TW339476B - Semiconductor component having a devided floating gate - Google Patents

Semiconductor component having a devided floating gate

Info

Publication number
TW339476B
TW339476B TW086104354A TW86104354A TW339476B TW 339476 B TW339476 B TW 339476B TW 086104354 A TW086104354 A TW 086104354A TW 86104354 A TW86104354 A TW 86104354A TW 339476 B TW339476 B TW 339476B
Authority
TW
Taiwan
Prior art keywords
port
area
path
mixture
conductor
Prior art date
Application number
TW086104354A
Other languages
English (en)
Inventor
Kakoschke Ronale
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW339476B publication Critical patent/TW339476B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
TW086104354A 1996-04-09 1997-04-07 Semiconductor component having a devided floating gate TW339476B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19614011A DE19614011C2 (de) 1996-04-09 1996-04-09 Halbleiterbauelement, bei dem die Tunnelgateelektrode und die Kanalgateelektrode an der Grenzfläche zum Tunneldielektrikum bzw. Gatedielektrikum durch eine Isolationsstruktur unterbrochen sind

Publications (1)

Publication Number Publication Date
TW339476B true TW339476B (en) 1998-09-01

Family

ID=7790802

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104354A TW339476B (en) 1996-04-09 1997-04-07 Semiconductor component having a devided floating gate

Country Status (7)

Country Link
US (1) US6177702B1 (zh)
EP (1) EP0892990A1 (zh)
JP (1) JP3732522B2 (zh)
KR (1) KR100349519B1 (zh)
DE (1) DE19614011C2 (zh)
TW (1) TW339476B (zh)
WO (1) WO1997038446A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604850B1 (ko) * 2003-05-20 2006-07-31 삼성전자주식회사 균일하지 않은 채널 유전막 두께를 갖는 이이피롬 셀 구조및 그 제조방법
US7256449B2 (en) * 2003-05-20 2007-08-14 Samsung Electronics, Co., Ltd. EEPROM device for increasing a coupling ratio and fabrication method thereof
US20040232476A1 (en) * 2003-05-20 2004-11-25 Kang Sung-Taeg EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same
KR101334844B1 (ko) * 2011-12-29 2013-12-05 주식회사 동부하이텍 싱글 폴리형 이이피롬과 그 제조 방법
US8735271B2 (en) 2012-08-24 2014-05-27 International Business Machines Corporation Gate tunable tunnel diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121680A (ja) * 1982-01-12 1983-07-20 Mitsubishi Electric Corp 半導体不揮発性記憶装置
JPS61276375A (ja) * 1985-05-29 1986-12-06 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド 集積回路ｅｅｐｒｏｍセルおよびその製作方法
JPH05226662A (ja) * 1992-02-18 1993-09-03 Matsushita Electron Corp 半導体記憶装置
JP3233998B2 (ja) * 1992-08-28 2001-12-04 株式会社東芝 不揮発性半導体記憶装置の製造方法
US5859455A (en) * 1992-12-31 1999-01-12 Yu; Shih-Chiang Non-volatile semiconductor memory cell with control gate and floating gate and select gate located above the channel
EP0655785B1 (en) * 1993-11-30 2001-10-17 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and its manufacturing method
US5404037A (en) * 1994-03-17 1995-04-04 National Semiconductor Corporation EEPROM cell with the drain diffusion region self-aligned to the tunnel oxide region
US5429960A (en) * 1994-11-28 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory
KR0142604B1 (ko) * 1995-03-22 1998-07-01 김주용 플래쉬 이이피롬 셀 및 그 제조방법
EP0802569B1 (en) * 1996-04-15 2003-09-24 STMicroelectronics S.r.l. FLASH-EPROM integrated with EEPROM
US5840607A (en) * 1996-10-11 1998-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming undoped/in-situ doped/undoped polysilicon sandwich for floating gate application
US5889700A (en) * 1997-05-05 1999-03-30 National Semiconductor Corporation High density EEPROM array using self-aligned control gate and floating gate for both access transistor and memory cell and method of operating same

Also Published As

Publication number Publication date
KR100349519B1 (ko) 2002-12-18
DE19614011C2 (de) 2002-06-13
KR20000005304A (ko) 2000-01-25
DE19614011A1 (de) 1997-10-16
WO1997038446A1 (de) 1997-10-16
US6177702B1 (en) 2001-01-23
EP0892990A1 (de) 1999-01-27
JP2001508938A (ja) 2001-07-03
JP3732522B2 (ja) 2006-01-05

Similar Documents

Publication Publication Date Title
TW343391B (en) Nonvolatile semiconductor memory and methods for manufacturing and using the same
EP0371785A3 (en) Lateral conductivity modulated mosfet
TW355807B (en) Thin-film electron emitter device having a multilayer top electrode from suppressing degradation of an insulating layer and application equipment using the same
MY118479A (en) Analogue misfet with threshold voltage adjuster
EP0086372A3 (en) Tunneling gate semiconductor device
TW336348B (en) Integrated circuit having a dummy structure and method of making the same
TW337587B (en) Field emission device ARC-suppressor
TW336190B (en) All-purpose saw blade
GB2325939A (en) Thermally conductive chuck for vacuum processor
EP0847091A3 (en) Low voltage eeprom/nvram transistors and making method
EP0373893A3 (en) Mos type field effect transistor formed on a semiconductor layer on an insulator substrate
EP0118921A3 (en) Mosfet with high density of integration and low on resistance
TW339476B (en) Semiconductor component having a devided floating gate
TW335554B (en) Semiconductor component with compensation implantation and method for production
ATE105612T1 (de) Elektrisch isoliertes waelzlager.
TW329557B (en) ESD sensor and method of use
EP0219241A3 (en) Non-volatile semiconductor memory
TW359005B (en) Method for manufacturing mixed circuit bi-gap wall structure
AU4111797A (en) Conductive sealing material and profiled sealing member
TW351860B (en) Memory cell arrangement and method for its production
EP0202711A3 (en) Membrane for membrane switches and composing elements thereof
EP0399527A3 (en) Non-volatile semiconductor memory device
DE69827711D1 (de) Schalter mit Selbstbeblasung mit reduzierter Kompression
TW357462B (en) A thin film transistor having a vertical structure and a method of manufacturing the same the invention relates to a thin film transistor having a vertical structure and a method of manufacturing the same
TW356567B (en) Planarized gate conductor on substrate with above-surface isolation

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent