TW341664B - Photovoltaic oxide charge measurement probe technique - Google Patents

Photovoltaic oxide charge measurement probe technique

Info

Publication number
TW341664B
TW341664B TW084111148A TW84111148A TW341664B TW 341664 B TW341664 B TW 341664B TW 084111148 A TW084111148 A TW 084111148A TW 84111148 A TW84111148 A TW 84111148A TW 341664 B TW341664 B TW 341664B
Authority
TW
Taiwan
Prior art keywords
probe
photovoltage
oxide layer
photovoltaic
measurement probe
Prior art date
Application number
TW084111148A
Other languages
English (en)
Inventor
Fung Min-Su
Leonard Verkuil Roger
Hong Yun Bob
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW341664B publication Critical patent/TW341664B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW084111148A 1995-05-12 1995-10-21 Photovoltaic oxide charge measurement probe technique TW341664B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44050395A 1995-05-12 1995-05-12

Publications (1)

Publication Number Publication Date
TW341664B true TW341664B (en) 1998-10-01

Family

ID=23749015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111148A TW341664B (en) 1995-05-12 1995-10-21 Photovoltaic oxide charge measurement probe technique

Country Status (4)

Country Link
US (1) US5650731A (zh)
JP (1) JP3202916B2 (zh)
KR (1) KR100193977B1 (zh)
TW (1) TW341664B (zh)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661408A (en) * 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US6066952A (en) 1997-09-25 2000-05-23 International Business Machnies Corporation Method for polysilicon crystalline line width measurement post etch in undoped-poly process
ATE333652T1 (de) 1999-10-19 2006-08-15 Solid State Measurements Inc Nicht-invasive elektrische messung von halbleiterscheiben
WO2001086698A2 (en) 2000-05-10 2001-11-15 Kla-Tencor, Inc. Method and system for detecting metal contamination on a semiconductor wafer
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US6806951B2 (en) 2000-09-20 2004-10-19 Kla-Tencor Technologies Corp. Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6734696B2 (en) * 2001-11-01 2004-05-11 Kla-Tencor Technologies Corp. Non-contact hysteresis measurements of insulating films
US6894519B2 (en) * 2002-04-11 2005-05-17 Solid State Measurements, Inc. Apparatus and method for determining electrical properties of a semiconductor wafer
JP3853708B2 (ja) * 2002-07-10 2006-12-06 Ｎｅｃアクセステクニカ株式会社 デジタル画像符号化装置および符号化方法ならびにプログラム
US7012438B1 (en) 2002-07-10 2006-03-14 Kla-Tencor Technologies Corp. Methods and systems for determining a property of an insulating film
US6836139B2 (en) * 2002-10-22 2004-12-28 Solid State Measurments, Inc. Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer
US7064565B1 (en) 2002-10-31 2006-06-20 Kla-Tencor Technologies Corp. Methods and systems for determining an electrical property of an insulating film
US7248062B1 (en) 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
US7075318B1 (en) 2003-01-16 2006-07-11 Kla-Tencor Technologies Corp. Methods for imperfect insulating film electrical thickness/capacitance measurement
US6911350B2 (en) * 2003-03-28 2005-06-28 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
US6909291B1 (en) 2003-06-24 2005-06-21 Kla-Tencor Technologies Corp. Systems and methods for using non-contact voltage sensors and corona discharge guns
US7103484B1 (en) 2003-10-31 2006-09-05 Kla-Tencor Technologies Corp. Non-contact methods for measuring electrical thickness and determining nitrogen content of insulating films
US6879176B1 (en) 2003-11-04 2005-04-12 Solid State Measurements, Inc. Conductance-voltage (GV) based method for determining leakage current in dielectrics
JP4758358B2 (ja) 2004-01-29 2011-08-24 ケーエルエー−テンカー コーポレイション レチクル設計データにおける欠陥を検出するためのコンピュータに実装される方法
US7119569B2 (en) * 2004-03-05 2006-10-10 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
JP4904034B2 (ja) 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
US7769225B2 (en) 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
US7893703B2 (en) * 2005-08-19 2011-02-22 Kla-Tencor Technologies Corp. Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
WO2008077100A2 (en) 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
WO2008086282A2 (en) 2007-01-05 2008-07-17 Kla-Tencor Corporation Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8004290B1 (en) 2007-04-04 2011-08-23 Kla-Tencor Corporation Method and apparatus for determining dielectric layer properties
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US7962863B2 (en) 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) * 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US7711514B2 (en) 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
JP5425779B2 (ja) 2007-08-20 2014-02-26 ケーエルエー−テンカー・コーポレーション 実際の欠陥が潜在的にシステム的な欠陥であるか、または潜在的にランダムな欠陥であるかを判断する、コンピューターに実装された方法
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US9659670B2 (en) * 2008-07-28 2017-05-23 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8791712B2 (en) 2012-02-02 2014-07-29 International Business Machines Corporation 3-dimensional integrated circuit testing using MEMS switches with tungsten cone contacts
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
WO2014149197A1 (en) 2013-02-01 2014-09-25 Kla-Tencor Corporation Detecting defects on a wafer using defect-specific and multi-channel information
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
CN111856236B (zh) * 2020-07-28 2022-07-12 哈尔滨工业大学 提取电子器件氧化层中负电荷的方法
CN111751698B (zh) * 2020-07-28 2022-11-25 哈尔滨工业大学 电子器件氧化层中固定正电荷陷阱的检测方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3116611C2 (de) * 1980-05-01 1985-05-15 Hitachi, Ltd., Tokio/Tokyo Vorrichtung zur Messung von Halbleitereigenschaften
US4563642A (en) * 1981-10-09 1986-01-07 Hitachi, Ltd. Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction
US4544887A (en) * 1982-10-21 1985-10-01 Gte Laboratories Incorporated Method of measuring photo-induced voltage at the surface of semiconductor materials
US4859939A (en) * 1987-12-21 1989-08-22 The United States Of America As Represented By The Secretary Of The Army Non-destructive testing of SOS wafers using surface photovoltage measurements
US4827212A (en) * 1988-01-20 1989-05-02 Semitest, Inc. Noninvasive method and apparatus for characterization of semiconductors
US4891584A (en) * 1988-03-21 1990-01-02 Semitest, Inc. Apparatus for making surface photovoltage measurements of a semiconductor
US5091691A (en) * 1988-03-21 1992-02-25 Semitest, Inc. Apparatus for making surface photovoltage measurements of a semiconductor
IT1216540B (it) * 1988-03-29 1990-03-08 Sgs Thomson Microelectronics Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico.
US5025145A (en) * 1988-08-23 1991-06-18 Lagowski Jacek J Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements
US5017863A (en) * 1989-10-20 1991-05-21 Digital Equipment Corporation Electro-emissive laser stimulated test
US5087876A (en) * 1990-07-16 1992-02-11 Semitest, Inc. Apparatus and method for making surface photovoltage measurements of a semiconductor
US5138256A (en) * 1991-04-23 1992-08-11 International Business Machines Corp. Method and apparatus for determining the thickness of an interfacial polysilicon/silicon oxide film
JPH0714898A (ja) * 1993-06-23 1995-01-17 Mitsubishi Electric Corp 半導体ウエハの試験解析装置および解析方法
US5500607A (en) * 1993-12-22 1996-03-19 International Business Machines Corporation Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer

