TW366586B - Circuit and method of compensating for threshold value of transistor used in semiconductor circuit - Google Patents

Circuit and method of compensating for threshold value of transistor used in semiconductor circuit

Info

Publication number
TW366586B
TW366586B TW086103876A TW86103876A TW366586B TW 366586 B TW366586 B TW 366586B TW 086103876 A TW086103876 A TW 086103876A TW 86103876 A TW86103876 A TW 86103876A TW 366586 B TW366586 B TW 366586B
Authority
TW
Taiwan
Prior art keywords
transistor
switching device
terminal
circuit
threshold voltage
Prior art date
Application number
TW086103876A
Other languages
English (en)
Inventor
Yoshihisa Saito
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW366586B publication Critical patent/TW366586B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Read Only Memory (AREA)
TW086103876A 1996-06-14 1997-03-26 Circuit and method of compensating for threshold value of transistor used in semiconductor circuit TW366586B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15451296A JP4043060B2 (ja) 1996-06-14 1996-06-14 トランジスタのしきい値補正回路及び半導体記憶装置並びにしきい値補正方法

Publications (1)

Publication Number Publication Date
TW366586B true TW366586B (en) 1999-08-11

Family

ID=15585881

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103876A TW366586B (en) 1996-06-14 1997-03-26 Circuit and method of compensating for threshold value of transistor used in semiconductor circuit

Country Status (4)

Country Link
US (1) US5949270A (zh)
JP (1) JP4043060B2 (zh)
KR (1) KR100275345B1 (zh)
TW (1) TW366586B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100278608B1 (ko) * 1998-01-16 2001-02-01 윤종용 문턱전압 보상회로
KR100332457B1 (ko) * 2000-08-07 2002-04-13 윤종용 데이터 속도차 보상을 위한 데이터 전송회로
US6621321B2 (en) * 2001-06-20 2003-09-16 Analog Devices, Inc. Circuit for conditioning output waveform
GB2378066B (en) 2001-07-23 2005-10-26 Seiko Epson Corp Comparator circuit and method
JP3715953B2 (ja) * 2002-07-10 2005-11-16 三菱電機株式会社 燃圧センサの特性補正装置
US7327168B2 (en) 2002-11-20 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP4624340B2 (ja) * 2002-11-20 2011-02-02 株式会社半導体エネルギー研究所 半導体表示装置
CN100338879C (zh) 2002-12-25 2007-09-19 株式会社半导体能源研究所 配备了校正电路的数字电路及具有该数字电路的电子装置
US7528643B2 (en) * 2003-02-12 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device having the same, and driving method of the same
EP1610292B1 (en) * 2004-06-25 2016-06-15 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof and electronic device
TWI351006B (en) 2007-02-02 2011-10-21 Ind Tech Res Inst Level shifter for gate driver
KR102100711B1 (ko) * 2013-11-29 2020-04-16 에스케이하이닉스 주식회사 비트라인 센스앰프 제어 회로 및 이를 구비하는 반도체 메모리 장치 및 동작방법
US9742406B2 (en) * 2014-06-12 2017-08-22 Synopsys, Inc. Circuit skew compensation trigger system
JP6114796B1 (ja) * 2015-10-05 2017-04-12 力晶科技股▲ふん▼有限公司 不揮発性記憶装置のためのセンス回路及び不揮発性記憶装置
US10217508B2 (en) 2016-05-16 2019-02-26 Synopsys, Inc. SRAM and periphery specialized device sensors
WO2018090620A1 (zh) 2016-11-18 2018-05-24 京东方科技集团股份有限公司 像素电路、显示面板、显示设备及驱动方法
US11164621B2 (en) * 2017-08-24 2021-11-02 Semiconductor Energy Laboratory Co., Ltd. Sense amplifier, semiconductor device, operation method thereof, and electronic device
US10930337B2 (en) * 2018-12-26 2021-02-23 Micron Technology, Inc. Write techniques for a memory device with a charge transfer device
CN113077761B (zh) 2020-01-06 2022-12-09 京东方科技集团股份有限公司 像素电路、像素驱动方法和显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527074A (en) * 1982-10-07 1985-07-02 Ncr Corporation High voltage pass circuit
US4593206A (en) * 1984-01-16 1986-06-03 Motorola, Inc. Fixed slew rate bus driver circuit
US4689495A (en) * 1985-06-17 1987-08-25 Advanced Micro Devices, Inc. CMOS high voltage switch
JPS62273694A (ja) * 1986-05-22 1987-11-27 Sony Corp センスアンプ
GB2209104A (en) * 1987-08-26 1989-04-26 Philips Nv An amplifier load circuit and an amplifier including the load circuit
US5118971A (en) * 1988-06-29 1992-06-02 Texas Instruments Incorporated Adjustable low noise output circuit responsive to environmental conditions
EP0620649B1 (en) * 1993-03-18 1997-09-10 NCR International, Inc. Transceiver circuit for an integrated circuit

Also Published As

Publication number Publication date
JP4043060B2 (ja) 2008-02-06
US5949270A (en) 1999-09-07
JPH103789A (ja) 1998-01-06
KR100275345B1 (ko) 2000-12-15
KR980006224A (ko) 1998-03-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees