TW313700B - - Google Patents
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- Publication number
- TW313700B TW313700B TW085102195A TW85102195A TW313700B TW 313700 B TW313700 B TW 313700B TW 085102195 A TW085102195 A TW 085102195A TW 85102195 A TW85102195 A TW 85102195A TW 313700 B TW313700 B TW 313700B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- contact
- conductive member
- active area
- interlayer insulating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7048063A JPH08250600A (ja) | 1995-03-08 | 1995-03-08 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW313700B true TW313700B (https=) | 1997-08-21 |
Family
ID=12792902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085102195A TW313700B (https=) | 1995-03-08 | 1996-02-26 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5677249A (https=) |
| JP (1) | JPH08250600A (https=) |
| KR (1) | KR100197193B1 (https=) |
| TW (1) | TW313700B (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121663A (en) | 1997-05-22 | 2000-09-19 | Advanced Micro Devices, Inc. | Local interconnects for improved alignment tolerance and size reduction |
| US5956610A (en) * | 1997-05-22 | 1999-09-21 | Advanced Micro Devices, Inc. | Method and system for providing electrical insulation for local interconnect in a logic circuit |
| US6413803B1 (en) * | 1999-10-25 | 2002-07-02 | Taiwan Semiconductor Manufacturing Company | Design and process for a dual gate structure |
| WO2001071807A1 (en) * | 2000-03-24 | 2001-09-27 | Fujitsu Limited | Semiconductor device and method of manufacture thereof |
| CN100394605C (zh) * | 2001-01-30 | 2008-06-11 | 株式会社日立制作所 | 半导体集成电路器件及其制造方法 |
| JP5519724B2 (ja) * | 2001-07-17 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4173672B2 (ja) * | 2002-03-19 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JP2006339343A (ja) * | 2005-06-01 | 2006-12-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| CN102870207A (zh) * | 2010-10-26 | 2013-01-09 | 松下电器产业株式会社 | 半导体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4619038A (en) * | 1985-08-15 | 1986-10-28 | Motorola, Inc. | Selective titanium silicide formation |
| JP2689031B2 (ja) * | 1991-04-01 | 1997-12-10 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| KR960006693B1 (ko) * | 1992-11-24 | 1996-05-22 | 현대전자산업주식회사 | 고집적 반도체 접속장치 및 그 제조방법 |
-
1995
- 1995-03-08 JP JP7048063A patent/JPH08250600A/ja active Pending
-
1996
- 1996-02-26 TW TW085102195A patent/TW313700B/zh active
- 1996-03-05 KR KR1019960005726A patent/KR100197193B1/ko not_active Expired - Fee Related
- 1996-06-26 US US08/670,927 patent/US5677249A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5677249A (en) | 1997-10-14 |
| JPH08250600A (ja) | 1996-09-27 |
| KR960036096A (ko) | 1996-10-28 |
| KR100197193B1 (ko) | 1999-07-01 |
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