TW345662B - Semiconductor integrated circuit device having means for peak current reduction - Google Patents

Semiconductor integrated circuit device having means for peak current reduction

Info

Publication number
TW345662B
TW345662B TW085114173A TW85114173A TW345662B TW 345662 B TW345662 B TW 345662B TW 085114173 A TW085114173 A TW 085114173A TW 85114173 A TW85114173 A TW 85114173A TW 345662 B TW345662 B TW 345662B
Authority
TW
Taiwan
Prior art keywords
operation mode
memory
activated
response
period
Prior art date
Application number
TW085114173A
Other languages
English (en)
Inventor
Takesada Akiba
Hiroshi Otori
Masayuki Nakamura
Adin Hyslop
Original Assignee
Hitachi Ltd
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Texas Instruments Inc filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW345662B publication Critical patent/TW345662B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW085114173A 1995-12-22 1996-11-19 Semiconductor integrated circuit device having means for peak current reduction TW345662B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US826495P 1995-12-22 1995-12-22

Publications (1)

Publication Number Publication Date
TW345662B true TW345662B (en) 1998-11-21

Family

ID=21730665

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114173A TW345662B (en) 1995-12-22 1996-11-19 Semiconductor integrated circuit device having means for peak current reduction

Country Status (4)

Country Link
US (1) US5793694A (zh)
JP (1) JPH09204774A (zh)
KR (1) KR100431108B1 (zh)
TW (1) TW345662B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515968B1 (en) 1995-03-17 2003-02-04 Worldcom, Inc. Integrated interface for real time web based viewing of telecommunications network call traffic
US6032184A (en) * 1995-12-29 2000-02-29 Mci Worldcom, Inc. Integrated interface for Web based customer care and trouble management
US6859783B2 (en) 1995-12-29 2005-02-22 Worldcom, Inc. Integrated interface for web based customer care and trouble management
US5781483A (en) * 1996-12-31 1998-07-14 Micron Technology, Inc. Device and method for repairing a memory array by storing each bit in multiple memory cells in the array
US7058600B1 (en) 1997-09-26 2006-06-06 Mci, Inc. Integrated proxy interface for web based data management reports
US6377993B1 (en) 1997-09-26 2002-04-23 Mci Worldcom, Inc. Integrated proxy interface for web based data management reports
US6745229B1 (en) 1997-09-26 2004-06-01 Worldcom, Inc. Web based integrated customer interface for invoice reporting
US6850446B1 (en) 2001-12-06 2005-02-01 Virage Logic Corporation Memory cell sensing with low noise generation
US7251739B1 (en) * 2003-12-31 2007-07-31 Intel Corporation System and method for sequencing multiple write state machines
JP4428319B2 (ja) 2005-08-30 2010-03-10 エルピーダメモリ株式会社 半導体記憶装置およびバンク・リフレッシュ方法
KR100854497B1 (ko) * 2006-07-10 2008-08-26 삼성전자주식회사 반도체 메모리 장치 및 이의 동작 방법
KR100822805B1 (ko) 2006-10-20 2008-04-18 삼성전자주식회사 다중 배속 동작 모드를 가지는 플래시 메모리 장치
JP2011065732A (ja) 2009-09-18 2011-03-31 Elpida Memory Inc 半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627033A (en) * 1984-08-02 1986-12-02 Texas Instruments Incorporated Sense amplifier with reduced instantaneous power
JPS6484496A (en) * 1987-09-26 1989-03-29 Mitsubishi Electric Corp Semiconductor memory
US5208782A (en) * 1989-02-09 1993-05-04 Hitachi, Ltd. Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement
JP2773465B2 (ja) * 1991-06-06 1998-07-09 三菱電機株式会社 ダイナミック型半導体記憶装置
KR950010622B1 (ko) * 1992-05-20 1995-09-20 삼성전자주식회사 비트라인 센싱 제어회로
US5442588A (en) * 1994-08-16 1995-08-15 Cirrus Logic, Inc. Circuits and methods for refreshing a dual bank memory

Also Published As

Publication number Publication date
JPH09204774A (ja) 1997-08-05
KR970051186A (ko) 1997-07-29
US5793694A (en) 1998-08-11
KR100431108B1 (ko) 2004-08-25

Similar Documents

Publication Publication Date Title
TW345662B (en) Semiconductor integrated circuit device having means for peak current reduction
EP1158532A3 (en) Semiconductor memory device
TWI256636B (en) Static RAM
EP1603136A3 (en) Semiconductor memory device
KR970051182A (ko) 반도체 기억 장치
EP0869507A3 (en) Low power memory including selective precharge circuit
US5251178A (en) Low-power integrated circuit memory
TW375739B (en) Semiconductor memory device
GB2332964A (en) A semiconductor memory device employing single data rate (SDR) and double data rate (DDR)
TW344133B (en) Semiconductor memory
KR900015154A (ko) 디-램형 집적 반도체 메모리와 그 시험방법
TW359826B (en) Semiconductor memory device with split word lines
GB2305732B (en) High speed test circuit for a semiconductor memory device
TW200511317A (en) Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency
EP0986066A3 (en) Ferroelectric memory and method of testing the same
TW328591B (en) Sense circuit
CA2188101A1 (en) Semiconductor Memory Device Having Small Chip Size and Redundancy Access Time
TW363189B (en) Semiconductor non-volatile memory apparatus and the computer system to make use of the apparatus
TW374922B (en) Synchronous semiconductor memory device having controller for reducing current consumption of DQM input buffer
TW286404B (en) Semiconductor memory device for reducing operating power consumption amount
TW342474B (en) Semiconductor IC device
TW342497B (en) Method for controlling isolation gate and circuit therefor
TW326536B (en) Single-chip memory system having a page access mode
TW332355B (en) Semiconductor device having a latch circuit for latching externally input data
EP1619690A3 (en) Semiconductor memory device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees