TW323400B - - Google Patents
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- Publication number
- TW323400B TW323400B TW085114172A TW85114172A TW323400B TW 323400 B TW323400 B TW 323400B TW 085114172 A TW085114172 A TW 085114172A TW 85114172 A TW85114172 A TW 85114172A TW 323400 B TW323400 B TW 323400B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- aforementioned
- power supply
- circuit
- voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 230000001939 inductive effect Effects 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 13
- 230000006870 function Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 14
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 102100040489 DNA damage-regulated autophagy modulator protein 2 Human genes 0.000 description 1
- 101000968012 Homo sapiens DNA damage-regulated autophagy modulator protein 2 Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US939796P | 1996-01-16 | 1996-01-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW323400B true TW323400B (enExample) | 1997-12-21 |
Family
ID=21737403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085114172A TW323400B (enExample) | 1996-01-16 | 1996-11-19 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6028800A (enExample) |
| JP (1) | JPH09198865A (enExample) |
| KR (1) | KR970060209A (enExample) |
| TW (1) | TW323400B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100272612B1 (ko) * | 1998-08-18 | 2000-12-01 | 김영환 | 센스 앰프 드라이버 제어 방법 |
| KR100743624B1 (ko) * | 2004-12-29 | 2007-07-27 | 주식회사 하이닉스반도체 | 전력 소모를 줄인 반도체 장치 |
| KR100940265B1 (ko) * | 2007-10-31 | 2010-02-04 | 주식회사 하이닉스반도체 | 센스앰프 전원공급 회로 |
| KR102118349B1 (ko) * | 2013-10-31 | 2020-06-04 | 서울시립대학교 산학협력단 | 게이트 구동 회로, 스위치 장치 및 이를 갖는 전원 공급 장치 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920001325B1 (ko) * | 1989-06-10 | 1992-02-10 | 삼성전자 주식회사 | 메모리 소자내의 센스 앰프 드라이버 |
-
1996
- 1996-07-05 JP JP8176305A patent/JPH09198865A/ja active Pending
- 1996-10-15 US US08/732,777 patent/US6028800A/en not_active Expired - Lifetime
- 1996-11-19 TW TW085114172A patent/TW323400B/zh not_active IP Right Cessation
- 1996-12-30 KR KR1019960076672A patent/KR970060209A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09198865A (ja) | 1997-07-31 |
| KR970060209A (ko) | 1997-08-12 |
| US6028800A (en) | 2000-02-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |