TW351002B - Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM - Google Patents
Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAMInfo
- Publication number
- TW351002B TW351002B TW086116026A TW86116026A TW351002B TW 351002 B TW351002 B TW 351002B TW 086116026 A TW086116026 A TW 086116026A TW 86116026 A TW86116026 A TW 86116026A TW 351002 B TW351002 B TW 351002B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- silicone
- forming
- crystal
- removal
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
A sort of manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM, including the following steps: a. provision of a silicone substrate, having a first type impurity and a port oxide layer formed on the silicone substrate; b. forming a first multi-crystal silicone layer; c. implanting a second type impurity into said first multi-crystal silicone layer; d. forming of a silicone nitride layer; e. removal of part of said silicone nitride layer, the first multi-crystal silicone layer and the port silicone oxide layer, for defining a master zone and a field oxidization zone; f. forming in said oxidized layer a path obstruction zone; g. forming a field oxidization layer; h. forming a port electrode; I. forming in sequence a protective oxide layer and silicone oxide gap; j. forming the source/drain port zone; k. forming of a self-alignment thermal oxidization layer; l. removal of said silicone oxide gap, the protective oxidized layer and the silicone oxide layer, for exposure of the upper surface of the first multi-crystal silicone layer; m. forming of a ferro material layer; n. forming of a conductive layer; o. removal of part of the conductive layer, for a plurality of character lines and removal of part of the first multi-crystal silicone layer; and p. implanting of the first type impurity under the first multi-crystal silicone layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116026A TW351002B (en) | 1997-10-29 | 1997-10-29 | Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116026A TW351002B (en) | 1997-10-29 | 1997-10-29 | Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM |
Publications (1)
Publication Number | Publication Date |
---|---|
TW351002B true TW351002B (en) | 1999-01-21 |
Family
ID=57939967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086116026A TW351002B (en) | 1997-10-29 | 1997-10-29 | Manufacturing method of contactless non-destructive a ferro-electric Random Access Memory FRAM |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW351002B (en) |
-
1997
- 1997-10-29 TW TW086116026A patent/TW351002B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |