經濟部中央標準局負工消費合作社印製 322615 A7 _B7___五、發明説明（1 ) 發明領域 本發明係關於用於半導體製程中的、興_厦測量裝置，特 別是關於能加以防止存在於欲測試晶圓表面之例如蝕刻氣 體之雜質氣體所引起基準晶片之污染，以提高所測出數據 之可靠度，並顯著地縮短洗淨基準晶片所需時間之用於半 導體製程中的膜厚測量裝置。 按在半導體裝置程中，正確測量塗布在晶圓表面上之 膜厚乃是爲了完成穩定製程所必須的作業。 曾有人揭露各種以光學方式測量膜厚之技術，其中最 正確且從收集數據及分析之層面來看，最迅速之方法就是 CARIS(定速反射干擾光譜學，constant angle reflection interference spectroscopy)技術 » 此種CARIS技術，則在試樣表面照射由白色光源 Y (white light source)所產生之光束，而測量其波長範 圍爲400~800nm之反射光強度以算出膜厚》 茲以在晶圓表面以所定厚度塗布單一層膜者作爲試樣 而測其厚度之場合，以爲對根據上述CARIS技術的測量 膜厚之一例說明如下》 首先，當對試樣照射由白色光產生之光束時，自膜表 面反射之光與由膜和晶圓間之界面反射之光，將結合而產 生相長性干擾（constructive interferance)和相消性 干擾（d e s t r u c t i v e interferance) ° 因爲此種干擾現象所形成波長的反射光強度曲線，亦 即，可由此求得光譜響應曲線（spectral response (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 销 * - I— i In «^1 · 本紙張尺度適用中國國家搮準（CNS ) A4規格（210X297公釐） A7 _ B7_ 五、發明説明（2 ) curve)中的最大値和最小値，此時，膜厚愈厚，則最大 値與最小値之差異愈更大。 應用如上所述CARIS技術之晶圓膜厚測量裝置（1)， 如圖1所示，係由具有所定大小之大致呈六面體形狀所 成，而具備：上面設有各種控制儀器等之本體（10);設 置在該本體（10)上面之預定位置而用於擺放欲測晶圓之 晶圓擺片台（wafer stage, 3);設置在靠近該晶圓擺片 台（3)邊緣外側之位置而用於提供測量膜厚用基準數據之 基準晶片（reference chip，2);以及以設置在上述本體 (10)上面預定位置之狀態下，收集由裝置運作所輸出之 各種數據而加以分析之電腦（4) » 茲就使用這樣的膜厚測量裝置（1 )來測試塗布在晶圓 表面的薄膜厚度之過程說明如下。 首先，在基準晶片（2 )上照射由如鹵素燈等白色光源 所發出之光束，並測量自該基準晶片（2 )所反射光束之光 譜響應。此時，基準晶片（2)會顯示基線光譜（baseline spectrum) ° 經濟部中央榡準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 如此，經測量對基準晶片（2 1 )之光譜響應後，測量 對照射在塗布在晶圓表面之光束所反射過來之光束的光譜 響應，而使由晶圓薄膜所反射光束之光譜響應與該基準晶 片（2)之光譜響應一起予以正規化。 繼後，計算自該晶圓表面之薄膜所反射光束之相對性 強度（即，相對性反射強度），藉此以運算膜厚。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 322615 A7 B7 —-—~ 1— ~—— 五、發明説明（3 ) 然以利用此種c AR I S技術之膜厚測量裝置來測量經 實施蝕刻過程之晶圓上之膜厚時，由於基準晶片（2)因爲 受到存在於晶圓的蝕刻氣體（例如，溴）等雜質氣體之污染 而無法獲得正確的初期基準晶片之光譜響應，所以所測得 數據之正確度及信賴度低，結果，使得晶圓之薄膜厚度測 量作業趨於不正讀，這是個嚴重的問題。 另一方面，爲去除此種基準晶片（2)之污染，以往係 採取將設置在本體（10)上面之基準晶片（2)隨時予以分離 (一天好幾次）而加以洗淨之方式。 然此種利用洗淨基準晶圓方式之預防保養 (preventive maintenance)作業則每天平均須做約三 次，每次約需1小時，故每個月（3 0日）則約需9 0小時，不 必多說，不但顯著降低作業性及生產性，亦會導致製程不 穩定之問題。 發明欲解決之問題 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注Ϊ項再填寫本頁} 本發明之目的即在針對上述以往之缺點，提供一種於 測量自蝕刻過程所移送之晶圓上的薄膜厚度之際，爲防止 基準晶片受到雜質氣體所污染而構成爲能加以以、 存在於晶圓表面之蝕刻氣體等雜質氣體，以保障所測得數 據之信賴性及正確性，同時，可顯著提高作業性及生產性 之用於半導體製程中的膜厚測量裝置》 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0父297公釐） A7 B7 五、發明説明（4 ) 解決問題之方法 爲達成上述目的，本發明係在：具備設置有各種控制 儀器之本體，設置在該本體上面靠近晶圓擺片台邊緣部分 外側之所定位置而用於提供測量膜厚所需基準數據之基準 晶片，以及以設在該本體上預定位置之狀態下收集因運作 裝置所輸出之各種數據而加以分析之計算機而成之用於半 導體製程中的膜厚測量裝置中，具備設置在上述擺片台之 邊緣部分而用於一面去除存在於由蝕刻過程移送過來之晶 圓表面之蝕刻氣體等雜質氣體，一面防止基準晶片受到污 染之污染防止裝置爲其特徵者。 依照如上述本發明之污染防止裝置，其特徵爲由：一 排出裝置，其入口部係位於該晶圓擺片台之邊緣部分上方 朝向該擺片台方向而配置，出口部係朝向本體外而設置； 以及一吸入裝置，以設置在該排出裝置之入口部內側之狀 態下一面朝向依電流所允許而定之方向旋轉一面令存在於 晶圓表面之雜質氣體朝向排出裝置出口部方向強制送風所 構成。， 茲將本發明之實施例根據所附圖面詳細說明如下。 經濟部中央標準局員工消費合作社印製 —.— —II /' 裝-- (請先聞讀背面之注意事項再填寫本貫} 本發明之實施例中，與圖1所圖示向前技術之構成要 件相同的構成要件係附以同一符號。 參照圖2，本發明係一種用於半導體製造中的膜厚測 量裝置，其係具備··一本體（10)，設有各種控制儀器； 一晶圓擺片台（3)，設置在該本體（10)上面之預定位置； 一基準晶片（2)，設置在靠近該晶圓擺片台（3)邊緣外側 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 經濟部中央標隼局員工消費合作社印製 A7 B7 五、發明説明（5 ) 之位置而用於提供測量膜厚用基準數據；以及一電腦 (4)，以設置在上述本體（10)上面之預定位置之狀態下， 收集由裝置運作所輸出之各種數據而加以分析；其特徵爲 設有：用於去除由鈾刻過程移送過來而擺放在該晶圓擺片 台（3)上的晶圓表面所存在之蝕刻氣體，藉以防止基準晶 片（2)受到污染之污染防止裝置（20)。 在本發明之實施例中，上述污染防止裝置（20)，如 圖2及圖3所示，係具有由：入口部（32)係位於上述晶圓 擺片台（3 )之Μ上方且朝向該晶圓擺片台（3)方向而配 置，出口部（3 4)係朝向本體（10)外側而設置之排出裝置 (30)，以及以設在該排出裝置（30)入口部（32)內側之狀 態下朝向依電流所允許之方向一面旋轉一面將存在於該晶 圓擺片台（3 )上之雜I氣體朝向排出裝置（3〇)出口部（34) 方向予以強過多風之置Α裝置（4 〇 .)所形直玄構瑋。 這樣的本發明之排出裝置（3 0 )爲具有預定大小內徑 之排氣管（36)，而上述吸入裝置（40)係由設置在該排氣 管（36)入口部（32)側之吸入風車（42)所構成。 此外，在本發明中，構成上述吸入裝置（40)之吸入 風車（42)係構成爲當晶圓一擺放在晶圓擺放台（3)上即可 同時自動開動，或構成爲作業者以肉眼觀察到晶圓已擺放 在晶圓擺放台（3)上後再以操作另外設置之開關來啓動之 方式。 茲就如此實施之本發明之運作情形說明如次。 本紙張尺度逋用中國國家標準（CNS ) A4規格（2!0X297公釐） -- (请先閲讀背面之注$項再填寫本頁) 訂 A7 B7 經濟部中央標準局員工消費合作社印製 玉、發明説明（6 ) 如圖3所示，如欲測量塗布在經完成蝕刻過程的晶圓 表面之薄膜厚度時，當藉由另外之驅動裝置將該已完成蝕 刻過程之晶圓擺放在根據本發明之膜厚測量裝置之晶圓擺 片台（3)上時，構成上述污染防止裝置（20)的吸入裝置 (40)之吸入風車（42)會自動或藉作業者之開關操作而依 π預定方向及預定時間邊旋轉邊將該晶圓擺片台（3)周圍空 /氣吸入於構成排出裝置（30)之排氣管（36)內側，隨之， 1存在於晶圓表面之溴等蝕刻氣體或其他雜質氣體亦被吸入 該排氣管（36)內側，並經由出口部（34)排出。 如此，按照預定時間驅動上述吸入風車（42)，即能 強制排出存在於晶圓表面上之蝕刻氣體等雜質氣體，經去 除後則依照預定程序測量對基準晶片（2)照射後所反射光 束之光譜響應値，亦予測量對該晶圓照射後所反射光束之 光譜響應値，並藉對這些響應値之比較運算即可獲致塗布 在該晶圓表面之薄膜厚度。 發明之效果 如上述，利用設有污染防止裝置之膜厚測量裝置來測 量塗布在晶圓表面之膜厚時，由於可防止存在於該晶圓表 面之蝕刻氣體所引起基準晶片之污染，所以可獲得更正確 之測量數據》 此外，由於每隔三天只實施一次程度之基準晶圓洗淨 作業（預防保養）就已足夠，所以每月（30日）僅需約10小 時程度之預防保養時間。此與習知相比，則可獲得每個月 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先聞讀背面之注f項再填寫本頁) 3226 5 A7 B7 五、發明説明（7 ) 減少8 0小時之預防保養時間，使得對提高顯著的作業性 及生產性與製程之安定化有莫大的效果。 圖面之簡單說明 圖1爲表示以往之膜厚測量裝置之槪略斜視圖》 圖2爲表示依照本發明之膜厚測量裝置斜視圖。 圖3爲圖2之晶圓擺片台附近之擴大斜視圖。 符號之說明 I :膜厚測量裝置 3 :晶圓片台 3 0 :排出裝置 2 :基準晶片 2〇 :污染防止裝置 4〇 :吸入裝置 裝. 訂 (請先Η讀背面之注$項再填寫本頁) 經濟部中央標率局員工消費合作；： ίΐ中國國家標準（CNS ) A4規格（210X297公釐）Printed 322615 A7 _B7___ by the Ministry of Economic Affairs Central Bureau of Standards Consumer Cooperatives V. Description of the invention (1) Field of the invention The present invention relates to the Xing_xia measuring device used in the semiconductor manufacturing process, in particular to prevent it from being A film thickness measuring device used in semiconductor manufacturing processes to test the surface of the wafer for contamination of the reference wafer caused by impurity gases such as etching gases to improve the reliability of the measured data and significantly shorten the time required to clean the reference wafer . According to the semiconductor device process, the correct measurement of the thickness of the film coated on the wafer surface is necessary to complete the stable process. Someone once revealed various techniques for measuring film thickness optically. Among them, the most accurate and from the perspective of data collection and analysis, the fastest method is the CARIS (constant angle reflection interference spectroscopy, constant angle reflection interference spectroscopy) technology »This This kind of CARIS technology irradiates the surface of the sample with the light beam generated by the white light source Y (white light source), and measures the reflected light intensity in the wavelength range of 400-800 nm to calculate the film thickness. When the thickness of a single-layer film is used as a sample to measure its thickness, the following is an example of the measurement of the film thickness according to the above-mentioned CARIS technology. First, when the sample is irradiated with a beam of white light, it is reflected from the surface of the film The light and the light reflected by the interface between the film and the wafer will combine to produce constructive interferance and destructive interferance ° The reflected light intensity curve of the wavelength formed by this interference phenomenon , That is, the spectral response curve (spectral response (please read the note on the back Please fill in this page if you need to.) Packing · Ordering *-I— i In «^ 1 · This paper size applies to China National Standard (CNS) A4 specification (210X297mm) A7 _ B7_ V. Description of invention (2) curve ) In the maximum and minimum values in), at this time, the thicker the film thickness, the greater the difference between the maximum and minimum values. The wafer film thickness measuring device (1) using the CARIS technology as described above, as shown in FIG. 1, is formed of a roughly hexahedral shape with a predetermined size, and is provided with: a body provided with various control instruments on it (10); Wafer stage (3) placed at a predetermined position above the body (10) for placing the wafer to be tested; placed near the edge of the wafer stage (3) A reference chip (reference chip, 2) used to provide reference data for measuring the film thickness at the outer position; and in a state where it is provided at a predetermined position above the body (10), various data output by the operation of the device are collected The analysis computer (4) »The process of testing the thickness of the film coated on the surface of the wafer using this film thickness measuring device (1) is explained below. First, the reference wafer (2) is irradiated with a light beam emitted by a white light source such as a halogen lamp, and the spectral response of the reflected beam from the reference wafer (2) is measured. At this time, the reference chip (2) will display the baseline spectrum (baseline spectrum) ° Printed by the Employees Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economic Affairs (please read the precautions on the back and then fill out this page). 1) After the spectral response, measure the spectral response to the beam reflected by the beam irradiated on the surface of the wafer, so that the spectral response of the beam reflected by the wafer film and the spectral response of the reference wafer (2) Be formalized. Subsequently, the relative intensity of the light beam reflected from the thin film on the surface of the wafer (that is, the relative reflection intensity) is calculated to calculate the film thickness. This paper scale applies the Chinese National Standard (CNS) A4 specification (210X297mm) 322615 A7 B7 —-— ~ 1— ~ —— V. Description of the invention (3) The film thickness measuring device using this c AR IS technology To measure the film thickness on the wafer that has undergone the etching process, the reference wafer (2) is not contaminated by impurity gases such as etching gas (eg, bromine) present on the wafer, so the correct initial reference wafer spectrum cannot be obtained In response, the accuracy and reliability of the measured data are low. As a result, the thin film thickness measurement operation of the wafer tends to be unread, which is a serious problem. On the other hand, in order to remove the contamination of the reference wafer (2), in the past, the reference wafer (2) provided on the body (10) was separated at any time (several times a day) and washed. However, this type of preventive maintenance using the cleaning standard wafer method needs to be done about three times a day on average, each time takes about 1 hour, so each month (30 days) requires about 90 hours, no need More to say, not only significantly reduces the workability and productivity, but also leads to the problem of unstable process. Problems to be solved by the invention Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the note Ϊ on the back and then fill out this page) In order to prevent the reference wafer from being contaminated by impurity gas, the thickness of the thin film on the wafer is constituted by impurity gas such as etching gas that exists on the surface of the wafer to ensure the reliability and accuracy of the measured data At the same time, it can significantly improve the workability and productivity of the film thickness measurement device used in the semiconductor manufacturing process. "This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0 father 297 mm) A7 B7 5. Description of the invention (4) Method to solve the problem To achieve the above object, the present invention is provided with: a body provided with various control instruments, which is provided on the body at a predetermined position near the outer side of the edge of the wafer swing table to provide the measurement of the film thickness Reference chip for required reference data, and various data output by the operating device are collected in a state of being set at a predetermined position on the body The film thickness measuring device used in the semiconductor manufacturing process, which is analyzed by a computer, is provided at the edge of the swing table to remove the etching gas existing on the surface of the wafer transferred by the etching process. Impurity gas is a characteristic of a pollution prevention device that prevents the reference wafer from being contaminated. The pollution prevention device according to the present invention described above is characterized by an exhaust device whose entrance is located at the edge of the wafer swing table Part of the upper part is arranged in the direction of the pendulum table, and the outlet part is arranged outside the body; and an inhalation device, which is arranged inside the inlet part of the discharge device, rotates in a direction facing the direction allowed by the current The impurity gas existing on the surface of the wafer is constituted by forced air blowing toward the outlet of the discharge device. The embodiments of the present invention are described in detail below based on the attached drawings. Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. II / 'outfit-(please read the precautions on the back before filling in the text) In the embodiment of the present invention The same constituent elements as those of the forward technology shown in FIG. 1 are affixed with the same symbol. Referring to FIG. 2, the present invention is a film thickness measuring device used in semiconductor manufacturing, which is provided with a main body (10 ), Equipped with various control instruments; a wafer swing table (3), set at a predetermined position above the body (10); a reference wafer (2), placed near the edge of the wafer swing table (3) The outside paper size is applicable to China National Standard (CNS) A4 (210X297mm). The A7 B7 is printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs. 5. The position of the invention description (5) is used to provide a reference for measuring the film thickness. Data; and a computer (4), which is set in a predetermined position above the body (10), collects and analyzes various data output by the operation of the device, and is characterized by being provided with: The process transfers the etching gas existing on the surface of the wafer placed on the wafer table (3) to prevent the reference wafer (2) from being contaminated by the pollution prevention device (20). In an embodiment of the present invention, the pollution prevention device (20), as shown in FIGS. 2 and 3, has an inlet portion (32) located above and facing the M of the wafer swing table (3) The wafer swing table (3) is arranged in the direction, and the outlet part (34) is an ejection device (30) provided toward the outside of the body (10), and is provided at the inlet part (32) of the ejection device (30) In the state of the inner side, the direction of the current is allowed to rotate and the stray I gas existing on the wafer swing table (3) is forced toward the outlet of the exhaust device (3) and the excessive wind is placed. Α device (4 〇.) Shaped straight Xuan Gou Wei. Such a discharge device (30) of the present invention is an exhaust pipe (36) having an inner diameter of a predetermined size, and the above-mentioned suction device (40) is provided by an inlet portion (32) side of the exhaust pipe (36) Intake windmill (42). In addition, in the present invention, the suction windmill (42) constituting the above-mentioned suction device (40) is configured to be automatically started at the same time when the wafer is placed on the wafer placement table (3), or is configured as an operator After visually observing that the wafer has been placed on the wafer placement table (3), it can be activated by operating a switch provided separately. The following describes the operation of the invention thus implemented. This paper uses the Chinese National Standard (CNS) A4 specification (2! 0X297mm)-(please read the $ item on the back and then fill in this page) Order A7 B7 Jade printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 3. Description of the invention (6) As shown in FIG. 3, if you want to measure the thickness of the thin film coated on the surface of the wafer after the etching process is completed, when the wafer with the etching process completed is placed on the basis of another drive device When the wafer swing table (3) of the film thickness measuring device of the present invention, the suction windmill (42) of the suction device (40) constituting the pollution prevention device (20) is automatically or by operating the operator's switch π In a predetermined direction and a predetermined time, the air / air around the wafer swing table (3) is sucked into the exhaust pipe (36) constituting the discharge device (30) while rotating, and then, 1 exists on the surface of the wafer Etching gas such as bromine or other impurity gas is also drawn into the inside of the exhaust pipe (36) and discharged through the outlet portion (34). In this way, the above-mentioned suction windmill (42) is driven at a predetermined time, so that the impurity gas such as etching gas present on the surface of the wafer can be forcibly discharged, and after removal, the reflected beam of the reflected beam after irradiating the reference wafer (2) according to a predetermined procedure The spectral response value is also measured as the spectral response value of the reflected beam after the wafer is irradiated, and the thickness of the film coated on the surface of the wafer can be obtained by comparing the response values. Effect of the Invention As described above, when a film thickness measuring device provided with a pollution prevention device is used to measure the film thickness coated on the surface of the wafer, the reference wafer can be prevented from being contaminated by the etching gas existing on the surface of the wafer, so that Obtaining more accurate measurement data "In addition, since it is sufficient to carry out the standard wafer cleaning operation (preventive maintenance) only once every three days, only about 10 hours of preventive maintenance time per month (30 days) . Compared with the conventional knowledge, you can get the Chinese paper standard (CNS) A4 standard (210X297mm) for each month of the paper standard (please read the note f on the back and then fill in this page) 3226 5 A7 B7 5 Description of the invention (7) Reduce the preventive maintenance time of 80 hours, which has a great effect on improving the remarkable workability and productivity and the stabilization of the process. Brief Description of the Drawings FIG. 1 is a schematic perspective view showing a conventional film thickness measuring device. FIG. 2 is a perspective view showing a film thickness measuring device according to the present invention. FIG. 3 is an enlarged perspective view near the wafer swing table of FIG. 2. DESCRIPTION OF SYMBOLS I: Film thickness measuring device 3: Wafer stage 3 0: Discharge device 2: Reference wafer 2〇: Pollution prevention device 4〇: Inhalation device installation. Order (please read the note item on the back first and fill in This page) Employee consumption cooperation of the Central Standardization Bureau of the Ministry of Economic Affairs ;: China National Standard (CNS) A4 specification (210X297 mm)