TW351002B - Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM - Google Patents

Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM

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Publication number
TW351002B
TW351002B TW086116026A TW86116026A TW351002B TW 351002 B TW351002 B TW 351002B TW 086116026 A TW086116026 A TW 086116026A TW 86116026 A TW86116026 A TW 86116026A TW 351002 B TW351002 B TW 351002B
Authority
TW
Taiwan
Prior art keywords
layer
silicone
forming
crystal
removal
Prior art date
Application number
TW086116026A
Other languages
Chinese (zh)
Inventor
Ruei-Lin Lin
Ching-Shiang Shiu
Yu-Kuen Su
Original Assignee
Ruei-Lin Lin
Shiu Chin Shiang
Yu-Kuen Su
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ruei-Lin Lin, Shiu Chin Shiang, Yu-Kuen Su filed Critical Ruei-Lin Lin
Priority to TW086116026A priority Critical patent/TW351002B/en
Application granted granted Critical
Publication of TW351002B publication Critical patent/TW351002B/en

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Abstract

A sort of manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM, including the following steps: a. provision of a silicone substrate, having a first type impurity and a port oxide layer formed on the silicone substrate; b. forming a first multi-crystal silicone layer; c. implanting a second type impurity into said first multi-crystal silicone layer; d. forming of a silicone nitride layer; e. removal of part of said silicone nitride layer, the first multi-crystal silicone layer and the port silicone oxide layer, for defining a master zone and a field oxidization zone; f. forming in said oxidized layer a path obstruction zone; g. forming a field oxidization layer; h. forming a port electrode; I. forming in sequence a protective oxide layer and silicone oxide gap; j. forming the source/drain port zone; k. forming of a self-alignment thermal oxidization layer; l. removal of said silicone oxide gap, the protective oxidized layer and the silicone oxide layer, for exposure of the upper surface of the first multi-crystal silicone layer; m. forming of a ferro material layer; n. forming of a conductive layer; o. removal of part of the conductive layer, for a plurality of character lines and removal of part of the first multi-crystal silicone layer; and p. implanting of the first type impurity under the first multi-crystal silicone layer.
TW086116026A 1997-10-29 1997-10-29 Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM TW351002B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086116026A TW351002B (en) 1997-10-29 1997-10-29 Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086116026A TW351002B (en) 1997-10-29 1997-10-29 Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM

Publications (1)

Publication Number Publication Date
TW351002B true TW351002B (en) 1999-01-21

Family

ID=57939967

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116026A TW351002B (en) 1997-10-29 1997-10-29 Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM

Country Status (1)

Country Link
TW (1) TW351002B (en)

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MM4A Annulment or lapse of patent due to non-payment of fees