removing the mask layer. A shallow trench isolation structure is thus completed.
TW086114039A1997-09-261997-09-26Method of manufacturing shallow trench isolation structure
TW377486B
(en)