TW288162B - The chemical mechanical polishing planarization technology of IC - Google Patents

The chemical mechanical polishing planarization technology of IC

Info

Publication number
TW288162B
TW288162B TW84113801A TW84113801A TW288162B TW 288162 B TW288162 B TW 288162B TW 84113801 A TW84113801 A TW 84113801A TW 84113801 A TW84113801 A TW 84113801A TW 288162 B TW288162 B TW 288162B
Authority
TW
Taiwan
Prior art keywords
insulator
teos oxide
mechanical polishing
chemical mechanical
line region
Prior art date
Application number
TW84113801A
Other languages
Chinese (zh)
Inventor
Shiun-Ming Jang
Jenn-Hwa Yu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW84113801A priority Critical patent/TW288162B/en
Application granted granted Critical
Publication of TW288162B publication Critical patent/TW288162B/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The planarization method of IC includes: - Form 1st insulator on semiconductor substrate; - Form holes on 1st insulator and lie in between conductors; - Form metal layer which strikes over the holes, and etch the metal by photolithography and etching then form metal interconnection, which divides into dense and sparse metal line region; - Form 2nd insulator; - Form the photoresist pattern by photolithography and cover the sparse metal line region; - Proceed surface treatment on 2nd insulator of dense metal line region by idling gas plasma; - Form a O3-TEOS oxide; - Form a TEOS oxide; - Proceed chemical mechanical polishing treatment on TEOS oxide & O3-TEOS oxide by CMP, and planarize TEOS & O3-TEOS oxide.
TW84113801A 1995-12-23 1995-12-23 The chemical mechanical polishing planarization technology of IC TW288162B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84113801A TW288162B (en) 1995-12-23 1995-12-23 The chemical mechanical polishing planarization technology of IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84113801A TW288162B (en) 1995-12-23 1995-12-23 The chemical mechanical polishing planarization technology of IC

Publications (1)

Publication Number Publication Date
TW288162B true TW288162B (en) 1996-10-11

Family

ID=51398100

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84113801A TW288162B (en) 1995-12-23 1995-12-23 The chemical mechanical polishing planarization technology of IC

Country Status (1)

Country Link
TW (1) TW288162B (en)

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Legal Events

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