JPS628022B2 - - Google Patents
Info
- Publication number
- JPS628022B2 JPS628022B2 JP56051793A JP5179381A JPS628022B2 JP S628022 B2 JPS628022 B2 JP S628022B2 JP 56051793 A JP56051793 A JP 56051793A JP 5179381 A JP5179381 A JP 5179381A JP S628022 B2 JPS628022 B2 JP S628022B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- light beam
- cathode ray
- ray tube
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000001360 synchronised effect Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000000284 extract Substances 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000523 sample Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 238000010894 electron beam technology Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 241000207439 Myra Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5179381A JPS56155543A (en) | 1981-04-08 | 1981-04-08 | Measuring device for semiconductor characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5179381A JPS56155543A (en) | 1981-04-08 | 1981-04-08 | Measuring device for semiconductor characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56155543A JPS56155543A (en) | 1981-12-01 |
| JPS628022B2 true JPS628022B2 (zh) | 1987-02-20 |
Family
ID=12896813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5179381A Granted JPS56155543A (en) | 1981-04-08 | 1981-04-08 | Measuring device for semiconductor characteristic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56155543A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5881944U (ja) * | 1981-11-27 | 1983-06-03 | 株式会社日立製作所 | 半導体ウエハ検査装置 |
| JPS5982740A (ja) * | 1982-11-02 | 1984-05-12 | Nec Corp | 高抵抗半導体ウエハの評価方法 |
| CN115032236A (zh) * | 2021-03-04 | 2022-09-09 | 光颉科技股份有限公司 | 电阻元件金属层杂质的检测方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54136182A (en) * | 1978-04-13 | 1979-10-23 | Fumio Horiguchi | Method of measuring nonncontact semiconductor wafer characteristics |
-
1981
- 1981-04-08 JP JP5179381A patent/JPS56155543A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54136182A (en) * | 1978-04-13 | 1979-10-23 | Fumio Horiguchi | Method of measuring nonncontact semiconductor wafer characteristics |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56155543A (en) | 1981-12-01 |
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