TW348272B - Method and apparatus for depositing planar and highly oriented layers - Google Patents

Method and apparatus for depositing planar and highly oriented layers

Info

Publication number
TW348272B
TW348272B TW086114576A TW86114576A TW348272B TW 348272 B TW348272 B TW 348272B TW 086114576 A TW086114576 A TW 086114576A TW 86114576 A TW86114576 A TW 86114576A TW 348272 B TW348272 B TW 348272B
Authority
TW
Taiwan
Prior art keywords
substrate
temperatures
layer
crystal growth
oriented crystal
Prior art date
Application number
TW086114576A
Other languages
English (en)
Inventor
Tie Guo Ted
Bhagubhai Naik Mehul
Chen Liang-Yuh
Craig Mosely Roderick
Ebinglass Israel
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW348272B publication Critical patent/TW348272B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1073—Barrier, adhesion or liner layers
    • H01L2221/1084—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L2221/1089—Stacks of seed layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086114576A 1996-10-24 1997-10-06 Method and apparatus for depositing planar and highly oriented layers TW348272B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/736,629 US6017144A (en) 1996-03-05 1996-10-24 Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer

Publications (1)

Publication Number Publication Date
TW348272B true TW348272B (en) 1998-12-21

Family

ID=24960628

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086114576A TW348272B (en) 1996-10-24 1997-10-06 Method and apparatus for depositing planar and highly oriented layers

Country Status (6)

Country Link
US (1) US6017144A (zh)
EP (1) EP0838536A3 (zh)
JP (1) JPH10130846A (zh)
KR (1) KR19980033077A (zh)
SG (1) SG53098A1 (zh)
TW (1) TW348272B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5980657A (en) * 1998-03-10 1999-11-09 Micron Technology, Inc. Alloy for enhanced filling of high aspect ratio dual damascene structures
US6316356B1 (en) 1998-03-10 2001-11-13 Micron Technology, Inc. Thermal processing of metal alloys for an improved CMP process in integrated circuit fabrication
JP3631392B2 (ja) * 1998-11-02 2005-03-23 株式会社神戸製鋼所 配線膜の形成方法
US6535824B1 (en) * 1998-12-11 2003-03-18 Symyx Technologies, Inc. Sensor array-based system and method for rapid materials characterization
US6438497B1 (en) * 1998-12-11 2002-08-20 Symyx Technologies Method for conducting sensor array-based rapid materials characterization
US6477479B1 (en) 1998-12-11 2002-11-05 Symyx Technologies Sensor array for rapid materials characterization
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6676810B2 (en) * 2000-01-12 2004-01-13 D2 In-Line Solutions, Llc Method of coating insulative substrates
WO2001084617A1 (en) * 2000-04-27 2001-11-08 Nu Tool Inc. Conductive structure for use in multi-level metallization and process
US6500774B1 (en) * 2000-06-30 2002-12-31 Advanced Micro Devices, Inc. Method and apparatus for an increased throughput furnace nitride BARC process
US6498091B1 (en) * 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US6900106B2 (en) * 2002-03-06 2005-05-31 Micron Technology, Inc. Methods of forming capacitor constructions
EP1490527A1 (en) * 2002-03-29 2004-12-29 D2 In-Line Solutions, LLC Gravity-fed in-line continuous processing system and method
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7427426B2 (en) * 2002-11-06 2008-09-23 Tokyo Electron Limited CVD method for forming metal film by using metal carbonyl gas
KR101248927B1 (ko) * 2006-01-26 2013-03-29 주성엔지니어링(주) 광학식 열원을 포함하는 기판처리장치 및 이를 이용한 저온폴리 실리콘의 증착 방법
KR100917823B1 (ko) * 2007-12-28 2009-09-18 주식회사 동부하이텍 반도체 소자의 금속 배선 형성 방법
JP2010209410A (ja) * 2009-03-10 2010-09-24 Tokyo Electron Ltd Ｃｕ膜の成膜方法および記憶媒体
CN102569433B (zh) * 2010-12-17 2016-06-29 上海空间电源研究所 薄膜太阳电池用复合背反射金属电极及其制备方法和应用
CN102709180A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种铝薄膜的制备工艺
CN102709231A (zh) * 2012-06-11 2012-10-03 上海宏力半导体制造有限公司 一种铝衬垫成膜工艺方法
KR101301641B1 (ko) * 2012-11-29 2013-08-29 주성엔지니어링(주) 기판처리장치
US11421318B2 (en) 2018-05-04 2022-08-23 Applied Materials, Inc. Methods and apparatus for high reflectivity aluminum layers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693139A (en) * 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
US5108951A (en) * 1990-11-05 1992-04-28 Sgs-Thomson Microelectronics, Inc. Method for forming a metal contact
US5242860A (en) * 1991-07-24 1993-09-07 Applied Materials, Inc. Method for the formation of tin barrier layer with preferential (111) crystallographic orientation
US5242530A (en) * 1991-08-05 1993-09-07 International Business Machines Corporation Pulsed gas plasma-enhanced chemical vapor deposition of silicon
US5614257A (en) * 1991-08-09 1997-03-25 Applied Materials, Inc Low temperature, high pressure silicon deposition method
US5643633A (en) * 1992-12-22 1997-07-01 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor depostiton
US5503874A (en) * 1994-09-30 1996-04-02 General Electric Company Method for low temperature chemical vapor deposition of aluminides containing easily oxidized metals

