TW329051B - Voltage geneator - Google Patents
Voltage geneatorInfo
- Publication number
- TW329051B TW329051B TW086108163A TW86108163A TW329051B TW 329051 B TW329051 B TW 329051B TW 086108163 A TW086108163 A TW 086108163A TW 86108163 A TW86108163 A TW 86108163A TW 329051 B TW329051 B TW 329051B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- oscillator
- pump
- controlling
- pulse signal
- Prior art date
Links
- 238000005086 pumping Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960025752A KR100228766B1 (ko) | 1996-06-29 | 1996-06-29 | 내부 전위 발생장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW329051B true TW329051B (en) | 1998-04-01 |
Family
ID=19464749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086108163A TW329051B (en) | 1996-06-29 | 1997-06-13 | Voltage geneator |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5847596A (zh) |
| JP (1) | JP2845363B2 (zh) |
| KR (1) | KR100228766B1 (zh) |
| DE (1) | DE19727443A1 (zh) |
| GB (1) | GB2314979B (zh) |
| TW (1) | TW329051B (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100520138B1 (ko) * | 2002-11-28 | 2005-10-10 | 주식회사 하이닉스반도체 | 펌핑전압 발생장치 |
| US7477097B2 (en) * | 2005-09-29 | 2009-01-13 | Hynix Semiconductor Inc. | Internal voltage generating circuit |
| KR100871390B1 (ko) | 2007-10-23 | 2008-12-02 | 주식회사 하이닉스반도체 | 전원 생성 장치 및 그에 적용 가능한 발진 회로 |
| KR100939169B1 (ko) | 2007-11-30 | 2010-01-28 | 주식회사 하이닉스반도체 | 전압 발생 장치 |
| JP2010109606A (ja) * | 2008-10-29 | 2010-05-13 | Mitsumi Electric Co Ltd | カウンタ回路 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4438346A (en) * | 1981-10-15 | 1984-03-20 | Advanced Micro Devices, Inc. | Regulated substrate bias generator for random access memory |
| KR960005387Y1 (ko) * | 1992-09-24 | 1996-06-28 | 문정환 | 반도체 메모리의 번 인 테스트(Burn-In Test) 장치 |
| KR960000837B1 (ko) * | 1992-12-02 | 1996-01-13 | 삼성전자주식회사 | 반도체 메모리장치 |
| US5394320A (en) * | 1993-10-15 | 1995-02-28 | Micron Semiconductor, Inc. | Low voltage charge pump circuit and method for pumping a node to an electrical potential |
| US5677649A (en) * | 1994-08-17 | 1997-10-14 | Micron Technology, Inc. | Frequency-variable oscillator controlled high efficiency charge pump |
-
1996
- 1996-06-29 KR KR1019960025752A patent/KR100228766B1/ko not_active Expired - Fee Related
-
1997
- 1997-06-12 GB GB9712283A patent/GB2314979B/en not_active Expired - Fee Related
- 1997-06-13 TW TW086108163A patent/TW329051B/zh not_active IP Right Cessation
- 1997-06-20 JP JP9164707A patent/JP2845363B2/ja not_active Expired - Fee Related
- 1997-06-27 DE DE19727443A patent/DE19727443A1/de not_active Withdrawn
- 1997-06-30 US US08/885,835 patent/US5847596A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5847596A (en) | 1998-12-08 |
| GB9712283D0 (en) | 1997-08-13 |
| JP2845363B2 (ja) | 1999-01-13 |
| KR100228766B1 (ko) | 1999-11-01 |
| GB2314979B (en) | 2000-07-19 |
| GB2314979A (en) | 1998-01-14 |
| JPH1065102A (ja) | 1998-03-06 |
| KR980005002A (ko) | 1998-03-30 |
| DE19727443A1 (de) | 1998-01-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |