TW357461B - Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistors - Google Patents
Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistorsInfo
- Publication number
- TW357461B TW357461B TW086116435A TW86116435A TW357461B TW 357461 B TW357461 B TW 357461B TW 086116435 A TW086116435 A TW 086116435A TW 86116435 A TW86116435 A TW 86116435A TW 357461 B TW357461 B TW 357461B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistors
- ferroelectric
- operating
- transistor
- storage devices
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 230000005294 ferromagnetic effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 2
- 230000010287 polarization Effects 0.000 abstract 1
- 230000002269 spontaneous effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9149273A JPH10341002A (ja) | 1997-06-06 | 1997-06-06 | 強誘電体トランジスタ、半導体記憶装置、強誘電体トランジスタの取扱い方法および強誘電体トランジスタの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW357461B true TW357461B (en) | 1999-05-01 |
Family
ID=15471620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086116435A TW357461B (en) | 1997-06-06 | 1997-11-05 | Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistors |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6107656A (zh) |
| JP (1) | JPH10341002A (zh) |
| KR (1) | KR100336079B1 (zh) |
| SG (1) | SG78278A1 (zh) |
| TW (1) | TW357461B (zh) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727148B1 (en) * | 1998-06-30 | 2004-04-27 | Lam Research Corporation | ULSI MOS with high dielectric constant gate insulator |
| US6480510B1 (en) | 1998-07-28 | 2002-11-12 | Serconet Ltd. | Local area network of serial intelligent cells |
| KR100433509B1 (ko) | 1998-08-21 | 2004-05-31 | 미크론 테크놀로지,인코포레이티드 | 전계 효과 트랜지스터, 집적 회로, 전계 효과 트랜지스터 형성 방법, 그리고 집적 회로 형성 방법 |
| KR100532398B1 (ko) * | 1998-12-24 | 2006-01-27 | 삼성전자주식회사 | 금속막으로구성된게이트전극을갖는모스트랜지스터 |
| DE19946437A1 (de) * | 1999-09-28 | 2001-04-12 | Infineon Technologies Ag | Ferroelektrischer Transistor |
| DE19947117B4 (de) * | 1999-09-30 | 2007-03-08 | Infineon Technologies Ag | Ferroelektrischer Transistor und dessen Verwendung in einer Speicherzellenanordnung |
| KR20010063730A (ko) * | 1999-12-24 | 2001-07-09 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
| US6549616B1 (en) | 2000-03-20 | 2003-04-15 | Serconet Ltd. | Telephone outlet for implementing a local area network over telephone lines and a local area network using such outlets |
| US6842459B1 (en) | 2000-04-19 | 2005-01-11 | Serconet Ltd. | Network combining wired and non-wired segments |
| JP3627640B2 (ja) * | 2000-09-22 | 2005-03-09 | 松下電器産業株式会社 | 半導体メモリ素子 |
| US6713199B2 (en) * | 2001-12-31 | 2004-03-30 | Memscap | Multilayer structure used especially as a material of high relative permittivity |
| US6673675B2 (en) * | 2002-04-11 | 2004-01-06 | Micron Technology, Inc. | Methods of fabricating an MRAM device using chemical mechanical polishing |
| US20040036129A1 (en) * | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
| IL152824A (en) | 2002-11-13 | 2012-05-31 | Mosaid Technologies Inc | A socket that can be connected to and the network that uses it |
| CN1320606C (zh) * | 2003-03-04 | 2007-06-06 | 台湾积体电路制造股份有限公司 | 一种栅极介电层与改善其电性的方法 |
| JP2005142451A (ja) * | 2003-11-07 | 2005-06-02 | Oki Electric Ind Co Ltd | 半導体メモリ装置及び半導体メモリ装置の製造方法 |
| IL160417A (en) | 2004-02-16 | 2011-04-28 | Mosaid Technologies Inc | Unit added to the outlet |
| US8399934B2 (en) * | 2004-12-20 | 2013-03-19 | Infineon Technologies Ag | Transistor device |
| KR100932477B1 (ko) | 2004-07-22 | 2009-12-17 | 니폰덴신뎅와 가부시키가이샤 | 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물 박막 및 그 제조방법 |
| US7873058B2 (en) | 2004-11-08 | 2011-01-18 | Mosaid Technologies Incorporated | Outlet with analog signal adapter, a method for use thereof and a network using said outlet |
| JP2007157982A (ja) * | 2005-12-05 | 2007-06-21 | Seiko Epson Corp | トランジスタ型強誘電体メモリおよびその製造方法 |
| US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
| JP4573784B2 (ja) * | 2006-03-08 | 2010-11-04 | Ｏｋｉセミコンダクタ株式会社 | 半導体装置の製造方法 |
| WO2011111309A1 (ja) * | 2010-03-11 | 2011-09-15 | パナソニック株式会社 | 焦電型温度センサを用いて温度を測定する方法 |
| KR20180013091A (ko) * | 2016-07-28 | 2018-02-07 | 고려대학교 세종산학협력단 | 하프니아 계열 강유전체를 포함하는 반도체 소자, 및 그 제조 방법 |
| US11289602B2 (en) | 2020-01-03 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | FeFET of 3D structure for capacitance matching |
| US20240120420A1 (en) * | 2022-10-05 | 2024-04-11 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Ferroelectric field-effect transistors with a hybrid well |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384729A (en) * | 1991-10-28 | 1995-01-24 | Rohm Co., Ltd. | Semiconductor storage device having ferroelectric film |
| US5789775A (en) * | 1996-01-26 | 1998-08-04 | Radiant Technologies | High density memory and double word ferroelectric memory cell for constructing the same |
-
1997
- 1997-06-06 JP JP9149273A patent/JPH10341002A/ja active Pending
- 1997-10-28 US US08/958,989 patent/US6107656A/en not_active Expired - Fee Related
- 1997-10-29 SG SG1997003906A patent/SG78278A1/en unknown
- 1997-11-05 TW TW086116435A patent/TW357461B/zh active
-
1998
- 1998-06-01 KR KR1019980020270A patent/KR100336079B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10341002A (ja) | 1998-12-22 |
| KR19990006561A (ko) | 1999-01-25 |
| SG78278A1 (en) | 2001-02-20 |
| KR100336079B1 (ko) | 2002-06-20 |
| US6107656A (en) | 2000-08-22 |
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