TW360942B - Method for forming a capacitor with low voltage coefficient of capacitance in integrated circuit - Google Patents

Method for forming a capacitor with low voltage coefficient of capacitance in integrated circuit

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Publication number
TW360942B
TW360942B TW086115509A TW86115509A TW360942B TW 360942 B TW360942 B TW 360942B TW 086115509 A TW086115509 A TW 086115509A TW 86115509 A TW86115509 A TW 86115509A TW 360942 B TW360942 B TW 360942B
Authority
TW
Taiwan
Prior art keywords
capacitor
silicon film
capacitance
integrated circuit
low voltage
Prior art date
Application number
TW086115509A
Other languages
Chinese (zh)
Inventor
Ching-Huei Tsai
Hung-Jan Lin
Jiun-Shian Fu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086115509A priority Critical patent/TW360942B/en
Application granted granted Critical
Publication of TW360942B publication Critical patent/TW360942B/en

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  • Semiconductor Integrated Circuits (AREA)

Abstract

A method for forming a capacitor with low voltage coefficient of capacitance (VCC) in an integrated circuit, comprises using an F-type semiconductor ion to perform a buried ion implantation on the substrate region, where a capacitor is to be formed thereon, to be used as the lower electrode of the capacitor, removing the photoresist and performing a thermal oxidation step to produce a capacitor dielectric layer, covering with a silicon film and performing a thermal diffusion to dope an F-type semiconductor material into the silicon film, covering the silicon film with a layer of a metal silicide, and performing an ion implantation to the said silicon film and the metal silicide with the F-type semiconductor ion, thereby reducing the VCC of the capacitor, and using a photolithography and etching technique to produce the silicon film and the metal silicide into an upper electrode.
TW086115509A 1997-10-21 1997-10-21 Method for forming a capacitor with low voltage coefficient of capacitance in integrated circuit TW360942B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086115509A TW360942B (en) 1997-10-21 1997-10-21 Method for forming a capacitor with low voltage coefficient of capacitance in integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086115509A TW360942B (en) 1997-10-21 1997-10-21 Method for forming a capacitor with low voltage coefficient of capacitance in integrated circuit

Publications (1)

Publication Number Publication Date
TW360942B true TW360942B (en) 1999-06-11

Family

ID=57940724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115509A TW360942B (en) 1997-10-21 1997-10-21 Method for forming a capacitor with low voltage coefficient of capacitance in integrated circuit

Country Status (1)

Country Link
TW (1) TW360942B (en)

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