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A read only memory self-aligned implantation coding method applicable to one semiconductor substrate comprises the following steps: forming one oxide layer on the substrate; forming multiple deposition selective material on the oxide layer; forming multiple dielectric material on the oxide layer between the deposition selective materials; removing the deposition selective materials; with mask performing coding implantation procedure to form coding impurity diffusion area in the substrate; and forming multiple characters between every two next dielectric materials.
TW84104734A1995-05-121995-05-12Read only memory self-aligned implantation coding method
TW276365B
(en)