TW335511B - Stress control by fluorination of silica film - Google Patents

Stress control by fluorination of silica film

Info

Publication number
TW335511B
TW335511B TW086110077A TW86110077A TW335511B TW 335511 B TW335511 B TW 335511B TW 086110077 A TW086110077 A TW 086110077A TW 86110077 A TW86110077 A TW 86110077A TW 335511 B TW335511 B TW 335511B
Authority
TW
Taiwan
Prior art keywords
fluorination
stress control
silica film
introduction
selected speed
Prior art date
Application number
TW086110077A
Other languages
English (en)
Inventor
Nowak Romuald
C Pickering Jonathan
Sinha Ashok
Robles Stuardo
Verma Amrita
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW335511B publication Critical patent/TW335511B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
TW086110077A 1996-08-02 1997-07-16 Stress control by fluorination of silica film TW335511B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69198396A 1996-08-02 1996-08-02

Publications (1)

Publication Number Publication Date
TW335511B true TW335511B (en) 1998-07-01

Family

ID=24778795

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110077A TW335511B (en) 1996-08-02 1997-07-16 Stress control by fluorination of silica film

Country Status (4)

Country Link
EP (1) EP0822585A3 (zh)
JP (1) JPH1079387A (zh)
KR (1) KR100297421B1 (zh)
TW (1) TW335511B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451686B1 (en) * 1997-09-04 2002-09-17 Applied Materials, Inc. Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
US6200911B1 (en) 1998-04-21 2001-03-13 Applied Materials, Inc. Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
WO1999054521A2 (en) * 1998-04-21 1999-10-28 Applied Materials, Inc. Method and apparatus for modifying the profile of high-aspect-ratio gaps using differential plasma power
EP1054444A1 (en) * 1999-05-19 2000-11-22 Applied Materials, Inc. Process for depositing a porous, low dielectric constant silicon oxide film
JP2002030440A (ja) * 2000-07-18 2002-01-31 National Institute Of Advanced Industrial & Technology 傾斜材料およびその合成、加工方法
US6753270B1 (en) 2000-08-04 2004-06-22 Applied Materials Inc. Process for depositing a porous, low dielectric constant silicon oxide film
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US6667248B2 (en) 2001-09-05 2003-12-23 Applied Materials Inc. Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers
US7001837B2 (en) * 2003-01-17 2006-02-21 Advanced Micro Devices, Inc. Semiconductor with tensile strained substrate and method of making the same
US20050287747A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
US7571698B2 (en) 2005-01-10 2009-08-11 Applied Materials, Inc. Low-frequency bias power in HDP-CVD processes
KR100785373B1 (ko) * 2006-04-05 2007-12-18 주식회사 래디언테크 플라즈마 처리 장치
KR102426960B1 (ko) * 2015-10-15 2022-08-01 주식회사 테스 플라즈마를 이용하여 실리콘 산화막을 형성하는 방법
KR102036697B1 (ko) 2018-06-15 2019-10-28 주식회사 글로벌스탠다드테크놀로지 입자를 포함하는 유체의 흐름을 제어하기 위한 매니폴드를 포함하는 미모 시스템
JP7153499B2 (ja) * 2018-08-08 2022-10-14 東京エレクトロン株式会社 酸素含有被処理体の処理方法及び処理装置
CN114752921B (zh) * 2021-01-08 2023-08-18 江苏鲁汶仪器股份有限公司 一种倒装芯片中的镀膜方法

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JPH01122126A (ja) * 1987-09-29 1989-05-15 Texas Instr Inc <Ti> 組成物、薄膜をデポジツトする装置と方法
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
US5082517A (en) * 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
JP2543642B2 (ja) * 1991-01-18 1996-10-16 アプライド マテリアルズ インコーポレイテッド 高周波交流電気エネルギ―と相対的に低い周波数の交流電気的エネルギ―を有する、工作物を処理するためのシステムおよび方法
DE69224640T2 (de) * 1991-05-17 1998-10-01 Lam Res Corp VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT
JPH0521382A (ja) * 1991-07-10 1993-01-29 Sony Corp スパツタリング装置
US5483636A (en) * 1993-02-03 1996-01-09 Texas Instruments Incorporated Automated diagnosis using wafer tracking databases
JP3283344B2 (ja) * 1993-07-09 2002-05-20 沖電気工業株式会社 半導体素子の製造方法
JPH07111261A (ja) * 1993-08-16 1995-04-25 Canon Sales Co Inc 成膜装置及び成膜方法
US5520969A (en) * 1994-02-04 1996-05-28 Applied Materials, Inc. Method for in-situ liquid flow rate estimation and verification
JPH07254592A (ja) * 1994-03-16 1995-10-03 Fujitsu Ltd 半導体装置の製造方法
EP0724286A1 (en) * 1995-01-25 1996-07-31 Applied Materials, Inc. A method of forming a thin film of silicon oxide for a semiconductor device
US5571576A (en) * 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
EP0759481A1 (en) * 1995-06-23 1997-02-26 Novellus Systems, Inc. Method of depositing a stable fluorinated TEOS film
JPH0964176A (ja) * 1995-08-21 1997-03-07 Oki Electric Ind Co Ltd 半導体素子の製造方法

Also Published As

Publication number Publication date
KR19980018440A (ko) 1998-06-05
EP0822585A3 (en) 1999-01-13
KR100297421B1 (ko) 2001-08-30
EP0822585A2 (en) 1998-02-04
JPH1079387A (ja) 1998-03-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees