TW344818B - Word line driver circuit - Google Patents

Word line driver circuit

Info

Publication number
TW344818B
TW344818B TW086103654A TW86103654A TW344818B TW 344818 B TW344818 B TW 344818B TW 086103654 A TW086103654 A TW 086103654A TW 86103654 A TW86103654 A TW 86103654A TW 344818 B TW344818 B TW 344818B
Authority
TW
Taiwan
Prior art keywords
word line
line driver
driver circuit
terminal
terminal coupled
Prior art date
Application number
TW086103654A
Other languages
English (en)
Inventor
J Proebsting Robert
Original Assignee
Townsend & Townsend & Crew Llp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Townsend & Townsend & Crew Llp filed Critical Townsend & Townsend & Crew Llp
Application granted granted Critical
Publication of TW344818B publication Critical patent/TW344818B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
TW086103654A 1996-04-10 1997-03-20 Word line driver circuit TW344818B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/630,310 US5737267A (en) 1996-04-10 1996-04-10 Word line driver circuit

Publications (1)

Publication Number Publication Date
TW344818B true TW344818B (en) 1998-11-11

Family

ID=24526668

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103654A TW344818B (en) 1996-04-10 1997-03-20 Word line driver circuit

Country Status (6)

Country Link
US (1) US5737267A (zh)
EP (1) EP0801396A3 (zh)
JP (1) JPH10125060A (zh)
KR (1) KR100282082B1 (zh)
CN (1) CN1167987A (zh)
TW (1) TW344818B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19841445C2 (de) 1998-09-10 2002-04-25 Infineon Technologies Ag Halbleiter-Schaltungsanordnung
JP4439185B2 (ja) * 2003-02-07 2010-03-24 パナソニック株式会社 半導体記憶装置
US7345946B1 (en) * 2004-09-24 2008-03-18 Cypress Semiconductor Corporation Dual-voltage wordline drive circuit with two stage discharge
KR100656470B1 (ko) 2006-02-07 2006-12-11 주식회사 하이닉스반도체 반도체 메모리의 드라이버 제어장치 및 방법
JP2011044186A (ja) * 2009-08-19 2011-03-03 Oki Semiconductor Co Ltd ワード線駆動装置
US8599618B2 (en) * 2011-12-02 2013-12-03 Cypress Semiconductor Corp. High voltage tolerant row driver
CN115691595B (zh) * 2021-07-29 2024-07-05 长鑫存储技术有限公司 字线驱动器电路及存储器
US12294366B2 (en) * 2023-05-18 2025-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Level shifter with inside self-protection high bias generator

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179848B2 (ja) * 1992-03-27 2001-06-25 三菱電機株式会社 半導体記憶装置
JPH06267275A (ja) * 1993-03-10 1994-09-22 Fujitsu Ltd センスアンプ制御回路及びセンスアンプ制御方法
KR960011206B1 (ko) * 1993-11-09 1996-08-21 삼성전자 주식회사 반도체메모리장치의 워드라인구동회로

Also Published As

Publication number Publication date
JPH10125060A (ja) 1998-05-15
EP0801396A2 (en) 1997-10-15
EP0801396A3 (en) 1998-12-16
KR970071824A (ko) 1997-11-07
CN1167987A (zh) 1997-12-17
US5737267A (en) 1998-04-07
KR100282082B1 (ko) 2001-02-15

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