IN192035B - - Google Patents
Info
- Publication number
- IN192035B IN192035B IN1496CA1997A IN192035B IN 192035 B IN192035 B IN 192035B IN 1496CA1997 A IN1496CA1997 A IN 1496CA1997A IN 192035 B IN192035 B IN 192035B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19640213A DE19640213C1 (de) | 1996-09-30 | 1996-09-30 | Speicheranordnung mit selbstjustierender nicht integrierter Kondensatoranordnung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN192035B true IN192035B (enExample) | 2004-02-14 |
Family
ID=7807379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1496CA1997 IN192035B (enExample) | 1996-09-30 | 1997-08-12 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6097050A (enExample) |
| EP (1) | EP0931337A1 (enExample) |
| JP (1) | JP3280988B2 (enExample) |
| KR (1) | KR100414237B1 (enExample) |
| CN (1) | CN1158700C (enExample) |
| DE (1) | DE19640213C1 (enExample) |
| IN (1) | IN192035B (enExample) |
| TW (1) | TW369695B (enExample) |
| WO (1) | WO1998014996A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999036957A1 (en) * | 1998-01-19 | 1999-07-22 | Citizen Watch Co., Ltd. | Semiconductor package |
| JP3743891B2 (ja) | 2003-05-09 | 2006-02-08 | 松下電器産業株式会社 | 不揮発性メモリおよびその製造方法 |
| KR100778227B1 (ko) | 2006-08-23 | 2007-11-20 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
| KR100852603B1 (ko) * | 2006-12-27 | 2008-08-14 | 동부일렉트로닉스 주식회사 | 반도체소자 및 그 제조방법 |
| JP5585167B2 (ja) * | 2010-03-30 | 2014-09-10 | 富士通株式会社 | 電子デバイス及び電子デバイスの製造方法 |
| WO2022067587A1 (zh) * | 2020-09-29 | 2022-04-07 | 华为技术有限公司 | 三维存储器及其制备方法、电子设备 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912545A (en) * | 1987-09-16 | 1990-03-27 | Irvine Sensors Corporation | Bonding of aligned conductive bumps on adjacent surfaces |
| JP2788265B2 (ja) * | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ及びその駆動方法，製造方法 |
| DE3824008A1 (de) * | 1988-07-15 | 1990-01-25 | Contraves Ag | Elektronische schaltung sowie verfahren zu deren herstellung |
| US5406701A (en) * | 1992-10-02 | 1995-04-18 | Irvine Sensors Corporation | Fabrication of dense parallel solder bump connections |
| US5335138A (en) * | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
| KR960009074A (ko) * | 1994-08-29 | 1996-03-22 | 모리시다 요이치 | 반도체 장치 및 그 제조방법 |
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1996
- 1996-09-30 DE DE19640213A patent/DE19640213C1/de not_active Expired - Fee Related
-
1997
- 1997-08-07 CN CNB971983755A patent/CN1158700C/zh not_active Expired - Fee Related
- 1997-08-07 WO PCT/DE1997/001664 patent/WO1998014996A1/de not_active Ceased
- 1997-08-07 KR KR10-1999-7002690A patent/KR100414237B1/ko not_active Expired - Fee Related
- 1997-08-07 JP JP51609198A patent/JP3280988B2/ja not_active Expired - Fee Related
- 1997-08-07 EP EP97937429A patent/EP0931337A1/de not_active Withdrawn
- 1997-08-12 IN IN1496CA1997 patent/IN192035B/en unknown
- 1997-08-13 TW TW086111598A patent/TW369695B/zh not_active IP Right Cessation
-
1999
- 1999-03-30 US US09/282,041 patent/US6097050A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100414237B1 (ko) | 2004-01-13 |
| JP3280988B2 (ja) | 2002-05-13 |
| US6097050A (en) | 2000-08-01 |
| EP0931337A1 (de) | 1999-07-28 |
| KR20000048721A (ko) | 2000-07-25 |
| WO1998014996A1 (de) | 1998-04-09 |
| CN1158700C (zh) | 2004-07-21 |
| JP2001501370A (ja) | 2001-01-30 |
| DE19640213C1 (de) | 1998-03-05 |
| CN1231761A (zh) | 1999-10-13 |
| TW369695B (en) | 1999-09-11 |