TW367502B - A programmable circuit - Google Patents

A programmable circuit

Info

Publication number
TW367502B
TW367502B TW087105311A TW87105311A TW367502B TW 367502 B TW367502 B TW 367502B TW 087105311 A TW087105311 A TW 087105311A TW 87105311 A TW87105311 A TW 87105311A TW 367502 B TW367502 B TW 367502B
Authority
TW
Taiwan
Prior art keywords
programmable circuit
memory cells
programmable
programmable voltage
prevent
Prior art date
Application number
TW087105311A
Other languages
English (en)
Inventor
Byoung-Kwon Cha
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW367502B publication Critical patent/TW367502B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1087—Data input latches
TW087105311A 1996-06-29 1998-04-08 A programmable circuit TW367502B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025547A KR100193898B1 (ko) 1996-06-29 1996-06-29 플래쉬 메모리 장치

Publications (1)

Publication Number Publication Date
TW367502B true TW367502B (en) 1999-08-21

Family

ID=19464583

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105311A TW367502B (en) 1996-06-29 1998-04-08 A programmable circuit

Country Status (4)

Country Link
US (2) US5930179A (zh)
KR (1) KR100193898B1 (zh)
GB (1) GB2314953B (zh)
TW (1) TW367502B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322018B1 (ko) * 1999-01-23 2002-02-04 윤종용 음성대역 잡음 보상장치
US6747481B1 (en) * 2002-11-22 2004-06-08 Texas Instruments Incorporated Adaptive algorithm for electrical fuse programming
FR2894710A1 (fr) * 2005-12-14 2007-06-15 St Microelectronics Sa Procede et dispositif de verification de l'execution d'une commande d'ecriture dans une memoire
US8248848B1 (en) * 2007-10-01 2012-08-21 Marvell International Ltd. System and methods for multi-level nonvolatile memory read, program and erase
KR102651590B1 (ko) 2022-04-05 2024-03-25 한국타이어앤테크놀로지 주식회사 에어 포켓을 구비한 타이어

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713879B2 (ja) * 1985-06-21 1995-02-15 三菱電機株式会社 半導体記憶装置
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
JP3448051B2 (ja) * 1990-03-31 2003-09-16 株式会社東芝 不揮発性半導体記憶装置
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
JPH0757484A (ja) * 1993-08-11 1995-03-03 Sony Corp Ｎｏｒ型不揮発性メモリ制御回路
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3176008B2 (ja) * 1994-03-30 2001-06-11 株式会社東芝 半導体メモリ回路
US5629890A (en) * 1994-09-14 1997-05-13 Information Storage Devices, Inc. Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
JPH08190796A (ja) * 1995-01-09 1996-07-23 Mitsubishi Denki Semiconductor Software Kk データリフレッシュ機能を有するフラッシュメモリ及びフラッシュメモリのデータリフレッシュ方法
KR100208433B1 (ko) * 1995-12-27 1999-07-15 김영환 플래쉬 메모리 소자 및 그를 이용한 프로그램 방법

Also Published As

Publication number Publication date
GB9712951D0 (en) 1997-08-20
USRE40076E1 (en) 2008-02-19
KR100193898B1 (ko) 1999-06-15
US5930179A (en) 1999-07-27
GB2314953B (en) 2000-07-05
KR980005026A (ko) 1998-03-30
GB2314953A (en) 1998-01-14

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Legal Events

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MK4A Expiration of patent term of an invention patent