MY136344A
(en )
2008-09-30
Low temperature formation of backside ohmic contacts for vertical devices
FR2646018B1
(fr )
1998-01-02
Puce semiconductrice munie d'un dissipateur de chaleur et son procede de fabrication
EP0390509A3
(en )
1990-11-22
Semi-conductor device and method of manufacturing the same
JP2000183329A5
(zh )
2006-04-27
TW369683B
(en )
1999-09-11
A method for forming a semiconductor device having a shallow junction and a low sheet resistance
US4696093A
(en )
1987-09-29
Fabrication of Schottky barrier MOSFETS
TW269052B
(en )
1996-01-21
Process for semiconductor wafer, semiconductor integrated circuit and devices thereof
TW357400B
(en )
1999-05-01
Use of silicon nitride mask in the automated alignment of silicified substance
TW338177B
(en )
1998-08-11
Semiconductor device and a fabrication method thereof
JPS5331983A
(en )
1978-03-25
Production of semiconductor substrates
SE0002389L
(sv )
2001-12-27
Transistoranordning samt framställningsförfarande därav
TW335535B
(en )
1998-07-01
Method of manufacturing semiconductor device
TW336349B
(en )
1998-07-11
Process for producing IC well construction
JPS52124860A
(en )
1977-10-20
Electrode formation method for semiconductor devices
TW357539B
(en )
1999-05-01
Method for forming built-in layers in semiconductor substrates
TW303518B
(en )
1997-04-21
An improved DMOS fabrication process implemented with reduced number of masks
TW295721B
(en )
1997-01-11
Manufacturing process of silicide for improving FET
KR920008951A
(ko )
1992-05-28
더블도우프된 채널스톱층을 가지는 반도체장치 및 그 제조방법
JPS5512756A
(en )
1980-01-29
Semiconductor device manufacturing method
JPH04307741A
(ja )
1992-10-29
半導体装置の製造方法
TW351014B
(en )
1999-01-21
Manufacturing method of an IC alignment mark
TW359001B
(en )
1999-05-21
Method for forming semiconductor shallow slot insulation regions
TW351002B
(en )
1999-01-21
Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM
JPS57204170A
(en )
1982-12-14
Manufacture of mos type field effect transistor
KR960016232B1
(en )
1996-12-07
Metal silicide forming method