Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor MfgfiledCriticalTaiwan Semiconductor Mfg
Priority to TW84101953ApriorityCriticalpatent/TW281803B/en
Application grantedgrantedCritical
Publication of TW281803BpublicationCriticalpatent/TW281803B/en
A method of increasing effective load length with surface type for forming static memory cell and load resistor on semiconductor substrate comprises of: forming one first polysilicon on the semiconductor layer; patterning and etching the first polysilicon to forming step on its two sides; forming one dielectric above the first polysilicon and on the step position of two sides of the first polysilicon; forming one second polysilicon extending to cover the polysilicon inter-layer; with one dopant with low dose performing total ion implantation into the second polysilicon, including ion implantation of the resistance area, to form material with high resistance covering the step area; forming contact area for metal interconnection on surrounding of the second polysilicon.
TW84101953A1995-03-021995-03-02Fabrication method of static memory cell
TW281803B
(en)