Also Published As

Publication number Publication date
JPH10130846A (ja) 1998-05-19
US6017144A (en) 2000-01-25
EP0838536A3 (en) 2001-05-30
EP0838536A2 (en) 1998-04-29
KR19980033077A (ko) 1998-07-25
SG53098A1 (en) 1998-09-28

Similar Documents

Publication Publication Date Title
TW348272B (en) Method and apparatus for depositing planar and highly oriented layers
CA2146369A1 (en) Microwave Apparatus for Depositing Thin Films
WO2002067298A3 (en) Consecutive deposition system
WO2003060184A3 (en) Method and apparatus for forming silicon containing films
GB9616225D0 (en) Method of surface treatment of semiconductor substrates
AU2328399A (en) Apparatus and method for depositing a semiconductor material
WO2007040587A3 (en) Method for forming a multiple layer passivation film and a deice
EP1346085A4 (en) METHOD AND DEVICE FOR PRODUCING MN-BASED MATERIALS
TWI256422B (en) Device and method for depositing crystalline layers on crystalline substances
TW342515B (en) Process for making a field emitter cathode using a particulate field emitter material
EP0166383A3 (en) Continuous deposition of activated process gases
KR880010479A (ko) 티타늄/질화티타늄 이중층을 제조하는 방법
EP1235257A4 (en) APPARATUS FOR THE PROCESSING OF SEMICONDUCTORS
MY143286A (en) Thin film, method and apparatus for forming the same, and electronic component incorporating the same
WO2000055895A1 (en) Method of forming an aluminum oxide film
CA2231625A1 (en) Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
WO1994008076A1 (de) Heteroepitaktisch abgeschiedenes diamant
TW353194B (en) Coated deposition chamber equipment
EP0164928A3 (en) Vertical hot wall cvd reactor
KR960034479A (ko) 산화물박막의 제조방법 및 그것에 사용되는 화학증착장치
EP1170397A3 (en) Deposition of amorphous silicon films by high density plasma CVD at low temperatures
TW352479B (en) Process to producing semiconductor device and comprising device
EP0386676A3 (en) Semiconductor growth process and apparatus therefore
SE9200555D0 (sv) A method of coating a piezoelectric substrate
AU8318191A (en) Chemical vapor deposition (cvd) process for thermally depositing silicone carbide films onto a substrate