TW376533B - Processing apparatus - Google Patents

Processing apparatus

Info

Publication number
TW376533B
TW376533B TW087105495A TW87105495A TW376533B TW 376533 B TW376533 B TW 376533B TW 087105495 A TW087105495 A TW 087105495A TW 87105495 A TW87105495 A TW 87105495A TW 376533 B TW376533 B TW 376533B
Authority
TW
Taiwan
Prior art keywords
insulating member
discharging port
gas discharging
hole
fitted
Prior art date
Application number
TW087105495A
Other languages
English (en)
Inventor
Nobuyuki Okayama
Hidehito Saegusa
Jun Ozawa
Daisuke Hayashi
Naoki Takayama
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW376533B publication Critical patent/TW376533B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor
    • Y10T29/53204—Electrode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW087105495A 1997-04-11 1998-04-10 Processing apparatus TW376533B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11047297 1997-04-11

Publications (1)

Publication Number Publication Date
TW376533B true TW376533B (en) 1999-12-11

Family

ID=14536583

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105495A TW376533B (en) 1997-04-11 1998-04-10 Processing apparatus

Country Status (6)

Country Link
US (4) USRE39939E1 (zh)
EP (1) EP1008674B1 (zh)
JP (1) JP4146905B2 (zh)
KR (1) KR100469047B1 (zh)
TW (1) TW376533B (zh)
WO (1) WO1998046808A1 (zh)

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US6300255B1 (en) * 1999-02-24 2001-10-09 Applied Materials, Inc. Method and apparatus for processing semiconductive wafers
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
TW580735B (en) * 2000-02-21 2004-03-21 Hitachi Ltd Plasma treatment apparatus and treating method of sample material
JP4203206B2 (ja) * 2000-03-24 2008-12-24 株式会社日立国際電気 基板処理装置
AU2001247685A1 (en) 2000-03-30 2001-10-15 Tokyo Electron Limited Method of and apparatus for tunable gas injection in a plasma processing system
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20030185729A1 (en) * 2002-03-29 2003-10-02 Ho Ko Electrode assembly for processing a semiconductor substrate and processing apparatus having the same
JP4133209B2 (ja) * 2002-10-22 2008-08-13 株式会社神戸製鋼所 高圧処理装置
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
KR100526928B1 (ko) * 2003-07-16 2005-11-09 삼성전자주식회사 식각장치
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
GB0326500D0 (en) 2003-11-13 2003-12-17 Oxford Instr Plasma Technology Gas port assembly
JP4451684B2 (ja) * 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 真空処理装置
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US20060054279A1 (en) * 2004-09-10 2006-03-16 Yunsang Kim Apparatus for the optimization of atmospheric plasma in a processing system
JP4572100B2 (ja) * 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
KR101153161B1 (ko) * 2005-04-01 2012-06-18 주성엔지니어링(주) 가스분사장치 및 이를 포함하는 액정표시소자의 제조장치
US7718030B2 (en) * 2005-09-23 2010-05-18 Tokyo Electron Limited Method and system for controlling radical distribution
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
KR101087445B1 (ko) * 2007-03-27 2011-11-25 세키스이가가쿠 고교가부시키가이샤 플라즈마 처리 장치
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
KR100884333B1 (ko) * 2007-04-03 2009-02-18 세메스 주식회사 기판 지지 부재, 그리고 이를 포함하는 기판 처리 장치
US20090155488A1 (en) * 2007-12-18 2009-06-18 Asm Japan K.K. Shower plate electrode for plasma cvd reactor
DE102008028542B4 (de) * 2008-06-16 2012-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP2012124186A (ja) * 2009-03-31 2012-06-28 Sanyo Electric Co Ltd プラズマ処理装置及びそれよって製造される太陽電池の製造方法
KR101098977B1 (ko) * 2010-02-18 2011-12-28 피에스케이 주식회사 플라즈마 발생 유닛 및 이를 구비한 기판 처리 장치
KR101612741B1 (ko) * 2010-03-08 2016-04-18 주성엔지니어링(주) 가스분배수단 및 이를 포함한 기판처리장치
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US20110278260A1 (en) * 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
JP5198611B2 (ja) * 2010-08-12 2013-05-15 株式会社東芝 ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
JP6339866B2 (ja) * 2014-06-05 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置およびクリーニング方法
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US10920319B2 (en) * 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN111613508A (zh) * 2019-02-25 2020-09-01 北京北方华创微电子装备有限公司 进气装置及反应腔室

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JPS6167922A (ja) 1984-09-12 1986-04-08 Fujitsu Ltd プラズマ処理装置
JPH0245629A (ja) 1988-08-08 1990-02-15 Nippon Denso Co Ltd カーエアコン制御装置
JPH0261078A (ja) 1988-08-24 1990-03-01 Nec Kyushu Ltd 平行平板型プラズマエッチング装置
JPH0245629U (zh) * 1988-09-22 1990-03-29
JP2895768B2 (ja) * 1995-03-28 1999-05-24 三洋電機株式会社 成膜装置
JP3113796B2 (ja) 1995-07-10 2000-12-04 東京エレクトロン株式会社 プラズマ処理装置
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits

Also Published As

Publication number Publication date
WO1998046808A1 (fr) 1998-10-22
USRE39969E1 (en) 2008-01-01
USRE39939E1 (en) 2007-12-18
JP4146905B2 (ja) 2008-09-10
EP1008674B1 (en) 2013-05-29
KR100469047B1 (ko) 2005-01-31
KR20010006005A (ko) 2001-01-15
USRE40046E1 (en) 2008-02-12
EP1008674A1 (en) 2000-06-14
US6334983B1 (en) 2002-01-01
EP1008674A4 (en) 2004-06-16

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MM4A Annulment or lapse of patent due to non-payment of fees