Also Published As

Publication number Publication date
JP3202916B2 (ja) 2001-08-27
US5650731A (en) 1997-07-22
KR960043070A (ko) 1996-12-23
KR100193977B1 (ko) 1999-06-15
JPH08316276A (ja) 1996-11-29

Similar Documents

Publication Publication Date Title
TW341664B (en) Photovoltaic oxide charge measurement probe technique
TW347467B (en) Method and apparatus for testing an electrically conductive substrate
NZ506914A (en) Optical translation measurement
US7737681B1 (en) Non contact method and apparatus for measurement of sheet resistance of P-N junctions
EP0118199A1 (en) An apparatus for measuring carrier lifetimes in a semiconductor
JPS58500465A (ja) 改良されたフオトデイテクタ−
TW324063B (en) Two dimensional sensor with photoconductive layer used for measurement of cell activity
WO2001061745A3 (en) Surface passivation method and arrangement for measuring the lifetime of minority carriers in semiconductors
ATE254324T1 (de) Flüssigkeitsmeldeeinrichtung
AU5288499A (en) Method for measuring spectral absorption in a body and device therefor
JPS644045A (en) Inspection device
WO2007100319A1 (en) Non contact method and apparatus for measurement of sheet resistance and leakage current of p-n junctions
JPS628022B2 (zh)
JPS6242537Y2 (zh)
FR2763122B1 (fr) Dispositif de mesure de position et de deplacement sans contact
SU1116473A1 (ru) Фотоприемник
JPS5717873A (en) Inspection method of semiconductor element
JPS6320016B2 (zh)
JPH06112290A (ja) 半導体評価装置
Stricot et al. Optoelectrochemical impedance measurements: A new technique for the electrical characterization of dielectric/semiconductor interfaces
JPS6144437A (ja) 半導体特性測定装置
JPS63317707A (ja) 面積測定方法
JPS622111A (ja) 反射光による表面粗さ計
JPS5437471A (en) Code reading device for wafer
JPS6442143A (en) Noncontact carrier mobility measuring device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees