JPH09198865A - 半導体メモリ、半導体集積回路装置、制御回路、論理回路、および論理回路の特性を調節する方法 - Google Patents

半導体メモリ、半導体集積回路装置、制御回路、論理回路、および論理回路の特性を調節する方法

Info

Publication number
JPH09198865A
JPH09198865A JP8176305A JP17630596A JPH09198865A JP H09198865 A JPH09198865 A JP H09198865A JP 8176305 A JP8176305 A JP 8176305A JP 17630596 A JP17630596 A JP 17630596A JP H09198865 A JPH09198865 A JP H09198865A
Authority
JP
Japan
Prior art keywords
transistor
power supply
circuit
supply voltage
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8176305A
Other languages
English (en)
Japanese (ja)
Inventor
Takesada Akiba
武定 秋葉
Hiroshi Otori
浩 大鳥
Goro Kitsukawa
五郎 橘川
Masayuki Nakamura
正行 中村
Hideo Sunami
英夫 角南
E Hyslop Adin
エイディン・イー・ヒスロップ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Texas Instruments Inc
Original Assignee
Hitachi Ltd
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Texas Instruments Inc filed Critical Hitachi Ltd
Publication of JPH09198865A publication Critical patent/JPH09198865A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP8176305A 1996-01-16 1996-07-05 半導体メモリ、半導体集積回路装置、制御回路、論理回路、および論理回路の特性を調節する方法 Pending JPH09198865A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US939796P 1996-01-16 1996-01-16
US60/009,397 1996-01-16

Publications (1)

Publication Number Publication Date
JPH09198865A true JPH09198865A (ja) 1997-07-31

Family

ID=21737403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8176305A Pending JPH09198865A (ja) 1996-01-16 1996-07-05 半導体メモリ、半導体集積回路装置、制御回路、論理回路、および論理回路の特性を調節する方法

Country Status (4)

Country Link
US (1) US6028800A (enExample)
JP (1) JPH09198865A (enExample)
KR (1) KR970060209A (enExample)
TW (1) TW323400B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150050777A (ko) * 2013-10-31 2015-05-11 삼성전기주식회사 게이트 구동 회로, 스위치 장치 및 이를 갖는 전원 공급 장치

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272612B1 (ko) * 1998-08-18 2000-12-01 김영환 센스 앰프 드라이버 제어 방법
KR100743624B1 (ko) * 2004-12-29 2007-07-27 주식회사 하이닉스반도체 전력 소모를 줄인 반도체 장치
KR100940265B1 (ko) * 2007-10-31 2010-02-04 주식회사 하이닉스반도체 센스앰프 전원공급 회로

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920001325B1 (ko) * 1989-06-10 1992-02-10 삼성전자 주식회사 메모리 소자내의 센스 앰프 드라이버

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150050777A (ko) * 2013-10-31 2015-05-11 삼성전기주식회사 게이트 구동 회로, 스위치 장치 및 이를 갖는 전원 공급 장치

Also Published As

Publication number Publication date
TW323400B (enExample) 1997-12-21
KR970060209A (ko) 1997-08-12
US6028800A (en) 2000-02-22

Similar Documents

Publication Publication Date Title
US6384674B2 (en) Semiconductor device having hierarchical power supply line structure improved in operating speed
US6954103B2 (en) Semiconductor device having internal voltage generated stably
US6545923B2 (en) Negatively biased word line scheme for a semiconductor memory device
US6058063A (en) Integrated circuit memory devices having reduced power consumption requirements during standby mode operation
US5659517A (en) Semiconductor memory device with an improved hierarchical power supply line configuration
US6188628B1 (en) Semiconductor storage device
US5757702A (en) Data holding circuit
US6313694B1 (en) Internal power voltage generating circuit having a single drive transistor for stand-by and active modes
US7372764B2 (en) Logic device with reduced leakage current
US20040109344A1 (en) Semiconductor memory device
US6826108B2 (en) Integrated circuit memory device power supply circuits and methods of operating same
US5936896A (en) High speed and low power signal line driver and semiconductor memory device using the same
KR100574181B1 (ko) 고속기입회복을갖춘메모리장치및그에관련된기입회복방법
US5914898A (en) Memory device and system with leakage blocking circuitry
US6292413B1 (en) Semiconductor device, semiconductor memory device and semiconductor integrated circuit device
JP2009129537A (ja) メモリ装置並びに当該メモリ装置の動作方法
US6704237B2 (en) Circuits for controlling internal power supply voltages provided to memory arrays based on requested operations and methods of operating
US20020006069A1 (en) Semiconductor memory device with reduced standby current
US5875145A (en) Semiconductor memory device having a voltage lowering circuit of which supplying capability increases when column system is in operation
US6275439B1 (en) Power supply control apparatus for changing power line connection type in response to operation mode in semiconductor memory device
JPH09198865A (ja) 半導体メモリ、半導体集積回路装置、制御回路、論理回路、および論理回路の特性を調節する方法
US9001610B2 (en) Semiconductor device generating internal voltage
US5771198A (en) Source voltage generating circuit in semiconductor memory
US6934204B2 (en) Semiconductor device with reduced terminal input capacitance
US5534797A (en) Compact and fast row driver/decoder for semiconductor memory