TW354860B - Method of cleaning hydrogen plasma down-stream apparatus - Google Patents

Method of cleaning hydrogen plasma down-stream apparatus

Info

Publication number
TW354860B
TW354860B TW084105225A TW84105225A TW354860B TW 354860 B TW354860 B TW 354860B TW 084105225 A TW084105225 A TW 084105225A TW 84105225 A TW84105225 A TW 84105225A TW 354860 B TW354860 B TW 354860B
Authority
TW
Taiwan
Prior art keywords
plasma
stream
hydrogen plasma
cleaning
hydrogen
Prior art date
Application number
TW084105225A
Other languages
English (en)
Inventor
Jun Kikuchi
Shuzo Fujimura
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW354860B publication Critical patent/TW354860B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
TW084105225A 1994-07-25 1995-05-24 Method of cleaning hydrogen plasma down-stream apparatus TW354860B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17294394A JP3533583B2 (ja) 1994-07-25 1994-07-25 水素プラズマダウンフロー装置の洗浄方法

Publications (1)

Publication Number Publication Date
TW354860B true TW354860B (en) 1999-03-21

Family

ID=15951232

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105225A TW354860B (en) 1994-07-25 1995-05-24 Method of cleaning hydrogen plasma down-stream apparatus

Country Status (4)

Country Link
US (1) US5885361A (zh)
JP (1) JP3533583B2 (zh)
KR (1) KR0159179B1 (zh)
TW (1) TW354860B (zh)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW371796B (en) * 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
US6228751B1 (en) * 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JPH10321610A (ja) * 1997-03-19 1998-12-04 Fujitsu Ltd 半導体装置の製造方法
US6376249B1 (en) * 1997-07-07 2002-04-23 Sumitomo Seika Chemicals Co., Ltd. Method for stabilizing low-concentration standard reference gas and low-concentration standard reference gas obtained by the same
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US6105588A (en) * 1998-05-27 2000-08-22 Micron Technology, Inc. Method of resist stripping during semiconductor device fabrication
JPH11354516A (ja) * 1998-06-08 1999-12-24 Sony Corp シリコン酸化膜形成装置及びシリコン酸化膜形成方法
US7014788B1 (en) * 1998-06-10 2006-03-21 Jim Mitzel Surface treatment method and equipment
US7080545B2 (en) * 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
CN101457338B (zh) * 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
KR100792328B1 (ko) * 2003-12-30 2008-01-07 동부일렉트로닉스 주식회사 플라즈마 식각장비의 석영관 장치
JP2005195965A (ja) * 2004-01-08 2005-07-21 Sharp Corp ホログラム素子、その製造方法、電子光学部品
JP2005260060A (ja) * 2004-03-12 2005-09-22 Semiconductor Leading Edge Technologies Inc レジスト除去装置及びレジスト除去方法、並びにそれを用いて製造した半導体装置
JP2005268312A (ja) * 2004-03-16 2005-09-29 Semiconductor Leading Edge Technologies Inc レジスト除去方法及びそれを用いて製造した半導体装置
KR100580584B1 (ko) * 2004-05-21 2006-05-16 삼성전자주식회사 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치
US20060175014A1 (en) * 2005-02-10 2006-08-10 Michael Cox Specimen surface treatment system
US20060175291A1 (en) * 2005-02-10 2006-08-10 Hunt John A Control of process gases in specimen surface treatment system
US20060175013A1 (en) * 2005-02-10 2006-08-10 Michael Cox Specimen surface treatment system
JP4072627B2 (ja) * 2005-02-14 2008-04-09 国立大学法人九州工業大学 原子状水素定量方法およびその装置
JP4788924B2 (ja) * 2005-02-14 2011-10-05 国立大学法人九州工業大学 原子状水素吸着除去方法およびその装置
JP4652841B2 (ja) * 2005-02-21 2011-03-16 キヤノンアネルバ株式会社 真空処理装置における水素原子発生源及び水素原子輸送方法
US20060211253A1 (en) * 2005-03-16 2006-09-21 Ing-Shin Chen Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
US7524769B2 (en) * 2005-03-31 2009-04-28 Tokyo Electron Limited Method and system for removing an oxide from a substrate
US7750326B2 (en) * 2005-06-13 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
US20070048980A1 (en) * 2005-08-24 2007-03-01 International Business Machines Corporation Method for post-rie passivation of semiconductor surfaces for epitaxial growth
US7495239B2 (en) * 2005-12-22 2009-02-24 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
US7504643B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
JP2007201067A (ja) * 2006-01-25 2007-08-09 Sekisui Chem Co Ltd 表面処理方法及び装置
US7434716B2 (en) * 2006-12-21 2008-10-14 Tyco Healthcare Group Lp Staple driver for articulating surgical stapler
JP5469991B2 (ja) * 2009-10-19 2014-04-16 株式会社アルバック 分析装置
CN101837357B (zh) * 2010-05-04 2011-10-05 宁波大学 一种等离子体清洗装置
JP5618766B2 (ja) * 2010-10-27 2014-11-05 株式会社アルバック ラジカル測定装置及びラジカル測定管
KR101667311B1 (ko) 2015-02-03 2016-10-18 김현희 작업공간이 구비된 소형 연관 보일러
SG11202006380UA (en) 2017-12-01 2020-08-28 Mks Instr Multi-sensor gas sampling detection system for radical gases and short-lived molecules and method of use
JP7033912B2 (ja) * 2017-12-22 2022-03-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201579A (en) * 1978-06-05 1980-05-06 Motorola, Inc. Method for removing photoresist by hydrogen plasma
JPH01306582A (ja) * 1988-06-06 1989-12-11 Canon Inc 堆積膜形成装置の洗浄方法
KR930004115B1 (ko) * 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
US5500393A (en) * 1990-05-21 1996-03-19 Sumitomo Electric Industries, Ltd. Method for fabricating a schottky junction
DE69320963T2 (de) * 1992-06-22 1999-05-12 Lam Res Corp Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
JPH0786242A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 半導体装置の製造方法
JP3328416B2 (ja) * 1994-03-18 2002-09-24 富士通株式会社 半導体装置の製造方法と製造装置

Also Published As

Publication number Publication date
JPH0837176A (ja) 1996-02-06
KR960005764A (ko) 1996-02-23
US5885361A (en) 1999-03-23
KR0159179B1 (ko) 1999-02-01
JP3533583B2 (ja) 2004-05-31

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