TW345689B - Process for producing silicon wafer - Google Patents
Process for producing silicon waferInfo
- Publication number
- TW345689B TW345689B TW085107533A TW85107533A TW345689B TW 345689 B TW345689 B TW 345689B TW 085107533 A TW085107533 A TW 085107533A TW 85107533 A TW85107533 A TW 85107533A TW 345689 B TW345689 B TW 345689B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon wafer
- extraction layer
- producing silicon
- forming
- defect
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 238000000605 extraction Methods 0.000 abstract 3
- 238000002425 crystallisation Methods 0.000 abstract 2
- 230000008025 crystallization Effects 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950017270A KR970003671A (ko) | 1995-06-24 | 1995-06-24 | 실리콘 웨이퍼 가공방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW345689B true TW345689B (en) | 1998-11-21 |
Family
ID=19418158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085107533A TW345689B (en) | 1995-06-24 | 1996-06-22 | Process for producing silicon wafer |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR970003671A (zh) |
| CN (1) | CN1147571A (zh) |
| TW (1) | TW345689B (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100580776B1 (ko) * | 1999-11-04 | 2006-05-15 | 주식회사 하이닉스반도체 | 반도체 소자의 게터링 방법 |
| KR100415629B1 (ko) * | 2001-08-28 | 2004-01-24 | 프로모스 테크놀로지즈 인코포레이티드 | 분자질소 주입량을 검사하기 위한 방법 |
| CN1309021C (zh) * | 2003-12-25 | 2007-04-04 | 北京有色金属研究总院 | 一种消除硅单晶片器件制作区原生坑缺陷的方法 |
| KR101385810B1 (ko) | 2006-05-19 | 2014-04-16 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법 |
| CN101770942B (zh) * | 2008-12-29 | 2011-08-24 | 北大方正集团有限公司 | 利用p型衬底硅片测量温度的方法和装置 |
| CN103632956A (zh) * | 2012-08-13 | 2014-03-12 | 上海华虹宏力半导体制造有限公司 | 防止半导体产品高温快速退火时产生缺陷的方法 |
| CN104637782B (zh) * | 2013-11-14 | 2018-08-14 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制作方法 |
| CN103872180A (zh) * | 2014-03-19 | 2014-06-18 | 武汉新芯集成电路制造有限公司 | 一种利用碳离子注入吸杂的方法 |
| CN108660513A (zh) * | 2017-03-28 | 2018-10-16 | 上海新昇半导体科技有限公司 | 一种减少晶片缺陷的设备及方法 |
| CN109524425A (zh) * | 2018-10-15 | 2019-03-26 | 上海华虹宏力半导体制造有限公司 | 绝缘体上硅结构及其制作方法 |
-
1995
- 1995-06-24 KR KR1019950017270A patent/KR970003671A/ko not_active Application Discontinuation
-
1996
- 1996-06-22 TW TW085107533A patent/TW345689B/zh not_active IP Right Cessation
- 1996-06-24 CN CN96111023A patent/CN1147571A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR970003671A (ko) | 1997-01-28 |
| CN1147571A (zh) | 1997-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |