TW357388B - Method of, and apparatus for, forming polycrystalline silicon - Google Patents
Method of, and apparatus for, forming polycrystalline siliconInfo
- Publication number
- TW357388B TW357388B TW086117197A TW86117197A TW357388B TW 357388 B TW357388 B TW 357388B TW 086117197 A TW086117197 A TW 086117197A TW 86117197 A TW86117197 A TW 86117197A TW 357388 B TW357388 B TW 357388B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- polycrystalline silicon
- forming polycrystalline
- multicrystalline
- pressure
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000000149 argon plasma sintering Methods 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8309497A JPH10149984A (ja) | 1996-11-20 | 1996-11-20 | 多結晶シリコンの形成方法及び形成装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW357388B true TW357388B (en) | 1999-05-01 |
Family
ID=17993711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086117197A TW357388B (en) | 1996-11-20 | 1997-11-18 | Method of, and apparatus for, forming polycrystalline silicon |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH10149984A (zh) |
| KR (1) | KR100291234B1 (zh) |
| TW (1) | TW357388B (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3027968B2 (ja) | 1998-01-29 | 2000-04-04 | 日新電機株式会社 | 成膜装置 |
| KR19990085878A (ko) * | 1998-05-22 | 1999-12-15 | 구자홍 | 강유전체 커패시터 소자의 일괄 제조장치 |
| WO2000060647A1 (fr) * | 1999-04-06 | 2000-10-12 | Matsushita Electric Industrial Co.,Ltd. | Dispositif a structure multicouche, appareil et procede de production de ce dispositif |
| KR100293524B1 (ko) * | 1999-05-28 | 2001-06-15 | 구본준 | 비진공 공정을 이용한 결정화장치 및 방법 |
| JP2001023918A (ja) | 1999-07-08 | 2001-01-26 | Nec Corp | 半導体薄膜形成装置 |
| JP3491571B2 (ja) | 1999-07-13 | 2004-01-26 | 日本電気株式会社 | 半導体薄膜の形成方法 |
| JP3393469B2 (ja) | 1999-07-15 | 2003-04-07 | 日本電気株式会社 | 薄膜半導体素子の製造方法及び薄膜半導体形成装置 |
| US6863733B1 (en) | 1999-07-15 | 2005-03-08 | Nec Corporation | Apparatus for fabricating thin-film semiconductor device |
| US6765342B1 (en) | 1999-10-18 | 2004-07-20 | Matsushita Electric Work, Ltd. | Field emission-type electron source and manufacturing method thereof |
| US6402401B1 (en) * | 1999-10-19 | 2002-06-11 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| JP4737366B2 (ja) * | 2004-02-25 | 2011-07-27 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| KR100776154B1 (ko) | 2006-08-29 | 2007-11-15 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
| CN102243991B (zh) * | 2011-05-06 | 2013-04-03 | 上海大学 | 用锡诱导非晶硅薄膜晶化为多晶硅薄膜的方法 |
| WO2016076168A1 (ja) * | 2014-11-11 | 2016-05-19 | シャープ株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06333823A (ja) * | 1993-05-24 | 1994-12-02 | Fuji Xerox Co Ltd | 多結晶シリコン膜の製造方法、薄膜トランジスタの製造方法及びリモートプラズマ装置 |
| JP3165324B2 (ja) * | 1994-04-13 | 2001-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
1996
- 1996-11-20 JP JP8309497A patent/JPH10149984A/ja active Pending
-
1997
- 1997-11-17 KR KR1019970060502A patent/KR100291234B1/ko not_active IP Right Cessation
- 1997-11-18 TW TW086117197A patent/TW357388B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980042503A (ko) | 1998-08-17 |
| JPH10149984A (ja) | 1998-06-02 |
| KR100291234B1 (ko) | 2001-08-07 |
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