TW369695B - Memory arrangement with self-aligning non-integrated capacitor arrangement - Google Patents

Memory arrangement with self-aligning non-integrated capacitor arrangement

Info

Publication number
TW369695B
TW369695B TW086111598A TW86111598A TW369695B TW 369695 B TW369695 B TW 369695B TW 086111598 A TW086111598 A TW 086111598A TW 86111598 A TW86111598 A TW 86111598A TW 369695 B TW369695 B TW 369695B
Authority
TW
Taiwan
Prior art keywords
arrangement
self
memory
integrated capacitor
aligning
Prior art date
Application number
TW086111598A
Other languages
English (en)
Chinese (zh)
Inventor
Walter Hartner
Gunter Schindler
Carlos Mazure-Espejo
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW369695B publication Critical patent/TW369695B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs

Landscapes

  • Semiconductor Memories (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW086111598A 1996-09-30 1997-08-13 Memory arrangement with self-aligning non-integrated capacitor arrangement TW369695B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19640213A DE19640213C1 (de) 1996-09-30 1996-09-30 Speicheranordnung mit selbstjustierender nicht integrierter Kondensatoranordnung

Publications (1)

Publication Number Publication Date
TW369695B true TW369695B (en) 1999-09-11

Family

ID=7807379

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111598A TW369695B (en) 1996-09-30 1997-08-13 Memory arrangement with self-aligning non-integrated capacitor arrangement

Country Status (9)

Country Link
US (1) US6097050A (enExample)
EP (1) EP0931337A1 (enExample)
JP (1) JP3280988B2 (enExample)
KR (1) KR100414237B1 (enExample)
CN (1) CN1158700C (enExample)
DE (1) DE19640213C1 (enExample)
IN (1) IN192035B (enExample)
TW (1) TW369695B (enExample)
WO (1) WO1998014996A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100551607B1 (ko) * 1998-01-19 2006-02-13 시티즌 도케이 가부시키가이샤 반도체 패키지
CN100365815C (zh) * 2003-05-09 2008-01-30 松下电器产业株式会社 非易失性存储器及其制造方法
KR100778227B1 (ko) 2006-08-23 2007-11-20 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100852603B1 (ko) * 2006-12-27 2008-08-14 동부일렉트로닉스 주식회사 반도체소자 및 그 제조방법
JP5585167B2 (ja) * 2010-03-30 2014-09-10 富士通株式会社 電子デバイス及び電子デバイスの製造方法
CN116076163A (zh) * 2020-09-29 2023-05-05 华为技术有限公司 三维存储器及其制备方法、电子设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912545A (en) 1987-09-16 1990-03-27 Irvine Sensors Corporation Bonding of aligned conductive bumps on adjacent surfaces
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
DE3824008A1 (de) * 1988-07-15 1990-01-25 Contraves Ag Elektronische schaltung sowie verfahren zu deren herstellung
US5406701A (en) * 1992-10-02 1995-04-18 Irvine Sensors Corporation Fabrication of dense parallel solder bump connections
US5335138A (en) * 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
KR960009074A (ko) * 1994-08-29 1996-03-22 모리시다 요이치 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
CN1158700C (zh) 2004-07-21
JP2001501370A (ja) 2001-01-30
CN1231761A (zh) 1999-10-13
DE19640213C1 (de) 1998-03-05
IN192035B (enExample) 2004-02-14
KR20000048721A (ko) 2000-07-25
US6097050A (en) 2000-08-01
JP3280988B2 (ja) 2002-05-13
EP0931337A1 (de) 1999-07-28
WO1998014996A1 (de) 1998-04-09
KR100414237B1 (ko) 2004-01-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees