TW332322B - Manufacturing method for etchant and electronic element of conductive semiconductor - Google Patents

Manufacturing method for etchant and electronic element of conductive semiconductor

Info

Publication number
TW332322B
TW332322B TW084103143A TW84103143A TW332322B TW 332322 B TW332322 B TW 332322B TW 084103143 A TW084103143 A TW 084103143A TW 84103143 A TW84103143 A TW 84103143A TW 332322 B TW332322 B TW 332322B
Authority
TW
Taiwan
Prior art keywords
etchant
manufacturing
conductive semiconductor
electronic element
conductive
Prior art date
Application number
TW084103143A
Other languages
English (en)
Inventor
Matagorou Maeno
Masayuki Miyashita
Hirohisa Kikuyama
Tatsuhiro Yabune
Jun Takano
Ohmi Tadahiro
Yasuhiko Kasama
Original Assignee
Furontec Kk
Oomi Tadahiro
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6063789A external-priority patent/JP2792550B2/ja
Priority claimed from JP6151376A external-priority patent/JP2731114B2/ja
Application filed by Furontec Kk, Oomi Tadahiro filed Critical Furontec Kk
Application granted granted Critical
Publication of TW332322B publication Critical patent/TW332322B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
TW084103143A 1994-03-31 1995-03-31 Manufacturing method for etchant and electronic element of conductive semiconductor TW332322B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6063789A JP2792550B2 (ja) 1994-03-31 1994-03-31 エッチング剤
JP6151376A JP2731114B2 (ja) 1994-07-01 1994-07-01 電子素子及びその製造方法

Publications (1)

Publication Number Publication Date
TW332322B true TW332322B (en) 1998-05-21

Family

ID=26404915

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084103143A TW332322B (en) 1994-03-31 1995-03-31 Manufacturing method for etchant and electronic element of conductive semiconductor

Country Status (3)

Country Link
US (1) US5714407A (zh)
KR (1) KR0154252B1 (zh)
TW (1) TW332322B (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
JPH1117188A (ja) * 1997-06-23 1999-01-22 Sharp Corp アクティブマトリクス基板
AT410043B (de) * 1997-09-30 2003-01-27 Sez Ag Verfahren zum planarisieren von halbleitersubstraten
KR100464305B1 (ko) * 1998-07-07 2005-04-13 삼성전자주식회사 에챈트를이용한pzt박막의청소방법
JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
US6833084B2 (en) * 1999-04-05 2004-12-21 Micron Technology, Inc. Etching compositions
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
KR100924479B1 (ko) * 2001-07-23 2009-11-03 소니 가부시끼 가이샤 에칭 방법 및 에칭액
JP2003218084A (ja) * 2002-01-24 2003-07-31 Nec Electronics Corp 除去液、半導体基板の洗浄方法および半導体装置の製造方法
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
AU2003286616A1 (en) * 2002-10-25 2004-05-25 Intersurface Dynamics, Inc. Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics
EP1694867B1 (en) * 2003-12-15 2009-10-28 Geneohm Sciences, Inc. Carbon electrode surface for attachment of dna and protein molecules
KR20050089381A (ko) * 2004-03-04 2005-09-08 삼성에스디아이 주식회사 액티브 매트릭스형 표시 장치의 제조방법
JP4400281B2 (ja) * 2004-03-29 2010-01-20 信越半導体株式会社 シリコンウエーハの結晶欠陥評価方法
CN102544027B (zh) 2004-09-15 2016-02-17 株式会社半导体能源研究所 半导体器件
WO2007049750A1 (ja) * 2005-10-28 2007-05-03 Kanto Kagaku Kabushiki Kaisha パラジウム選択的エッチング液およびエッチングの選択性を制御する方法
JP5017709B2 (ja) 2006-09-07 2012-09-05 ジルトロニック アクチエンゲゼルシャフト シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法
EP1918985B1 (en) * 2006-10-31 2010-05-26 S.O.I.TEC. Silicon on Insulator Technologies S.A. Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition
US8801867B2 (en) * 2007-07-31 2014-08-12 X-Flow B.V. Method for cleaning filter membranes
JP2013540090A (ja) * 2010-09-16 2013-10-31 スペックマット インコーポレイテッド 高効率かつ低コストの結晶珪素太陽電池セルのための方法、プロセス、及び製造技術
SI23106A (sl) * 2010-10-11 2011-01-31 UNIVERZA V MARIBORU FAKULTETA ZA STROJNIĹ TVO Tonica BonÄŤina Postopek dinamičnega globokega jedkanja in ekstrahiranja delcev iz aluminijevih zlitin
CN105453238B (zh) * 2013-06-11 2020-11-10 斯派克迈特股份有限公司 用于半导体制造过程和/或方法的化学组合物、使用其制得的装置
US10619097B2 (en) 2014-06-30 2020-04-14 Specmat, Inc. Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation
JP6486957B2 (ja) * 2014-10-31 2019-03-20 富士フイルム株式会社 Ｍｒａｍドライエッチング残渣除去組成物、磁気抵抗メモリの製造方法、及び、コバルト除去組成物
CN105047568B (zh) * 2015-09-07 2018-01-09 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示面板
JP6941959B2 (ja) * 2017-03-31 2021-09-29 関東化学株式会社 エッチング液組成物およびエッチング方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578419A (en) * 1985-03-28 1986-03-25 Amchem Products, Inc. Iodine compound activation of autodeposition baths
US5300463A (en) * 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP2681433B2 (ja) * 1992-09-30 1997-11-26 株式会社フロンテック エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法

Also Published As

Publication number Publication date
US5714407A (en) 1998-02-03
KR0154252B1 (ko) 1998-12-01

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