TW339477B - Novel method of contact structure formation - Google Patents
Novel method of contact structure formationInfo
- Publication number
- TW339477B TW339477B TW086111700A TW86111700A TW339477B TW 339477 B TW339477 B TW 339477B TW 086111700 A TW086111700 A TW 086111700A TW 86111700 A TW86111700 A TW 86111700A TW 339477 B TW339477 B TW 339477B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- formation
- gaps
- filling
- contact structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/784,158 US6121129A (en) | 1997-01-15 | 1997-01-15 | Method of contact structure formation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW339477B true TW339477B (en) | 1998-09-01 |
Family
ID=25131530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086111700A TW339477B (en) | 1997-01-15 | 1997-08-14 | Novel method of contact structure formation |
Country Status (6)
Country | Link |
---|---|
US (1) | US6121129A (zh) |
EP (1) | EP0854508B1 (zh) |
JP (1) | JP3024092B2 (zh) |
KR (1) | KR100258655B1 (zh) |
DE (1) | DE69738705D1 (zh) |
TW (1) | TW339477B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5907781A (en) * | 1998-03-27 | 1999-05-25 | Advanced Micro Devices, Inc. | Process for fabricating an integrated circuit with a self-aligned contact |
US6444530B1 (en) | 1999-05-25 | 2002-09-03 | Advanced Micro Devices, Inc. | Process for fabricating an integrated circuit with a self-aligned contact |
US6441418B1 (en) | 1999-11-01 | 2002-08-27 | Advanced Micro Devices, Inc. | Spacer narrowed, dual width contact for charge gain reduction |
US6551923B1 (en) | 1999-11-01 | 2003-04-22 | Advanced Micro Devices, Inc. | Dual width contact for charge gain reduction |
US6274409B1 (en) * | 2000-01-18 | 2001-08-14 | Agere Systems Guardian Corp. | Method for making a semiconductor device |
US6534389B1 (en) * | 2000-03-09 | 2003-03-18 | International Business Machines Corporation | Dual level contacts and method for forming |
US6544850B1 (en) * | 2000-04-19 | 2003-04-08 | Infineon Technologies Ag | Dynamic random access memory |
US6333254B1 (en) | 2000-12-14 | 2001-12-25 | Micron Technology, Inc. | Methods of forming a local interconnect method of fabricating integrated circuitry comprising an SRAM cell having a local interconnect and having circuitry peripheral to the SRAM cell and method of forming contact plugs |
KR100380348B1 (ko) * | 2001-01-11 | 2003-04-11 | 삼성전자주식회사 | 자기 정렬 콘택의 게이트 스페이서를 형성하는 방법 |
US6376351B1 (en) * | 2001-06-28 | 2002-04-23 | Taiwan Semiconductor Manufacturing Company | High Fmax RF MOSFET with embedded stack gate |
US6730553B2 (en) * | 2001-08-30 | 2004-05-04 | Micron Technology, Inc. | Methods for making semiconductor structures having high-speed areas and high-density areas |
US8405216B2 (en) * | 2005-06-29 | 2013-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure for integrated circuits |
US8258057B2 (en) * | 2006-03-30 | 2012-09-04 | Intel Corporation | Copper-filled trench contact for transistor performance improvement |
US7901976B1 (en) * | 2006-05-18 | 2011-03-08 | Cypress Semiconductor Corporation | Method of forming borderless contacts |
US7772064B2 (en) * | 2007-03-05 | 2010-08-10 | United Microelectronics Corp. | Method of fabricating self-aligned contact |
US7968950B2 (en) * | 2007-06-27 | 2011-06-28 | Texas Instruments Incorporated | Semiconductor device having improved gate electrode placement and decreased area design |
US7832097B1 (en) * | 2008-01-23 | 2010-11-16 | Amkor Technology, Inc. | Shielded trace structure and fabrication method |
CN102446818A (zh) * | 2011-07-01 | 2012-05-09 | 上海华力微电子有限公司 | 一种改善刻蚀通孔工艺中刻蚀终点均匀性的方法 |
US9330971B2 (en) * | 2014-03-04 | 2016-05-03 | GlobalFoundries, Inc. | Method for fabricating integrated circuits including contacts for metal resistors |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60167328A (ja) * | 1984-02-10 | 1985-08-30 | Hitachi Ltd | 露光方法 |
US4855252A (en) * | 1988-08-22 | 1989-08-08 | International Business Machines Corporation | Process for making self-aligned contacts |
JPH07114210B2 (ja) * | 1990-01-26 | 1995-12-06 | 株式会社東芝 | 半導体装置の製造方法 |
US5189506A (en) * | 1990-06-29 | 1993-02-23 | International Business Machines Corporation | Triple self-aligned metallurgy for semiconductor devices |
EP0469214A1 (en) * | 1990-07-31 | 1992-02-05 | International Business Machines Corporation | Method of forming stacked conductive and/or resistive polysilicon lands in multilevel semiconductor chips and structures resulting therefrom |
US5126006A (en) * | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
US5266446A (en) * | 1990-11-15 | 1993-11-30 | International Business Machines Corporation | Method of making a multilayer thin film structure |
JP3123092B2 (ja) * | 1991-03-06 | 2001-01-09 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2875093B2 (ja) * | 1992-03-17 | 1999-03-24 | 三菱電機株式会社 | 半導体装置 |
US5354712A (en) * | 1992-11-12 | 1994-10-11 | Northern Telecom Limited | Method for forming interconnect structures for integrated circuits |
KR0136684B1 (en) * | 1993-06-01 | 1998-04-29 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
US5424154A (en) * | 1993-12-10 | 1995-06-13 | Intel Corporation | Lithographic emhancement method and apparatus for randomly spaced structures |
US5563012A (en) * | 1994-06-30 | 1996-10-08 | International Business Machines Corporation | Multi mask method for selective mask feature enhancement |
US5472814A (en) * | 1994-11-17 | 1995-12-05 | International Business Machines Corporation | Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement |
US5792703A (en) * | 1996-03-20 | 1998-08-11 | International Business Machines Corporation | Self-aligned contact wiring process for SI devices |
-
1997
- 1997-01-15 US US08/784,158 patent/US6121129A/en not_active Expired - Lifetime
- 1997-08-14 TW TW086111700A patent/TW339477B/zh not_active IP Right Cessation
- 1997-12-11 KR KR1019970067685A patent/KR100258655B1/ko not_active IP Right Cessation
- 1997-12-19 EP EP97310318A patent/EP0854508B1/en not_active Expired - Lifetime
- 1997-12-19 DE DE69738705T patent/DE69738705D1/de not_active Expired - Lifetime
-
1998
- 1998-01-07 JP JP10001542A patent/JP3024092B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100258655B1 (ko) | 2000-06-15 |
EP0854508A3 (en) | 1999-01-13 |
DE69738705D1 (de) | 2008-07-03 |
EP0854508B1 (en) | 2008-05-21 |
KR19980070148A (ko) | 1998-10-26 |
JPH10209071A (ja) | 1998-08-07 |
JP3024092B2 (ja) | 2000-03-21 |
EP0854508A2 (en) | 1998-07-22 |
US6121129A (en) | 2000-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |