KR950025869A - How to Form Contact Holes - Google Patents
How to Form Contact Holes Download PDFInfo
- Publication number
- KR950025869A KR950025869A KR1019940002274A KR19940002274A KR950025869A KR 950025869 A KR950025869 A KR 950025869A KR 1019940002274 A KR1019940002274 A KR 1019940002274A KR 19940002274 A KR19940002274 A KR 19940002274A KR 950025869 A KR950025869 A KR 950025869A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- tantalum oxide
- film
- oxide film
- contact hole
- Prior art date
Links
Abstract
본 발명은 반도체 소자 제조공정중 금속배선과 하부막과의 연결을 위한 콘택홀 형성방법에 관한 것으로, 워드 라인용 폴리실리콘막 상에 층간 절연막(4)을 형성하고, 전체구조 상부에 탄탈륨옥사이드막(5)을 형성하는 단계; 상기 탄탈륨옥사이드막(5) 상부를 평탄화막(6)으로 평탄화하는 단계; 및 예정된 콘택홀 부위의 상기 탄탈륨옥사이드막(5), 층간 절연막(4)을 선택식각하여 제거함으로써 반도체 기판(1)을 노출시키는 단계를 포함하여 이루어지는 것을 특징을 함으로써 본 발명은 디자인룰에 관게없는 레이어를 식각 장벽으로 사용함으로써 고집적 소자에 적합한 미세 콘택을 기존의 노광기술과 식각기술로도 달성할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact hole for connecting a metal wiring to a lower layer during a semiconductor device manufacturing process. (5) forming; Planarizing an upper portion of the tantalum oxide film 5 with a planarization film 6; And exposing the semiconductor substrate 1 by selectively etching and removing the tantalum oxide film 5 and the interlayer insulating film 4 in the predetermined contact hole region. By using the layer as an etch barrier, micro-contacts suitable for highly integrated devices can be achieved with conventional exposure and etching techniques.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1D도는 본 발명에 따른 콘택홀 형성공정을 나타내는 예시 단면도.1A to 1D are exemplary cross-sectional views showing a contact hole forming process according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940002274A KR950025869A (en) | 1994-02-07 | 1994-02-07 | How to Form Contact Holes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940002274A KR950025869A (en) | 1994-02-07 | 1994-02-07 | How to Form Contact Holes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950025869A true KR950025869A (en) | 1995-09-18 |
Family
ID=66663173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940002274A KR950025869A (en) | 1994-02-07 | 1994-02-07 | How to Form Contact Holes |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950025869A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100458087B1 (en) * | 1997-06-30 | 2005-02-23 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device to etch oxide layer by gas including small quantity of polymer |
-
1994
- 1994-02-07 KR KR1019940002274A patent/KR950025869A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100458087B1 (en) * | 1997-06-30 | 2005-02-23 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device to etch oxide layer by gas including small quantity of polymer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |