TW349998B - Target material of metal silicide - Google Patents

Target material of metal silicide

Info

Publication number
TW349998B
TW349998B TW086109721A TW86109721A TW349998B TW 349998 B TW349998 B TW 349998B TW 086109721 A TW086109721 A TW 086109721A TW 86109721 A TW86109721 A TW 86109721A TW 349998 B TW349998 B TW 349998B
Authority
TW
Taiwan
Prior art keywords
metal silicide
target material
free silicon
target
metal
Prior art date
Application number
TW086109721A
Other languages
English (en)
Inventor
Eiji Hirakawa
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Application granted granted Critical
Publication of TW349998B publication Critical patent/TW349998B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW086109721A 1996-08-13 1997-07-10 Target material of metal silicide TW349998B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23130296 1996-08-13

Publications (1)

Publication Number Publication Date
TW349998B true TW349998B (en) 1999-01-11

Family

ID=16921500

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109721A TW349998B (en) 1996-08-13 1997-07-10 Target material of metal silicide

Country Status (3)

Country Link
US (1) US5919321A (zh)
KR (1) KR100264095B1 (zh)
TW (1) TW349998B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678426B (zh) * 2018-03-30 2019-12-01 日商Ｊｘ金屬股份有限公司 矽化鎢靶部件及其製造方法，以及矽化鎢膜的製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713391B2 (en) 1997-07-11 2004-03-30 Honeywell International Inc. Physical vapor deposition targets
KR20010021722A (ko) 1997-07-11 2001-03-15 존슨매테이일렉트로닉스, 인코퍼레이티드 내부 금속성인 알루미늄 화합물 및 규소 화합물 스퍼터링타겟과 그의 생성방법
KR101140115B1 (ko) * 2002-08-19 2012-04-30 호야 가부시키가이샤 마스크 블랭크의 제조방법, 전사 마스크의 제조방법, 마스크 블랭크 제조용 스퍼터링 타깃
US8784729B2 (en) 2007-01-16 2014-07-22 H.C. Starck Inc. High density refractory metals and alloys sputtering targets
WO2010119811A1 (ja) * 2009-04-16 2010-10-21 Hoya株式会社 マスクブランク及び転写用マスク並びに膜緻密性評価方法
US9053860B2 (en) * 2010-12-24 2015-06-09 Showa Denko K.K. Tungsten powder, anode body for capacitors, and electrolytic capacitor
WO2013058018A1 (ja) * 2011-10-18 2013-04-25 昭和電工株式会社 コンデンサの陽極体の製造方法
WO2015093154A1 (ja) * 2013-12-20 2015-06-25 昭和電工株式会社 タングステン粉、コンデンサの陽極体、及び電解コンデンサ
JP6768575B2 (ja) * 2017-03-24 2020-10-14 Ｊｘ金属株式会社 タングステンシリサイドターゲット及びその製造方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
GB1311659A (en) * 1969-07-30 1973-03-28 Secr Defence Electrical device substrates
US3754168A (en) * 1970-03-09 1973-08-21 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
JPS6066425A (ja) * 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> Ｌｓｉ電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法
JPS60234364A (ja) * 1984-05-07 1985-11-21 Toshiba Corp 半導体装置
JPS61141673A (ja) * 1984-12-13 1986-06-28 東京タングステン株式会社 モリブデンシリサイド合金焼結体及びその製造方法
JPS61145828A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd スパツタリングタ−ゲツトとその製造方法
JPH0791636B2 (ja) * 1987-03-09 1995-10-04 日立金属株式会社 スパツタリングタ−ゲツトおよびその製造方法
JPH02141569A (ja) * 1988-11-24 1990-05-30 Hitachi Ltd 超伝導材料
JP3379071B2 (ja) * 1991-11-20 2003-02-17 忠弘 大見 酸化クロムを主成分とする酸化不動態膜の形成方法及びステンレス鋼
US5693156A (en) * 1993-12-21 1997-12-02 United Technologies Corporation Oxidation resistant molybdenum alloy
JP3528980B2 (ja) * 1994-08-03 2004-05-24 日立金属株式会社 タングステンシリサイドターゲット材およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678426B (zh) * 2018-03-30 2019-12-01 日商Ｊｘ金屬股份有限公司 矽化鎢靶部件及其製造方法，以及矽化鎢膜的製造方法

Also Published As

Publication number Publication date
KR19980018187A (ko) 1998-06-05
KR100264095B1 (ko) 2000-08-16
US5919321A (en) 1999-07-06

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