TW301037B - - Google Patents

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Publication number
TW301037B
TW301037B TW083110407A TW83110407A TW301037B TW 301037 B TW301037 B TW 301037B TW 083110407 A TW083110407 A TW 083110407A TW 83110407 A TW83110407 A TW 83110407A TW 301037 B TW301037 B TW 301037B
Authority
TW
Taiwan
Prior art keywords
photoresist
unit
light
exposure
cooling
Prior art date
Application number
TW083110407A
Other languages
English (en)
Chinese (zh)
Original Assignee
Sony Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5290495A external-priority patent/JPH07142356A/ja
Priority claimed from JP5290494A external-priority patent/JP2829909B2/ja
Application filed by Sony Co Ltd filed Critical Sony Co Ltd
Application granted granted Critical
Publication of TW301037B publication Critical patent/TW301037B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW083110407A 1993-11-19 1994-11-10 TW301037B (ref)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5290495A JPH07142356A (ja) 1993-11-19 1993-11-19 レジスト・パターン形成方法およびこれに用いるレジスト・パターン形成システム
JP5290494A JP2829909B2 (ja) 1993-11-19 1993-11-19 レジスト処理方法及びレジスト処理装置

Publications (1)

Publication Number Publication Date
TW301037B true TW301037B (ref) 1997-03-21

Family

ID=26558084

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110407A TW301037B (ref) 1993-11-19 1994-11-10

Country Status (3)

Country Link
US (1) US6022672A (ref)
KR (1) KR100274081B1 (ref)
TW (1) TW301037B (ref)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE418750T1 (de) * 1998-07-08 2009-01-15 Nitto Denko Corp Verfahren zum entschichten von resistmaterial
JP3416078B2 (ja) * 1999-06-09 2003-06-16 東京エレクトロン株式会社 基板処理装置
TW511169B (en) 2000-02-01 2002-11-21 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP3648129B2 (ja) * 2000-05-10 2005-05-18 東京エレクトロン株式会社 塗布現像処理方法及び塗布現像処理システム
US6420098B1 (en) * 2000-07-12 2002-07-16 Motorola, Inc. Method and system for manufacturing semiconductor devices on a wafer
JP4150493B2 (ja) * 2000-08-22 2008-09-17 株式会社東芝 パターン描画装置における温度測定方法
JP2002134395A (ja) * 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体装置の製造システム
TWI245774B (en) * 2001-03-01 2005-12-21 Shinetsu Chemical Co Silicon-containing polymer, resist composition and patterning process
US6809928B2 (en) * 2002-12-27 2004-10-26 Intel Corporation Sealed and pressurized liquid cooling system for microprocessor
JP2004342654A (ja) * 2003-05-13 2004-12-02 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4202962B2 (ja) * 2004-04-27 2008-12-24 株式会社東芝 基板処理方法及び半導体装置の製造方法
JP4393976B2 (ja) 2004-12-06 2010-01-06 大日本スクリーン製造株式会社 基板処理装置
US8636458B2 (en) * 2007-06-06 2014-01-28 Asml Netherlands B.V. Integrated post-exposure bake track
JP5148944B2 (ja) * 2007-08-14 2013-02-20 大日本スクリーン製造株式会社 基板処理システム
US20090142694A1 (en) * 2007-11-30 2009-06-04 Braggone Oy Siloxane polymer compositions and methods of using the same
JP7112220B2 (ja) * 2017-05-12 2022-08-03 キヤノン株式会社 方法、装置、システム、および物品の製造方法
US10345718B2 (en) * 2017-05-17 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern forming method and apparatus for lithography

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR860002082B1 (ko) * 1983-01-19 1986-11-24 가부시기가이샤 도시바 레지스트 패턴의 형성 방법 및 장치
JPS60157225A (ja) * 1984-01-27 1985-08-17 Toshiba Corp レジストパタ−ン形成方法
JPS61156814A (ja) * 1984-12-28 1986-07-16 Toshiba Corp レジストベ−キング方法およびレジストベ−キング装置
JPS6218028A (ja) * 1985-07-16 1987-01-27 Toshiba Corp デイスカム装置
JPS62129846A (ja) * 1985-12-02 1987-06-12 Dainippon Screen Mfg Co Ltd フオトレジストの塗布方法及び塗布装置
JPS6459915A (en) * 1987-08-31 1989-03-07 Sigma Gijutsu Kogyo Heat treatment device for resist coated substrate
KR970003907B1 (ko) * 1988-02-12 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 기판처리 장치 및 기판처리 방법
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置

Also Published As

Publication number Publication date
KR100274081B1 (ko) 2000-12-15
US6022672A (en) 2000-02-08
KR950015554A (ko) 1995-06-17

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MM4A Annulment or lapse of patent due to non-payment of fees